Bi系超导体高Tc相的形成机制

本文研究Bi系超导体高T_c(2223)相的形成机制。提出Bi系氧化物超导体高T_c相的形成过程是:首先Sr-Ca-Cu氧化物(Ca_0.85Sr_0.15CuO₂)与低T_c(2212)相反应形成高T_c相的核,然后样品内2223相核通过象结晶学中晶体生长那样的方式长大成2223相晶粒。2223相成核过程中Sr-Ca-Cu氧化物的形成途径有两条:一条是通过固相反应 关键词：     

不同氧含量Bi2Sr2CaCu2O８+δ单晶电阻率的各向异性

精确测量了在不同氧压下退火的单晶Bi₂Sr₂CaCu₂O_8+δ(Bi2212)样品的Cu-O面内和Cu-O面外的电阻率ρ_c(T)和ρ_ab(T).发现ρ_c(T)和各向异性比(ρ_c(T)/ρ_ab(T))随着载流子浓度增加而迅速下降.在过掺杂样品中,高于120K时,ρ_c随温度线性下降,而各向异性 关键词：     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶     

Zn掺杂对Bi2212单晶临界电流密度的影响

通过对少量Zn掺杂Bi2212单晶样品不同温度下的磁滞回线的测量,根据Bean临界态模型得到了样品在不同温度和磁场下的临界电流密度.发现不同温度下的临界电流密度与磁场的关系可以用Jc(H,T)=Jc(0,T)exp(-Hα)进行拟合,并且拟合参量α随温度的上升而增大,而在Pb掺杂和纯Bi2212单晶中α值基本上是不随温度变化的.将得到的Jc与Pb掺杂和纯Bi2212单晶的结果进行比较,发现在相同的温度和磁场下Zn掺杂样品具有最高的临界电流密度,表明少量Zn掺杂使得样品的临界电流密度得到提高.Zn掺杂对Bi2212体系临界电流密度的提高主要来源于在材料中引入了有效的涡旋钉扎中心,而Pb掺杂体系中Jc的提高是体系的层间耦合增强导致的结果.     

在氧-水蒸气存在下单相Sr2(Gd,Ce)2Cu2RuO10的合成及其电学性质

传统固相反应所合成的锶系钌铜氧化物，通常总伴有少量铁磁性SrRuO₃杂相.采 用氧(或空 气)_水蒸气混合气氛下的新型固相反应，既能成功合成锶系钌铜氧化物的前驱物纯相Sr₂G dRuO₆(211相), 也能进一步在相对低的温度下成功合成锶系钌铜氧1222纯相化 合物RuSr₂(Gd,Ce)₂Cu₂O₁₀ (Ru_1222）， 使其中SrRuO _{关键词： 水蒸气参与的新型固相反应 2}(Gd')" href="#">RuSr₂(Gd 2Cu_{2< /sub>O10纯相')" href="#">Ce)2Cu2< /sub>O10纯相 3杂相')" href="#">SrRuO3杂相 电学性质}     

Bi系超导相形成的化学动力学研究

用化学动力学探讨了Bi系超导相形成的机理,提出反应活化能是控制超导相形成的关键因素。在纯Bi系2223名义成份下,2212相的形成满足“晶核形成生长”自催化动力学模型,其动力学方程为α_(2212)=1—exp(—k_(2212)t~(2.5))。2223相的形成较好地符合“收缩晶核界面”反应模型,动力学方程为1—(1—α_(2223))~(1/3)=k_(2223)t。以0.35molPb替代Bi后,2212相形成的动力学规律没有本质改变,但是2223相的形成表现出区域反应的自催化效应,其相应的动力学方 关键词：     

Gd掺杂对Bi2Sr2Ca1-xGdxCu2Oy单晶载流子浓度和各向异性电阻率的影响

系统地研究了Gd掺杂对Bi2Sr2Ca1-xGdxCu2Oy单晶超导电性及各向异性电阻率的影响.Tc满足Tc/Tc,max=1-82.6(ax+b)2,并随Gd含量的增加而下降,这是由于Gd掺杂引起载流子浓度减小所导致.在x≥0.19时,ρab(T)在Tc附近有类半导体行为,dρab/dT随Gd含量增大而增大.ρc(T)呈半导体行为,并可用唯象公式ρc(T)=(a/T)exp(Δ/T)+bT+c加以描述.电阻率各向异性ρc/ρab随掺杂浓度增大而增大.     

