CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究

用深能级瞬态谱和光致发光研究了无背接触层的CdS/CdTe薄膜太阳电池的杂质分布和深能级中心.得到了净掺杂浓度在器件中的分布.确定了两个能级位置分别在E_V+0365 eV和E_V+0282 eV的深中心，它们的浓度分别为167×10¹² cm^-3和386×10¹¹ cm^-2，俘获截面分别为143×10^-14cm²和153×10^-16cm².它们来源于以化学杂质形式存在的Au和（或）Te_Cd^-复合体，或与氩氧气氛下沉积CdTe时的氧原子相关. 关键词： 深能级瞬态谱 光致发光 CdS/CdTe太阳电池

Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells

Impurities and deep levels in CdS/CdTe thin film solar cells with no back-contact layer were studied by deep level transient spectroscopy and photoluminescence. They could lower the device performance notably. Distribution of net carrier concentration was obtained. Two deep levels at E_v+0.365 eV and E_v+0.282 eV were determined with concentration of 1.67×10¹² cm^-3 and 3.86×10¹¹ cm^-3, respectively, and with capture cross section of 1.43×10^-14 cm² and 1.53×10^-16 cm², respectively. They are attributed to chemical impurities like Au and/or a singly charged tellurium vacancy complex, or related to O atoms introduced by the deposition of CdTe in O₂ and Ar ambient.