电化学析氢反应中单层MoSe2氢吸附机理第一性原理研究

基于密度泛函理论的第一性原理方法,本文计算了单层2H相MoSe₂纳米材料表面及两种边缘（Mo原子边缘、Se原子边缘）不同活性位点、不同氢原子吸附率下的氢吸附吉布斯自由能（Gibbs free energy,用△G_H⁰表示）,并且将对应的微观结构进行了系统分析比较,得出△G_H⁰最接近于0 eV的吸附位点及相应的吸附率.同时,结合差分电荷密度和电负性理论,分析了单层MoSe₂两种边缘氢吸附的电荷转移及成键特性,进一步解释了不同吸附位点呈现的结构与能量趋势.最后,通过基于密度泛函理论的第一性原理分子动力学模拟,研究了高温热运动对两种边缘氢吸附的影响,获得了氢原子发生脱附的临界温度及对应的微观动态过程.该理论研究从原子尺度揭示了单层2H相MoSe₂纳米材料边缘不同位点在不同温度下对氢原子吸附和脱附的微观机理,证实了Mo原子边缘的畸变和重构行为,加深了对实验中单层2H相MoSe₂边缘在不同温度下氢吸附机理的理解,为实验中通过控制MoSe₂边缘设计廉价高效的析氢催化剂提供理论参考.     

Role of graphene in improving catalytic behaviors of AuNPs/MoS2/Gr/Ni-F structure in hydrogen evolution reaction

The efficient production of hydrogen through electrocatalytic decomposition of water has broad prospects in modern energy equipment. However, the catalytic efficiency and durability of hydrogen evolution catalyst are still very deficient, which need to be further explored. Here in this work, we prove that introducing a graphene layer (Gr) between the molybdenum disulfide and nickel foam (Ni-F) substrate can greatly improve the catalytic performance of the hybrid. Owing to the excitation of local surface plasmon resonance (LSPR) of gold nanoparticles (NPs), the electrocatalytic hydrogen releasing activity of the MoS₂/Gr/Ni-F heterostructure is greatly improved. This results in a significant increase in the current density of AuNPs/MoS₂/Gr/Ni-F composite material under light irradiation and in the dark at 0.2 V (versus reversible hydrogen electrode (RHE)), which is much better than in MoS₂/Gr/Ni-F composite materials. The enhancement of hydrogen release can be attributed to the injection of hot electrons into MoS₂/Gr/Ni-F by AuNPs, which will improve the electron density of MoS₂/Gr/Ni-F, promote the reduction of H₂O, and further reduce the activation energy of the electrocatalyst hydrogen evolution reaction (HER). We also prove that the introduction of graphene can improve its stability in acidic catalytic environments. This work provides a new way of designing efficient water splitting system.     

金衬底调控单层二硫化钼电子性能的第一性原理研究

基于密度泛函的第一性原理研究了金衬底对单层二硫化钼电子性能的调控作用. 从结合能、能带结构、电子态密度和差分电荷密度四个方面进行了深入研究. 结合能计算确定了硫原子层在界面的排布方式, 并指出这种吸附结构并不稳定. 能带结构分析证实了金衬底与单层二硫化钼形成肖特基接触, 并出现钉扎效应. 电子态密度分析表明金衬底并没有影响硫原子和钼原子之间的共价键, 而是通过调控单层二硫化钼的电子态密度增加其导电率. 差分电荷密度分析表明单层二硫化钼的导电通道可能在界面处产生. 研究结果可对单层二硫化钼晶体管的建模和实验制备提供指导.     

Li掺杂少层MoS2的电荷分布及与石墨和氮化硼片的比较

基于第一性原理计算, 研究了Li掺杂的少层(1-3层) MoS₂的电荷分布, 并与石墨片和BN片的电荷分布特征进行了比较. 与石墨片和BN片相同的是: 电荷转移的大部分只发生在Li与最靠近Li的第一层MoS₂之间. 然而, 第二层和第三层MoS₂也能获得10%的转移电荷, 而石墨片和BN片的第二层和第三层得不到2%的电荷. 结合静电能和功函数的分析可知, MoS₂、石墨片和BN片的电荷分布主要由层间的静电相互作用和功函数来决定. 这些研究结果对于揭示具有多层结构的电荷分布特征及其电子器件的设计提供了理论支持.     

Core level spectroscopy of MoS2

X-ray photoelectron spectroscopy has been used to study mineral molybdenite, MoS₂. The fitted core level spectra of sulphur 2p and molybdenum 3d states reveal several photon energy sensitive components. The high binding energy component in both spectra is proposed to originate from the uppermost sulphur or molybdenum atoms of an S–Mo–S sandwich layer of the hexagonal structure, respectively. The other features are suggested to be caused by the edge structures formed during the sample cleavage. The edge facets have much stronger chemical properties than the basal planes and they are known as the active sites of MoS₂ when it is used as a catalyst. The spectral features and the effect of the structure of UHV cleaved MoS₂ on them are discussed.     

