硅烯饱和吸附碱金属原子的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了硅烯饱和吸附碱金属元素原子的稳定性、微观几何结构和电子性质, 并与纯硅烯及其饱和氢化结构进行了对比分析. 研究发现复合物SiX(X=Li, Na, K, Rb)的形成能都是负的, 相对于纯硅烯来说可以稳定存在. Bader电荷分析表明, 电荷从碱金属原子转移至硅原子. 从成键方式来看, 硅烯与氢原子形成共价键, 而与碱金属原子之间形成的键主要是离子性成键, 但还存在部分共价关联成分. 能带计算表明, 锂原子饱和吸附在硅烯形成的复合物SiLi是直接带隙的半导体, 带隙大小为0.34 eV. 其他碱金属饱和吸附在硅烯上形成的复合物都表现为金属性.     

硅纳米团簇与石墨烯复合结构储锂性能的第一性原理研究

本文采用第一性原理计算方法, 研究了不同晶向硅纳米团簇与石墨烯复合结构稳定性及其储锂性能. 计算了不同高度、大小硅团簇与石墨烯复合结构的结合能, 复合结构中嵌锂吸附能和PDOS. 分析表明, 硅团簇和石墨烯之间形成较强的Si—C键, 其中[111]晶向硅团簇与石墨烯作用的形成能最高, 结构最为稳定. 进一步计算其嵌锂吸附能, 发现硅团簇中靠近石墨烯界面处的储锂位置更加有利于锂的吸附, 由于锂和碳、硅之间有较强电荷转移, 其吸附能明显大于其他储锂位置. 同时在锂嵌入过程中, 由于石墨烯的引入, 明显减小了界面处硅的形变, 有望提高其作为锂电池负极材料的可逆容量.     

单层硅烯表面的CoPc分子吸附研究

由于低维材料表面上的单原子和分子具有丰富的物理化学性质,现已经成为量子器件及催化科学等领域的研究热点.单层硅烯在不同的衬底制备温度下,表现出丰富的超结构,这些超结构为实现有序的单原子或分子吸附提供了可靠的模板.利用原位硅烯薄膜制备,分子沉积,超高真空扫描隧道显微镜以及扫描隧道谱,本文研究了Ag(111)衬底上3种硅烯超结构((4×4),(■×■),(2■×2■))的电子态结构,表面功函数随超结构的变化,以及CoPc分子在这3种超结构硅烯上的吸附行为.研究结果表明,这3种超结构的硅烯具有类似的电子能带结构,且存在电子从Ag(111)衬底转移到硅烯上的可能性,从而导致硅烯的表面功函数增大,表面功函数在原子级尺度上的变化对分子的选择性吸附起着重要作用.此外,还观察到分子与硅烯的相互作用导致CoPc分子的电子结构发生对称性破缺.     

各Li吸附组分下硅烯氢存储性能的第一性原理研究

利用Li原子对硅烯进行表面修饰是提高硅烯氢存储能力的一种有效方法.为了充分挖掘Li修饰硅烯的氢存储性能,本文采用范德瓦耳斯作用修正的第一性原理计算方法,对不同Li吸附组分下硅烯的结构、稳定性和氢存储能力进行了研究.研究结果表明,硅烯体系能够在Li组分从0.11增加到0.50时保持稳定,其最大储氢量随Li组分的增加而增大,氢气平均吸附能则存在减小趋势;当Li组分达到0.50而饱和时,硅烯体系具有最大的储氢量,相应的质量储氢密度为11.46 wt%,平均吸附能为0.34 eV/H2,远高于美国能源部设定的储氢标准,表明提高Li组分甚至使其达到饱和在理论上能有效提高Li修饰硅烯的储氢性能.此外,通过对Mulliken电荷布居、差分电荷密度和态密度的分析,发现Li修饰硅烯的储氢机制与电荷转移诱导的静电相互作用和轨道杂化作用有关.研究结果可为Li修饰硅烯在未来氢存储领域的应用提供理论指导.     

