聚偏氟乙烯的等离子体处理和ESR研究

在外部电极电容耦合反应装置中对聚偏氟乙烯(PVF₂)表面进行等离子体放电处理,测量了等离子体处理后PVF₂凝胶量、剪切强度和表面接触角等参量值的变化,另外,用ESR技术对等离子体处理生成的自由基进行研究,指出等离子体作用后表面分子不饱和链的增加和自由基引发的交联反应与表面粘接性能的改善有关.     

低温等离子体对塑料表面处理——低温等离子体对高密度聚乙烯表面处理的ESR研究

本文研究了不同处理条件(处理功率、处理时间和处理压力)下等离子体气体(Ar、N₂、O₂和空气等)对高密度聚乙烯表面处理产生的自由基的ESR谱。我们观察到等离子体处理产生的自由基是相当稳定的,它的ESR信号强度随处理功率和处理时间增加而增加。但处理压力对它影响不大。我们证明了紫外线对高密度聚乙烯表面产生自由基作用随处理条件而变化。并初步解释了谱的超精细相互作用。     

等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理

利用感应耦合等离子体增强化学气相沉积法以Ar，He，N₂和B₂H₆为反应气体制备了高纯立方氮化硼薄膜.用四极质谱仪对等离子体状况进行了系统的分析，发现B₂H₆完全被电离而N₂只是部分被电离.H₂和过量的N₂在等离子体中生成大量中性的H原子和活化的N^*₂，它们与表面的相互作用严重地阻碍了立方 关键词： 立方氮化硼薄膜 等离子体 质谱     

等离子催化重整CH4/CO2中的协同效应及积碳动力学

本文采用实验测量和数值模拟结合的方法,对NSD等离子体–催化剂协同重整CH₄/CO₂过程中的协同效应以及积碳动力学进行研究。构建了包含中性分子、自由基、振动激发态、电子激发态、带电粒子、表面吸附态等物质在内的详细动力学机理。采用ZDPlasKin-CHEMKIN耦合的方法迭代求解等离子体放电过程、气相反应动力学及表面反应动力学在内的详细动力学机理。在300～700 K的温度范围内,该动力学模型能较好地预测反应物的消耗和产物的生成,路径通量分析表明CH₃在催化剂表面上的直接吸附反应以及CH₄振动激发态分子的吸附态CH₄(vs)在催化剂表面上的解离吸附均可促进吸附态CH₃(s)的生成。积碳动力学研究表明催化剂上的积碳主要来源于吸附态CH(s)的脱氢反应CH(s)+Ni(s)→C(s)+H(s)。     

激光诱导AlO自由基B2∑+–X2∑+跃迁光谱研究

基于激光诱导击穿光谱技术, 利用Nd:YAG脉冲激光激发Al₂O₃ (含量为99%)陶瓷片产生等离子体, 获得了AlO自由基B²∑⁺–X²∑⁺跃迁的33条发射谱线. 就AlO自由基光谱的时间演化规律和激光能量对谱线的影响规律进行了研究与分析. 结果表明, AlO自由基光谱出现在Al原子和Al离子光谱之后, 且持续时间较长. 当激光的脉冲能量由10 mJ起不断增加时, AlO自由基光谱强度逐渐减小, 且最大值出现时间随激光能量的增加而后移. 在此基础上, 进行了陶瓷等离子体在空气和氩气环境下的对比试验, 发现从Al₂O₃陶瓷片中激发所产生的AlO自由基必须有空气中O₂参与反应. 关键词： 激光诱导击穿光谱 AlO自由基 B²∑⁺–X²∑⁺跃迁光谱')" href="#">B²∑⁺–X²∑⁺跃迁光谱     