石墨烯封装单层二硫化钼的热稳定性研究

将单层二硫化钼用石墨烯进行封装,构造了石墨烯和二硫化钼的范德瓦耳斯异质结构,并且分别在氩气（Ar）和氢气（H₂）氛围下,详细研究了被封装的二硫化钼的热稳定性.结果表明：在氩气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直保持稳定,而石墨烯和氧化硅上裸露的二硫化钼在1000℃时几乎全部分解;在氢气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直稳定存在,而石墨烯和氧化硅上裸露的二硫化钼在800℃下已经完全分解.综上可得,在氩气和氢气的氛围下,被石墨烯封装的二硫化钼的热稳定性得到了显著的提高.该研究通过用石墨烯将单层的二硫化钼进行封装以提高其热稳定性,在未来以单层二硫化钼作为基础材料的电子器件中,可以保证其在高温下能够正常工作.该研究也为提高其他二维材料的热稳定性提供了一种可行的方法和思路.     

层状二硫化钼研究进展

近年来,层状二硫化钼由于其特殊的类石墨烯结构和独特的物理化学性质已成为国内外研究的热点.本文综述了层状二硫化钼的物理结构、价带结构和光学性质;介绍了制备方法,包括生长制备和剥离制备.生长制备的原料包括四硫代钼酸铵((NH4)_2MoS_4)、钼(Mo)和三氧化钼(MoO_3)等.剥离制备包括微机械剥离、液相超声法、锂离子插层法和电化学锂离子插层法等.归纳了层状二硫化钼在场效应晶体管、传感器和存储方面的应用,展望了层状二硫化钼的研究前景.     

酞菁铜与MoS_2(0001)范德瓦耳斯异质结研究

利用光电子能谱、原子力显微镜以及低能电子衍射等表面研究手段系统研究了真空沉积生长的酞菁铜薄膜与衬底MoS2(0001)之间的范德瓦耳斯异质结界面电子结构和几何结构.角分辨光电子能谱清楚地再现了MoS2(0001)衬底在Γ点附近的能带结构.低能电子衍射结果表明,CuPc薄膜在MoS2(0001)表面沿着衬底表面[11ˉ20],[1ˉ210]和[ˉ2110]三个晶向有序生长,反映了衬底对CuPc的影响.原子力显微镜结果表明,CuPc在MoS2衬底上遵循层状-岛状生长模式:在低生长厚度下(单层薄膜厚度约为0.3 nm),CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜;在较高的沉积厚度下,CuPc沿衬底晶向形成棒状晶粒,表现出明显的各向异性.光电子能谱显示界面偶极层为0.07 eV,而且能谱在膜厚1.2 nm饱和,揭示了酞菁铜与MoS2(0001)范德瓦耳斯异质结的能级结构.     

Pillar effects in MoS2 catalysts supported on Al and Zr pillared clays in a hydrotreatment reaction: A preliminary study

Molybdenum (Mo) supported on aluminum-pillared clay (Al-PILC) and zirconium-pillared clay (Zr-PILC) with contents of 0.6, 1.4 and 2.8 atoms of Mo/nm² were prepared and tested in the hydrogenation (HYD) of naphthalene (NP). It was found that the molybdenum sulfide (MoS₂) catalysts supported on Zr- pillared clays were more active than the samples supported on Al-pillared clays and catalysts supported on alumina. The catalysts were characterized by X-ray diffraction (XRD), thermogravimetric analysis, nitrogen adsorption and transmission electron microscopy (TEM). Characterization analysis clearly pointed out to a close interaction of MoS₂ with ZrO₂ in the pillared clays. Therefore, the highest hydrogenation activities can be related to the presence of an interaction of MoS₂ with ZrO₂, probably with a different electronic interaction between the active phase and the support, than that reported for the MoS₂/Al₂O₃ system.     

Large magnetocaloric effect in van der Waals crystal CrBr3

We study the magnetocaloric effect (MCE) in van der Waals (vdW) crystal CrBr₃. Bulk CrBr₃ exhibits a second-order paramagnetic-ferromagnetic phase transition with T_C = 33 K. The maximum magnetic entropy change −ΔS_M near T_C is about 7.2 J·kg⁻¹·K⁻¹ with the maximum adiabatic temperature change ΔT^max_ad = 2.37 K and the relative cooling power RCP= 191.5 J·kg⁻¹ at μ₀H = 5 T, all of which are remarkably larger than those in CrI₃. These results suggest that the vdW crystal CrBr₃ is a promising candidate for the low-dimensional magnetic refrigeration in low temperature region.     

