镍铬合金中的位错运动与位错反应

对镍铬合金中单一滑移面内和两个滑移面间的位错反应,特别是动态下的反应,进行了透射电子显微镜观察,并对其中的一些位错组态进行了衍衬分析。1.六角位错网络主要是单一滑移面内柏氏矢量相差120°的两组位错间反应的结果;2.与螺型位错一样,刃型或混合型位错也能在两个滑移面间交滑移;3.两个滑移面间的位错反应有时在其截线方向生成不滑动的位错(如L.C.位错锁)并不能完全阻挡住这两个滑移面上的位错运动;4.在含铝、钛的镍铬合金中,超点阵位错的反应与不含铝、钛的合金或无序固溶体中的位错反应相似。 关键词：     

激光冲击690高强钢位错组态与晶粒细化的实验研究

为研究激光冲击材料内部位错组态和晶粒细化的关系,用脉冲激光对690高强钢试样进行了冲击强化处理,采用扫描电镜和透射电镜分别获得了冲击后试样的扫描电子显微像和透射电子显微像、高分辨电子显微像,并对高分辨电子显微像进行快速傅里叶逆变换,从位错组态角度建立了激光冲击690高强钢晶粒细化模型.结果表明,690高强钢试样经功率密度为5.09 GW/cm^2的激光冲击加载后,其材料内部位错增殖、表层晶粒细化,截面晶粒尺寸大小分布在80~200 nm;析出相与基体保持半共格关系,基体中分布着众多刃型位错、位错偶以及扩展位错等缺陷,其中位错偶是由带割阶的螺型位错运动形成;通过由位错、扩展位错、空位等构成的几何位错界面扩展交汇把原始大晶粒分割成细小晶粒;激光冲击690高强钢晶粒细化模型可以描述激光冲击690高强钢位错运动主导的晶粒细化过程.     

应变诱发四方相小角度对称倾侧晶界位错反应的晶体相场模拟

采用晶体相场法研究了外加应变作用下,不同取向差的四方相对称倾侧小角度晶界的位错运动与反应及反应过程中的位错组态,通过采用几何相位法对位错周围应变场进行了表征.结果表明,凝固弛豫达到稳态后,晶界两侧位错平行且方向相反,随晶界两侧晶粒取向差增大,位错数目增加,距离减小,且体系自由能增加.在外加应变作用下,晶界位错经历攀移、发射、反应湮灭等阶段,体系自由能呈现波动.当取向差增大时,位错运动方式由攀移向攀滑移转变,产生更多类型的位错组构型,并发生相应的位错与位错组之间的反应.对于不同构型的位错反应,正切应变驱动位错靠近,负切应变驱动位错湮灭.     

从铝合金的应变时效内耗考察位错与点缺陷的交互作用

研究了合金含量、合金元素和形变条件对铝合金应变时效内耗行为的影响．由此描述了点缺陷的分布状态和位错组态；指出了控制应变时效回复过程的因素是溶质原子的动性和溶质原子与位错的作用能。提出了能描述应变时效过程中位错─—点缺陷交互作用的位错弦脱钉和位错气团拖曳共同作用的复合模型，相应的理论处理合理地解释了实验现象。 关键词：     

硅蹼中位错和层错的X射线貌相研究

利用X射线投影貌相术观察和分析了硅蹼中的位错和层错。在生长态硅蹼中,除观察到柏氏矢量为1/2<110>的刃型、螺型与60°全位错以及柏氏矢量为1/6<112>的Shockley刃型半位错外,还观察到平行于硅蹼表面的大面积层错和蹼中的60°,30°Shockley半位错。位错在热处理过程中运动并发生位错反应形成近六角形的位错网络。热处理改变生长态硅蹼中层错的组态和衬度,并由于杂质聚集破坏了Shockley半位错的消象法则。还观察到层错象中的位错。对所观察的结果都分别作了分析和简要的讨论。 关键词：     

蠕变-疲劳交互作用的电子显微学研究

用透射电子显微镜和扫描电子显微镜研究了一种镍基合金(Nimonic 75型)蠕变-疲劳交互作用的机制。在温度873K,应力幅392MPa下进行的实验表明,蠕变、疲劳和“蠕变叠加疲劳”数据近似满足线性积累损伤规律。扫描电子显微镜断口观察表明,所有试样均发生晶间型断裂。但用透射电子显微镜进行的位错观察指出,在蠕变、疲劳和“蠕变叠加疲劳”试样中,位错组态有明显的差别。这些不同的位错组态,对晶间断裂过程产生了各自不同的影响,因而蠕变损伤与疲劳损伤相互独立,在宏观上表现出线性交互作用的规律。本工作表明,透射电子显微 关键词：     

