Different effect of NiMnCo or FeNiCo on the growth of type-Ⅱa large diamonds with Ti/Cu as nitrogen getter

In order to synthesize high-quality type-Ⅱa large diamond, the selection of catalyst is very important, in addition to the nitrogen getter. In this paper, type-IIa large diamonds are grown under high pressure and high temperature(HPHT) by using the temperature gradient method(TGM), with adopting Ti/Cu as the nitrogen getter in Ni_(70)Mn_(25)Co_5(abbreviated as NiMnCo) or Fe_(55)Ni_(29)Co_(16)(abbreviated FeNiCo) catalyst. The values of nitrogen concentration(N_c) in both synthesized high-quality diamonds are less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo or Ti/Cu(1.8 wt%) is added in the NiMnCo. The difference in solubility of nitrogen between both catalysts at HPHT is the basic reason for the different effect of Ti/Cu on eliminating nitrogen. The nitrogen-removal efficiency of Ti/Cu in the NiMnCo catalyst is less than in the FeNiCo catalyst. Additionally, a high-quality type-Ⅱa large diamond size of 5.0 mm is obtained by reducing the growth rate and keeping the nitrogen concentration of the diamond to be less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo catalyst.     

A New Dopant of NaN3 for High-Concentration-Nitrogen Diamond Synthesized by HPHT

Nitrogen is successfully doped in diamond by adding sodium azide （NaN3 ） as the source of nitrogen to the graphite and iron powders. The diamond crystals with high nitrogen concentration, 1000-2200ppm, which contain the same concentrations of nitrogen with natural diamond, have been synthesized by using the system of iron-carbon- additive NAN3. The nitrogen concentrations in diamond increase with the increasing content of NAN3. When the content of NaN3 is increased to 0.7-1.3 wt. %, the nitrogen concentration in the diamond almost remains in a nitrogen concentration range from 1250ppm to 2200ppm, which is the highest value and several times higher than that in the diamond synthesized by a conventional method without additive NaN3 under high pressure and high temperature （HPHT） conditions.     

Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature

We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, FesoNi20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction （XRD）. Morphology of the sample is observed by a scanning electron microscope （SEM）. Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

Effect of Carbon Source with Different Graphitization Degrees on the Synthesis of Diamond

Using three kinds of graphites with different graphitization degrees as carbon source and Fe-Ni alloy powder as catalyst, the synthesis of diamond crystals is performed in a cubic anvil high-pressure and high-temperature apparatus （SPD-6 × 1200）. Diamond crystals with perfect hexoctahedron shape are successfully synthesized at pressure from 5.0 to 5.5GPa and at temperature from 1570 to 1770K. The synthetic conditions, nucleation, morphology, inclusion and granularity of diamond crystals are studied. The temperature and pressure increase with the increase of the graphitization degree of graphite. The quantity of nucleation and granularity ofdiamonds decreases with the increase of graphitization degree of graphite under the same synthesis conditions. Moreover, according to the results of the M6ssbauer spectrum, the composition of inclusions is mainly Fe3 C and Fe-Ni alloy phases in diamond crystals synthesized with three kinds of graphites.     

High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.     

Properties of a New Nonlinear Optical Crystal CdZn2B2O6

Cadmium dizinc diborate （CdZn2B2O6） single crystals have been grown for the first time. The crystal structure of CdZn2B2O6 is the same as that of the Cd3Zn3B4O12. The x-ray diffraction, infrared and Raman spectra, differential scanning calorimetry analysis and density indicate that the physical and chemical properties of both crystals are very similar. Especially, the nonlinear optical coefficients of CdZn2B2O6 and Cd3Zn3B4O12 crystals are 2.6 and 2.4 times as large as that of KH2PO4 crystal respectively. Chemical etching experiments indicated that these crystals are very stable in neutral solution and not hygroscopic in air at room temperature.     