二硫化钼/石墨烯异质结的界面结合作用及其对带边电位影响的理论研究

采用基于色散修正的平面波超软赝势方法研究了二硫化钼/石墨烯异质结的界面结合作用及其对电荷分布和带边电位的影响.研究表明二硫化钼与石墨烯之间可以形成范德瓦耳斯力结合的稳定堆叠结构.通过能带结构计算,发现二硫化钼与石墨烯的耦合导致二硫化钼成为n型半导体,石墨烯转变成小带隙的p型体系.并通过电子密度差分图证实了界面内二硫化钼附近聚集负电荷,石墨烯附近聚集正电荷,界面内形成的内建电场可以抑制光生电子-空穴对的复合.石墨烯的引入可以调制二硫化钼的能带,使其导带底上移至-0.31 eV,提高了光生电子还原能力,有利于光催化还原反应.     

层数变化对堆叠生长的MoS_(2(1-x))Se_(2x)电子结构的影响

二维过渡金属硫化物因其独特的光电特性在多功能光电器件方面具有广泛的应用前景.为了进一步拓展其在微纳光电子器件方面的应用范围,并提高器件性能,人们开展了通过合金手段改变端组分材料配比实现对二维半导体材料带隙调控的带隙工程以及调控生长条件改变材料形貌和结构的缺陷工程研究.本文利用光学、原子力和扫描电子显微镜等设备以及拉曼和光致发光光谱等手段对由化学气相沉积法生长出来的堆叠状MoS_(2(1-x))Se_(2x)合金的性质进行了研究.不同于大多数单层或少层MoS_(2(1-x))Se_(2x)合金的情况,堆叠生长的阶梯状MoS_(2(1-x))Se_(2x)合金材料在厚度从2.2 nm (约3层)一直增加到5.6 nm (约7层)时都显出了较强的发光特性,甚至在100 nm厚时,样品的发光谱线仍具有两个发光峰.两个激子发光峰分别来源于自旋轨道耦合造成的价带劈裂.随着厚度的增加,两个峰都逐渐红移,显示了合金掺杂时的能带弯曲效应.拉曼光谱给出了类MoS_2和类MoSe_2两套振动模.随着厚度的增加,拉曼峰位几乎不移动,但面内的两个振动模E_(2g(Mo-Se))和E_(2g(Mo-s))逐渐显现并增强.显然缺陷和应力是影响堆叠生长MoS_(2(1-x))Se_(2x)合金样品电子结构的主要因素,这为特殊功能器件的制备和可控缺陷工程的研究提供了有益的参考.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

掺杂对金属-MoS_2界面性质调制的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波方法,计算了卤族元素掺杂对金属-MoS_2界面性质的影响,包括缺陷形成能、电子能带结构、差分电荷密度以及电荷布居分布.计算结果表明:卤族元素原子倾向于占据单层MoS_2表面的S原子位置;对于单层MoS_2而言,卤族元素的掺杂将在禁带中引入杂质能级以及导致费米能级位置的移动.对于金属-MoS_2界面体系,结合Schottky-Mott模型,证明了卤族元素的掺杂可以有效地调制金属-MoS_2界面间的肖特基势垒高度.发现F和Cl原子的掺杂将会降低体系的肖特基势垒高度.相比之下,Br和I原子的掺杂却增大了体系的肖特基势垒高度.通过差分电荷密度和布居分布的分析,阐明了肖特基势垒高度的被调制是因为电荷转移形成的界面偶极矩的作用导致.研究结果解释了相关实验现象,并给二维材料的器件化应用提供了调节手段.     

The rise of two-dimensional MoS2 for catalysis

Two-dimensional (2D) MoS₂ is used as a catalyst or support and has received increased research interest because of its superior structural and electronic properties compared with those of bulk structures. In this article, we illustrate the active sites of 2D MoS₂ and various strategies for enhancing its intrinsic catalytic activity. The recent advances in the use of 2D MoS₂-based materials for applications such as thermocatalysis, electrocatalysis, and photocatalysis are discussed. We also discuss the future opportunities and challenges for 2D MoS₂-based materials, in both fundamental research and industrial applications.     

