Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors.     

Influences of annealing on structural and compositional properties of Al_2O_3 thin films grown on 4H–SiC by atomic layer deposition

Annealing effects on structural and compositional performances of Al_2O_3 thin films on 4H–Si C substrates are studied comprehensively. The Al_2O_3 films are grown by atomic layer deposition through using trimethylaluminum and H_2 O as precursors at 300?C, and annealed at various temperatures in ambient N_2 for 1 min. The Al_2O_3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750?C to 768?C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy(XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.     

Electrical and dielectric properties of Na_(1/2)La_(1/2)Cu_3Ti_4O_(12) ceramics prepared by high energy ball-milling and conventional sintering

We report on the measurements of the electrical and dielectric properties of Na_(1/2)La_(1/2)Cu_3Ti_4O_(12)(NLCTO) ceramics prepared by high energy ball-milling and conventional sintering without any calcination steps. The x-ray powder diffraction analysis shows that pure perovskite-like CCTO phase is obtained after sintering at 1025?C–1075?C. Higher sintering temperatures result in multi-phase ceramics due to thermal decomposition. Scanning electron microscope observations reveal that the grain size is in a range of ~ 3 μm–5 μm for these ceramics. Impedance spectroscopy measurements performed in a wide frequency range(1 Hz–10 MHz) and at various temperatures(120 K–470 K) are used to study the dielectric and electrical properties of NLCTO ceramics. A good compromise between high ε(5.7 × 10~3 and 4.1 × 10~3 at 1.1 k Hz and 96 k Hz, respectively) and low tan δ(0.161 and 0.126 at 1.1 k Hz and 96 k Hz, respectively) is obtained for the ceramic sintered at 1050℃. The observed high dielectric constant behavior is explained in terms of the internal barrier layer capacitance effect.     

Nonlinear Electrical Characteristics of Antimony and Copper Doped Tin Oxide Based Varistor Ceramics

The novel CuO-doped dense tin oxide varistor ceramics are investigated. The densification of tin oxide varistor ceramics could be greatly improved by doping copper oxide additives. The introduction of antimony additives into a SnO2. CuO ceramic system would make it possess excellent nonlinearity. The sample doped with 0.05 mol% Sb2 03 possesses the highest nonlinearity coefficient （α = 17.9） and the lowest leakage current density （ JL = 52μA cm^-2） among all the samples. A modified defect barrier model is introduced to explain the formation of the grainboundary barrier. The nonlinear behaviour of （Cu, Sb）-doped SnO2 varistor system could be explained by the barrier model.     

Improvement of sintering,nonlinear electrical,and dielectric properties of ZnO-based varistors doped with TiO_2

The effects of TiO_2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO_2–0.5Co_2O_3-0.5Bi_2O_(3–x)TiO_2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated in this work.The optimum sintering temperature of the prepared samples is deduced by determining the firing shrinkage and water absorption percentages.The optimum sintering temperature is found to be 1200℃,at which each of the samples shows a maximum firing shrinkage and minimum water absorption.Also minimum water absorption appears in a sample of x = 0.9 mol%.Higher sintering temperature and longer sintering time give rise to a reduction in bulk density due to the increased amount of porosity between the large grains of ZnO resulting from the rapid grain growth induced by the liquid phase sintering.The crystal size of ZnO decreases with increasing TiO_2 doping.The addition of TiO_2 improves the nonlinear coefficient and attains its maximum value at x = 0.7 mol% of TiO_2,further addition negatively affects it.A decrease in capacitance consequently in the dielectric constant is recorded with increasing the frequency in a range of 30 kHz–200 kHz.The temperature and composition dependences of the dielectric constant and AC conductivity are also studied.The increase of temperature raises the dielectric constant because it increases ionic response to the field at any particular frequency.     

Structural,magnetic, and dielectric properties of Ni–Zn ferrite and Bi_2O_3 nanocomposites prepared by the sol-gel method

Ni–Zn ferrite and Bi_2O_3 composites were developed by the sol-gel method. The structural, magnetic, and dielectric properties were studied for all the prepared samples. X-ray diffraction(XRD) was performed to study the crystal structure.The results of field emission scanning electron microscopy(FE-SEM) showed that the addition of Bi_2O_3 can increase the grain size of the Ni–Zn ferrite. Magnetic properties were analyzed by a hysteresis loop test and it was found that the saturation magnetization and coercivity decreased with the increase of Bi_2O_3 ratio. In addition, the dielectric properties of the Ni–Zn ferrite were also improved with the addition of Bi_2O_3.     

