有机纳米信息存储中的结构转变

采用真空热蒸发方法制备了有机单体薄膜对硝基苯腈p-nitrobenzonitrile(PNBN).利用扫描隧道显微镜(STM)在PNBN薄膜上进行信息记录点的写入,通过在STM针尖和高定向裂解石墨(HOPG)之间施加电压脉冲,直接观察到了信息记录点写入前后薄膜发生的局域结构转变.信息记录点的写入机制主要是这种纳米范围结构变化所导致的薄膜由高阻态向低阻态转变,高阻态对应0,低阻态对应1. 关键词： p-nitrobenzonitrile(PNBN) 扫描隧道显微镜(STM) 结构转变     

有机复合薄膜中超高密度信息存储研究

利用大气中工作的扫描隧道显微镜，在真空蒸发方法制备的有机复合薄膜上，通过施加电压脉冲法做出了信息点阵，信息点大小为1.3nm.电流-电压特性表明：存储区表现为导体特性，非存储区为绝缘体特性.信息存储实验表明：相邻两个信息记录点的间距可小于2nm,信息存储密度可高达2.5×10¹³bit/cm².对信息存储的机制进行了初步分析. 关键词：     

自组装有机分子薄膜的可逆超高密度信息存储

信息技术的迅速发展对信息存储密度提出了越来越高的要求，采用自组装方法研究了有机分子4’-氰基-2，6-二甲基-4-羟基偶氮苯（4’cyano-2，6-dimethyl-4-hydroxy azobenzene）的成膜特性．通过在扫描隧道显微镜的针尖和基底之间加脉冲电压在薄膜上进行信息点的写入，得到了直径为1．8nm的信息点，并分析了信息点形成的机理．     

纳米电子学中超高密度信息存储研究的新进展

超高密度信息存储是纳米电子学的重要课题，我们根据电荷转移原理，在有机复合薄膜上用扫描隧道显微镜首次得到直径为１３ｎｍ的信息点阵．信息记录点的形成起源于薄膜的局域电导变化，即此有机薄膜具有电学双稳态特性     

热辅助磁盘探针存储的研究

描述了一种热辅助磁盘存储技术，该技术可应用于未来的高密度磁盘存储.记录介质是一种CoNi/Pt多层膜，它可用作垂直模式的磁记录介质.使用扫描隧道显微镜(STM)产生的隧道电流作为热源对磁膜进行局部加热.隧道电流随着加在STM针尖与磁膜之间的脉冲电压幅值的增大而增大.实验结果显示了圆形记录点在磁膜上生成，记录点尺寸与电压值相关，阈值电压为4V左右.当电压高于阈值时，记录点尺寸随着电压的增大而增大,平均尺寸为170nm；当电压低于阈值时，未发现记录点.一个简单的模型解释了以上实验现象. 关键词： 扫描隧道显微镜 热辅助磁盘存储技术 高密度磁盘存储     

同质与异质外延掺杂CVD金刚石薄膜的结构与性能

采用化学气相沉积(CVD)技术,以高温高压(HTHP)合成的(100)金刚石和p型(100)Si为衬底制备了硫掺杂和硼-硫共掺杂金刚石薄膜,利用原子力显微镜(AFM)、扫描隧道显微镜(STM)及隧道电流谱(CITS)等手段分析同质和异质外延CVD掺杂金刚石薄膜的结构和性能.结果表明:异Si衬底上CVD金刚石的形核密度低,薄膜表面比较粗糙,粗糙度达到18.5nm;同质HTHP金刚石衬底上CVD金刚石薄膜晶粒尺寸约为10—50nm,表面平整,表面粗糙度为1.8nm.拉曼测试和电阻测量的结果显示,在HTHP金刚 关键词： 金刚石 掺杂 外延     

Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究

本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO₃薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi₂和 C54-TiSi₂.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO₃薄膜与Si衬底之间的相互作用. 关键词： 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) 3')" href="#">SrTiO₃ 2')" href="#">C54-TiSi₂     

基于脉冲电压STM的单原子识别预研究装置

建立起一套工作于真空环境下的基于脉冲电压扫描隧道显微镜(STM)的单原子识别预研究装置.该装王主要由脉冲发生器、真空系统和STM系统三部分组成,能够在5×10-5Pa的真空环境下进行快脉冲STM实验.利用此装置,进行了单个快脉冲诱导的石墨表面超大周期结构的脉冲实验以及脉冲偏压不破坏STM针尖和样品表面的阈值实验.     

