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1.
Optical Tamm (OT) modes formed at the interface of distributed-Bragg reflector (DBR) and low-index dielectric material, exhibit strong dispersive features at optical frequencies which gives rise to the possibility of designing refractometer with improved sensitivity. Using this idea, we design a TiO2/SiO2 based DBR configuration for sensing refractive-index changes around 1.33 using spectral-interrogation as well as angular-interrogation method. Dispersion characteristics of OT modes in the DBR configuration are tailored to obtain spectral sensitivity ∼1200 nm/RIU and angular sensitivity ∼40°/RIU for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. We also show that the sensitivity could be substantially tuned over a wide range by appropriately choosing the thicknesses of DBR constituent layer. An all-dielectric DBR configuration gives rise to the possibility of realizing refractometer in any desired spectral region by linearly translating the dispersive behavior of photonic bandgap (PBG) guided OT modes.  相似文献   

2.
Carbon multi-wall nanotubes (MWNTs) were grown on a lithium niobate (LiNbO3) pyroelectric detector with a nickel film as the catalyst by hot-wire chemical vapor deposition (HWCVD). Two detectors are documented, each with slightly different deposition conditions. The absolute spectral responsivity of each device was measured from 600 nm to 1800 nm and indicates that the MWNT-coating absorptance is spectrally uniform, with variations of only a few percent. We also discuss growth of MWNTs on LiTaO3 by CVD and the limitations presented by the Curie temperature of the pyroelectric material.  相似文献   

3.
The electrical conductivity of single crystal lithium niobate (LiNbO3) was determined as a function of temperature for various oxygen partial pressures. The electrical conductivity is proportional to Po2−1/4 which can be explained by a defect equilibrium involving singly ionized oxygen vacancies and electrons.

Measurements of electrical transport numbers at 1000°K show the electrical conductivity of LiNbO3 to be ionic at one atmosphere of oxygen and electronic at low oxygen partial pressures.

Thermoelectric measurements indicate that LiNbO3 at low oxygen partial pressures is n-type and that the concentration of electrons at 1000°K and in an atmosphere of 50% C0/50% CO2a is 4 × 1017cm3 with a mobility of 1.7 cm2V sec.

The diffusion of oxygen in LiNbO3 was determined as a function of temperature at an oxygen partial pressure of 70 Torr. by measuring O18/O16 isotope exchange with the gas phase as a function of time. The diffusion data may be represented by D = 3.03 × 10−6 exp (−29.4 kcal mole−1/RT)cm2sec. Consideration of the Nernst-Einstein relation for oxygen and the variation in conductivity with Li2O activity indicate that the ionic conduction is caused by transport of lithium ions.  相似文献   


4.
Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO3 substrates by reactive rf magnetron sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly c-axis AlN films on z-cut LiNbO3 substrates, were investigated. The phase velocity (VP) was significantly increased by the increase of h/λ, where h is the thickness of AlN film and λ is the wavelength. However, the insertion loss (IL) of SAW filters was also increased by the increase of h/λ. Experimental results on the temperature characteristics of SAW devices are also presented.  相似文献   

5.
Colin J.R. Sheppard  Kieran G. Larkin   《Optik》2003,113(12):548-550
In this paper we report experimental studies of nonvolatilephotorefractive holographic recording in doping In(3mol%), which exceed the so-called threshold, in Ce:Cu:LiNbO3 crystals. The In:Ce:Cu:LiNbO3 crystal was grown by the Czochralski method and oxidized. The OH absorption band of In:Ce:Cu:LiNbO3 crystal is 3507cm−1. The nonvolatile holographic recording in In:Ce:Cu:LiNbO3crystal is realized by two-photon fixed method. From the experiment, we found that the recording time of In:Ce:Cu:LiNbO3 crystal is lower than that of Ce:Cu:LiNbO3 crystal and there are a little lose of nonvolatile diffraction efficiencies between In:Ce:Cu:LiNbO3 and Ce:Cu:LiNbO3 crystals. In this paper, the mechanism of OH absorption band shifting and two-photon fixed was discussed, too.  相似文献   

6.
Thin films of lithium tantalate have been derived on SiO2/Si substrate by sol-gel method. The sol is prepared by mixing LiOC2H5 and Ta(OC2H5)5. The film is deposited by spincoating and annealing at 600°C. The film is characterized by means of X-ray diffraction, atomic force microscopy,and the m-line technique.The experimental results show that the film has crystallized into the pure trigonal phase and it is microsopically continuous and uniform. The crystalline size ranges from about 33nm to 96nm. The refractive index of the film is measured to be 1.84 at the wavelength of 633nm and the film is found to support several guiding modes at this wavelength.  相似文献   

