Eu3+掺杂的Sr2CeO4发光材料的光致发光研究

利用高温固相反应法制备了Eu³⁺掺杂的Sr₂CeO₄样品,并对其吸附水前后的光谱特性进行了研究.结果发现,对于刚制备的Sr_2-xEu_xCeO_4+x/2样品, 在Ce⁴⁺—O^2-的电荷迁移激发中,只有强激发带(～35700cm^-1)与Eu³⁺离子间存在能量传递,而弱激发带 (～29400cm^-1)只是引起Ce⁴⁺—O^2-的电荷迁移发射;在Sr_2-xEu_xCeO_4+x/2样品吸附水后,Eu³⁺的线状吸收跃迁强度显著增加, Ce⁴⁺—O^2-两个激发带均向Eu³⁺离子传递能量. Ce⁴⁺—O^2-强激发带通过交换作用向Eu³⁺离子传递能量,而弱激发带与Eu³⁺离子间的能量传递机理是非辐射多极子近场力的相互作用. 关键词： 2-xEu_xCeO_4+x/2')" href="#">Sr_2-xEu_xCeO_4+x/2 发光性质 能量传递 吸附水     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

连续离子层吸附反应沉积后硫化法制备柔性铜锌锡硫薄膜太阳电池

在柔性钼箔衬底上采用连续离子层吸附反应法(successive ionic layer absorption and reaction)制备ZnS/Cu2SnSx叠层结构的预制层薄膜,预制层薄膜在蒸发硫气氛、550 C温度条件下进行退火得到Cu2ZnSnS4吸收层.分别采用EDS,XRD,Raman,SEM表征吸收层薄膜的成分、物相和表面形貌.结果表明,退火后薄膜结晶质量良好,表面形貌致密.用在普通钠钙玻璃上采用相同工艺制备的CZTS薄膜表征薄膜的光学和电学性能,表明退火后薄膜带隙宽度为1.49 eV,在可见光区光吸收系数大于104cm 1,载流子浓度与电阻率均满足薄膜太阳电池器件对吸收层的要求.用上述柔性衬底上的吸收层制备Mo foil/CZTS/CdS/i-ZnO/ZnO:Al/Ag结构的薄膜太阳电池得到2.42%的效率,是目前报道柔性CZTS太阳电池最高效率.     

Luminescence of ZnWO4 and CdWO4 thin films prepared by spray pyrolysis

Thin films of ZnWO₄ and CdWO₄ were prepared by spray pyrolysis and the structural, optical, and luminescence properties were investigated. Both ZnWO₄ and CdWO₄ thin films showed a broad blue-green emission band. The broad band of ZnWO₄ films was centered at 495 nm (2.51 eV) consisted of three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 540 nm (2.30 eV). The broad band of CdWO₄ films at 495 nm (2.51 eV) could be decomposed to three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 545 nm (2.28 eV). These results are consistent with emission from the WO₆⁶⁻ molecular complex. The luminance and efficiency for ZnWO₄ film at 5 kV and 57 μA/cm² were 48 cd/m² and 0.22 lm/w, respectively, and for CdWO₄ film the values were 420 cd/m² and 1.9 lm/w.     

Positive and negative magnetoresistance in Fe3O4-based heterostructures

Fe₃O₄-based heterostructures, including Fe₃O₄/MgO/Fe₃O₄, Fe₃O₄/MgO/Si and Fe₃O₄/SiO₂/Si, were fabricated by magnetron sputtering to investigate the perpendicular-to-plane magneto-transport properties. In the Fe₃O₄/MgO/Fe₃O₄ and Fe₃O₄/MgO/Si heterostructures, the typical magneto-transport properties of single Fe₃O₄ films, such as negative magnetoresistance (MR) and extreme values of MR−T curves at 120 K, were observed, suggesting that the spin polarization of conducting electrons conserves through MgO barrier. MR in the Fe₃O₄/MgO/Fe₃O₄ heterostructure is larger than that in the Fe₃O₄/MgO/Si heterostructure, because the spin of electrons is disturbed in the depletion layer of Si and the SiO₂ layer introduced by Fe₃O₄/MgO growth. The Fe₃O₄/SiO₂/Si heterostructure has a positive MR of 2% at 120 K, which may originate from the scattering of conducting electrons in amorphous SiO₂ and the spin polarization reversal at the Fe₃O₄/SiO₂ interface.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺，制备了钼掺杂铁电陶瓷样品SrBi₄Ti₄O₁₅(SBTi)铁电陶瓷SrBi_4-2x/3Ti_4-xMo_xO₁₅(x=0.00，0.003，0.012，0.03，0.06，0.09).X射线衍射的结果表明，样品均为单一的层状钙钛矿结构相，Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现，样品晶粒为片状，随掺杂量的增加，晶粒逐 关键词： 4Ti₄O₁₅')" href="#">SrBi₄Ti₄O₁₅ Mo掺杂 剩余极化 居里温度     