超高密度信息存储／分子存储及其存储机理

在有机功能纳米薄膜上通过扫描隧道显微技术实现了超高密度的信号存储,存储点的大小在1．3nm左右,存储点间距为1．5nm,相应的存储密度为10^13bits/cm^2,实验与理论计算的结果表明,其存储机理是薄膜的导电性质的变化。     

Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究

为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi₂/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi₂ /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异. 关键词： 2纳米岛')" href="#">TiSi₂纳米岛 Sr/Si(100)表面 扫描隧道显微镜     

Polarization storage by two-photon-induced anisotropy in bisazobenzene copolymer film

A copolymer containing bisazobenzene chromophores, poly[(methylmethacrylate)-co-4-{(2-methacryloyloxyethyl)oxy}-4′-(4-nitro-phenylazo)azobenzene)] (poly(MMA-co-M2BAN)), was synthesized and used for two-photon-induced polarization storage. Based on two-photon-induced optical anisotropy resulting from photoselective isomerization of bisazochromophores, the data have been recorded by linearly polarized Ti:Sapphire laser (wavelength: 800 nm, pulse duration: 80 fs, and repetition rate: 80 MHz) and read by reflection confocal laser scanning microscope. The recorded bits are dark dots when the polarization of the reading beam is parallel to the recording beam, but the recorded bits become bright dots when the polarization of the reading beam is perpendicular to the recording beam. Two letters can be encoded in the same region of a given layer by separating the two polarization directions of recording beams at an angle of 45°. The relationships between the readout intensity of the recorded bits and the recording power under two different readout modes were investigated and the results showed that there are two opposite change trends for parallel readout and perpendicular readout, respectively, and the readout threshold value is around 12 mW.     

Holographic storage of multiple high-capacity digital data pages in thick photopolymer systems

Multiple digital data pages (480 kbits per page) were holographically recorded and retrieved with low bit-error rates in thick (~250- and ~500-mum) photopolymer media. The photopolymer systems were fabricated with the optical quality and low level of scatter required for digital data storage. We believe that these results represent the first demonstration of holographic storage of high-capacity digital data pages in photopolymer media with the thickness that will be required for such storage densities.     

利用菌紫质薄膜进行角度复用和偏振复用全息存储实验研究

全息光存储以其高密度、大容量、高速并行数据存取而成为光存储领域的一个重要研究方向。生物光致变色材料———菌紫质是一种新型可擦重写全息记录介质。实验证明了使用菌紫质薄膜进行角度复用和偏振复用全息存储的可行性。利用菌紫质的光致变色特性,采用90°角度复用全息存储光路,在BR-D96N薄膜样品同一位置上实现了6幅全息图存储,并分别读出了无串扰的再现像。利用菌紫质薄膜的光致各向异性进行了偏振复用全息存储,在BR-D96N薄膜样品的同一位置上存储了两幅正交偏振光记录的图像,用原参考光再现和偏振片选择,可分别读出这两幅图像。     

Selective phase masking to reduce material saturation in holographic data storage systems

Emerging networks and applications require enormous data storage. Holographic techniques promise high-capacity storage, given resolution of a few remaining technical issues. In this paper, we propose a technique to overcome one such issue: mitigation of large magnitude peaks in the stored image that cause material saturation resulting in readout errors. We consider the use of ternary data symbols, with modulation in amplitude and phase, and use a phase mask during the encoding stage to reduce the probability of large peaks arising in the stored Fourier domain image. An appropriate mask is selected from a predefined set of pseudo-random masks by computing the Fourier transform of the raw data array as well as the data array multiplied by each mask. The data array or masked array with the lowest Fourier domain peak values is recorded. On readout, the recorded array is multiplied by the mask used during recording to recover the original data array. Simulations are presented that demonstrate the benefit of this approach, and provide insight into the appropriate number of phase masks to use in high capacity holographic data storage systems.     

