电解抛光法制备金属钨箔膜

研究了在硫酸甲醇体系中进行电解抛光制备状态方程(EOS)靶用钨薄膜。分析了钨的阳极极化曲线,对薄膜的表面形貌、晶粒取向、密度和厚度一致性进行了测试和分析,并制备出均方根粗糙度小于50nm、厚度一致性好于99%、能够保持原材料密度的钨箔膜,满足激光驱动材料高温高压状态方程研究的标准靶材料的需求,证明电解抛光是制备低表面粗糙度、块材密度的EOS所用金属箔材的有效手段。     

Z箍缩等离子体均匀色散晶体光谱成像

为了诊断Z箍缩等离子体X射线相关信息,利用自聚焦和均匀色散原理,研制了一种新型的均匀色散弯晶谱仪。晶体分析器采用-石英（1010）,布拉格角为43.4~72.7,利用有效面积为10 mm50 mm的X射线胶片接收光谱信号,实验在中国工程物理研究院阳加速器装置上进行,摄谱元件获得了Z箍缩铝丝阵等离子体的类H及类He谱线。实验结果表明:谱线分布遵循均匀色散条件,所研制均匀色散弯晶谱仪线色散率为-116.198 mm/nm,与理论值-120 mm/nm的相对误差为3.168%,能够用于Z箍缩等离子体X射线的光谱学研究。     

表面绝缘铝平面丝阵Z箍缩实验研究

在"强光一号"装置(1.3 MA,100 ns)上进行了镀2μm聚酰亚胺绝缘膜平面铝丝阵与普通铝丝阵Z箍缩对比实验研究.实验结果表明,表面绝缘能够影响Z箍缩内爆动力学和辐射特性.通过简单理论分析,表面绝缘可能会增加初始阶段的能量沉积和参与内爆的质量;表面绝缘对于抑制平面丝阵多峰现象有明显作用,然而在所进行的实验中,并未观察到对X射线产额的改善作用.     

二氧化钛薄膜表面粗糙度研究

为了探究二氧化钛(TiO₂)薄膜表面粗糙度的影响因素, 利用离子束辅助沉积电子束热蒸发技术对不同基底粗糙度以及相同基底粗糙度的K9玻璃完成二氧化钛(TiO₂)光学薄膜的沉积。采用TalySurf CCI非接触式表面轮廓仪分别对镀制前基底表面粗糙度和镀制后薄膜表面粗糙度进行测量。实验表明, TiO₂薄膜表面粗糙度随着基底表面的增大而增大, 但始终小于基底表面粗糙度, 说明TiO₂薄膜具有平滑基地表面粗糙的作用; 随着沉积速率的增大, 薄膜表面粗糙度先降低后趋于平缓; 对于粗糙度为2 nm的基底, 离子束能量大小的改变影响不大, 薄膜表面粗糙度均在1.5 nm左右; 随着膜层厚度的增大, 薄膜表面粗糙度先下降后升高。     

一种锌希夫碱配合物的表征及发光性能研究

合成并通过真空升华提纯得到了一种高纯度的希夫碱有机金属配合物水杨醛缩邻苯二胺合锌。通过元素分析、红外光谱、热重-差热曲线、紫外-可见光吸收光谱、荧光发射光谱和光致发光光谱表征了其结构、热稳定性以及能带结构。实验结果表明：水杨醛缩邻苯二胺合锌的玻璃化温度(T_g)高达183 ℃,分解温度为449 ℃; 水杨醛缩邻苯二胺合锌是一种多晶粉末状的发光材料,在紫外光的激发下,在四氢呋喃溶液体系中的荧光发射峰在508 nm处,为蓝绿色荧光,色纯度高,荧光量子效率高,禁带宽度2.62 eV; 利用真空热蒸镀很容易制备高质量薄膜,其发射峰在562 nm处,半高宽为48.5 nm的黄绿光发射。利用水杨醛缩邻苯二胺合锌为发光层制备了黄光有机电致发光器件。     

用于超薄反射镜热成形的Pt、Pt/Cr分离膜

针对热弯玻璃成形法制备高精度超薄反射镜时Pt分离膜造成的镜片污染问题,研究了Pt/Cr分离膜中不同Cr层厚度对热成形超薄反射镜玻璃基底表面粗糙度的影响.采用厚度为0.3 mm的Schott D263玻璃作为超薄反射镜基底材料,选取Pt、Pt/Cr作为模具和D263镜片之间的分离层材料进行实验.Pt薄膜的厚度为50nm,Cr层厚度分别为5nm、3.5nm、2.5nm、1.5nm,热成形实验采用"直接"复制方式.实验结果表明:Cr层厚度为1.5nm时,成形后模具表面分离膜未发生脱落,镜片表面粗糙度约为0.5nm,与D263镜片初始值接近,能够满足高能X射线望远镜对反射镜基底表面粗糙度的要求.     

