基于PVP和PbSe三维自组装超晶格复合体系的电双稳器件（英文）

采用旋涂工艺将Pb Se三维自组装超晶格镶嵌在两层聚合物PVP中,制备了基于PVP和Pb Se三维自组装超晶格复合体系的电双稳器件,器件结构为ITO/PVP/Pb Se三维自组装超晶格/PVP/Al,研究了其电学性能和记忆效应。与参比器件ITO/PVP/Al相比,器件ITO/PVP/Pb Se三维自组装超晶格/PVP/Al的电流-电压特性呈现出非常明显的电双稳特性和非易失记忆行为,在相同的电压下同时具有两种不同的导电状态:低电导的关态和高电导的开态。当PVP与Pb Se超晶格的质量比为1∶1时,器件性能最好,其最大电流开关比为7×104,经过104s仍几乎无衰减。通过对电流-电压曲线拟合,利用不同的导电模型对器件的载流子传输机制进行了解释。结果表明,Pb Se三维自组装超晶格作为电荷陷阱,可以俘获、储存及释放电荷,对器件的电双稳性能能起决定性作用。     

MEH-PPV/PEG聚合物电双稳器件的研究

将PEG(聚乙二醇)引入到ITO/MEH-PPV(聚(2-甲氧基,5(2'-乙基己氧基)-1,4-苯撑乙烯撑)/Al三明治器件中,实现了很好的电双稳性能。通过改变PEG的分子量、浓度以及退火温度等条件,对器件性能进行了优化。通过电流-电压(I-V)测试研究了不同器件的性能,结果表明,分子量为4 000的PEG,在30 mg/mL的浓度下,通过120℃退火制备的薄膜,其器件性能最优,电流开关比可以达到10~3以上。利用SEM测试研究了活性层的膜形貌,并结合电流-电压(I-V)曲线的线性拟合,分析了电荷在器件中的传输过程。研究发现,相分离产生的陷阱对电荷的俘获是该器件产生电双稳特性的主要原因。     

PbS纳米晶修饰的ZnO/PVP复合电双稳器件阻变机制

采用简单旋涂工艺制备了具有ITO/PVP/ZnO NCs/PbS NCs/PVP/Al 夹心结构的有机/无机复合电双稳存储器件,与没有PbS纳米晶修饰层的器件ITO/PVP/ZnO NCs/PVP/Al相比,PbS纳米晶的引入使目标器件的开关比提高了2个数量级。结合器件的I-V曲线和能级结构分析了PbS 纳米晶修饰层对器件阻变和载流子传输的影响。结果显示,PbS纳米晶层的加入不仅优化了器件能级结构,有利于载流子的俘获和释放,还修饰了ZnO纳米晶的表面缺陷,降低了器件载流子的复合损耗。     

基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制

用ZnS量子点与poly-4-vinyl-phenol (PVP)复合,通过简单的旋涂法制备了结构为ITO/ZnS:PVP/Al的一次写入多次读取(WORM)的有机双稳态器件。器件起始状态为OFF态,通过正向电压的作用,器件由OFF态转变为ON态,并且在正向或反向电压的作用下,器件始终保持在ON态,表现出良好的一次写入多次读取的存储特性。与不含ZnS量子点的器件相比,含有ZnS量子点的器件表现出明显的双稳态特性,其电流开关比达到10⁴,这说明ZnS量子点在器件中起到存储介质的作用。通过对器件电流-电压(I-V)特性的测试,详细讨论了器件的双稳态特性以及载流子传输机制,并且用不同的传导理论模型分析了器件在ON态和OFF态的电流传导机制。器件I-t曲线表明器件在大气环境中具有良好的永久保持特性。     

不同电介质结构下介质阻挡放电特性研究

设计制作了单面有氧化铟锡(ITO)导电介质层的双玻璃介质层的介质阻挡放电装置,研究了其放电特性,并将其与双玻璃介质层和单玻璃介质层的介质阻挡放电进行了比较.从电荷输运的角度分析,上述三种装置分别实现了电荷的二维、零维和三维输运.采用两种不同的双玻璃介质层装置,获得了单个稳定的放电丝.与无ITO导电层的双玻璃结构得到的单个放电丝相比,单面有导电ITO介质的双玻璃结构中,单放电丝呈"T"字型,其光晕是前者光晕的2倍,其放电电流大于前者电流,其放电时间间隔长短交替现象更为明显,且存在强度大小交替的现象.分析表明,壁电荷输运及二次电子发射的不同导致了不同电介质结构放电特性的不同. 关键词： 介质阻挡放电 壁电荷 二次电子发射     

