放电等离子固相烧结制备高密度LaB_6阴极性能

采用放电等离子烧结(SPS)技术,以碳化硼还原法制备的LaB6粉末为原料,制备了高致密LaB6多晶块体阴极,并系统研究了烧结温度、压力对LaB6烧结样品的物相、结构和性能的影响。确定了SPS烧结LaB6的最佳工艺为:压力50MPa,烧结温度1650℃,保温时间10min。实验结果表明:与其它LaB6多晶制备方法相比,SPS制备得到的LaB6烧结块体的力学及发射性能均有大幅提高,样品相对密度达到96.2%,维氏硬度达到1720kg/mm2,抗弯强度达到203.2MPa。样品在1520℃温度下发射电流密度达到17.41A/cm2,功函数为2.40eV。SPS制备法显著降低了LaB的烧结温度,缩短了烧结时间。     

放电等离子烧结原位合成LaxCe1-xB6化合物及性能研究

以LaH₂, CeH₂纳米粉和无定形B粉为原料, 通过放电等离子烧结原位合成法制备了单相、高致密度的La_xCe_1-xB₆稀土六硼化物. 系统研究了该系列化合物的晶体结构、表面织构、力学性能、电输运特性及热发射性能. 结果表明, 该方法制备出的样品致密度均高于96%, 维氏硬度最高值达到2310 kg/mm², 说明具有良好的力学性能. 热发射结果表明, 当阴极温度为1873 K, 外加电压为1 kV时, La_0.6Ce_0.4B₆的最大发射电流密度达到40.7 A/cm², 该值高于单纯LaB₆和CeB₆电流密度值. 因此, La_xCe_1-xB₆多元稀土六硼化物作为热阴极材料将有良好的应用前景. 关键词： 稀土六硼化物 阴极材料 热电子发射     

Nd含量对Bi_(6-x)Nd_xFe_(1.4)Ni_(0.6)Ti_3O_(18)多晶材料多铁性的影响

采用柠檬酸-硝酸盐法制备了Bi_(6-x)Nd_xFe_(1.4)Ni_(0.6)Ti_3O_(18)(BNFNT-x,x=0.00,0.10,0.20,0.25和0.30)前驱液,再经过干燥、烧结过程制备了单相多晶材料.研究发现,少量Nd掺杂有助于提高样品的铁电性能,BNFNT-0.25样品的铁电性能(2Pr)最大,约达到19.7μC/cm~2.室温下BNFNT-0.20样品磁性能(2Ms)最大约达到4.132 emu/g(1 emu/g=10–3 A·m~2/g).变温介电损耗结果表明Nd掺杂降低了Fe~(3+)和Fe~(2+)间的电子转移或跃迁的激活能.X射线光电子能谱结果表明小量Nd掺杂有助于增强Bi离子稳定性,对改善样品的铁电性能有积极意义.     

指数掺杂GaAs阴极光子增强热电子发射型太阳能转换器转化效率理论计算(英文)

光子增强热电子发射型太阳能转换器是一种理论效率极高的新型太阳能利用技术.提出利用指数掺杂GaAs材料作为光子增强热电子发射型太阳能转换器阴极,基于能量守恒及电子扩散漂移发射模型,理论计算了指数掺杂GaAs阴极光子增强热电子发射型太阳能转化器的转化效率.结果表明:指数掺杂GaAs可以显著提高光子增强热电子发射效率;指数掺杂GaAs光子增强热电子太阳能转化器转化效率随聚光倍数的增加和阴极表面电子复合速率减小而单调上升;当太阳基数大于200、阴极表面复合小于104 cm/s时,指数掺杂GaAs阴极光子增强热电子发射型太阳能转换器效率可达30%.     

白光LED用新型Ce,Pr掺杂的YAG单晶荧光材料的光谱性能研究

为了改善白光LED用荧光材料效率低、均匀性差、光衰大、寿命短及物化性能差等不足,本文采用单晶荧光材料取代荧光粉来制备白光LED,并对白光LED用新型YAG单晶荧光材料的制备和光谱性能进行了研究.采用提拉法生长了白光LED用Ce∶YAG及Pr,Ce∶YAG晶体,并通过吸收光谱,激发、发射光谱对晶体材料的光谱特性进行表征.研究表明,Ce∶YAG单晶荧光材料可以被发射波长460 nm左右的蓝光芯片有效激发,产生一个范围为480~650 nm宽峰发射.通过Pr3+,Ce3+离子共掺杂可以有效补偿Ce3+离子单掺杂YAG荧光材料发光中的红色发光成分.     