A pseudopotential approach to the superconducting state parameters of (Ni33Zr67)1? x M x (M=Ti, V, Co, Cu) ternary metallic glasses

Superconductivity in ternary metallic glasses has been investigated using the model pseudopotential approach, which has been found quite successful in explaining superconductivity in metals, binary alloys and binary glasses. It is observed that this simple methodology successfully explains superconducting behaviour of ternary glasses without requiring the solution of Dirac equation for a many body problem or estimation of various interactions as required in ab-initio pseudopotential theory. In the present work superconducting state parameters of fourteen metallic glasses of (Ni-Zr)-M system (M=Ti, V, Co, Cu) have been determined in the BCS-Eliashberg-McMillan framework. It is observed that addition of V, Co, and Cu as the third element (M) to a binary metallic glass (Ni₃₃ Zr₆₇) causes the parameters λ,T _c, α, andN ₀ V to decrease, and Coulomb pseudopotential (μ*) to increase with concentration of M, showing that the presence of third element (M) causes suppression of superconducting behaviour of the alloy. The decrease inT _c with increasing concentration of third element (M) may be attributed to the modifications in density of states at the Fermi levelN(E _F), and probable changes in the band structure of the alloy due to addition of the third element (M). Slight difference is noticed when Ti is added to the Ni₃₃ Zr₆₇ alloy. In this caseT _c rises initially and then decreases with concentration of M, showing a peak at aboutx=0.05. This indicates that on addition of Ti, 3d states grow near the Fermi level and hence contribute substantially toN(E _F), favouring superconducting behaviour in this case. The present results forT _c show an excellent agreement with the experimental data. QuadraticT _c equations have been proposed, which provide successfully theT _c values of ternary metallic glasses under consideration. Paper presented at National Conference on Current Trends in Condensed Matter Research, Warangal, India, September 20–22, 2004.     

Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes

Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300 K is obtained at a fixed forward current after switching from N2 to 10%H2＋N2. The sensor responses under different concentrations from 50ppm H2 to 10%H2＋N2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N2 and air atmosphere at 300 and 373K are compared. Oxygen in air azcelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity Of the sensor are calculated.     

Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K （0.17TL）. The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of ＂coarse dendrite-equiaxed grain-vermicular structure＂ with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.     

Electrical properties of high Curie temperature (1−x)Pb(In1/2Nb1/2)O3-xPbTiO3 single crystals grown by the solution Bridgman technique

0.65Pb(In_1/2Nb_1/2)O₃-0.35PbTiO₃ (PINT65/35) (starting composition) single crystals were grown successfully through the solution Bridgman technique using PbO flux and PMNT67/33 seed crystals. Because of the composition variation, the final composition of achievable crystals is in a range of 0.32-0.34 with the corresponding T_c range of 265-269 °C. The (001) plates of as-grown PINT66/34 single crystals show high Curie temperature (T_c=269 °C) and rhombohedral-tetragonal phase transition temperature (T_rt=134 °C). Besides, good electrical properties with high dielectric constant (ε>3000), low dielectric loss (tan δ∼1.2%), high piezoelectric constant (d₃₃∼2000 pC/N) and large electromechanical coupling factor (k_t≈59%) at room temperature have been obtained on the (001) plates. The sound velocity, acoustic impedance and other piezoelectric parameters were also measured on the (001) plates in this study, which provide us more detailed information about PINT66/34 single crystals.     

Effects of Interfacial Polarization on Voltage Tunability of Pb(Fe1/2Nb1/2)1-xTixO3 Single Crystals

The voltage tunability of Pb(Fe_1/2Nb_1/2)_1-xTi_xO₃ single crystals is investigated at a low electric field (<130 V/cm) in a low frequency range (<1 MHz). The results show that the capacitance is strongly suppressed by the applied dc biases for both the rhombohedral sample and the tetragonal sample. A negative voltage tunability is only detected in the tetragonal sample. The origin of the giant tunability and the negative tunability is discussed based on the multipolarization-mechanism model and the equivalent circuit model, respectively. It is ascribed to the interfacial polarization at the interface of electrode/sample.     

Crystal growth, structure and ferromagnetic properties of a Ce3Pt23Si11 single crystal

A high-quality single crystal of Ce₃Pt₂₃Si₁₁ has been grown using the Czochralski method. The crystal structure is presented and the chemical composition has been checked using an electron microprobe analyzer. Measurements of the electrical resistivity and magnetic susceptibility performed at low temperature show a ferromagnetic transition at T_c=0.44 K.     