基于金颗粒自组装烷基硫醇为缓冲层的有机太阳能电池

有机活性层和无机电极的界面修饰影响到有机太阳能电池性能。本文引入金纳米颗粒自组装烷基硫醇,改善有机/无机的界面。制备“ITO/金颗粒-硫醇自组装缓冲层/聚3-己基噻吩(P3HT)∶[6,6]-苯基-C61-丁酸甲酯(PCBM)/LiF/Al电极”结构的器件。自组装硫醇防止了因金颗粒与活性层直接接触导致的激子猝灭效应。我们研究了金纳米颗粒自组装不同链长的烷基硫醇对器件性能的影响,烷基硫醇的烷基链越长,硫醇对金颗粒的覆盖性越好,器件的短路电流越高。金纳米颗粒自组装十二烷基硫醇,短路电流J_SC由5.19 mA·cm-2提升到6.24 mA·cm-2,提高了20%。     

采用复合空穴注入层提高有机电致发光器件的性能

制备了以Ag/SAM/m-MTDATA为复合空穴注入层的NPB/Alq₃双层异质结发光器件,研究了器件的性能并与传统的器件进行了对比。考察了银膜厚度的变化对器件性能的影响。研究了光谱窄化以及微腔效应对器件的影响。研究结果表明:在ITO表面制备4-FTP自组装单分子膜修饰的5 nm厚的金属银膜,可以在保持阳极透明性的基础上,增强空穴的注入,改善界面的形貌,进而提高器件性能。制备的ITO/Ag/SAM/m-MTDATA/NPB/Alq₃/LiF/Al器件的启亮电压为4 V,最 大电流效率为6.9 cd/A, 最大亮度为34 680 cd/m²(12 V);优于以ITO为阳极的对比器件(25 300 cd/m² @12 V)。     

衬底对PTCDA薄膜结构与电荷输运特性的影响

在不同导电衬底(Au,Al和ITO)上制备了PTCDA薄膜,用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明,薄膜中的大部分PTCDA分子平面与衬底不平行,这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则,在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序,电子传输性能差。通过制备单层结构有机薄膜器件,研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论,并考虑电场强度对迁移率变化的影响,对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合,得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。     

嵌入Ag纳米颗粒层的DNA忆阻器

构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比I_ON/I_OFF能够达到10³. 器件的I-V特性受扫描电压幅值V_A的影响, 随着V_A的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压V_SET (V_RESET)和I_ON/I_OFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.     

高分子发光二极管载流子注入过程研究

采用交流阻抗谱，电容-电压，电容-频率等实验方法，研究了共轭高分子MEH-PPV(poly［2-methoxy，5-(2-ethylhexoxy)-1，4-phenylene vinylene］)发光二极管的载流子注入过程.对于结构为ITO/PEDOT/MEH-PPV/Ba/Al的发光器件，实验结果表明，电极界面是欧姆接触的，载流子的注入是非平衡的，器件薄膜中存在陷阱容易俘获注入电荷，形成空间电荷区，陷阱密度约为3.75×10¹⁶cm^-3. 关键词： 高分子发光二极管 交流阻抗谱 cole-cole图 载流子注入     

Ce3+注入对不同尺寸的nc-Si/SiO2 超晶格发光特性的影响

通过电子束蒸发方法以及高温退火处理,得到nc-Si/SiO₂超晶格。将样品分别注入剂量为2.0×10¹⁴ cm^-2和2.0×10¹⁵ cm^-2的Ce³⁺,再对其进行二次退火处理,获得多组样品。通过对样品光致发光光谱的分析发现,样品发光强度的变化不仅受到Ce³⁺注入剂量的影响,而且也受到nc-Si颗粒大小的影响。在相同注入计量和相同的二次退火处理温度下,nc-Si颗粒较大的样品经Ce³⁺注入后其发光强度增强较为明显。     

Electrical properties and switching mechanisms of flexible organic-inorganic bistable devices

