Ce3+注入对不同尺寸的nc-Si/SiO2 超晶格发光特性的影响

通过电子束蒸发方法以及高温退火处理,得到nc-Si/SiO₂超晶格。将样品分别注入剂量为2.0×10¹⁴ cm^-2和2.0×10¹⁵ cm^-2的Ce³⁺,再对其进行二次退火处理,获得多组样品。通过对样品光致发光光谱的分析发现,样品发光强度的变化不仅受到Ce³⁺注入剂量的影响,而且也受到nc-Si颗粒大小的影响。在相同注入计量和相同的二次退火处理温度下,nc-Si颗粒较大的样品经Ce³⁺注入后其发光强度增强较为明显。

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation

In this paper, SiO/SiO2 superlattices samples were prepared on Si substrates by electron beam evaporation, and the thicknesses of SiO layers are 2 nm and 4 nm, 4 nm for all the SiO2 layers. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then,Ce3+ with a dose of 2.0×1014 cm-2 and 2.0×1015 cm-2 respectively was implanted into these samples with formed Si nanocrystals. After Ce3+ doped, the samples were re-annealing at 600 ℃. The photoluminescence (PL) spectra were observed by the fluorescence spectrometry. The PL spectra showed that the PL intensities of samples were not only dependent on the re-annealing temperature and the dose of Ce3+, but also dependent on the size of nc-Si. The experiment results proved that when the size of nc-Si is 4 nm; the effect of energy transfer between Ce3+ and nc-Si is more distinct.