大尺寸LnBa2Cu3O7-δ单晶的生长及其超导电性

本文报道大尺寸LnBa₂Cu₃O_7-δ(Ln=Y,Eu,Gd,Dy,Ho,Er,Tm,Yb,Lu)单晶生长及其超导电性,并讨论了(001)自然晶面的X射线多级衍射、劳厄相、旋进相等单晶鉴定法。 关键词：     

Bi-Sr-Ca-Cu-O2212相超导单晶的定向生长

用定向凝固法已成功地生长出Bi-Sr-Ca-O2212相的超导大单晶,最大的单晶尺寸达到19×3×2mm³。定向生长的单晶(001)面平行于生长方向,[100]方向为单晶的定向生长方向。劳厄像表明大晶体确为单晶,其质量比其它方法生长的单晶要高。氧气中退火后的单晶电阻测量和交流磁化率测量表明,零电阻温度T_c(0)=81.5k。 关键词：     

PbBi3低温合金薄膜的制备和超导性质

铋(Bi)和铅(Pb)都是重元素,有很强的自旋-轨道耦合作用,由于原子半径接近,可形成丰富的原子取代合金结构.尽管对高温合金相有了较深入的研究,但对其低温物相的结构和超导物性的认识还很不全面.本文采用低温共沉积和低温退火的方法,在Si(111)-(7×7)衬底上制备了一种基于Bi(110)单晶结构中部分Bi原子被Pb取代的铅铋合金低温相超薄膜新结构,利用扫描隧道显微术(STM)对其结构和电子学性质进行了表征.通过结构表征,确定了合金薄膜表面呈现2^1/2×2^1/2R45°重构的PbBi₃合金相,其母体Bi(110)结构中25%的Bi原子被Pb取代了.通过STM谱学测量,发现合金相PbBi₃为超导相.变温实验表明, PbBi₃相的超导转变温度为6.13 K.在外加垂直磁场下出现的磁通涡旋结构表明PbBi₃薄膜是第Ⅱ类超导体,估算出上临界磁场的下限为0.92 T.测量了由Bi(110)-PbBi₃组成的共面型和台阶型正常金属-超导体异质结中...     

Infrared absorption and far-infrared diffuse reflection spectra in Pb-doped Bi?Sr?Ca?Cu?O high-temperature superconductor

In this paper we study the room-temperature infrared transmission spectra (400–1600cm^–1) and far-infrared diffuse reflection spectra (50–450cm^–1) in Pb-doped Bi–Sr–Ca–Cu–O (2223) single phase (Tc=107k, sp1), multiphase (Tc=110k, sp2) and nonsuperconducting samples (sp3). The spectral features in superconductor are totally different from those in nonsuperconductor, which show the different crystal structure. The correlation existing between a factor group analysis of the phonons in (2223) and (2212) compounds affords a tentative assignment of ir-active modes in Pb-doped (2223) single phase by comparison with reported data in (2212) materials. The Cu–O stretching E_u vibration (605cm^–1) of CuO₂ layers is the characteristic vibrational mode related perovskitelike crystal structures. Two phonon coupling effect emerges in the infrared transmission spectra in Pb-doped superconductor. The Ca–O vibration A_2u (254cm^–1) might be related to superconductivity of Bi-based family.     

Comparative photoemission study of Bi2(Sr,Ca)3Cu2O8+y and Bi1.7Pb0.3Sr2Ca2Cu3O10+y

The electronic structure of Bi-based 2223 single phase superconductor has been studied by ultraviolet and X-ray photoemission. By comparison with that of 2212 phase superconductor, we find a higher density of states nearE _F for 2223 phase. From analysis of the Cu 2p core-level spectroscopy, we obtain a relatively smaller charge transfer energy between copper and oxygen as well as the Coulomb repulsion energy on Cu site for 2223 phase. We relate these changes to the increase of hole concentration from 2212 to 2223 phase. The experimental results support the viewpoint that the transition temperature should be correlated with the density of states atE _F .     

Thermodynamic parameters of Bi2Sr2CaCu2O8+δ thin film prepared by molecular beam epitaxy

Bi₂Sr₂CaCu₂O_8+δ (Bi2212) thin film is an important superconducting material ascribed to its high transition temperatures and low toxicity, but the application of Bi2212 thin films is limited due to the appearances of intergrowth and impurity phases. To achieve high-quality Bi2212 thin film by molecular beam epitaxy (MBE), the oxidizing gas pressure and substrate temperature are the key parameters. Here, the phase formation in Bi-based thin films grown by MBE was studied as a function of oxidizing gas pressure and substrate temperature. Furthermore, the thermodynamic parameters have been investigated through enthalpy change. This study indicates that the substrate temperature was increased with the enhancing of ozone partial pressure when the composition ratio is fixed, Bi2212 single phase can be formed. Moreover, the chemical stability decreases in the order of Bi₂Sr₂CuO_6+δ > Bi2212 > Bi₂Sr₂Ca₂Cu₃O_10+δ.     