NbTi0.5Ni0.5O4 as anode compound material for SOFCs

NbTi_0.5Ni_0.5O₄ (NTNO) has been prepared using solid state synthesis and investigated as a potential anode material. The oxide form of NTNO has single phase rutile-type structure with tetragonal (P42/mnm) space group. The reduced form is a composite of nano-scaled particles of metallic Ni and Nb_1.33Ti_0.67O₄ phase. Reduced NTNO showed high electronic conductivity up to 280 S.cm^− 1 at 900 °C in reducing atmosphere, but suffers from low CTE equal to 3.78 10^− 6 K^− 1. Studies of NTNO as anode material were carried out in a three electrode - electrochemical half cell configuration under pure humidified H₂ at 900 °C using a 2 mm thick zirconia electrolyte and without any additional current collector material. The results show a reasonable series resistance (R_s) equal to 2.7 Ωcm² (about 50% higher than for metallic gold layers) indicating a good current collection performance for a 10 μm layer of material. The polarization resistance (R_p) was equal to 33 Ωcm² and is attributed to a poor density of three phase boundaries (TPB) and shortage of oxide ion conduction in the anode layer. The results show the potential of NTNO as an anode material, especially after optimization of the microstructure towards the increase of TPB length.     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si₃N₄层在ZrN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响. 一系列不同Si₃N₄层厚度的ZrN/Si₃N₄纳米多层膜通过反应磁控溅射法制备. 利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明，由于受到ZrN调制层晶体结构的模板作用，溅射条件下以非晶态存在的Si₃N₄层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体，ZrN/Si₃N₄纳米多层膜形成共格外延生长的柱状晶，并相应地产生硬度升高的超硬效应. Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

离子速度成像系统校准及1,4-氯溴丁烷的紫外光解动力学

大气臭氧层破坏越来越严重, 卤代烷烃在太阳紫外线辐射下解离生成破坏臭氧的游离态卤素原子, 是主要元凶之一. 本文选用碘甲烷作为校准分子, 利用离子速度成像技术和共振增强多光子电离技术测得碘甲烷在266 nm紫外光解离下产生的基态碘原子I(²P_3/2)在不同聚焦电压下的离子速度影像, 得到离子速度成像系统的放大系数N=1.13. 并利用该系统研究了1, 4-氯溴丁烷在～ 234 nm紫外辐射下的解离动力学, 分析讨论了解离产生的基态Br (²P_3/2)和激发态Br^* (²P_1/2)的速度和角度分布信息, 揭示了1, 4-氯溴丁烷在～ 234 nm紫外光解离产生基态Br原子和激发态Br^* 原子的通道都是源于C-Br键排斥势能面上的快速解离. 文中通过计算碎片影像角度分布的各项异性参数β值, 得到了生成基态Br(²P_3/2)和激发态Br^* (²P_1/2) 两个解离通道中的平行跃迁和垂直跃迁比例. 另外, 本文还对氯溴甲烷, 1, 2-氯溴乙烷, 1, 3-氯溴丙烷和1, 4-氯溴丁烷在～ 234 nm下的光解动力学进行比较, 分析得到双卤代烷烃分子解离机理对烷基支链长度的依赖关系.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Crystallization of amorphous Si3N4 and superhardness effect in HfC/Si3N4 nanomultilayers

HfC/Si₃N₄ nanomultilayers with various thicknesses of Si₃N₄ layer have been prepared by reactive magnetron sputtering. Microstructure and mechanical properties of the multilayers have been investigated. The results show that amorphous Si₃N₄ is forced to crystallize and grow coherently with HfC when the Si₃N₄ layer thickness is less than 0.95 nm, correspondingly the multilayers exhibit strong columnar structure and achieve a significantly enhanced hardness with the maximum of 38.2 GPa. Further increasing Si₃N₄ layer thickness leads to the formation of amorphous Si₃N₄, which blocks the coherent growth of multilayer, and thus the hardness of multilayer decreases quickly.     

