计算晶体CdCl2:Ni2+的电子顺磁共振谱的完全对角化和高阶微扰方法

采用半自洽场自由Ni²⁺的d轨道波函数和点电荷-偶极子模型,建立局部结构、光谱与电子顺磁共振(EPR)谱(零场分裂D和顺磁g因子)之间的定量关系.利用完全对角化方法(CDP)和高阶微扰方法,统一解释CdCl₂:Ni²⁺晶体的局部结构、光谱和电子顺磁共振谱(EPR),并比较两种计算方法得到的结果.     

三角对称晶场下d8电子组态的EPR参量的普遍公式及其应用

本文考虑到d⁸电子组态中所有自旋三重态和自旋单态对基态的影响,用高阶微扰法导出了d⁸电子组态在三角对称晶场下光谱和基态EPR普遍公式。发现在三角对称晶场下,d⁸电子组态离子的g_⊥ > g_‖或g_⊥ < g_‖和D > 0或D < 0是以立方对称晶场为界,晶体中顺磁离子的配体沿C₃轴伸长或压缩所致。利用所得公式计算了NiCl₂和NiSiF₆·6H₂O晶体的EPR参量,其结果与实验吻合较好。     

Ni(C3H10N2)2NO2(ClO4)晶体的ESR研究

报道了Ni(C₃H₁₀N₂)₂NO₂(ClO₄)晶体在T=1.5K温度和W波段的ESR实验.建立了d⁸离子基态³A₂(F)的零场分裂参量D,E,和g因子与斜方对称晶场势参量间的关系,并应用于Ni(C₃H₁₀N₂)₂NO₂(ClO₄)晶体.计算值与实验数据符合很好,表明所给关系式是合理的.     

Cu1-xHxZr2(PO4)3中Cu2+的EPR谱和局域结构研究

本文采用Cu²⁺斜方对称电子顺磁共振（EPR）参量的高阶微扰公式计算了晶体Cu_1-xH_xZr₂（PO₄）₃中Cu²⁺的EPR参量（g因子和超精细结构常数A因子）．计算结果表明，晶体Cu_1-xH_xZr₂（PO₄）₃中[CuO₆]^10-基团的Cu-O键长分别为R_||≈0.241 nm，R_⊥≈0.215 nm，平面键角τ≈80.1°；由于对称性降低，中心金属离子基态²A_1g（θ）和²A_1g（ε）有一定程度混合，混合系数α≈0.995．所得EPR谱图的理论计算值与实验数据符合得很好．     

GeFe2O4晶体的基态能级和零场分裂参量

GeFe₂O₄是一种单晶化合物，考虑到由3个〈111〉方向之一的一个 轴，从一个中心位置 到另一个中心位置之间，以Fe²⁺离子为中心离子和O^2-为配体构 成了三角（C 3v）对称体系.利用不可约张量理论，建立了3d⁴/3d⁶离子三角（C3 v）对称的晶体场和 自旋相互作用哈密顿矩阵，因此，由完全对角化的晶体场和自旋-轨道相互作用哈密顿矩阵 和电子顺磁共振理论公式求出单晶GeFe₂O₄中Fe²⁺离子 的电子顺磁共振零场分 裂参量D和F-a.并研究了自旋三重态对电子顺磁共振（EPR）零场分裂的贡献.结果显示自旋 三重态对基态零场分裂的贡献是较强的，理论计算结果与实验值相符. 关键词： 自旋三重态 晶体场 低自旋态 高自旋态 零场分裂     

CuGeO3晶体自旋-佩尔斯态的EPR

报道了CuGeO₃单晶在96GHz频率,1 4K温度下的电子顺磁共振(EPR)实验,测量了主轴g因子.导出了Cu²⁺离子在CuGeO₃自旋佩尔斯系统中的混合d轨道基态波函数.采用近似自洽场方法计算了CuGeO₃的主轴g因子.使实验结果得到了解释.     

YAG:Mn2+的EPR谱的理论解释

本文利用SCF-d轨道理论,采用d⁵离子低对称场下的高阶微扰零场分裂公式,对YAG:Mn²⁺的零场分裂进行了理论计算,得到了与实验相符合的理论结果.从而解决了多年来YAG:Mn²⁺的EPR谱中理论与实验不符的困难.     