A comparison of barrier type tunnel junction and point contact tunnel junction formed on the same highT c material

By making a combination of both point contact and barrier type tunnel junctions on a single sample of the highT _c superconductor BSCCO (2212) single crystal, we have shown that as the tunneling tip is slowly retracted from the surface a point contact junction gradually evolves from a N-S short to a high resistance tunnel junction. The scaled dynamic conductance (dI/dV) of this point contact tunnel junction becomes almost identical to that of a conventional barrier type tunnel junction and both show a linear dI/dV —V curve. The observation implies that at high resistance a point contact junction behaves in the same way as a barrier type tunnel junction. We suggested that the almost linear tunneling conductance obtained in both the cases most likely arises due to an intrinsic characteristic of the surface of the crystal comprising of a mosaic of superconducting regions of the order of a few nanometers. We also conclude that the barrierless (N-S) point contact obtained by piercing the surface oxide layer of the crystal shows Andreev reflection which we suggest as the origin of the zero bias anomaly often observed in point contact junctions.     

Equation of state and structural characterization of Cu4I4{PPh2(CH2CH = CH2)}4 under pressure

Combined high pressure single crystal X-ray diffraction experiments and ab initio simulations based on the density functional theory have been performed on a copper(I) iodide cluster formulated [Cu₄I₄{PPh₂(CH₂CH?=?CH₂)}₄] under high pressure up to 5?GPa. An exhaustive study of compressibility has been done by means of determination of isothermal equations of state and structural changes with pressure at 298?K taking advantage of the single crystal is more precise than powder X-ray diffraction for this type of experiments. It allows us to report the evidence of the existence of an isostructural phase transition of second order at 2.3?GPa not detected so far.     

Transitions de phase destructive et non destructive dans le cristal moleculaire bromo-2 naphtalene

The polymorphism of 2-bromonaphthalene has been studied by both crystallographic and energetical methods. Three crystalline forms have been characterized, respectively denoted Br_III, Br_II and Br_I. The first one is the stable form up to 319 K. At this temperature a first order phase transition occurs which breaks the single crystal and leads to a disordered structure Br_I isotypic with the naphthalene one. The Br_II form is a metastable one which appears when cooling the Br_I, form; when so formed, the Br_II phase can give again the Br_I one by annealing; so that the Br_I-Br_II transition is reversible. This second order transition extends over a large temperature range (275–319 K), it does not destroy the single crystal and corresponds to a substructural modification along the c axis of the monoclinic cell. The anomalies of the Cp curve and the variations of the principal components of the thermal expansion tensor suggest that there are two competitive temperature dependent molecular reorientations. The transition Br_II→Br_III which leads to the stable ordered form is spontaneous at room temperature, it takes place sluggishly and destroys the single crystal.Cell parameters of the Br_III form have been determined from powder data using an automatic indexing method: a = 9.578(1) Å, B = 9.601(1) Å, c = 10.303(1) Å, α = 100.79(1)°, β = 109.06(1)°, γ = 101.77(1)°. (Figure of merit M₂₀ = 86.)     

Theg-factor of the Iπ=5/2+ isomer in77Br

The g-factor of the t_1/2=9.3 ns, I_π=5/2 + state at E_x=130 keV in⁷⁷Br has been measured by observation of the time differential perturbed angular correlation (PAC) in a Co single crystal. The experimental value g=1.32(1) gives evidence for large deformation, which is discussed in the framework of triaxial-rotor-plus-particle models.     

Bi,Sn and Sb valence states in highT c (Bi,Pb/Sn,Sb)2Sr2Ca2Cu3Oy

The valence of Bi and its substituents Sn and Sb are investigated in the high temperature superconductor (Bi_0.8X_0.15Sb_0.05)₂Sr₂Ca₂Cu₃O_y (often denoted 2223) where X=Pb or Sn. Pb and Sn are isoelectronic with the valence states 2+ and 4+; Bi and Sb are as well with valence states 3+ and 5+. The valence state of Sn and Sb has been obtained from Mössbauer spectroscopy: they exist in the high charge states 4+ and 5+ respectively. Sn, Sb, and presumably Pb, take on the high valence state, and so furnish electrons to the conduction band. This is probably the reason why, although the (Pb, Sb)-doping aids in stabilizing the 2223 crystal structure, it is detremental to the electronic properties which lead to the superconducting phase. The valence state of Bi has been studied using X-ray photoelectron spectroscopy (XPS). These results show clearly that the Bi-based superconductor has a metal-like density of states at the Fermi level, and that the valence in the (Pb, Sb)-doped compounds is less than 3. This very surprising change in valence will have a profound effect on the superconducting properties, and is probably associated with the high valent states of Pb, Sn and Sb.