Structural evolution of a-Si:H/SiO2 multilayers upon step by step thermal annealing

a-Si:H/SiO_2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350℃ to 1100℃ in N_2 ambient with an increment of 100℃. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si－O stretching vibration of SiO_2 layers shift to 1087cm^{-1} after annealing at 1100℃, which demonstrates that the SiO_2 films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si－O vibration from interfacial SiO_x was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiO_x networks. The H-related bonds were observed in the form of H－Si－O_3 and H－Si－Si_{3-n}O_n (n=1－2) configurations, which are supposed to be present in SiO_2 and interfacial SiO_x layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies.     

Spectra and lasing properties of Er~(3+),Yb~(3+):phosphate glasses

The effects of Al_2O_3, Yb_2O_3, Er_2O_3 and OH~- on spectral properties of P_2O_5.Na_2O.SrO.Al_2O_3.Yb_2O_3.Er_2O_3 erbium phosphate glass were studied. 5, 8, and 13 mol% Al_2O_3, 4, 5, 6, 7 and 8 mol% Yb_2O_3 and0.05, 0.2, and 0.4 mol% Er_2O_3 were used. It was found that Al_2O_3 can improve fluorescent lifetime ofEr~(3+)ions, but the integrated absorption cross section of Er~(3+)ions decreases with the increase of Al_2O_3concentration. Evaluating from energy transfer efficiency of Yb~(3+)to Er~(3+)and spectral parameters ofYb~(3+)and Er~(3+),we conclude that 6 mol% Yb_2O_3 and 0.4 mol% Er_2O_3 are needed for LD pumped     

Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

Thin tungsten nitride (WNx) films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage (I-V ) measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts. Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. A TE model with a Gaussian distribution of Schottky barrier heights (SBHs) is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.     

Morphology-controlled preparation of tungsten oxide nanostructures for gas-sensing application

A novel three-dimensional(3D) hierarchical structure and a roughly oriented one-dimensional(1D) nanowire of WO_3are selectively prepared on an alumina substrate by an induced hydrothermal growth method.Each hierarchical structure is constructed hydrothermally through bilateral inductive growth of WO_3 nanowire arrays from a nanosheet preformed on the substrate.Only roughly oriented 1D WO_3 nanowire can be obtained from a spherical induction layer.The analyses show that as-prepared 1D nanowire and 3D hierarchical structures exhibit monoclinic and hexagonal phases of WO_3,respectively.The gas-sensing properties of the nanowires and the hierarchical structure of WO_3,which include the variations of their resistances and response times when exposed to NO_2,are investigated at temperatures ranging from room temperature(20 ℃) to 250 ℃ over 0.015 ppm-5 ppm NO_2.The hierarchical WO_3 behaves as a p-type semiconductor at room temperature,and shows p-to-n response characteristic reversal with the increase of temperature.Meanwhile,unlike the1 D nanowire,the hierarchical WO3 exhibits an excellent response characteristic and very good reversibility and selectivity to NO_2 gas at room temperature due to its unique microstructure.Especially,it is found that the hierarchical VO_3-based sensor is capable of detecting NO_2 at a ppb level with ultrashort response time shorter than 5 s,indicating the potential of this material in developing a highly sensitive gas sensor with a low power consumption.     

PbO对V_2O_5/TiO_2催化剂NH_3选择性催化还原NO的影响

基于铅在中国燃煤和MSW焚烧烟气中的特点,采用静态N_2物理吸附、NH_3化学吸附、程序升温表面反应、傅里叶变换红外光谱和催化剂活性评价的方法,研究了PbO对1 wt.%V_2O_5/TiO_2催化剂NH_3选择性催化还原NO的影响.结果表明,PbO使SCR催化剂活性降低.对于燃煤锅炉,PbO对V_2O_5/TiO_2催化剂的影响可以忽略不计;对于MSW焚烧炉,PbO是使V_2O_5/TiO_2催化剂失活的重要铅化合物.Pb覆盖在TiO_2表面上,与V活性位覆盖在TiO_2表面上的方式类似.催化剂的失活主要是由于PbO中和了催化剂表面Brφnsted酸性位的酸性,Brφnsted酸性位对于NH_3的吸附和活化起重要作用.     

Electrical conductivity of yttria-stabilized zirconia with cobalt addition

Yttria-stabilized zirconia is the most developed solid electrolyte for use in high-temperature solid oxide fuel cells. Commercial yttria-stabilized zirconia powders reach high densification at temperatures higher than that of the usual anode materials. Reduction of the sintering temperature of the solid electrolyte could allow for co-firing of both ceramic components, thereby reducing production costs. The main purpose of this work was to study the effect of small cobalt additions on densification and on electrical conductivity of 8 mol% yttria-stabilized zirconia. Linear shrinkage results show that the onset temperature for shrinkage decreases with increasing cobalt content. Impedance spectroscopy measurements reveal that the electrical conductivity depends on the sintering profile. For specimens sintered at 1400 °C for 0.1 h the electrical conductivity of grains and grain boundaries are almost unchanged with that of 8YSZ. In contrast, for specimens sintered at the same temperature but for 0.5 h of soaking time, the electrical conductivity is higher in 0.025 mol% samples and is lower for 1 mol% Co doped 8YSZ. Degradation of the microstructure by increased porosity was obtained for high additive contents.     

Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts

The forward current－voltage (I－V) characteristics of polycrystalline CoSi₂/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10^-4A·cm^-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi₂/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.     

Microstructure and electrical properties of vanadium-doped zinc oxide-based non-ohmic resistors

The microstructure and non-ohmic properties of the ternary system ZVM were investigated in accordance with Mn₃O₄ content. For all samples, the microstructure of the ternary system ZnO-V ₂O₅-Mn₃O₄ consisted of mainly ZnO grain and secondary phase Zn₃(V O₄)₂. The incorporation of Mn₃O₄ to the binary system ZnO-V ₂O₅ was found to restrict the abnormal grain growth of ZnO. The breakdown voltage in the V-I characteristics increased from 17.5 to 463.5 V/mm with the increase in Mn₃O₄ content. The incorporation of Mn₃O₄ up to 0.5 mol% improved non-ohmic properties by increasing non-ohmic coefficient, whereas the further additions decreased it. The highest non-ohmic coefficient (22.2) was obtained from Mn₃O₄ content of 0.5 mol%. It was found that the highest barrier height at grain boundary was 2.66 eV for Mn₃O₄ content of 0.5 mol%.     

(Sr,Co,Nb）掺杂SnO2压敏电阻的电学非线性

研究了Sr对新型(Co, Nb)掺杂SnO₂压敏材料微观结构和电学性质的影响.当SrCO ₃的含量从零增加到1.50mol%时，(Co, Nb)掺杂SnO₂压敏电阻的击穿电压从240V/mm猛增 到1482V/mm.样品的微观结构分析发现, 当SrCO₃的含量从零增加到1.50 mol%时, SnO2的晶粒尺寸迅速减小．晶界势垒高度测量揭示，SnO₂晶粒尺寸的迅速减小是击穿 关键词： 碳酸锶 二氧化锡 势垒 电学非线性     

低磁控溅射率MCP防离子反馈膜工艺研究

为消除反馈正离子对三代微光夜视器件光阴极的有害轰击,提高微光像增强器的工作寿命,开展了低磁控溅射率法沉积微通道板（MCP）Al₂O₃防离子反馈膜的工艺研究。通过优化制备工艺,获得了制备MCP防离子反馈膜的最佳沉积条件：溅射电压1000V,溅射气压(4～5)×10^-2 Pa,沉积速率0.5nm/min等。研究结果表明：在此工艺条件下,能够制备出均匀、致密且通孔满足质量要求的MCP防离子反馈膜。如果偏离这一最佳工艺条件,制备出的MCP防离子反馈膜膜层疏松、不连续,且通孔不能满足要求。     

V_2O_5/WO_3/TiO_2催化剂制备及其SCR性能研究

本文通过浸渍法制备了V2O5/TiO2系列筛选催化剂及V2O5/WO3/TiO2负载型催化剂,并在模拟评价装置上考察了上述催化剂在SCR反应巾的催化性能.结果表明,V2O5在涂材料中应该低于3wt.%;钒系催化剂对NOx的净化效率随反应温度的升高,先增加而后减小,存在一个适宜反应温度窗口;随反应温度升高, NH3泄漏量逐渐降低,在温度达到350°C之后,NH3泄漏世不再随温度的升高而变化;SCR反应温度较低时HC和CO浓度基本不变,但从450°C开始,HC浓度逐渐降低,而CO浓度则急剧升高;随NOx/NH3比例增加,NOx转化效率逐渐降低.     

Mode-Locked Erbium-Doped Fiber Laser Using Vanadium Oxide as Saturable Absorber

A mode-locked erbium doped fiber laser(EDFL) is demonstrated using the vanadium oxide(V_2O_5) material as a saturable absorber(SA). The V_2O_5 based SA is hosted into poly ethylene oxide film and attached on fiber ferule in the laser cavity. It shows 7% modulation depth with 71 MW/cm~2 saturation intensity. By incorporating the SA inside the EDFL cavity with managed intra-cavity dispersion, ultrashort soliton pulses are successfully generated with a full width at half maximum of 3.14 ps. The laser operated at central wavelength of 1559.25 nm and repetition frequency of 1 MHz.