三角对称晶场中6 S(3d5)态离子零场分裂参量的微观起源

基于完全对角化方法(complete diagonalization method, CDM), 研究了⁶ S(3d⁵)态离子在三角晶场(包括C_3v,D₃,D_3d点群对称晶场)中零场分裂(zero-field splitting, ZFS)参量D和(a-F)的微观起源.研究中除了考虑研究者通常考虑的SO(spin-orbit)磁相互作用外,同 关键词： 6 S(3d⁵)态离子')" href="#">⁶ S(3d⁵)态离子 零场分裂参量 磁相互作用 完全对角化方法     

立方对称晶场中6S(3d5)态离子的磁相互作用及其自旋哈密顿参量的微观起源

基于完全对角化方法(complete diagonalization method, CDM), 研究了⁶S(3d⁵)态离子在立方对称晶场中的磁相互作用,分析了自旋哈密顿参量(a, g,Δg)的微观起源.研究中除了考虑研究者通常考虑的SO(spin-orbit)磁相互作用外,同时考虑了SS(spin-spin),SOO(spin-other-orbit),OO(orbit-orbit)磁相互作用.研究表明：⁶S(3d⁵)态离子在立方对称晶场中的自旋哈密顿参量起源于五种机理,即SO机理,SS机理,SOO机理,OO机理以及SO-SS-SOO-OO联合作用机理.文中研究了五种机理的相对重要性,结果表明：SO机理与SO-SS-SOO-OO联合作用机理在五种机理中最为重要.尽管SS,SOO,OO磁相互作用单独作用时对自旋哈密顿参量的贡献很小,但它们的联合作用SO-SS-SOO-OO机理对自旋哈密顿参量的贡献非常可观.此外研究表明：零场分裂参量a主要来自纯自旋四重态及自旋二重态与自旋四重态联合作用的贡献,而Zeemang(或者Δg)因子主要来自纯自旋四重态的贡献.纯自旋二重态对自旋哈密顿参量a与g(或者Δg)的贡献为零.在我们所选择的晶场区域,发现下列关系始终成立：a>0,a(-|Dq|)<a(|Dq|),g(-Dq)=g(Dq),a(-Dq,-ξ_d,B,C)=a(Dq,ξ_d, B,C),Δg(-Dq,-ξ_d, B, C)=Δg(Dq,ξ_d, B, C).作为本文理论的应用,研究了四种典型的Mn²⁺掺杂晶体材料,即Mn²⁺:KZnF₃,Mn²⁺: RbCdF₃,Mn²⁺: MgO,Mn²⁺: CaO,理论与实验测量符合很好. 关键词： 自旋哈密顿参量 6S(3d⁵)态离子')" href="#">⁶S(3d⁵)态离子 磁相互作用 完全对角化方法(CDM)     

掺杂晶体材料Al2O3∶Ni2+中顺磁离子N2+局域结构及其电子顺磁共振参量的研究

按照叠加模型和微扰理论,建立了电子顺磁共振（EPR）参量（D, g_∥, g_⊥）与Al_2O3∶Ni²⁺晶体局域结构之间的定量关系. 利用EPR参量决定了Al₂O₃∶N i²⁺晶体的局域结构. 通过考虑适当的晶格畸变,成功地解释了Al₂O₃∶Ni²⁺晶体基态很大的零场分裂和各向异性的g因子. 获得了Ni²⁺ 离子上方最近邻的三个O^2-离子偏向111〕晶轴0.603°, 而Ni²⁺离子下方的三个O^2-离子偏向〔111〕晶轴0.598°.     

Theoretical studies of spin-Hamiltonian parameters for Ni ions in CsMgX3 (X=Cl, Br, I) crystals from the two-mechanism model

In this paper, the high-order perturbation formulas of spin-Hamiltonian (SH) parameters (g factors g, g and zero-field splitting D), including both the crystal-field (CF) and for the first time charge-transfer (CT) mechanisms, are established for 3d⁸ ions in trigonal octahedral clusters. By using these formulas, the SH parameters of Ni²⁺ ions in CsMgX₃ (X=Cl, Br, I) crystals are calculated. The results are consistent with the experimental values. The calculations suggest that the sign of Q^CT (Q=Δg, Δg or D, where the g-shift Δg_i=g_i−g_e, g_e≈2.0023 is the value of free-electron) due to CT mechanism is the same as that of the corresponding Q^CF due to CF mechanism, and the relative importance of CT mechanism (characterized by Q^CT/Q^CF) increases with the increasing atomic number of ligand X. So, for the 3dⁿ ML_m clusters with ligand having large atomic number, the reasonable theoretical explanations of all SH parameters should take both CF and CT mechanisms into account. The defect structure of (NiX₆)⁴⁻ impurity centers in CsMgX₃:Ni²⁺ crystals is also considered in our model.     

Binding energy of an exciton bound to ionized donors in quantum dots

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a positive ion located on the z axis at a distance d from the dot plane are calculated by using the method of few-body physics. This configuration is called a barrier (D⁺,X) center. The dependence of the binding energy of the ground state of the barrier (D⁺,X) center on the dot radius for a few values of the distance d between the fixed positive ion on the z axis and the dot plane is obtained. We find that when d<0.2nm the barrier (D⁺,X) center does not form a bound state.     