Vacuum Ultraviolet Absorption Spectrum of Difluoromethane Reinvestigated

The vacuum ultraviolet (VUV) absorption spectrum of difluoromethane (CH₂F₂) was studied using synchrotron radiation from the storage ring Indus-1, Indore, India. Spectra were recorded in the spectral region 1050–1500 Å (～8.3–11.8 eV) at a resolution of 1.5 Å. Three absorption band systems were observed in this region. Overall features observed are in good agreement with previously published work. Some discrepancies in assignments of the observed vibronic bands carried out by previous workers have been resolved. The observed bands have been classified in terms of Rydberg series.     

一种4阶RLL(2,12)调制码的CPLD的实现

现有的光存储系统采用二值的记录模式,普遍使用的是游程长度受限(Run-length limited,RLL)的调制编码,并将信息编码记录在信息符的长度中。新型多阶RLL光存储采用多阶RLL编码方案,将信息同时记录在信息符的长度和信号幅值中,从而大幅度地提高了光盘的容量。为了研究多阶RLL编码的逻辑正确性和电路复杂度,设计了基于可编程逻辑器件的硬件平台。多阶RLL编码可以用有限数量逻辑门实现编码,有望用于未来高密度多阶光存储系统。     

Multilevel phase and amplitude modulation method for holographic memories with programmable phase modulator

The utilization of spatial quadrature amplitude modulation (SQAM) signals with amplitude and phase modulation is a simple method used to improve storage capacity in a holographic data storage system. We propose a multilevel phase and amplitude modulation method for holographic memories with a programmable phase modulator (PPM). In this method, holographic page data is recorded by a two-step exposure process for different phase-modulated data. There is no need to adjust the positions of spatial light modulators (SLM) with high accuracy because we use only one spatial modulator. We estimate the quality of 16 SQAM signals produced by our technique.     

A new organic complex thin film for ultra-high-density data storage with a scanning tunneling microscope

A new organic complex, tetrathiafulvalene/m-nitrobenzylidene propanedinitrile (TTF/m-NBP), was prepared to use as an ultra-high-density data-storage medium. A nanometer-scale recording technique was demonstrated with a scanning tunneling microscope (STM) under ambient conditions. The organic complex thin film was fabricated by using a vacuum thermal deposition method. The results of Fourier transform infrared spectra showed that the structure of the organic complex thin film was the same as that of a complex crystal. Data were recorded by applying voltage pulses between the tip and the substrate. Current–voltage (I–V) curves measured by the STM showed that the conductance of the recorded region is much higher than that of the unrecorded region, which indicated that the data were recorded by a local change of the electrical property of the film. The smallest recorded mark was 1.1 nm in diameter and the width of the pulse voltage has an influence upon the diameter of the recording marks. PACS 73.61.Ph; 71.20.Rv; 72.80.Le; 33.15.Kr; 81.15.Ef     

低温储罐自增压特性的实验研究

LNG是一种易燃易爆的低温气体,通常采用无损储存。由于外界漏热,储罐内压力会不断上升,此升压速率对无损储存的安全有着重要的影响。文中建立了低温储罐自增压以及温度分层实验装置,对罐内的温度分层及此时的升压过程进行了实验研究。     

Femtosecond laser induced photoluminescence in poly(methyl methacrylate) and three-dimensional optical storage

We report on a femtosecond-laser induced photoluminescence (PL) in poly(methyl methacrylate) and its potential application to three-dimensional optical storage. Irradiation with a focused 800 nm, 1 kHz, 100 fs pulsed laser induced a strong PL change in UV-visible region. Absorption spectra and Fourier-transform infrared spectra before and after laser irradiation indicate the PL may result from the emissive oxidized products of photo-degradation reaction of PMMA. This makes it possible to read out the stored data by detecting the PL change. The pulse energy threshold of the light-induced PL change of PMMA is found to be at ∼2 μJ/pulse and the optimal recording energy is ∼3 μJ/pulse. A ten-layer pattern inside the bulk sample recorded by tightly focusing a pulsed laser beam was read out by a reflection-type fluorescent confocal microscope, which detected the emission in visible range as the signal. High-contract fluorescent images with a much higher signal-to-noise ratio were obtained without crosstalk in comparison with the ordinary reflection mode.