微带型光导开关的电压转换效率

采用微带测试电路对光导开关电压转换效率进行了测试。依据传输线理论,考虑微带传输电路的端点反射,计算给出了光导开关导通电阻不为0的情况下,微带测试电路电压转换效率的解析结果。计算表明:对窄脉宽的线性电脉冲输出,电压转换效率将小于50%;对lock-on模式下的宽脉冲输出,电压转换效率可以超过50%,在理想情况下达到100%;在临界状态下,形成双峰电脉冲输出。结果表明,存在端点反射且光导开关产生电脉冲脉宽达到一定值时,微带线可以起到倍压传输线的作用。     

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10~(-9)A to 3.6×10~(-5)A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.