(Bi,La)4Ti3O12-Sr(Bi,La)4Ti4O15共生结构铁电材料性能研究

采用固相烧结工艺，制备了不同La掺杂量(x=0.00，0.25，0.50，0.75，1.00，1.25和1.50) 的(Bi, La)₄Ti₃O₁₂-Sr(Bi, La)₄Ti4O₁₅ (SrBi_8-xLa_xT i₇O₂₇)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析 ，并测量铁 关键词： 4Ti₃O₁₂-SrBi₄Ti₄O₁₅')" href="#">Bi₄Ti₃O₁₂-SrBi₄Ti_{4O15 La掺杂 铁电性能 居里温度 弛豫铁电}     

A facile synthesis of monodisperse CoFe2O4/SiO2 nanoparticles

Aminated-CoFe₂O₄/SiO₂ magnetic nanoparticles (NPs) were prepared from primary silica particles using modified StÖber method. By optimizing the preparation conditions, monodisperse CoFe₂O₄/SiO₂ NPs with high amino groups’ density were obtained, which is necessary for enzyme immobilization. TEM confirm that the sample is a core/shell structure. These aminated-CoFe₂O₄/SiO₂ NPs have narrow size distributions with a mean size of about 60 nm. Moreover, the aminated-CoFe₂O₄/SiO₂ NPs can be easily dispersed in aqueous medium. The experimental results also show that the NPs have superparamagnetism, indicating that the aminated-CoFe₂O₄/SiO₂ NPs can be used as an effective carrier for the enzyme immobilization.     

Investigations on co-evaporated Cu2SnSe3 and Cu2SnSe3-ZnSe thin films

Cu₂SnSe₃ is an important precursor material for the growth of Cu₂ZnSnSe₄, an emerging solar cell absorber layer via solid state reaction of Cu₂SnSe₃ and ZnSe. In this study, we have grown Cu₂SnSe₃ (CTSe) and Cu₂SnSe₃-ZnSe (20%) films onto soda-lime glass substrates held at 573 K by co-evaporation technique. The effect of annealing of these films at 723 K for an hour in selenium atmosphere is also investigated. XRD studies of as-deposited Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films indicated SnSe as secondary phase which disappeared on annealing. The direct optical band gap of annealed Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films were found to be 0.90 eV and 0.94 eV respectively. Raman spectroscopy studies were used to understand the effect of ZnSe on the properties of Cu₂SnSe₃.     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

Preparation and characterization of multi-functional CoFe2O4-ZnO nanocomposites

Multi-functional magnetic, photoluminescent and photocatalytic CoFe₂O₄-ZnO nanocomposites were successfully synthesized by a collosol method. The average diameter of the prepared CoFe₂O₄-ZnO nanocomposites was 30±5 nm, and a diffusion layer was formed to link CoFe₂O₄ and ZnO. The saturation magnetization of the CoFe₂O₄-ZnO nanocomposites was 8.99 emu/g. Generation of ZnO from Zn(OH)₂ collosol was nearly complete after thermal decomposition at about 380 °C. A photoluminescence emission peak was observed at 443 nm when excitated at 350 nm. Degradation of methyl orange is performed by CoFe₂O₄-ZnO nanocomposites under ultraviolet radiation, with a degradation rate of up to 93.9%.     

Flowerlike PtCl4/Bi2WO6 composite photocatalyst with enhanced visible-light-induced photocatalytic activity

Flowerlike PtCl₄/Bi₂WO₆ composite photocatalyst was successfully synthesized through a simple two-step method involving a template-free hydrothermal process and the following impregnation treatment. The samples were fully characterized by the study of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), and UV-Vis absorption spectra. The results indicated that the doping of Pt species did not affect the crystal structure and the morphology of Bi₂WO₆ photocatalyst, but it had great influences on the photocatalytic activity of Bi₂WO₆ towards rhodamine-B (RhB) degradation. Besides, the Pt species was found to be present as PtCl₄ in the composite samples, and also an optimal Pt species content on the surface of Bi₂WO₆ photocatalyst was discovered with the highest photocatalytic ability. The improved photocatalytic performance could be ascribed to the enhanced interfacial charge transfer and the inhibited recombination of electron-hole pairs. Meanwhile, a possible mechanism for RhB photocatalytic degradation over PtCl₄/Bi₂WO₆ catalyst was also proposed.