p型透明导电氧化物CuCr_(1 -x)Ca_xO_2的制备与光电性质研究

系统报道了铜铁矿CuCr1-xCaxO2 单相多晶材料的制备和光电性质研究结果、X光衍射 (XRD)以及电导的测量 .结果表明 ,适当的Ca2 + 取代Cr3 + 不改变材料的晶体结构 ,但能显著提高材料的导电性能 ,x =0 .0 6的原始Ca2 + 掺杂样品在室温的电导率达到 3.2× 10 -2 S/cm ,几乎比不掺杂样品的电导率提高了近 3个数量级 .所有掺杂样品的电导率随温度的变化曲线在 2 0 0～ 30 0K ,很好地符合Arrhenius关系 ,其Seebeck常数均为很大的正数 ,这表明所有样品均为典型的 p型半导体 ,其热激活能为 0 .2 7～ 0 .36eV .     

LaB6与TaC混合涂层热阴极

研究了一种LaB6与TaC混合涂层热阴极,其发射层通过均匀混合LaB6与TaC粉末得到。比较了该阴极在LaB6与TaC混合比例为1∶1, 2∶1和3∶1下的发射特性,发现混合型LaB6阴极的功函数与多晶LaB6阴极的非常接近,在3∶1的混合比例下,电极的发射电流稳定,得到的电流密度为30 A/cm2。该电极可被应用于需要大电流密度和超大面积阴极的真空电子器件及动态真空电子束设备中。     

溶胶-凝胶法制备W-Ir混合金属基阴极

 利用X射线衍射、扫描电镜等方法对用溶胶-凝胶法制备的阴极粉末的结构、形貌、粒度及阴极的表面和内部结构进行实验分析。测得阴极的发射性能在1 100 ℃时,直接偏离点电流密度为35 A/cm²。探讨了激活温度和时间对阴极发射性能的影响。结果证实了利用溶胶 凝胶法制备的W-Ir混合金属基阴极的表面特征、内部形貌、发射性能均优于普通的固液掺杂法。     

真空沟道结构GaAs光电阴极电子发射特性

光电阴极的发射电流密度和寿命限制了其在功率器件和大科学装置中的应用.本文结合光电阴极和场发射阴极电子发射理论,设计了大电流密度的真空沟道结构光电阴极组件,并使用覆膜和刻蚀技术制备了以GaAs衬底为阴极材料的光电阴极组件.光电阴极组件电子发射特性测试结果显示,常温状态下随入射光功率增加,阴极发射电流增加幅度逐步增大.光功率为5 W时,发射电流达到26.12 mA,电流密度达到5.33 A/cm~2.随光电阴极组件工作温度增加,阴极材料内的载流子浓度也会相应地增加,提高了负极对阴极材料内发射电子的补充效率,增强了阴极组件的电子发射能力.当光电阴极组件为400℃时,其发射电流可达到89.69 mA.由于阴极表面不存在激活原子,在光电阴极组件连续144 h的寿命试验中,阴极的发射电流为4.5±0.3 mA,阴极发射性能并未出现明显衰减.真空沟道是光电阴极组件电子发射的主要区域,通过改善真空沟道结构参数可以直接调整阴极组件发射电子束的形状,增强大电流密度光电阴极在真空电子器件和设备中的适用性.     

纳米Pr6O11粉末掺杂MgB2超导电性研究

本文采用固相反应法制备了一系列纳米Pr6O11掺杂的MgB2超导块材,掺杂量分别为0,1,3,5,10wt.%.X射线衍射结果表明:随着Pr6O11掺杂量的增加,MgB2的晶格常数也逐渐增大,也就是说Pr原子部分替代了MgB2晶格中的Mg原子.磁测量结果显示,Pr6O11的掺杂对MgB2的超导转变温度(Tc)有很小的抑制.在低含量Pr6O11掺杂(1wt.%)时,MgB2的临界电流密度(Jc)和不可逆场(Hirr)均有明显的提高,但进一步提高Pr6O11的掺杂量时,会损害MgB2在高场下的性能.文中同时也讨论了Pr6O11掺杂影响MgB2的Tc和Jc性能的机理.     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.