杭锦2#土的光谱特征及非均相Fenton反应机理

杭锦2#土是内蒙古鄂尔多斯杭锦旗地区发现的层状含铁天然矿物,利用Ｘ射线衍射、吡啶吸附红外光谱及Ｘ射线光电子能谱技术对样品的性质进行了表征。X射线光电子能谱表明杭锦2#土骨架结构中Si和Al原子结合能与标准硅氧四面体和铝氧八面体中Si和Al结合能相比明显增加,表面存在Lewis酸位和Brönsted酸位,且杭锦2#土中铁物种以Fe(Ⅲ)和Fe(Ⅱ)形式存在于骨架结构中;非均相Fenton反应中杭锦2#土的Fe(Ⅱ)可与H₂O₂反应生成自由基(·OH)与Fe(Ⅲ),但反应速率慢且难以循环。酸活化后杭锦2#土中Si和Al的结合能进一步增加,铁物种部分转变为非结构铁并以Fe3+与Fe2+转移到样品表面;X射线光电子能谱、吡啶红外和氨气程序升温表征表明酸活化杭锦2#土表面Lewis酸位和Brönsted酸位增多;非均相Fenton反应中,酸活化杭锦2#土表面Fe3+与Fe2+可与H₂O₂循环反应,不断生成·OH并对甲基橙进行降解,且活化杭锦2#土表面Brönsted酸能够提供质子将H₂O₂包围,抑制其分解生成HO-₂并提供更多的·OH,Lewis酸能增加杭锦2#土表面吸附氧（O_ad）含量,而Fe2+可被O_ad氧化为Fe3+,促进Fe2+/Fe3+之间的循环,同时在氧化过程中电子转移到O_ad形成O·-₂,O·-₂能够与Brönsted酸提供的质子反应形成·OH,·OH与O·-₂均为氧化性自由基,能够提升活化杭锦2#土非均相Fenton反应活性。此外,X射线衍射表明酸活化使杭锦2#土中CO2-₃转化为对Fenton反应负面影响更小的SO2-₄进而提升其非均相Fenton反应活性。     

等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响

使用等离子体活化硒源对电沉积制备的Cu-In-Ga金属预制层进行了硒化处理时, 发现等离子体功率对Cu(In_1-xGa_x)Se₂(CIGS)晶粒的生长有重要影响, 当等离子体功率为75 W时, 制备出单一Cu(In_0.7Ga_0.3)Se₂相的CIGS薄膜. 通过对不同衬底温度的等离子体活化硒源硒化的CIGS 薄膜进行了研究与分析, 并与普通硒化后的薄膜进行对比, 发现高活性硒在低温下会促进Ga-Se二元相的生成, 从而有利于Cu(In_0.7Ga_0.3)Se₂单相的生长. 对等离子体硒化后的CIGS薄膜进行了电池制备, 发现单相CIGS薄膜没有显著提高电池性能. 通过优化工艺, 所制备的CIGS电池效率达到了9.4%. 关键词： 0.7Ga_0.3)Se₂')" href="#">Cu(In_0.7Ga_0.3)Se₂ 电沉积 Cu-In-Ga金属预制层 等离子体活化硒     

AlGaN/GaN异质结Ni/Au肖特基表面处理及退火研究

采用O₂等离子体及HF溶液对AlGaN/GaN异质结材料进行表面处理后，Ni/Au肖特基接触特性比未处理有了明显改善，反向泄漏电流减小3个数量级.对制备的肖特基接触进行200—600℃ 5min的N₂气氛退火，发现退火冷却后肖特基反向泄漏电流随退火温度增大进一步减小.N₂气中600℃退火后肖特基二极管C-V特性曲线在不同频率下一致性变好，这表明退火中Ni向材料表面扩散减小了表面陷阱密度；C-V特性曲线随退火温度增大向右移动，从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高. 关键词： AlGaN/GaN 肖特基接触 表面处理 退火     

碱性介质电催化体系活性氧的生成及其光谱学研究

亚熔盐液相氧化技术可在相对低温下实现难分解两性金属矿物的高效转化,基于此进一步提出了碱性介质电化学活性氧协同强化新方法。利用紫外-可见光光谱和电子自旋共振波谱等手段对电催化体系活性氧的生成与转化机理进行了系统解析。通过阴极电催化的作用,在电极表面定向进行两电子氧气还原反应,原位产生大量的活性氧组分。研究发现过渡金属离子与两电子氧气还原产物HO-₂之间的“自诱发”效应,可生成具有更高氧化活性的羟基自由基,大幅促进两性金属转化过程,实现了碱性介质电化学高级氧化过程。利用紫外-可见光光谱检测到电化学体系活性氧催化氧化低价两性金属氧化物(Cr₂O₃和V₂O₃)的转化过程。与此同时,根据标准自由能变化的热力学数据计算可知,V₂O₃比Cr₂O₃更易在活性氧存在的条件下发生溶出反应。采用电子自旋共振波谱(ESR)对电催化体系内的羟基自由基进行检测,结果表明由V₂O₃引发的电化学-类Fenton反应激发产生的羟基自由基ESR信号比Cr₂O₃信号强。利用猝灭剂实验验证了具有高氧化电位的羟基自由基可以对两性金属液相氧化起到促进作用。该研究为碱性介质电化学矿物溶出实际反应提供理论参考。     