Identification of the double and single acceptor state of isolated NiGa in GaAs

The question of the exact energy positions of isolated Ni_Ga as well as their optical and electrical properties have not yet been fully clarified in GaAs. We present a systematic study by deep-level transient spectroscopy, deep-level optical spectroscopy and optical absorption performed on several Ni-doped GaAs materials: n- and p-type LEC (liquid-encapsulated Czochralski) grown and p-type layers grown by liquid-phase epitaxy (LPE). All the electrical and optical results are up to now relatively coherent with the following identifications: (i) the double-acceptor charge state (Ni⁺ /Ni²⁺) is at E_c - 0.4 eV, (ii) the single-acceptor charge state (Ni²⁺ / Ni³⁺) is at E_v + 0.2 eV. However, when Ni is introduced during LPE in p-type materials we do not detect the Ni²⁺ /Ni³⁺ level which suggest a very low solubility of Ni in the LPE growth conditions.     

Using X(3823)→J/ψπ+π− to identify coupled-channel effects

Very recently, the Belle and BESIII experiments observed a new charmonium-like state X(3823), which is a good candidate for the D-wave charmonium ψ(1³D₂). Because the X(3823) is just near the D ¯D^∗ threshold, the decay X(3823)→ J/ψπ⁺π⁻ can be a golden channel to test the significance of coupled-channel effects. In this work, this decay is considered including both the hidden-charm dipion and the usual quantum chromodynamics multipole expansion (QCDME) contributions. The partial decay width, the dipion invariant mass spectrum distribution dΓ[X(3823) → J/ψπ⁺π⁻]/dm_π⁺_π⁻, and the corresponding dΓ[X(3823) → J/ψπ⁺π⁻]/d cos θ distribution are computed. Many parameters are determined from existing experimental data, so the results depend mainly only on one unknown phase between the QCDME and hidden-charm dipion amplitudes.     

NiSO4·6H2O晶体的结构、光学和磁学性质的理论研究

采用半自洽场(semi-SCF)3d波函数、Ballhausen的自洽场(SCF)O2-波函数和点电荷模型,通过能量完全对角化方法(CDP),对NiSO4·6H2O晶体在常温下的局部对称结构、吸收光谱,电子顺磁共振谱(EPR)以及磁化率x作出了统一解释.将计算结果与实验值进行了比较.讨论了微扰方法、分子轨道方法(LCAO-MO)、参量拟合方法、Clementi单Zeta波函数等问题.     

β-二酮Gd(Ⅲ)配合物EPR谱解析及其零场分裂张量的计算

稀土Gd (Ⅲ)的电子组态为4f⁷,七个未偶电子之间较强的自旋自旋相互作用,以致于EPR波谱相互重叠呈一条简单的包络线,几乎得不出有用的信息,限制了EPR波谱在这一领域中的应用.本文用自编的一个模拟程序,先是对包络线进行分解剥离,确定各谱峰的g-值.然后用自编的另一个程序根据所得之g-值计算出零场分裂张量D和E.对五个不同的β-二酮类Gd (Ⅲ)配合物进行了解析和计算,得到了满意的结果.     

The Pressure-Induced Shifts of Energy Spectra of ZnS:Ni2+

The calculations of the whole energy spectrum of Zns:Ni²⁺ at normal pressure and pressure-induced shifts of its levels have been carried out on the basis of the theory of pressure-induced shifts and the diagonalization of the complete d⁸ energy matrix in a regular tetrahedral field. The calculated results are in very good agreement with experimental data at normal and high pressures. The comparison between the results of ZnS:Ni²⁺ and Mg0:Ni²⁺ indicates that the comlency of ZnS:Ni²⁺ is obviously stronger than the one of MgO:Ni²⁺;the expansion of electron wavefunctions of ZnS:Ni²⁺ under pressure is obviously larger than that of MgO:²⁺; and the pressure-induced shifts of levels of znS:NiZf show strong nonlinearity.     

CaBa-铝酸盐玻璃中Cr4+谱线宽度随温度的变化

测量了15~300K温度范围内57.5%Al_1.5O-35%CaO-7.5%BaO玻璃中四价铬的发射光谱.这种材料中铬离子的能级处于Tanabe-Sugano图上弱场范围中,最低的激发态是³T₂,发射谱是一个宽带.按照单频近似理论拟合低温下的光谱,得到³T₂能级的零声子线位置E_zp=8400cm^-1,声子能量tω=320cm^-1,黄昆因子S=358.尽管单频近似能够较好地描述低温下的线形,发射光谱宽度随温度的变化却与单频近似理论的结果不符.讨论了这种差别的原因,认为可能的解释是与激发态耦合的声子能量大于与基态耦合的声子能量.