锑烯吸附金属Li原子的密度泛函研究

锑烯(antimonene)是继石墨烯和磷烯之后出现的新型二维材料,在锂离子电池等领域受到关注.本文基于第一性原理的密度泛函理论,计算研究了锑烯对Li原子的吸附特性,包括Li原子的最稳定吸附构型、吸附密度以及吸附Li原子的扩散路径.结果表明:Li原子最稳定的吸附位置位于谷位,即底层Sb原子之上、顶层三个Sb原子中心位置,吸附能为1.69 eV,吸附距离为2.81?;能带计算发现,锑烯为带隙宽度1.08 eV的间接带隙半导体,吸附Li原子后费米能级上升进入导带,呈现出金属性;原子分波态密度分析发现, Sb原子的p电子态和Li原子的p和s电子态形成明显的共振交叠,表现出杂化成键的特征;随着吸附Li原子数量增加,锑烯晶格结构和电子结构发生较大变化.通过微动弹性带方法计算发现, Li原子在锑烯表面的扩散势垒为0.07 eV,较小的势垒高度有利于快速充放电过程.     

二维Li+BC3结构高储氢容量的研究

本文基于第一性原理密度泛函理论, 证实了锂原子可以均匀地吸附在二维结构的BC₃片两侧, 同时被吸附的锂原子不会抱团. 通过计算表明, 被吸附的锂原子浓度达到33.3%时, Li+BC₃体系具有最高的储氢比例12.57 wt.%. 然后, 通过热力学分析预测了在室温 (300 K) 下, 115–250 atm之间, Li+BC₃体系可以达到上述储氢比例, 这不仅符合美国能源部的要求, 也满足了应用中的安全需要. 关键词： 第一性原理 储氢 3二维结构')" href="#">Li+BC₃二维结构     

掺杂对硅烯的性能影响

硅烯是单原子层的硅薄膜,具有类石墨烯结构.因此拥有与石墨烯相似的各种奇特的热学、化学、光学和电学性质.近年来,硅烯引起了研究者的广泛关注,作为一种新型的二维狄拉克电子材料,硅烯在理论计算和实验上都取得了不少新的进展.本文主要在前人对硅烯实施边缘钝化、掺杂、外加电场、加应力或者表面官能团修饰和吸附等研究的情况下,结合当前硅烯的研究发展趋势,重点研究了不同掺杂对硅烯性质的影响,并探讨硅烯在未来硅基电子器件的应用前景.     

电场作用下P掺杂硅烯选择性吸附CH_4的第一性原理计算

在煤层气中选择性吸附和捕捉甲烷分子,对提高煤矿安全具有十分重要的意义.本文采用第一性原理计算的方法,研究了外加电场作用下P掺杂硅烯对甲烷分子的选择性吸附性能.结果表明:正电场作用下,P掺杂硅烯与甲烷分子之间产生较强的化学吸附,能够快速捕获甲烷分子.当关闭外加电场时,P掺杂硅烯与甲烷分子之间则为微弱的物理吸附,甲烷分子很容易实现脱附.同时还发现,外加电场作用下,P掺杂硅烯与氮气、氧气及水之间的吸附均属于物理吸附,表明P掺杂硅烯可以在这些混合气体中实现甲烷气体的选择性吸附. P掺杂硅烯有望成为选择性好的甲烷传感、捕获新材料.     

铁原子吸附联苯烯单层电子结构的第一性原理

联苯烯单层由碳原子的四元、六元和八元环组成,具有与石墨烯相似的单原子层结构.2021年5月,Science首次报道了该材料的实验合成,引起了科研工作者的极大关注.基于第一性原理的密度泛函方法,研究了铁原子在联苯烯单层的吸附构型并分析了其电子结构.结构优化、吸附能和分子动力学的计算表明,联苯烯单层的四元环空位是铁原子最稳定的吸附位点,吸附能可达1.56 eV.电子态密度计算表明铁3d电子与碳的2p电子有较强的轨道杂化,同时电荷转移计算显示铁原子向近邻碳原子转移的电荷约为0.73个电子,说明联苯烯单层与吸附的铁原子之间形成了稳定的化学键.另外,铁原子吸附于联苯烯单层后体系显磁性,铁原子上局域磁矩大小约为1.81μB,方向指向面外.因此,本文确认了联苯烯单层是比石墨烯更好的铁原子吸附载体且体系有磁性,这为研究吸附材料的电磁、输运、催化等特性提供了新的平台.     