基于箍缩装置的高能量密度物理实验研究进展

基于脉冲功率技术的箍缩装置能够在cm空间尺度和百ns时间尺度产生极端的高温、高压、高密度以及强辐射环境。中物院流体物理研究所在已建成的10 MA级的大型箍缩装置上开展多种负载构型的高能量密度物理实验研究。利用Z箍缩动态黑腔创造出了惯性约束聚变研究所需的高温辐射场;研究了金属箔套筒和固体套筒的内爆动力学特性;利用中低Z材料内爆获得了可观的K壳层线辐射并用于X射线热-力学效应实验研究;磁驱动准等熵加载和冲击加载为材料动态特性研究提供了新的实验能力;采用环形二极管和反射三极管技术的轫致辐射源获得了高剂量（率）的X射线和γ射线;利用磁驱动的径向金属箔模拟了天体物理中恒星射流的形成及其辐射的产生。此外,还介绍了利用反场构型磁化靶聚变装置开展的预加热磁化等离子体靶形成等实验结果。     

双通道共轴聚焦型X射线晶体光谱仪

研制了一种用于Z箍缩等离子体X射线光谱诊断的双通道共轴聚焦型晶体光谱仪。谱仪采用均匀色散(即线色散率为常数)和球面云母晶体作为两个通道的X射线色散元件,位于中轴线上的双胶片盒作为探测器,在大致相同的光谱范围内同时获取Z箍缩等离子体的时间积分光谱。在中国工程物理研究院"阳"加速器上开展了Z箍缩内爆摄谱实验,两通道分别获得了Z箍缩铝丝阵等离子体的类氢和类氦光谱谱线。实验结果表明:均匀色散通道光谱分布遵循均匀色散条件,实验得到的线色散率和设计值吻合很好,最大相对误差仅为3.48%,和球面晶体通道相比,它能更容易、更准确识别和处理光谱,在识别和分析陌生复杂光谱成分时具有优势。     

聚龙一号装置上首次铝套筒Z箍缩X射线背光照相实验

在聚龙一号脉冲功率装置上首次完成了对带正弦扰动铝套筒Z箍缩的X射线背光照相实验。实验采用千焦耳激光器（1053 nm, 1 kJ, 1 ns）驱动固体靶材产生X射线, 然后利用基于球面晶体的单色背光照相技术以及直接点投影背光照相技术, 成功观测到约7.5 MA电流驱动条件下, Z箍缩铝套筒的外边界不稳定性发展情况。该实验验证了在聚龙一号装置上联合千焦耳激光器开展X射线背光照相实验的能力, 为后续精密Z箍缩物理研究奠定了基础。     

溶胶-凝胶法制备氧化锌薄膜的压电行为

"采用溶胶-凝胶技术在单晶硅Si(111)上制备了ZnO压电薄膜,并以扫描电镜、X射线衍射仪(XRD)和原子力显微镜(AFM)进行了表征．XRD衍射实验表明ZnO薄膜随着膜厚的增大,其(002)取向逐渐增强;AFM研究了薄膜的表面形貌、粗糙度与晶粒大小的结果表明,ZnO压电薄膜的粗糙度与晶粒寸随着薄膜厚度的增大而减小．粗糙度为2.188~0.914 nm．利用PFM研究压电系数,发现随着薄膜厚度的增加,(002)生长方向增强,压电系数逐渐增大;当力参数小于薄膜的表面粗糙度时,压电系数测量不准确且在较大幅度     

Durability of Ultra-Thin Silver Films and Silver-Gold Alloy Films under UV Irradiation

Silver films(Ag) and silver-gold films(Ag-Au) with thickness ~15nm are coated on Bk7 glasses through thermal evaporation.After doping gold of 5.2%,the grain size of the Ag film reduces from 13.6nm to 9.1nm,also the surface roughness decreases from 1.45 nm to 0.94 nm.A UV lamp is used as the irradiation light source to accelerate the corrosion process in the atmosphere.After 17 h irradiation,the pure silver film surface turns dark,and the transmittances reduce from 350 nm to 500 nm,while the Ag-Au film degrades much less,almost negligibly after UV radiation.Additional x-ray photoelectron spectroscopy and atomic force micrographs data are provided to show atomic content of Sims and their surface morphologies.It is suggested that small grain size and high packing density of alloy film prevent reaction of silver with oxygen in the atmosphere,which leads to high stability of the Ag-Au Elm.     