7.
Tianqi Li 《中国物理 B》2022,31(12):124208-124208
An aluminum (Al) based nearly guided-wave surface plasmon resonance (NGWSPR) sensor is investigated in the far-ultraviolet (FUV) region. By simultaneously optimizing the thickness of Al and dielectric films, the sensitivity of the optimized Al-based FUV-NGWSPR sensor increases from 183°/RIU to 309°/RIU, and its figure of merit rises from 26.47 RIU-1 to 32.59 RIU-1 when the refractive index of dielectric increases from 2 to 5. Compared with a traditional FUV-SPR sensor without dielectric, the optimized FUV-NGWSPR sensor can realize simultaneous improvement of sensitivity and figure of merit. In addition, the FUV-NGWSPR sensor with realistic materials (diamond, Ta2O5, and GaN) is also investigated, and 137.84%, 52.70%, and 41.89% sensitivity improvements are achieved respectively. This work proposes a method for performance improvement of FUV-SPR sensors by exciting nearly guided-wave, and could be helpful for the high-performance SPR sensor in the short-wavelength region.  相似文献   

8.
The crosstalk of electrodes on lithium niobate (LiNbO3) Mach-Zehnder interferometers was studied. Three specific electrode configurations—Z-cut twin-electrode, Y-cut twin-electrode, and Y-cut tri-electrode—were analyzed. The capacitive coupling coefficient between electrodes was calculated by the method of moment and measured by an impedance analyzer. A scaled-up experimental setup was used to measure this coupling coefficient. The experimental data show good agreement with the numerical results. From the results, it was found that the coupling coefficient on Z-cut substrate with symmetric twin-electrode is larger than that of Y-cut substrate using twin- and tri-electrodes. In the case of asymmetric electrodes, however, the crosstalk between electrodes becomes smaller as the electrode width is increased.  相似文献   

9.
陈棋  尚学府  张鹏  徐鹏  王淼  今西誠之 《物理学报》2017,66(18):188201-188201
以溶胶凝胶法合成的高纯Li_(1.4)Al_(0.4)Ti_(1.6)(PO_4)_3(LATP)纳米晶体粉末为原料,通过流延法成膜,在950℃下煅烧5 h合成LATP固态电解质片;对其进行环氧树脂改性后,能量色散X射线光谱元素图像表明环氧树脂完全浸入LATP内部,可以有效防止水渗透.研究发现流延法合成的LATP固态电解质在25℃?C时电导率高达8.70×10~(-4)S·cm~(-1)、活化能为0.36 eV、相对密度为89.5%.经过环氧树脂改性后电导率仍高达3.35×10-4S·cm-1、活化能为0.34 e V、相对密度为93.0%.高电导隔水的环氧树脂改性LATP固态电解质可作为锂金属保护薄膜用于新型高比容量电池.  相似文献   

10.
从实验中观察到,低能离子轰击后的铌酸锂晶体表面层在3500—6500?之间出现至少两个光吸收峰,表面的相对暗电导率增加两个数量级。这表明离子轰击后的铌酸锂中产生了附加的光吸收和电导激活中心。在离子轰击过程中,由于某些原子基团和原子的优先溅射,在表面层中造成相当大的化学计量比偏离,它直接影响晶体的光学和电学性质。XPS(X射线电子能谱)测试结果证实,这一表面层的构成符合铌酸锂缺陷结构的空位模型。讨论了附加激活中心的成因,并据此解释了Ar+/O+混合离子轰击铌酸锂晶体所得到的结果。 关键词:  相似文献   

11.
辛成舟  马健男  马静  南策文 《物理学报》2018,67(15):157502-157502
选用多种切型铌酸锂(LiNbO_3)单晶,研究了铁基非晶合金(Metglas)/LiNbO_3叠层复合材料基于伸缩-剪切模式的磁电耦合性能,揭示了铌酸锂单晶压电系数与复合材料剪切磁电耦合系数的对应关系,在使用铌酸锂xzt/30~?切型时得到了最优化剪切磁电系数.通过SrFe12O19薄磁带提供偏置磁场,Metglas/LiNbO_3磁电复合材料可在没有外加直流磁场时实现剪切磁电响应,并在0.991 MHz和3.51 MHz频率时分别测出了谐振磁电系数,有望将铌酸锂基剪切磁电复合材料用于高频磁场探测.  相似文献   