BeO高压相变和声子谱的第一性原理计算

采用第一性原理方法计算了BeO在零温时的高压相变和三种结构在零温零压时的声子谱.相变的计算表明,在122GPa左右的压力下BeO会发生从纤锌矿(B4)结构到氯化钠(B1)结构的相变,而闪锌矿(B3)结构在零温零压下是一种可能的亚稳态结构.采用冷声子方法计算了这三种结构的BeO在零温零压下的声子谱.计算结果表明:B1结构在零温零压下是一种不稳定的结构;尽管B4结构和B3结构具有明显的相似性,仍然可以通过声子谱来很好的区分.最后根据准简谐近似理论计算得到了BeO的高温高压相图.     

Superconductivity in electron-doped arsenene

Based on the first-principles density functional theory electronic structure calculation,we investigate the possible phonon-mediated superconductivity in arsenene,a two-dimensional buckled arsenic atomic sheet,under electron doping.We find that the strong superconducting pairing interaction results mainly from the pz-like electrons of arsenic atoms and the A1 phonon mode around the K point,and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12%-applied biaxial tensile strain.This transition temperature is about ten times higher than that in the bulk arsenic under high pressure.It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors,including graphene,silicene,phosphorene,and borophene.     

单轴应变对氮化铟电子结构及光学性质的影响

采用密度泛函理论框架下的第一性原理平面波赝势方法,计算单轴应变下闪锌矿氮化铟的电子结构及光学性质.结果表明：施加应变会使带隙变窄.对于拉应变,随着应变增大带隙减小程度增大;对于压应变,随应变增大带隙减小程度减弱;且拉、压应变对带隙调控都是线性的.在能量区间4 eV~12 eV范围内施加应变时,氮化铟的吸收光谱发生红移,随拉应变程度增加,吸收光谱的红移进一步加大;随压应变增加,吸收光谱红移减弱;在该范围内,氮化铟的折射率、反射率随拉应变的增大而增加,随压应变增加减小;施加拉应变时能量损失函数峰值增大,施加压应变后能量损失函数峰值减小.通过施加单轴应变能有效调节氮化铟材料的电结构及光学性质.     

HfSe2 monolayer stability tuning by strain and charge doping

Strain and charge doping are the effective ways to modulate the electronic and phonon properties of materials. The effects of biaxial tensile strains and charge dopings on the stabilities of HfSe₂ monolayer have been systematically investigated using first-principles methods. Its two-dimensional Young's modulus is only 65.4 N/m, and it is easy to be stretched. When the tensile strain is applied on HfSe₂ monolayer, two of its phonon modes soften with one frequency decreasing to zero at critical strain. Our results show that electron and hole dopings could suppress the softening of phonon modes, and significantly enhance the ideal strength by 28% and 36%, respectively. The calculations for electronic structures and phonon dispersions provide the theoretical references for future nano-device designing.     

硅烯双层纳米管自旋劈裂及半金属特性研究

在低维材料体系中寻找半金属,对实现纳米自旋电子器件具有重要的研究意义.基于第一性原理密度泛函理论计算方法,研究了AB堆栈的双层硅烯结构及其自旋极化的电子结构间的映射关系,发现其导带底和价带顶都具有负的变形势.基于此,我们预测硅烯双层在弯曲应力作用下,原本简并的空间自旋分布对称性打破,其自旋简并的电子态会出现自旋劈裂,因此双层硅烯纳米管会出现我们预期的半金属性.计算结果表明,AB堆栈结构的硅烯双层纳米管(55, 0)出现了半金属态,并且具有较好的磁稳定性.该结果对低维材料体系实现半金属性提供理论借鉴.     

Strain-induced insulator–metal transition in ferroelectric BaTiO_3(001) surface:First-principles study

The electronic properties of TiO_2-terminated BaTiO_3(001) surface subjected to biaxial strain have been studied using first-principles calculations based on density functional theory. The Ti ions are always inward shifted either at compressive or tension strains, while the inward shift of the Ba ions occurs only for high compressive strain, implying an enhanced electric dipole moment in the case of high compressive strain. In particular, an insulator–metal transition is predicted at a compressive biaxial strain of 0.0475. These changes present a very interesting possibility for engineering the electronic properties of ferroelectric BaTiO_3(001) surface.     