钼晶体中的位错线蚀象的研究

实验结果表明,应用甲醇、硫酸、盐酸的混合液为电解浸蚀剂,可以在钼晶体的{100},{111}及{110}面上显示位错蚀斑,而在{111}面及{110}面上同时可以显示出排列成平行线或六方网络的蚀线,这些蚀线被证明为位错线的蚀象。根据观测结果,总结出解释位错线蚀象的经验规律:观测到的蚀象相当于一定深度内位错线在观察面的投影;蚀象的宽度决定于位错线段到原始表面的距离,距离愈远,宽度愈细,类似于一种夸张的光学透视效应,因而根据蚀象就可以直接推出位错线在空间的位置,采用多次浸蚀的方法,对于一些位错空间排列组态的实     

直拉硅单晶原生微缺陷的观察

对沿<100>方向生长的p型和沿<111>方向生长的n型宏观无位错直拉硅单晶,用铜缀饰X射线形貌术和腐蚀法观察到两种不同类型的微缺陷,对n型硅单晶还观察到一种特殊组态的微缺陷。对观察到的微缺陷的分布、组态进行了初步的分析。本文首次采用X射线透射投影和截面形貌术对硅单晶原生微缺陷进行直接观察,获得了相应的微缺陷图。所观察到的微缺陷的组态、尺度、分布等与铜缀饰X射线透射形貌图所示结果一致。 关键词：     

多晶X射线线形傅氏分析方法在合金材料力学性能预测上的应用

缺陷组态直接涉及到结构材料的力学性能,特别是位错亚结构(DSS)为最重要的缺陷组态中的第一个。本文评论并叙述了一种由王煜明完善并发展了的关于DSS的实用X射线线形傅里叶综合分析方法。根据此法进行了定量预测合金材料的力学性能,同时证明本方法的实际应用价值。 关键词：     

纳米催化剂Pt/C的X射线衍射线形分析

X射线衍射线形与晶体材料的微观结构密切相关.在晶粒尺寸衍射线形和微应变衍射线形可由Voigt函数近似描述的前提下,本文较详细地论述了由X射线衍射线形分析获取晶粒尺寸和位错等微观结构信息的方法.采用这种方法,对乙二醇还原法制备的Pt/C催化剂进行了X射线衍射线形分析.样品晶粒尺寸分布的对数正态均值为0.95 nm,对数正态方差为0.37.X射线衍射线形分析所得晶粒尺寸分布与透射电镜的测试结果符合较好.对样品的衍射线形积分宽度进行细致的比较,发现存在各向异性展宽现象.如果衍射线的各向异性展宽主要是由伯格斯矢量为1/2〈110〉的位错引起,可进一步计算位错密度值.结果表明,位错组态无论是螺型位错还是刃型位错,位错密度值的量级均约为1015/m2.     

Dislocation content of geometrically necessary boundaries aligned with slip planes in rolled aluminium

Previous studies have revealed that dislocation structures in metals with medium-to-high stacking fault energy, depend on the grain orientation and therefore on the slip systems. In the present work, the dislocations in eight slip-plane-aligned geometrically necessary boundaries (GNBs) in three grains of near 45° ND rotated cube orientation in lightly rolled pure aluminium are characterized in great detail using transmission electron microscopy. Dislocations with all six Burgers vectors of the ½?1?1?0? type expected for fcc crystals were observed but dislocations from the four slip systems expected active dominate. The dislocations predicted inactive are primarily attributed to dislocation reactions in the boundary. Two main types of dislocation networks in the boundaries were identified: (1) a hexagonal network of the three dislocations in the slip plane with which the boundary was aligned; two of these come from the active slip systems, the third is attributed to dislocation reactions (2) a network of three dislocations from both of the active slip planes; two of these react to form Lomer locks. The results indicate a systematic boundary formation process for the GNBs. Redundant dislocations are not observed in significant densities.     

The distribution of dislocations in slip bands of Fe-3% Si alloy single crystals deformed by bending

The distribution of dislocations at the ends of slip bands was studied by etching on surfaces parallel to the slip plane. In these places the slip band is formed by groups of asymmetric dislocation loops several hundred microns wide. The long mixed-type parts of these loops running nearly equidistantly and lying in near planes, are the equilibrium arrangement of dislocations of the same sign in the shear stress gradient. From the results we can judge that the dislocation sources are at larger distances from the ends of the slip bands and that the dislocation groups at the ends of the slip bands are sources of large stress fields.     