Cs nuclear magnetic resonance study in CsZnCl3 single crystals of perovskite ABX3 type

CsZnCl₃ single crystals were grown by the slow evaporation method, and the spin-lattice relaxation rates and resonance lines of the ¹³³Cs nuclei in the resulting crystals were investigated using FT NMR spectrometry. The temperature dependence of the relaxation rate of the ¹³³Cs nuclei in the CsZnCl₃ crystals was found to be continuous near T_C (=366 K), and was not affected by this phase transition. Our results for CsZnCl₃ are compared with those obtained previously for other CsBCl₃ (B=Mn, Cu, and Cd) perovskite crystals. The Cs relaxation time of CsCdCl₃ is longer than that of CsMnCl₃. The differences between the atomic weights of Mn, Cu, Zn, and Cd are responsible for the differences between the spin-lattice relaxation times of these single crystals. The influence of paramagnetic ions is also important in these crystals. The differences between the spin-lattice relaxation times of these crystals could also be due to differences between the electron structures of their metal ions, in particular the structures of the d electrons.     

Direct observations of vortices in a high-Tc superconductor (La1-xSrx)2CuO4 by scanning SQUID microscopy

In order to investigate the behavior of vortices in high-T_c superconductors under low magnetic fields, we have performed scanning SQUID microscopy (SSM) on the ab-surfaces of (La_1-xSr_x)₂CuO₄ (LSCO) single crystals at low temperatures. The observed magnetic images clearly demonstrated vortices in units of K₀ (=hc/2e) below T_c. Vortices trapped inside the overdoped LSCO tended to be arranged in a one-dimensional manner, while those in optimally doped crystals were randomly distributed. From the variable-temperature SSM measurements, it was directly visualized that the normal state with regular magnetic-field distribution gradually changed into the inhomogeneous Meissner state, and finally vortices evolved, with decreasing temperature.     

High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Magnetic Behaviour of Sm2Co7/Fe/Sm2 Co7, Nanocomposite Trilayers with Cr and Ti Additions

Trilayered Sm2Co7/Fe/Sm2Co7 spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates. Very thin layers （0.3-0.7 nm） of Cr and Ti are added at the interfaces of the two magnetic phases. The thickness of StucCo7 is kept at 20nm and Fe at 6nm while the thickness of Cr and Ti are varied as 0.3, 0.5, and 0.7nm. The base pressure of sputtering chamber is kept below 10^-7 Torr and Ar pressure at 3-8m Torr. The samples are characterized by x-ray diffraction （XRD） and SQUID magnetometer. We report improvement in exchange coupling of nonacomposite magnets by addition of thin layers of Cr at interfaces.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Influence of niobium doping on the electrical properties of 0.58Pb(Sc1/2Nb1/2)O3-0.42PbTiO3 single crystal

Piezoelectric single crystals of 0.58Pb(Sc_1/2Nb_1/2)-0.42PbTiO₃ and Nb⁵⁺-doped PSN-PT have been grown using flux technique. It is believed that the addition of Nb⁵⁺ creates lead vacancy in order to compensate charge neutrality. The structural distortion that occured in the doped crystals has been revealed through broadening of some peaks in X-ray diffraction studies. Niobium content that increased from 0.50 to 1.00 mol% might have induced more defect dipoles associated with . This plays a significant role in improving the ferroelectric, dielectric and piezoelectric properties. Our observations clearly show an increase in the spontaneous polarization (P_r), dielectric constant at room temperature, degree of diffuseness and transition temperature (T_c) and also a decrease in coercive field. The reasons behind these enhanced electrical properties are discussed in detail.     

碳化钒作碳源合成金刚石

 以重量比为1∶6的VC和Ni₇₀Mn₂₅Co₅合金组成的体系，经6.0 GPa的高压力和1 500 ℃的高温处理20 min后，样品经X射线衍射分析表明VC发生分解，游离出的C生成了石墨和金刚石；该体系生成的金刚石多呈侵蚀性表面，平均粒度约为20 μm。