The electrical properties of flexible organic-inorganic bistable devices fabricated with aluminum (Al) sandwiched between tris-(8-hydroxyquinoline) aluminum (Alq₃) and zinc selenide (ZnSe) layers were investigated. Current–voltage (I–V) measurements were conducted under conditions before, during, and after bending while changing the bending distance of the base plastic polyethylene terephthalate (PET) systematically. The maximum ON/OFF current ratios of the flexible bistable devices at flat and bent conditions were approximately 2.7×10⁴ and 1.9×10⁴, respectively. The conduction mechanisms in both ON and OFF states were analyzed by a theoretical model.     

Silica coating of Co–Pt alloy nanoparticles prepared in the presence of poly(vinylpyrrolidone)

This article describes a method for silica coating of Co–Pt alloy nanoparticles prepared in the presence of poly(vinylpyrrolidone) (PVP) as a stabilizer. The Co–Pt nanoparticles were prepared in an aqueous solution at 25–80 °C from CoCl₂ (3.0 × 10⁻⁴ M), H₂PtCl₆ (3.0 × 10⁻⁴ M), PVP (0–10 g/L), and NaBH₄ (4.8 × 10⁻³–2.4 × 10⁻² M). The silica coating was performed for the Co–Pt nanoparticle colloid containing the PVP ([Co] = [Pt] = 3.0 × 10⁻⁵ M) at 25 °C in (1/4) (v/v) water/ethanol solution with tetraethoxyorthosilicate (TEOS) (7.2 × 10⁻⁵–7.2 × 10⁻³ M) and ammonia (0.1–1.0 M). Silica particles, which had an average size of 43 nm and contained multiple cores of Co–Pt nanoparticles with a size of ca. 8 nm, were produced at 1.4 × 10⁻³ M TEOS and 0.5 M ammonia after the preparation of Co–Pt nanoparticles at 80 °C, 5 g/L PVP, and 2.4 × 10⁻² M NaBH₄. Their core particles were fcc Co–Pt alloy crystallites. Their saturation magnetization was 2.0-emu/g sample, and their coercive field was 12 Oe.     

InP掺杂超晶格的MOCVD生长与表征

用常压MOCVD技术生长了InP掺杂超晶格,所用源材料为TMIn和PH3.InP的载流子浓度低为8×1013cm-3,300K迁移率高达5744cm2/V·s.n型掺杂剂是DETe,p型为DMZn,两者在InP中的掺杂浓度均可达~1019cm-3.用不同激发强度下的低温PL谱,时间衰减,时间分辨PL谱和光反射(PR)谱技术表征了InP掺杂超晶格.文中给出了在不同激发强度下InP掺杂超晶格的4KPL谱,该样品由六层(n·p)组成,每层厚度200Å,掺杂浓度分别是1×1018cm-3和2×1018cm-3.发光峰值能量明显低于InP的禁带宽度,当激发强度增加时峰值能量移向高能边,这是真实空间中的间接跃迁特征.总PL信号衰减分成几步,每步都按指数规律,在4K情况下,衰减常数从6×10-8秒到7×10-4秒,具有明显间接带隙材料特征.InP掺杂超晶格中的量子尺寸效应用PR谱技术进行了研究.为描述InPnipi结构中的量子尺寸效应,引进了抛物型势阱模型,实验结果与根据引进模型所进行的计算相符.     

Excitonic instabilities,vacancies, and reconstruction of covalent surfaces

Two possibilities for explaining the superlattices of (111) surfaces of Si(7 × 7) and Ge(2 × 8) are considered. The equilibrium concentration of surface vacancies is related to the ratio of metallic and directional contributions to vacancy energies. The macroscopic thermo-dynamic explanation based on vacancy concentrations is preferred to an alternate microscopic one based on excitonic instabilities. A relation between anisotropy of surface energies and vacancy concentrations is proposed that predicts new superlattices for Si (100) 2 × 1, (110) 2 × 1, 5 × 1 and 4 × 5.     

Nonlinear optical properties of Au/PVP composite thin films

Colloidal Au and poly（vinylpyrrolidone） （PVP） composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of χ^（3）/α up to 0.56× 10-^10esu·cm is obtained, which is comparable to the best values reported in metal/oxlde composite films.     