SeOx(x=1,2)的从头算势能曲线和光谱常数

采用从头算的多种方法和基组优化计算SeO_x(x=1,2)自由基的基态结构、谐振频率及离解能,优选出QCISD(T)/6-311+G(2df)、B3LYP/6-311G(3d2f)方法分别对SeO、SeO₂自由基进行计算,计算结果与实验结果吻合很好.对SeO自由基拟合出Murrell-Sorbie势能函数参数,计算出SeO自由基的光谱常数和力常数.计算出SeO₂自由基力常数,导出SeO₂自由基的多体展式势能函数,发现SeO₂自由基对称伸缩振动势能图中在对称的O+SeO→SeO₂反应通道上有一鞍点,其活化能约为48.24 kJ·mol^-1,O原子需要越过0.5 eV的能垒才能生成SeO₂的稳定结构.     

离子液体在大气压等离子体中稳定性研究

采用发射光谱、紫外可见吸收光谱、红外吸收光谱和核磁共振技术分析1-丁基-3-甲基咪唑硫酸氢盐（[Bmim]HSO₄）, 1-丁基吡啶硫酸氢盐（HSO₄）和1-丁基-3-甲基咪唑四氟化硼（[Bmim]BF₄）三种离子液体在大气压介质阻挡放电氩等离子体体系中的稳定性,并分别以上述三种离子液体为辅助液采用大气压介质阻挡放电等离子体技术制备TiO₂,进一步研究三种离子液体在等离子体中的稳定性对所制备的TiO₂晶相结构的影响。结果表明：向大气压介质阻挡放电氩等离子体中分别引入[Bmim]HSO₄,HSO₄和[Bmim]BF₄离子液体后并未改变氩等离子体放电光谱谱峰的位置和数量且没有新的谱峰生成,但谱峰强度都明显降低,说明上述三种离子液体没有在等离子体区蒸发形成激发态物种;[Bmim]HSO₄和HSO₄放电前后的红外吸收光谱基本一致,表明离子液体在放电后的化学键未发生改变;[Bmim]HSO₄和HSO₄的紫外可见吸收光谱显示其吸收峰的位置和强度未发生改变,说明两种离子液体在等离子体作用后的结构是稳定的;[Bmim]BF₄放电前后的红外吸收光谱各个特征峰并无明显差异,但其紫外可见吸收光谱图谱吸收峰的位置却发生较大的偏移,进一步对放电前后的[Bmim]BF₄离子液体进行核磁共振分析,两者的1H NMR峰数相同,但放电后的离子液体化学位移向高位偏移大约0.2单位,说明其化学环境发生了变化,表明有部分[Bmim]BF₄结构发生改变。光谱和核磁共振技术分析表明离子液体[Bmim]BF₄在等离子体作用后结构发生了改变。采用三种离子液体辅助大气压介质阻挡放电等离子体技术制备TiO₂样品的X-射线衍射分析结果表明 [Bmim]HSO₄和HSO₄辅助制备的HSO₄-TiO₂和[Bmim]HSO₄-TiO₂,谱图与锐钛矿相TiO₂标准谱图基本一致,表明所制备的TiO₂为纯锐钛矿型。而[Bmim]BF₄辅助制备的[Bmim]BF₄-TiO₂在2θ=24.1°处的衍射峰向小角度偏移,2θ=48°处的衍射峰向大角度偏移,说明[Bmim]BF₄在辅助制备TiO₂过程中,F进入TiO₂的晶格,破坏了TiO₂原子间的平衡状态,生成了F掺杂TiO₂光催化材料。F掺杂TiO₂光催化材料的形成也间接证明了离子液体[Bmim]BF₄在大气压等离子体中的不稳定性,此结果与核磁共振及紫外可见光的检测结果相一致。同时说明离子液体在等离子体的作用下对于纯锐钛矿晶格的形成和促进高活性掺杂型的光催化材料具有重要作用。为等离子体辅助离子液体制备高性能纳米材料提供重要的实验和理论依据。     