Enhanced photoluminescence of monolayer MoS2 on stepped gold structure

Different MoS₂/Au heterostructures can play an important role in tuning the photoluminescence (PL) and optoelectrical properties of monolayer MoS₂. Previous studies of PL of MoS₂/Au heterostructures were mainly limited to the PL enhancement by using different Au nanostructures and PL quenching of monolayer MoS₂ on flat Au surfaces. Here, we demonstrate the enhanced excitonic PL emissions of monolayer MoS₂/Au heterostructures on Si/SiO₂ substrates. By transferring the continuous monolayer MoS₂ onto a stepped Au structure consisting of 60-nm and 100-nm Au films, the MoS₂/Au-60 and MoS₂/Au-100 heterostructures exhibit enhanced PL emissions, each with a blue-shifted PL peak in comparison with the MoS₂/SiO₂. Furthermore, the PL intensity of MoS₂/Au-60 is about twice larger than that of MoS₂/Au-100. The different enhanced excitonic PL emissions in MoS₂/Au heterostructures can be attributed to the different charge transfer effects modified by the stepped Au structure. This work may provide an insight into the excitonic PL and charge transfer effect of MoS₂ on Au film and yield novel phenomena in MoS₂/Au heterostructures for further study of PL tuning and optoelectrical properties.     

(Cu,N)共掺杂TiO2/MoS2异质结的电子和光学性能:杂化泛函HSE06

在密度泛函理论的基础上,系统地研究了Cu/N（共）掺杂的TiO₂/MoS₂异质结体系的几何结构、电子结构和光学性质.计算发现,TiO₂/MoS₂异质结的带隙相比于纯的TiO₂（101）表面明显变小,Cu/N（共）掺杂TiO₂/MoS₂异质结体系的禁带宽度也明显地减小,这导致光子激发能量的降低和光吸收能力的提高.通过计算Cu/N（共）掺杂TiO₂/MoS₂的差分电荷密度,发现光生电子与空穴积累在掺杂后的TiO₂（101）表面和单层MoS₂之间,这表明掺杂杂质体系可以有效地抑制光生电子-空穴对的复合.此外,我们计算了在不同压力下TiO₂/MoS₂异质结的几何、电子和光学性质,发现适当增加压力可以有效提高异质结的光吸收性能.本文结果表明,Cu/N（共）掺杂TiO₂/MoS₂异质结和对TiO₂/MoS₂异质结加压都能有效地提高材料的光学性能.     

Electronic properties of 2H-stacking bilayer MoS2 measured by terahertz time-domain spectroscopy

Bilayer (BL) molybdenum disulfide (MoS₂) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré superlattices. In this work, BL MoS₂ on sapphire substrate with 2H-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS₂. The optical conductivity of BL MoS₂ is obtained in temperature regime from 80 K to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS₂ can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS₂, BL MoS₂ with 2H-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS₂ differ from those observed for ML MoS₂. The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS₂ based twistronic systems for novel applications as optical and optoelectronic materials and devices.     

Topological Fulde–Ferrell and Larkin–Ovchinnikov states in spin-orbit-coupled lattice system

The spin-orbit coupled lattice system under Zeeman fields provides an ideal platform to realize exotic pairing states. Notable examples range from the topological superfluid/superconducting (tSC) state, which is gapped in the bulk but metallic at the edge, to the Fulde–Ferrell (FF) state (having a phase-modulated order parameter with a uniform amplitude) and the Larkin–Ovchinnikov (LO) state (having a spatially varying order parameter amplitude). Here, we show that the topological FF state with Chern number (C=−1) (tFF₁) and topological LO state with C= 2 (tLO₂) can be stabilized in Rashba spin-orbit coupled lattice systems in the presence of both in-plane and out-of-plane Zeeman fields. Besides the inhomogeneous tSC states, in the presence of a weak in-plane Zeeman field, two topological BCS phases may emerge with C=−1 (tBCS₁) far from half filling and C= 2 (tBCS₂) near half filling. We show intriguing effects such as different spatial profiles of order parameters for FF and LO states, the topological evolution among inhomogeneous tSC states, and different non-trivial Chern numbers for the tFF₁ and tLO_1,2 states, which are peculiar to the lattice system. Global phase diagrams for various topological phases are presented for both half-filling and doped cases. The edge states as well as local density of states spectra are calculated for tSC states in a 2D strip.     

一种简单的化学气相沉积法制备大尺寸单层二硫化钼

最近单层二硫化钼以其直接带隙的性质及在电子器件、催化、光电等领域中的潜在应用而备受关注.化学气相沉积法能够制备出高质量、大尺寸且性能优良的单层二硫化钼,但其制备工艺比较复杂.本文采用简化的化学气相沉积法在蓝宝石衬底上制备出了大尺寸的单晶二硫化钼.清洗衬底时,只需要简单的清洁,不需要用丙酮、食人鱼溶液(H_2SO_4/H_2O_2=3:1)等处理,这样既减少了操作步骤,又避免了潜在的危险.升温时直接从室温加热到生长的温度,不必分段升温,并且采用常压化学气相沉积法,不需要抽真空等过程,使得实验可以快捷方便地进行.光学显微镜、拉曼光谱和光致发光谱的结果表明,生长的二硫化钼为规则的三角形单层,边长为50μm左右,远大于机械剥离的样品.