Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Specialty Yb fiber amplifier for microchip Nd laser: Towards ∼1-mJ/1-ns output at kHz-range repetition rate

We demonstrate and optimize, for a mJ/ns release at the wavelength 1.064 μm, the operation of a compact laser system designed in the form of a hybrid, active-passive, Q-switched Nd³⁺:YAG/Cr⁴⁺:YAG microchip laser seeding an Yb-doped specialty multi-port fiber amplifier. As the result of the amplifier optimization, ∼1 mJ, ∼1 ns, almost single-mode pulses at a 1-10-kHz repetition rate are achieved, given by a gain factor of ∼19 dB for an 11-μJ input from the microchip laser. Meanwhile, a lower pulse energy, ∼120 μJ, but a much higher gain (∼25 dB) are eligible for the less powerful (0.35 μJ) input pulses.     

Tunable, μs-pulsed ytterbium fiber laser system with a linewidth below 2.7 GHz

We report on a widely tunable, pulsed laser system with narrow spectral linewidth based on a continuous wave ytterbium fiber oscillator, a pulse shaper and a power amplifier stage. The system is tunable from 1055 nm to 1085 nm and provides a maximum pulse energy of 155 μJ with a pulse duration of 1-5 μs. The linewidth is less than 2.7 GHz over the whole tuning range.     

Comparison of luminescence spectra of natural spodumene under KrCl laser and e-beam excitation

Spectral characteristics of pulsed photoluminescence (PL) and pulsed cathodoluminescence (PCL) of a natural spodumene were investigated. PL was excited by laser radiation at 222 nm with pulse duration of 10 ns at FWHM. PCL was excited by electron beams with pulse duration from 0.1 up to 4 ns and with current densities of 40-200 A/cm². There was a dominant broad band at 600 nm due to the manganese impurity in PCL spectra. But in PL spectra, the orange band had the intensity comparable with intensities of intrinsic defect bands. At sample cooling by liquid nitrogen, the intensity of orange band in the PCL spectrum increased by two times and the short-wave shoulder of the band reduced.     

Effects of thermal treatment on femtosecond laser fabricated diffraction gratings in polystyrene

We report the fabrication of efficient, buried diffraction gratings and micro-craters in bulk polystyrene using femtosecond laser direct writing technique. We recorded a maximum diffraction efficiency of 10% for a buried grating fabricated at 1 μJ energy, 1 mm/s speed, and a period of 30 μm. Buried micro-craters, with typical dimensions of ∼2 μm, were achieved at low energies and high scanning speeds. From the field emission scanning electron microscope studies, the observed emission is attributed as due to the inner surface modifications and the debris settled around the voids. The fabricated gratings subjected to heat treatment were tested for the diffraction efficiency and emission at different excitation wavelengths and the observed results are presented. Raman spectra collected from the femtosecond laser modified regions revealed the disappearance of few Raman modes at high peak intensities associated with incident Gaussian laser pulse. Potential applications of these luminescent micro-craters are highlighted.     

Surface temperature evolution in pulsed laser action of millisecond range

An originally developed multi-wavelength pyrometer (12 wavelengths in the range 1.001-1.573 μm, 50 μs acquisition time for each photodiode, 800 μm spatial resolution, 900-3500 °C brightness temperature range) is used to measure brightness temperature under the pulsed action of Nd:YAG laser (HAAS-HL62P) on stainless steel (INOX 304L) substrates. Specially developed “notch” filters (10⁻⁶ transparency at 1.06 μm wavelength) are applied to avoid the influence of laser radiation on temperature measurements. The true temperature is restored on the basis of method of multi-colour pyrometry. The accuracy of brightness temperature measurements is examined by comparing the temperature evolution for pulses with different durations but with the same value of energy density flux.The influence of the following parameters is studied keeping the remaining ones constant: pulse duration (6-20 ms, rectangular pulse shape), energy per pulse (10-33 J, rectangular pulse shape), pulse shape (three types of triangulars and one rectangular). Finally the evolution of surface temperature for pulses with more complex shapes but with the same pulse duration and energy per pulse is compared.     

Passive Q-switching of short-length Tm-doped silica fiber lasers by polycrystalline Cr:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm³⁺-doped silica fiber lasers near 2 μm pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr²⁺:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 μJ and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at ∼10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed.     

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO₂) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar⁺ laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 °C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures.     

Two-photon recording of microholograms in photopolymer materials with new cationic thioxanthone photoinitiators

We have demonstrated two-photon induced recording of the microholograms at an arbitrary point within thick (∼100 μm) photopolymer material using photoinitiators on a basis of new cationic thioxanthone derivatives. Such material provides high values of refractive index change Δn = 4.8 × 10⁻³, and holographic recording sensitivity S = 1.2 cm/J. A nanosecond laser pulse at a wavelength of 532 nm was used for recording. For the selective on the depth reading of the microholograms the method of collinear heterodyning was applied.     

Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers

Ultra-short pulsed laser ablation and micromachining of n-type, 4H-SiC wafer was performed using a 1552 nm wavelength, 2 ps pulse, 5 μJ pulse energy erbium-doped fiber laser with an objective of rapid etching of diaphragms for pressure sensors. Ablation rate, studied as a function of energy fluence, reached a maximum of 20 nm per pulse at 10 mJ/cm², which is much higher than that achievable by the femtosecond laser for the equivalent energy fluence. Ablation threshold was determined as 2 mJ/cm². Scanning electron microscope images supported the Coulomb explosion (CE) mechanism by revealing very fine particulates, smooth surfaces and absence of thermal effects including melt layer formation. It is hypothesized that defect-activated absorption and multiphoton absorption mechanisms gave rise to a charge density in the surface layers required for CE and enabled material expulsion in the form of nanoparticles. Trenches and holes micromachined by the picosecond laser exhibited clean and smooth edges and non-thermal ablation mode for pulse repetition rates less than 250 kHz. However carbonaceous material and recast layer were noted in the machined region when the pulse repetition rate was increased 500 kHz that could be attributed to the interaction between air plasma and micro/nanoparticles. A comparison with femtosecond pulsed lasers shows the promise that picosecond lasers are more efficient and cost effective tools for creating sensor diaphragms and via holes in 4H-SiC.     

Optical and ultrasonic monitoring of femtosecond laser filamentation in fused silica

Millimeter-long filaments and accompanying luminous plasma and defect channels created in fused silica (FS) by single focused femtosecond laser pulses with supercritical powers were probed in situ using optical imaging and contact ultrasonic techniques. Above the threshold pulse energy E_opt = 5 μJ corresponding to a few megawatt power levels pulses collapse due to self-focusing, producing channels filled by electron-hole plasma and luminescent defects, and exhibits predominantly compressive pressure transients. Analysis of the optical and ultrasonic response versus the laser pulse energy suggests that filamentary pulse propagation in the channels occurs with considerable dissipation of about ∼10 cm⁻¹. The predominant ionization mechanism is most likely associated with avalanche ionization, while the main mechanism of optical absorption is free-carrier absorption via inverse Bremsstrahlung interaction with the polar lattice.     

Carbon monoxide laser emitting nanosecond pulses with 10 MHz repetition rate

Actively mode-locked electron-beam-sustained-discharge CO laser producing a train of ∼5-15 ns (FWHM) spikes following with repetition rate 10 MHz for both single-line and multiline mode of operation in the mid-IR range of ∼5 μm was experimentally studied. Total laser pulse duration was ∼0.5 ms for both mode-locked and free-running laser. Specific output energy in multiline CO laser mode of operation was up to 20 Jl⁻¹ Amagat⁻¹ and the laser efficiency up to 3.5%. The active mode-locking was achieved for single-line CO laser mode of operation in spectral range 5.2-5.3 μm. This sort of radiation can be used for pumping an optical parametric amplifier for optical stochastic cooling in relativistic heavy ion collider, for laser ablation, and for studying vibrational and rotational relaxation of CO and NO molecules.     

Pulsed inductive discharge CO2 laser

A pulsed inductive discharge CO₂ laser with a wavelength of 10.6 μm has been created for the first time. The excitation system of a cylindrical pulsed inductive discharge (pulsed inductively coupled plasma) in the gas mixture of CO₂:N₂:He was developed. The temporal and energy parameters of the laser radiation were investigated. The maximum inductive discharge CO₂ laser radiation energy of 104 mJ was achieved. An average power of 3.2 W was obtained at laser generation energy of 65 mJ and pulse repetition rate of 50 Hz. In the cross-section, the laser radiation had the ring shape with an external diameter of 34 mm and thickness of 4-5 mm. The measured divergence of laser radiation was 12 mrad.     

Saturated X-ray lasing in Ni-like Sn at 11.9 nm using the GRIP scheme

We report on gain-saturated operation of the 11.9 nm X-ray lasing line in Ni-like Sn using the grazing-incidence pumping scheme (GRIP). The experiments were done with 2-ps duration pump pulses and energies up to 5 J. Strong gain saturation with multi-microjoule output was measured for the Sn laser at a grazing angle of 30° and a pump pulse energy of 3 J. This was achieved with a 4.5%, 2-ps duration prepulse 2.4 ns ahead of the main pulse and also incident at grazing incidence. Increasing laser output was observed at GRIP angles up to 45°. At this angle, the minimum energy required for saturated lasing was determined as ∼2 J.     