Strain effect on the electronic properties of 1T-HfS2 monolayer

We perform first-principles based on the density function theory to investigate electronic and magnetic properties of 1T-HfS₂ monolayer with biaxial tensile strain and compressive strain. The results show that HfS₂ monolayer under strains doesn’t display magnetic properties. When the strain is 0%, the HfS₂ monolayer presents an indirect band gap semiconductor with the band gap is about 1.252 eV. The band gap of HfS₂ monolayer decreases quickly with increasing compressive strain and comes to zero when the compressive strain is above −7%, the HfS₂ monolayer system turns from semiconductor to metal. While the band gap increases slowly with increasing tensile strain and comes to 1.814 eV when the tensile strain is 10%. By comparison, we find that the compressive strain is more effective in band engineering of pristine 1T-HfS₂ monolayer than the tensile strain. And we notice that the extent of band gap variation is different under tensile strain. The change of band gap with strain from 1% to 5% is faster than that of the strain 6–10%. To speak of, the conduction band minimum (CBM) is all located at M point with different strains. While the valence band maximum (VBM) turns from Γ point to K point when the strain is equal to and more than 6%.     

Moiré superstructures of silicene on hexagonal boron nitride: A first-principles study

Using first-principles calculations, we predicted hexagonal boron nitride (h-BN) with flat surface is an ideal substrate for silicene. Van der Waals interactions hold silicene and h-BN together, forming silicene/BN moiré superstructures. The moiré superstructures open a band gap of about 30 meV at the Dirac point of silicene at equilibrium distance. The band gap is almost independent of the rotation angle between the two lattices, but can be effectively tuned by changing the interlayer spacing. The high Fermi velocity of silicene is well preserved in these superstructures. These features are helpful in achieving applications of silicene in nanoscale electronic devices.     

外延压应变对BaTiO$lt;sub$gt;3$lt;/sub$gt;铁电体抗辐射性能影响的分子动力学研究

采用基于壳模型的分子动力学模拟方法, 研究了存在外延压应变时BaTiO₃铁电体的辐射位移效应, 以O原子作为初冲原子(primary knock-on atom, PKA), 能量为1 keV, 方向为[001], 分别计算了外延压应变为0, 0.4%, 0.8%, 1.2%, 1.6%, 2.0%时体系的缺陷数量、分布, 以及辐射前后的极化强度, 比较了压应变为2%以及无应变下损伤区域、缺陷离位距离和反向外电场下PKA的迁移距离. 结果表明, 随外延压应变增加体系极化近似线性增加, 辐射后极化降低幅度降低、缺陷产生的数量有所减小, 2% 压应变存在时缺陷原子的离位距离、PKA在反向外电场作用下的迁移距离和损伤区域都小于无应变的情况, 说明外延压应变的存在对辐射造成的晶格损伤具有抑制作用, 对辐射损伤具有改善作用, 可以通过引入外延压应变来调控BaTiO₃的辐射损伤. 关键词： 应变 3')" href="#">BaTiO₃ 辐射损伤 分子动力学模拟     

First-principles investigation of mechanical properties of silicene,germanene and stanene

Two-dimensional allotropes of group-IV substrates including silicene, germanene and stanene have recently attracted considerable attention in nanodevice fabrication industry. These materials involving the buckled structure have been experimentally fabricated lately. In this study, first-principles density functional theory calculations were utilized to investigate the mechanical properties of single-layer and free-standing silicene, germanene and stanene. Uniaxial tensile and compressive simulations were carried out to probe and compare stress-strain properties; such as the Young’s modulus, Poisson’s ratio and ultimate strength. We evaluated the chirality effect on the mechanical response and bond structure of the 2D substrates. Our first-principles simulations suggest that in all studied samples application of uniaxial loading can alter the electronic nature of the buckled structures into the metallic character. Our investigation provides a general but also useful viewpoint with respect to the mechanical properties of silicene, germanene and stanene.     

Spin-valley Hall conductivity of doped ferromagnetic silicene under strain

The spin-valley Hall conductivity(SHC-VHC) of two-dimensional material ferromagnetic graphene's silicon analog,silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane–Mele Hamiltonian.The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair(AC) direction. In particular, we study the effect of external static electric field on these conductivities under the strain.In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently.Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC(VHC) decreases(increases) for strains smaller than this value symmetrically while it increases(decreases) for strains larger than one.