Analysis of a diode-pumped Nd:YVO4 laser passively Q switched with GaAs

A diode-pumped Nd:YVO₄ laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the influence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse profile, pulse energy and pulse width of the Q switching with GaAs are simulated by using the conventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whole.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Intracavity-frequency-doubled Q-switched and mode-locked Nd:Lu0.15Y0.85VO4/KTP green laser with AO modulator and central SESAM

By using mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, KTP as frequency-doubling crystal, a diode-pumped intracavity-frequency-doubled Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄/KTP green laser with acousto-optic (AO) modulator and central semiconductor saturable absorption mirror (C-SESAM) is realized by using a V-type cavity. The QML laser characteristics such as the pulse width, single-pulse energy, have been measured for different modulation frequencies of the AO modulator. In comparison with the singly passively QML green laser with central SESAM, the doubly QML green laser can generate more stable and shorter pulses with higher peak power. Based on the coupled rate equations for a diode-pumped doubly QML green laser with AO and C-SESAM, in which the saturated absorption mechanism of C-SESAM is considered, the recurrence relation of the relative amplitude of the mode-locking pulses is given and the related numerical simulations are in good agreement with the experimental results.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Theoretical and experimental study of single mode-locking pulse generation with low repetition rate in a dual-loss-modulated QML YVO4/Nd:YVO4 laser with EO and GaAs

Using electro-optic (EO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser at 1.06 μm is realized. The experimental results show that the number of the mode-locking pulses underneath the Q-switched envelope decreased with increasing pump power. With an output coupling of 6.5 %, the single mode-locking pulse underneath the Q-switched envelope with 1 kHz repetition rate was obtained when the pump power exceeded 4.65 W. At a pump power of 8.25 W for an output coupling of 10 %, a stable mode-locking pulse train at a repetition rate of 1 kHz was achieved with pulse energy as high as 582 μJ and pulse duration of about 580 ps, corresponding to a peak power of 1 MW. Using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled rate equations for diode-pumped doubly QML YVO₄/Nd:YVO₄ laser are given and the numerical solutions of the equations are basically in accordance with the experimental results.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO4/KTP green laser with AO and GaAs

By simultaneously using both active and passive Q-switches in the same cavity, a diode-pumped doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs semiconductor saturable absorber is realized. A comparison between c-cut and a-cut Nd:GdVO₄ crystals shows that the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate narrower pulse and higher peak power when the incident pump power is higher than 4.4 W. In addition, the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate more symmetric and shorter pulse in comparison with singly AO- or GaAs-Q-switched laser. The coupled rate equations are used to simulate the process of these lasers.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.     

The acousto-optic Q-switched mode-locking Nd:YVO4 laser

Q-switched mode locking (QML) has been observed in acousto-optic Q-switched Nd:YVO₄ laser that contained no mode-locking components. It was found that QML was easily realized in a long cavity and the modulation depth was observed to increase with increased cavity length. The maximum modulation depth was as high as 90%. This phenomenon is explained by the introduction of gain-related effect in the gain medium. The longitudinal modes at higher frequency, than the central frequency of the gain profile, experience positive guiding, which results in mode locking of these modes.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser

We demonstrated an efficient and compact, diode-pumped passively Q-switched Nd:YVO₄ laser operation at 1.064 μm wavelength with high repetition rate, using Cr⁴⁺:YAG as saturable absorber, formed with a simple flat–flat resonator. The maximum CW output power of 4.05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1.4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr⁴⁺:YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 μJ and the highest peak power of 3 kW were obtained when the Cr⁴⁺:YAG crystal with an initial transmission of 60% was used.     

Diode-pumped Q-switched and mode-locked Nd:LuVO4/KTP green laser with AO and Cr4+:YAG saturable absorber

A diode-pumped Q-switched and mode-locked (QML) Nd:LuVO₄/KTP green laser with acousto-optic modulator (AOM) and Cr⁴⁺:YAG saturable absorber is presented. By inserting an AOM into the laser cavity, the stability of the QML green laser pulse with AO and Cr⁴⁺:YAG is improved, the modulation depth is increased and the pulse width of Q-switched pulse envelope is significantly compressed in comparison with that of the singly passively QML green laser with Cr⁴⁺:YAG. The experimental results show that the peak power of the doubly QML green laser pulse is much higher than that of the singly passively QML green laser pulse.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Experimental study on doubly QML Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with AO modulator and central SESAM

By using double-mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, a diode-pumped doubly Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and central semiconductor saturable absorption mirror (SESAM) is realized for the first time. The Q-switched envelope modulation depth is nearly 100%.The average output power and the pulse width of the Q-switched envelope etc. for different AO modulator repetition rates have been measured. The experimental result show that Nd:Lu_0.15Y_0.85VO₄ crystal is an excellent laser medium for doubly QML lasers.     

Theoretical and experimental study of a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO4/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber

By considering the Gaussian transversal and longitudinal distributions of the intracavity photon density as well as the walk-off effect of KTP crystal, the coupled rate equations of the doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber are given. These equations are solved numerically and the doubly Q-switched green laser characteristics, such as the pulse width and the pulse symmetry, have been obtained. In the experiment, a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with AO and GaAs is presented. This doubly Q-switched green laser can generate the almost absolutely symmetric pulse profile with the shorter pulse width and the higher power than the singly Q-switched green laser. The experimental results are in agreement with the theoretically numerical calculations.     

Compact and efficient Kerr-lens mode-locked diode-pumped actively Q-switched YVO4-Nd:YVO4 laser

By using a simple linear configuration, a stable and efficient YVO₄-Nd:YVO₄ laser, actively Q-switched by an acousto-optic modulator and passively mode-locked by KLM is realized, from which the great average output power, the high efficiency are obtained and the mode-locked pulse inside the Q-switched pulse has a repetition rate of 470 MHz. The nearly 100% modulation depth of the Q-switched mode-locked pulses can be obtained at any pump power over the threshold. Considering the Kerr-lens effect of laser medium and Q-switching by an acousto-optic modulator, we have analyzed the self-mode-locked YVO₄-Nd:YVO₄ laser by using the nonlinear ABCD propagation matrix and the hyperbolic fluctuation mechanism. The numerical solutions are in good agreement with the experimental results.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length

In this paper, a stable end-pumped intracavity-frequency-doubled green laser was demonstrated. The interaction length of different pump systems before setting up the experiment was analyzed in order to find out an effective pump system. The experimental results indicate that the pump system in our configuration is beneficial to the efficient CW Nd lasers. A continue-grown composite crystal YVO₄/Nd:YVO₄, with Nd³⁺ concentration doping of 0.3 at.%, is used as laser medium. With an incident pump power of 27.5 W, as high as 7.2 W of CW output power at 532 nm was achieved. The optical-to-optical conversion efficiency of 26.2% was obtained in CW modes with a flat-flat cavity design.