12.
We report studies of the modifications induced inside lithium niobate and KDP crystals by Yb:KGW ultrafast laser pulses, having 300-fs pulse duration and operating at 100-kHz repetition rate. By focusing the laser beam with a 0.42 numerical-aperture objective, we have recorded homogeneous volume Bragg gratings in the bulk of the niobate crystal that showed excellent diffraction efficiencies, reaching up to 87%, and remained permanent after thermal annealing for one hour at 150°C. The refractive index modification level was found to be 0.002 in lithium niobate. The results show that lithium niobate is a very promising crystal candidate for microphotonics applications. On the contrary, in the KDP crystal no smoothly modified refractive index zones were created.  相似文献   

13.
过低的灵敏度性能一直是声表面波(SAW)陀螺仪的瓶颈问题,对此,提出了一种结合金属点阵用以改善陀螺效应的新型行波模式SAW陀螺仪,并对其性能进行了评价。该结构由双延迟线型振荡器构成,两延迟线平行且反向制作于同一压电基片上,在延迟线的声传播路径上分布铜点阵。结合层状介质中声波传输特性的研究方法分析了两种压电晶体材料、不同金属点阵膜厚对传感器响应的影响,从而为确定陀螺仪的设计奠定理论基础。基于理论计算结果,研制了以128°YX LiNbO3及X-112°Y LiTaO3为压电基片,铜点阵厚度分别为33000 Å,6000 Å,9000 Å的95 MHz声表面波陀螺仪。为改善振荡器的频率稳定性,延迟线采用了具有梳状结构的单相单向换能器结构。振荡器的测试频率稳定度达到了±5 Hz/h。利用精确速率转台对所研制的SAW陀螺仪性能进行了测试。测试结果表明:采用机电耦合系数较高的128°YX LiNbO3基片并增加金属点阵厚度均能有效提高陀螺仪的检测灵敏度,所获得的最大检测灵敏度为2.7 Hz/(deg/s)。   相似文献   

14.
陈雪颖  徐金宝  边亮  王磊  熊信谦  高博 《物理学报》2013,62(19):198104-198104
锰钴镍复合氧化物是一种具有半导体性质的热敏材料. 本文采用金属有机沉积技术于室温条件下、在Si衬底上沉积一定 厚度的Mn1.74Co0.72Ni0.54O4金属 有机化合物薄膜, 并通过醇热反应进行低温结晶化合成, 可得到Mn1.74Co0.72Ni0.54O4结晶薄膜. 通过X 射线衍射、场发射扫描电子显微镜 (FESEM) 以及阻温特性等测试方法表征, 讨论了醇热反应对锰钴镍热敏薄膜的物相结构、微观形貌以及电学性能的影响. X射线衍射图显示薄膜已出现尖晶石结构的特征峰. 电镜照片说明结晶薄膜的表面较为平整、孔隙率低. 阻温特性关系表明薄膜具有明显的负温度系数效应, 室温(≈27°) 电阻率约为303.13 Ω·cm. 关键词: 醇热反应 锰钴镍薄膜 热敏电阻 低温合成  相似文献   

15.
《Ultrasonics》2013,53(1):185-190
Lithium niobate piezocomposites have been investigated as the active element in high temperature resistant ultrasonic transducers for non-destructive testing applications up to 400 °C. Compared to a single piece of lithium niobate crystal they demonstrate shorter pulse length by 3×, elimination of lateral modes, and resistance to cracking. In a 1–3 connectivity piezocomposite for high temperature use (200–400 °C), lithium niobate pillars are embedded in a matrix of flexible high temperature sealant or high temperature cement.In order to better understand the design principles and constraints for use of lithium niobate in piezocomposites experiments and modelling have been carried out. For this work the lithium niobate piezocomposites were investigated at room temperature so epoxy filler was used. 1–3 connectivity piezocomposite samples were prepared with z-cut lithium niobate, pillar width 0.3–0.6 mm, sample thickness 1–4 mm, pillar aspect ratio (pillar height/width) 3–6, volume fraction 30 and 45%. Operating frequency was 1–2 MHz.Experimental measurements of impedance magnitude and resonance frequency were compared with 3-D finite element modelling using PZFlex. Resonance frequencies were predicted within 0.05 MHz and impedance magnitude within 2–5% for samples with pillar aspect ratio ⩾3 for 45% volume fraction and pillar aspect ratio ⩾6 for 30% volume fraction. Laser vibrometry of pulse excitation of piezocomposite samples in air showed that the lithium niobate pillars and the epoxy filler moved in phase. Experiment and simulation showed that the thickness mode coupling coefficient kt of the piezocomposite was maintained at the lithium niobate bulk value of approximately 0.2 down to a volume fraction of 30%, consistent with calculations using the (Smith and Auld, 1991 [1]) model for piezocomposites.  相似文献   

