| 等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响 |
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| 引用本文： | 张超,敖建平,姜韬,孙国忠,周志强,孙云.等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响[J].物理学报,2013,62(7):78801-078801. |
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| 作者姓名： | 张超 敖建平 姜韬 孙国忠 周志强 孙云 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所, 天津市光电子薄膜器件与技术重点实验室, 光电信息技术科学教育部重点实验室, 天津 300071 |
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| 基金项目： | 高等学校博士学科点专项科研基金 (批准号: 20090031110031) 资助的课题. |
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| 摘 要： | 使用等离子体活化硒源对电沉积制备的Cu-In-Ga金属预制层进行了硒化处理时, 发现等离子体功率对Cu(In1-xGax)Se2(CIGS)晶粒的生长有重要影响, 当等离子体功率为75 W时, 制备出单一Cu(In0.7Ga0.3)Se2相的CIGS薄膜. 通过对不同衬底温度的等离子体活化硒源硒化的CIGS 薄膜进行了研究与分析, 并与普通硒化后的薄膜进行对比, 发现高活性硒在低温下会促进Ga-Se二元相的生成, 从而有利于Cu(In0.7Ga0.3)Se2单相的生长. 对等离子体硒化后的CIGS薄膜进行了电池制备, 发现单相CIGS薄膜没有显著提高电池性能. 通过优化工艺, 所制备的CIGS电池效率达到了9.4%.
关键词：
0.7Ga0.3)Se2')" href="#">Cu(In0.7Ga0.3)Se2
电沉积
Cu-In-Ga金属预制层
等离子体活化硒
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| 关 键 词： | Cu(In0.7Ga0.3)Se2 电沉积 Cu-In-Ga金属预制层 等离子体活化硒 |
| 收稿时间： | 2012-09-26 |
Influences of plasma activation Se source on selenization of electrodeposited Cu-In-Ga metallic precursors |
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| Zhang Chao,Ao Jian-Ping,Jiang Tao,Sun Guo-Zhong,Zhou Zhi-Qiang,Sun Yun.Influences of plasma activation Se source on selenization of electrodeposited Cu-In-Ga metallic precursors[J].Acta Physica Sinica,2013,62(7):78801-078801. |
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| Authors: | Zhang Chao Ao Jian-Ping Jiang Tao Sun Guo-Zhong Zhou Zhi-Qiang Sun Yun |
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| Institution: | Tianjin Key Laboratory of Photo-Electronic Thin FilmDevices and Technology, Institute of Photo-Electronic Thin FilmDevices and Technique, Nankai University, Key Laboratory of Optoelectronic Information Technology, Ministry of Education (Nankai University Tianjin University), Tianjin 300071, China |
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| Abstract: | In this paper, the electrodeposited Cu-In-Ga metallic precursors have been selenized by using plasma activation Se source. The power of plasma has great influence on the grain growth of Cu(In1-xGax)Se2(CIGS). The films were shown to be single phase Cu(In0.7Ga0.3)Se2 when the plasma power was 75W. And the fact that high activity Se promotes the generation of binary selenide phase at a low temperature, thus helping the growth of single phase Cu(In0.7Ga0.3)Se2, was proved by XRD analysis of the films selenized at defferent temperatures and the comparison with the films prepared by ordinary selenization. Solar cells have been prepared and found that the single phase have no influence on battery performance. The efficiency can reach 9.4% by process optimization. |
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| Keywords: | Cu(In0 7Ga0 3)Se2 electrodeposition Cu-In-Ga metallic precursors plasma activation Se source |
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