Plasma treatment of the Mg:Ag/tris-(8-hydroxyquinoline) aluminum interface in OLEDs: effects on adhesion and performance

The adhesion of a Mg:Ag cathode to the tris-(8-hydroxyquinoline) aluminum (Alq₃) in organic light emitting devices (OLEDs) can be greatly enhanced by a remote plasma treatment of the Alq₃ layer using either air or N₂ prior to metal deposition. The altered surface properties which lead to increased sticking coefficients of Mg and Ag, as well as enhanced adhesion, are attributed to the introduction of new functional groups into the organic layer, as observed by X-ray photoelectron spectroscopy (XPS). The storage life of the plasma treated devices in air without any capping treatment, as judged by a visible deterioration of the cathode, was increased by approximately five to six times compared to untreated OLEDs. Current–voltage characteristics and EL efficiency, however, were shown to deteriorate for devices incorporating either an air or an N₂ plasma treated Alq₃ layer. For OLEDs subjected to short treatment times with an N₂ plasma, only a very slight increase in the turn-on voltage, of about 0.2 V, was observed. An investigation of black spot formation revealed that an air plasma treatment resulted in a five-fold decrease in the time required for 50% of the device to become non-emissive. N₂ treated devices on the other hand, developed black spots at a comparable rate to the non-treated devices. Thus, a short N₂ plasma treatment of the Alq₃ layer prior to metal deposition improves the adhesion at the interface, thereby reducing the oxidation and degradation of the device through exposure to ambient conditions, particularly in storage.     

InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization

A multipolar plasma passivation scheme controlled by in-situ ellipsometry has been developed to produce a high electrical quality InGaAs/Si₃N₄ interface. We have demonstrated the possibility to remove all native oxides at the InGaAs surface by heating the sample at 240°C, then using the action of a multipolar H₂ plasma at 185°C, without optical degradation of the surface. The passivation by a native nitride layer is then performed using a N₂ plasma, and Si₃N₄ is deposited. The treatment induces a reduction of the density of interface states N_ss(E), and also a change of the nature of these interface states as shown by a reduction in the capture cross section σ_n(E).     

滑动弧裂解CO2机理

建立了一维滑动弧裂解CO₂的反应机理模型. 利用对流冷却的特征频率计算横向气流对流引起的等离子体组分损失. 将等离子体密度和温度的数值模拟结果与文献中滑动电弧等离子体反应器的实验数据进行了对比,吻合较好. 模拟结果表明,滑动弧裂解CO₂会产生大量O和O₂等活性助燃粒子以及可燃的CO. 随着对流冷却特征频率的增加,放电过程中最大电子数密度和电子温度减小,CO₂转化率下降. 在整个CO₂裂解机制中e+CO₂→e+CO+O的贡献最大,准稳态中贡献率为90.63%,瞬态中贡献率为98.43%. 反应CO+O+M→CO₂+M对CO₂生成的贡献率最大. 在实际应用中,为提高CO₂转化率,可以通过增大放电电流,增大e+CO₂→e+CO+O的反应速率,同时选择合适的气体流量,避免过大的速度引起CO₂转化率下降.      

Effects of surface treatments and annealing on carbon-based molecular sieve membranes for gas separation

A new method in preparing carbon-based molecular sieve (CMS) membranes for gas separation has been proposed. Carbon-based films are deposited on porous Al₂O₃ disks using hexamethyldisiloxane (HMDSO) by remote inductively coupled plasma (ICP) chemical vapor deposition (CVD). After treating the film with ion bombardment and subsequent pyrolysis at a high temperature, carbon-based molecule sieve membranes can be obtained, exhibiting a very high H₂/N₂ selectivity around 100 and an extremely high permeance of H₂ around 1.5 × 10⁻⁶ mol m⁻² s⁻¹ Pa⁻¹ at 298 K. The O₂/N₂ selectivity could reach 5.4 with the O₂ permeance of 2 × 10⁻⁷ mol m⁻² s⁻¹ Pa⁻¹ at 423 K.