16.
朱慧群  李毅  叶伟杰  李春波 《物理学报》2014,63(23):238101-238101
为解决掺杂引起的二氧化钒薄膜的红外调制幅度下降以及二氧化钒复合薄膜相变温度需要进一步降低等问题, 采用纳米结构、掺杂改性和复合结构等多种机理协同作用的方案, 利用共溅射氧化法, 先在石英玻璃上制备高(002)取向的ZnO薄膜, 再在ZnO层上室温共溅射沉积钒钨金属薄膜, 最后经热氧化处理获得双层钨掺杂W-VO2/ZnO纳米复合薄膜. 利用X射线衍射、X射线光电子能谱、扫描电镜和变温光谱分析等对薄膜的结构、组分、形貌和光学特性进行了分析. 结果显示, W-VO2/ZnO 纳米复合薄膜呈花状结构, 取向性提高, 在保持掺杂薄膜相变温度(约39 ℃)和热滞回线宽度(约6 ℃)较低的情况下, 其相变前后的红外透过率差量增加近2倍, 热致变色性能得到协同增强. 关键词: 2')" href="#">VO2 ZnO W掺杂 热致变色  相似文献   

17.
吴圣钰  张耘  柏红梅  梁金玲 《物理学报》2018,67(18):184209-184209
利用基于密度泛函的第一性原理的计算方法,研究了Co单掺及Co和Zn共掺LiNbO_3晶体的电子结构和吸收光谱.研究显示,各掺杂体系铌酸锂晶体的带隙均较纯铌酸锂晶体变窄. Co:LiNbO_3晶体禁带宽度为3.32 eV; Co:Zn:LiNbO_3晶体, Zn的浓度低于阈值或达到阈值时,禁带宽度分别为2.87或2.75 eV. Co:LiNbO_3晶体在可见-近红外光波段2.40, 1.58, 1.10 eV处形成吸收峰,这些峰归结于Co 3d分裂轨道的跃迁;加入抗光折变离子Zn~(2+),在1.58, 1.10 eV处的吸收峰增强,可以认为Zn~(2+)与Co~(2+)之间存在电荷转移,使e_g轨道电子减少,但并不影响t_(2g)轨道电子.结果表明,晶体中的Co离子在不同共掺离子下可充当深能级中心(2.40 eV),或可充当浅能级中心(1.58 eV),两种情况下,掺入近阈值的Zn离子均有助于实现优化存储.  相似文献   

18.
A series of near-stoichiometric Zn:Fe:LiNbO3 crystals were grown by the high-temperature top-seed solution growth (HTTSSG) method from stoichiometric melts doped with 6 mol% K2O. Infrared (IR) transmission spectra were measured and discussed in terms of the defect structure of the near-stoichiometric Zn:Fe:LiNbO3 crystals. The results of the transmitted beam pattern distortion method show that the optical damage resistance of the near-stoichiometric Zn:Fe:LiNbO3 crystals increases rapidly when the ZnO concentration exceeds a threshold value. The threshold value concentration of ZnO of the near-stoichiometric Zn:Fe:LiNbO3 crystals is much lower than that of the congruent LiNbO3 crystals. The dependence of the optical damage resistance on the defect structure of the near-stoichiometric Zn:Fe:LiNbO3 crystals are discussed, and the holographic recording properties of the near-stoichiometric Zn:Fe:LiNbO3 crystals are investigated.  相似文献   

19.
Iron-doped X-cut lithium niobate crystals were prepared by means of thermal diffusion from thin film varying in a systematic way the process parameters such as temperature and diffusion duration. Secondary Ion Mass Spectrometry was exploited to characterize the iron in-depth profiles. The evolution of the composition of the Fe thin film in the range between 600°C and 800°C was studied, and the diffusion coefficient at different temperatures in the range between 900°C and 1050°C and the activation energy of the diffusion process were estimated.  相似文献   

20.
蓝宝石R面上ZnO薄膜的NH3掺杂研究   总被引:3,自引:1,他引:2  
以NH3为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH3流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。  相似文献   

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