Interactions of glide dislocations in a channel of a persistent slip band

Two unlike dislocations gliding in parallel slip planes in a channel of a persistent slip band are considered. Initially they are kept apart in straight screw positions. As the dislocations are pushed by the applied stress between two walls in the opposite directions, they bow out and attract one another forming a dipole. With the increasing stress the dislocations become more and more curved, until they separate. The walls of the channel are represented by elastic fields of rigid edge dipoles. The dislocations are modelled as planar curves approximated by moving polygons. The objective of the simulations is to determine the stress in the channel needed for the dislocations to escape one another. The stress and strain controlled regimes considered provide upper and lower estimates of the escape stress. The results are compared with the studies by Mughrabi and Pschenitzka, and Brown and the recent dislocation dynamics estimates. Problems encountered in the dislocation dynamics evaluation of the escape stress are analyzed.     

Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC

Morphology of single Shockley-type stacking faults (SFs) generated by recombination enhanced dislocation glide (REDG) in 4H–SiC are discussed and analysed. A complete set of the 12 different dissociated states of basal-plane dislocation loops is obtained using the crystallographic space group operations. From this set, six different double rhombic-shaped SFs are derived. These tables indicate the rules that connect shapes of SFs with the locations of partial dislocations having different core structures, the positions of slip planes in a unit cell, and the Burgers vectors of partial dislocations. We applied these tables for the analysis of SFs generated by the REDG effect reported in the past articles. Shapes, growing process of SFs and perfect dislocations for origins of SFs were well analysed systematically.     

一种镍基合金高温蠕变过程的电子显微镜透射观察

本文在文献[1]的基础上,用电子显微镜透射方法研究了一种镍基合金(Ni80Cr20Ti)在高温蠕变第一和第二阶段内的位错结构。对蠕变第一阶段进行了较多的观察和分析。结果表明,在高温蠕变第一阶段内,形成了大量的零散位错,它们一般不处在滑移面上,并且大多是混合型位错,因此,它们是刃型位错攀移和螺型位错交滑移联合作用的结果。 关键词：     

In situ TEM characterisation of dislocation interactions in α-titanium

In situ straining in the transmission electron microscope and diffraction-contrast electron tomography has been applied to investigate dislocation interactions in α-Ti. Dislocation debris, in the form of small loops, was seen to form from sequential cross-slip events. Electron tomography provided direct three-dimensional visualisation of the dislocation structures, allowing accurate identification of slip planes, dislocation line directions and spatial relations between dislocations.     

Elastic interaction between two parallel dislocations in non-parallel slip planes

The elastic interaction between two parallel dislocations which can glide in non-parallel slip planes is studied under the simplifying assumption that the dislocation glide velocity is proportional to stress. The motion of the two dislocations is represented by a motion of one reference point in a configuration plane. It is concluded that the contribution of the long-range elastic interaction between individual dislocations from different slip systems to work hardening is negligible, compared to the contribution from the formed attractive junctions. Especially, two parallel edge dislocations with mutually perpendicular Burgers vectors can co-exist in minimum energy positions, however, they can be separated by an arbitrarily small external stress.     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

钼单晶体中亚晶界位错结构的研究

本文应用蚀象法对电子束浮区区熔法制得的原生态钼单晶体中的亚晶界位错结构进行了直接观测。对于实验结果进行了细致的分析,并与亚晶界的Frank公式的一些预期结果比较,全面地证实了理论预测。对(111)面上平行蚀线方向的测量表明,它们大体沿着1/2〈111〉刃型位错的滑移面及攀移面的交线,从而证实了它们是这种位错所组成的一组位错倾侧型晶界。通过对蚀斑三叉亚晶界的分析,检验了推广后的Read-Shockley公式,同时表明存在着两组位错的倾侧晶界。对于(111)面上观察到的15组蚀线网络进行了分析,结果表明其中5组是1/2〈111〉/〈100〉网络,9组是〈100〉/〈110〉网络。分析中,除去应用Carrington等所发展的极图分析法以外,我们还根据Frank公式所规定的网线间距的关系式,提出了进一步定量检验的分析方法。实践证明,当极图分析不能获得唯一的结果时,这种定量检验法可以有效地确定位错网络的Burgers矢量。此外,我们还观察到奇位错和亚晶界交互作用的事例,特别是奇位错在亚晶界上引起“台阶”以及夹杂物和亚晶界交互作用的迹象。不同类型的亚晶界交接以及非平衡态的亚晶界也是经常可以观察到的。以上结果表明,蚀象法对于定量地研究原生态晶体中的亚晶界位错结构是极其有效的,其能力并不亚于电子显微镜薄膜透射法。