首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device
Authors:K Onlaor  B Tunhoo  T Thiwawong  J Nukeaw
Institution:a Electronics and Control System for Nanodevice Research Laboratory, College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Road, Bangkok 10520, Thailand
b Thailand Center of Excellence in Physics, CHE, Ministry of Education, 328 Si Ayutthaya Rd., Bangkok 10400, Thailand
Abstract:We present that the electrical bistability in organic-inorganic bistable devices based on tris-(8-hydroxyquinoline) aluminum (Alq3) and zinc selenide (ZnSe) with the tri-layer structure of Alq3/aluminum (Al)/ZnSe. The current-voltage characteristics of the bistable device exhibit two electrical states as low (OFF state) and high (ON state) conductivity with ON/OFF ratio about four orders of magnitude. The conduction mechanisms in both ON and OFF states were analyzed by theoretical model. In the OFF state, the conduction mechanisms can be explained by thermionic emission model, which the ON state can be described by ohmic conduction model. The retention times of both states are more than 8000 s, and the device can reproduce continuous write-read-erase-read switching cycles. Moreover, for the organic-inorganic bistable device was kept at one year in ambient condition without encapsulation. The device still exhibited the electrical bistable behavior. Consequently, the ZnSe layer may be led to improve the lifetime property of the bistable device which acted as a self-encapsulating layer.
Keywords:Organic-inorganic nanodevice  Memory device  Conduction mechanism  Bistable device  Memory characteristics
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号