Optical inhomogeneity of ZnS films deposited by thermal evaporation

Zinc sulfide (ZnS) films with optical thickness (reference wavelength is 620 nm) ranging from 310 to 1240 nm were deposited on quartz substrates at room temperature by a thermal evaporation system. The structure and morphology of the films were investigated by X-ray diffraction, atomic force microscopy, respectively. The optical properties of the films were determined by in situ transmittance measurements and wideband spectra photometric measurements, respectively. The experimental results show that the films exhibit cubic structure, and the intensity of the (2 2 0) diffraction peak enhances with the increase of optical thickness. Surface grain size and surface roughness increase monotonously with increasing film thickness. Refractive indices and extinction coefficients calculated by in situ transmittance measurements are well consistent with those calculated by wideband spectra photometric measurements. Both the refractive index and packing density of the film increase as the increase of film thickness, which confirms the film is positive inhomogeneous and has an expanding columnar structure. Extinction coefficients of the films increase with increasing film thickness, which results from the increase of surface roughness.     

二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺,利用泰勒霍普森相关相干表面轮廓粗糙度仪,研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加,二氧化锆薄膜表面粗糙度呈现出先缓慢增加,当基底的粗糙度大于10nm后呈现快速增加的趋势;随着二氧化锆薄膜厚度的增加,其表面均方根粗糙度（RMS）先减小后增大;随着辅助沉积离子能量的增加,其表面粗糙度呈现出先减小后增加的趋势。     

Structural, morphology and electrical properties of layered copper selenide thin film

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.      

Surface structure and composition of flat titanium thin films as a function of film thickness and evaporation rate

To correlate flat titanium film surface properties with deposition parameters, titanium flat thin films were systematically deposited on glass substrates with various thicknesses and evaporation rates by electron-beam evaporation. The chemical compositions, crystal structure, surface topographies as well as wettability were investigated by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and water contact angle measurement, respectively. The films consisted mainly of TiO₂. Small percentages of Ti₂O₃ and metallic Ti were also found at the film surface using high-resolution XPS analysis. Quantitative XPS showed little differences regarding elemental compositions among different groups of films. The films were obtained by varying the deposition rate and the film thickness, respectively. XRD data showed consistent reflection patterns of the different titanium samples deposited using different film thicknesses. Without exception measurements of all samples exhibited contact angles of 80° ± 5°. Quantitative AFM characterization demonstrated good correlation tendency between surface roughness and film thickness or evaporation rate, respectively. It is important to notice that titanium films with different sizes of grains on their surfaces but having the same chemistry and film bulk structure can be obtained in a controllable way. By increasing the film thickness and evaporation rate, the surface roughness increased. The surface morphology and grain size growth displayed a corresponding trend. Therefore, the control of these parameters allows us to prepare titanium films with desired surface properties in a controllable and reproducible way for further biological investigations of these materials.     

溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

Studies of structural evolution and sensing properties of ZnO nanocrystalline films

ZnO nanocrystalline films have been prepared on Si(1 0 0) substrate using direct current (D.C) magnetron sputtering technique at room temperature. The thickness of nanocrystalline films almost linearly increased with deposition duration and the sizes of crystalline grains almost kept unchanged. After deposition, thermal annealing was performed at 800 °C in atmosphere for 2 h in order to improve the qualities of ZnO thin films. Scanning electron microscope (SEM) images showed the surface roughness of the films less than 45 nm. X-ray diffraction (XRD) patterns revealed the slight evolution of the crystal structures. Raman scattering spectra confirmed the data obtained from X-ray diffraction measurements.With these ZnO nanocrystalline films, prototypic gas sensors were fabricated. Both sensitivity and response of the sensors to different gases (H₂ and CH₄) were investigated. A quick response of time, less than 1 second to CH₄ gas sensor has been achieved.     

电子束蒸发制备HfO2高k薄膜的结构特性

使用高真空电子束蒸发在p型Si（100）衬底上制备了高k HfO2薄膜.俄歇电子能谱证实薄膜组分符合化学配比；x射线衍射测量表明刚沉积的薄膜是近非晶的，高温退火后发生部分晶化；原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面，表明薄膜具有优良的热稳定性；椭偏测得在600?nm处薄膜折射率为2.09；电容电压测试得到的薄膜介电常数为19.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2薄膜的方法. 关键词： 高k薄膜 HfO2 电子束蒸发