High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

The impacts of HfO_x inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory(TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfO_x/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfO_x inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfO_x/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state(LRS) and Schottky emission in the high resistive state(HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole–Frenkel emission in the HRS.     

FeCo基纳米晶合金高温交换耦合作用机理

研究了500和600℃真空退火后的纳米晶Fe_38.4Co₄₀Si₉B₉Nb_2.6Cu合金初始磁导率随温度的变化规律,发现较高温度(600℃)退火的FeCo基纳米晶合金,在非晶相居里温度以上较宽温度范围内磁导率没有明显的衰减,这是在双相纳米晶合金中观察到的一种新现象,其磁特性不同于Fe基纳米晶合金.为了探明这种现象的起源,估算了与剩余非晶相同成分的非晶合金的居里温度及纳米晶粒间发生交换耦合作用的参数 关键词： 交换耦合作用 非晶相居里温度 交换耦合穿透深度     

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

In this letter,the Ta/HfO_x/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO_x/BN bilayer device compared with that for the Ta/HfO_x/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfO_x layer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO_x/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfO_x device.     

层状二硫化钼研究进展

近年来,层状二硫化钼由于其特殊的类石墨烯结构和独特的物理化学性质已成为国内外研究的热点.本文综述了层状二硫化钼的物理结构、价带结构和光学性质;介绍了制备方法,包括生长制备和剥离制备.生长制备的原料包括四硫代钼酸铵((NH4)_2MoS_4)、钼(Mo)和三氧化钼(MoO_3)等.剥离制备包括微机械剥离、液相超声法、锂离子插层法和电化学锂离子插层法等.归纳了层状二硫化钼在场效应晶体管、传感器和存储方面的应用,展望了层状二硫化钼的研究前景.