During surface treatments, HMDSO ions were found to be more effective than CH₄, Ar, O₂ and N₂ ions to improve the selectivity and permeance. Short and optimized surface treatment periods were required for high efficiency. Without pyrolysis, surface treatments alone greatly reduced the H₂ and N₂ permeances and had no effect on the selectivity. Besides, without any surface treatment, pyrolysis alone greatly increased the H₂ and N₂ permeances, but had no improvement on the selectivity, owing to the creation of large pores by desorption of carbon. A combination of surface treatment and pyrolysis is necessary for simultaneously enhancing the permeance and the selectivity of CMS membranes, very different from the conventional pore-plugging mechanism in typical CVD.     

Soot elimination and NOx and SOx reduction indiesel-engine exhaust by a combination of discharge plasma and oildynamics

The soot in the exhaust gas from a 2-L diesel-engine car has been eliminated almost completely, independent of the load and cruising speed, by a plasma reactor mounted downstream of the engine exhaust and a novel technique using a combination of discharge plasma and oil dynamics. The NO_x (NO₂+NO) and SO_x components have also been reduced by about 70% at a rotational speed of 1200 rpm and a load of 7 kg-m, corresponding to about 60% of maximum torque (about 11.4 kg-m at 1200 rpm). The reduction rate of NO_x in this investigation is about 20% more efficient than ordinary treatment using a discharge plasma only     

等离子体放电活化生理盐水杀菌应用研究

等离子体中含有多种活性物种可实现高效安全杀菌,活性物种与生物体相互作用多在水环境下进行.因此等离子体与水的相互作用过程研究掀起了等离子体生物杀菌的新浪潮.本文采用水中阵列放电产生等离子体活化生理盐水,利用所产生的活化生理盐水对大肠杆菌开展了杀菌消毒研究,当等离子体放电时间达到120 s时产生的活化生理盐水与大肠杆菌混合后可使大肠杆菌的存活效率降至0.001%.通过紫外-可见吸收光谱测量及化学氧化还原沉降滴定表明放电电荷及激发态氧化性活性物种与水溶液相互作用,转化为活化生理盐水中长寿命相对稳定存在的H_2O_2和O_3等氧化性物种,与大肠杆菌作用并主导主要杀菌效果.     

Effects of fly ash on NOx removal by pulsed streamers

NO_x removal methods using plasma chemical reactions in nonthermal plasmas have been widely studied. In this paper, the effects of the addition of fly ash on NO_x removal using short-pulsed discharge plasmas are described. Fly ash which had been collected from a coal-burning thermal electrical power plant was used. Experiments were performed using four different mixtures of gases which included NO. These were (N₂+NO), (N₂+NO+O₂), (N₂+NO+H₂O), and (N₂+NO+O₂+H ₂O). These gas mixtures were used either with or without the addition of fly ash. The initial concentration of NO was fixed at 200 ppm (NO parts per million of the gas mixture), The study of the NO_x (NO+NO₂) removal was performed with the fly ash, as it is relevant to real situations in coal power plants. The results show that the presence of fly ash decreased the NO_x removal rate slightly in the case of dry gas mixtures while it increased the NO_x removal rate substantially in the case of wet gas mixtures. These results suggest that the presence of fly ash in the flue gases, which also contain a few percentages of moisture, would be advantageous to the treatment of flue gases emitted from thermal power plants for the removal of nitrogen oxides     

Synthesis of YBa2Cu3O7−x superconducting thin films on LaAlO3 by means of PAMOCVD

High-T_c superconducting thin films have been deposited in situ by means of a plasma assisted metal-organic chemical vapour deposition (PAMOCVD) process on LaAlO₃. An EMCORE high-speed rotating disc reactor was used to deposit the films at a substrate temperature of 600°C to 800°C. The system is equipped with a (remote) 120 W microwave plasma generator. The oxidising plasma gas is N₂O and/or O₂ while Ar was used as the inert carrier gas for the different metal-organics. The influence of different process parameters (such as the temperatures of the metal-organics, substrate temperature, and plasma gas composition) on the superconductive properties and on the morphology of the films was investigated. Surface morphology and composition were studied by SEM/EDX or EPMA, and AC susceptibility measurements were used to investigate the superconductive properties (T_c and J_c). X-ray diffraction measurements indicated that single-phase YBa₂Cu₃O_7−x films were epitaxially grown with the 00l orientation perpendicular to the substrate surface. The critical temperature (T_c) of the films is about 90 K and the critical current density (J_c) is higher than 10⁶ A/cm² at 77 K and zero field.