The optical properties and energy transition process in nanocomposite of polyvinyl-pyrrolidone polymer and Mn-doped ZnS

This study has been carried out on the optical properties of polyvinyl-pyrrolidone (PVP), the energy transition process in nanocomposite of PVP capped ZnS:Mn nanocrystalline and the influence of the PVP concentration on the optical properties of the PVP capped ZnS:Mn nanocrystalline thin films synthesized by the wet chemical method. The microstructures of the samples were investigated by X-ray diffraction, the atomic absorption spectroscopy, and transmission electron microscopy. The results showed that the prepared samples belonged to the sphalerite structure with the average particle size of about 2–3 nm. The optical properties of samples are studied by measuring absorption, photoluminescence (PL) spectra and time-resolved PL spectra in the wavelength range from 200 to 700 nm at 300 K. From data of the absorption spectra, the absorption edge of PVP polymer was found about of 230 nm. The absorption edge of PVP capped ZnS:Mn nanoparticles shifted from 322 to 305 nm when the PVP concentration increases. The luminescence spectra of PVP showed a blue emission with peak maximum at 394 nm. The luminescence spectra of ZnS:Mn–PVP exhibits a blue emission with peak maximum at 437 nm and an orange–yellow emission of ion Mn²⁺ with peak maximum at 600 nm. While the PVP coating did not affect the microstructure of ZnS:Mn nanomaterial, the PL spectra of the PVP capped ZnS:Mn samples were found to be affected strongly by the PVP concentration.     

Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device

We present that the electrical bistability in organic-inorganic bistable devices based on tris-(8-hydroxyquinoline) aluminum (Alq₃) and zinc selenide (ZnSe) with the tri-layer structure of Alq₃/aluminum (Al)/ZnSe. The current-voltage characteristics of the bistable device exhibit two electrical states as low (OFF state) and high (ON state) conductivity with ON/OFF ratio about four orders of magnitude. The conduction mechanisms in both ON and OFF states were analyzed by theoretical model. In the OFF state, the conduction mechanisms can be explained by thermionic emission model, which the ON state can be described by ohmic conduction model. The retention times of both states are more than 8000 s, and the device can reproduce continuous write-read-erase-read switching cycles. Moreover, for the organic-inorganic bistable device was kept at one year in ambient condition without encapsulation. The device still exhibited the electrical bistable behavior. Consequently, the ZnSe layer may be led to improve the lifetime property of the bistable device which acted as a self-encapsulating layer.     

Electrical bistability and charge-transport mechanisms in cuprous sulfide nanosphere-poly(<Emphasis Type="Italic">N</Emphasis>-vinylcarbazole) composite films

In this study, electrically bistable devices were fabricated by incorporating cuprous sulfide (Cu₂S) nanospheres with mean size less than 10 nm into a poly(N-vinylcarbazole) (PVK) matrix. A remarkable electrical bistability was clearly observed in the current–voltage curves of the devices due to an electric-field-induced charge transfer between the dodecanethiol-capped Cu₂S nanospheres and PVK. The maximum ON/OFF current ratio reached up to value as large as 10⁴, which was dependent on the mass ratios of Cu₂S nanospheres to PVK, the amplitude of the scanning voltages, and the film thickness. The charge-transport mechanisms of the electrically bistable devices were described on the basis of the experimental results using different theoretical models of organic electronics.     

Third harmonic generation of laser radiation in Fe- and Zn-doped polyvinylpyrrolidone

The results of third-order nonlinear susceptibilities studies of Fe- and Zn-doped polyvinylpyrrolidone (PVP) aqueous solution in processes of third harmonic generation of Nd:YAG laser radiation are presented. Nonlinear susceptibilities of PVP:Fe and PVP:Zn were calculated to be 5×10^-13 esu and 3×10^-13 esu respectively. Third harmonic conversion efficiencies in these metallocomplexes were measured to be 8×10^-7 and 5×10^-7 respectively. The Z-scan method was applied to determine Kerr effect influence on frequency conversion process. The value of nonlinear refractive index of PVP:Fe at the wavelength of λ = 1064 nm was measured to be n ₂ = - 6.7×10^-13 esu. Received 30 November 2001 / Received in final form 27 March 2002 Published online 28 June 2002