Surface damage morphology investigations of silicon under millisecond laser irradiation

The surface damage morphologies of single crystal silicon induced by 1064 nm millisecond Nd:YAG laser are investigated. After irradiation, the damage morphologies of silicon are inspected by optical microscope (OM) and atomic force microscope (AFM). The plasma emission spectra of the damaged region are detected by the spectrometer. It is shown that surface oxidation and nitridation have occurred during the interaction of millisecond laser with silicon. In addition, the damage morphologies induced by 2 ms and 10 ns pulse width laser are compared. The damage morphology obtained by 2 ms laser is an evident crater. Three types of damage morphologies are formed at different laser energy densities. The circular concentric ripples are found surrounding the rim of the crater. The spacing of the ripples is 15 ± 5 μm. Two types of cracks are observed: linear crack and circular crack. The linear crack is observed in the center of the damaged region which propagates to the periphery of the damaged region. The circular crack is located at the rim of the crater. The damage morphology induced by 10 ns laser is surface layer damage. The periodic linear waves are generated due to the interference between the incident beam and the scattered beam. The spacing of the ripples is 1.54 μm which is close to the incident laser wavelength 1.064 μm. The linear crack is located at the center of the damaged region. Furthermore, for the same laser energy density, the dimension of the damaged region and the crater depth induced by 2 ms laser are greater than that of 10 ns laser. It indicates that the damage mechanism under millisecond pulse laser irradiation is strongly different from the case of nanosecond pulse laser.     

Injection-seeded Tm:YAG laser at room temperature

The solid-state, tunable, narrowband, high pulse energy and high reliability lasers are attractive source for LIDAR system. In this paper, we demonstrated a diode pumped injection-seeded 2 μm Tm:YAG laser. By inserting two F-P etalons into the laser cavity, linear-polarized single-frequency seed-laser was achieved at a wavelength of 2013 nm, with a maximum output power of 60 mW. Long-term and short-term frequency stability for the seed-laser were 1.27 × 10^− 7 and 97 Hz/μs, respectively. High power Q-switched laser was operated using a bowtie cavity, the bidirectional output of which was favorable for the injection-seeded. After injecting the seed-laser to the power-laser, single-frequency, nearly transform-limited pulsed 2 μm laser was obtained. As much as 2.0 mJ output energy was achieved at an operating repetition rate of 15 Hz, with a pulse width of 356.2 ns.     

IR laser ablation of doped poly(methyl methacrylate)

We investigate the TEA CO₂ laser ablation of films of poly(methyl methacrylate), PMMA, with average M_W 2.5, 120 and 996 kDa doped with photosensitive compounds iodo-naphthalene (NapI) and iodo-phenanthrene (PhenI) by examining the induced morphological and physicochemical modifications. The films casted on CaF₂ substrates were irradiated with a pulsed CO₂ laser (10P(20) line at 10.59 μm) in resonance with vibrational modes of PMMA and of the dopants at fluences up to 6 J/cm². Laser induced fluorescence probing of photoproducts in a pump and probe configuration is carried out at 266 nm. Formation of naphthalene (NapH) and phenanthrene (PhenH) is observed in NapI and PhenI doped PMMA, respectively, with relatively higher yields in high M_W polymer, in similarity with results obtained previously upon irradiation in the UV at 248 nm. Above threshold, formation of photoproducts is nearly complete after 200 ms. As established via optical microscopy, bubbles are formed in the irradiated areas with sizes that depend on polymer M_W and filaments are observed to be ejected out of the irradiated volume in the samples made with high M_W polymer. The implications of these results for the mechanisms of polymer IR laser ablation are discussed and compared with UV range studies.     

Characteristics of a flowing He-SrCl2 vapor laser

An experimental investigation on the characteristics of a flowing He-SrCl₂ vapor laser is carried out. The output power as a function of the SrCl₂ vapor pressure is presented by calculating the radial temperature distribution of the discharge tube. The temporal dependences of the discharge current pulse on the laser pulses at 1 μm, ∼ 3 μm and 6.45 μm lines in strontium atom and ion, as well as the spot modes of the laser beam are measured and analyzed under different laser output power.     

Gain-saturated Ni-like antimony laser at 11.4 nm in grazing-incidence pumping geometry

We report on gain-saturated operation of the 4d → 4p, J = 0-1, 11.4 nm soft-X-ray laser line in Ni-like antimony (Sb) at a pump energy of only 2.5 J. The driving laser used was a 1054 nm Nd:glass CPA laser system with a pulse duration of 7 ps (FWHM). The pump beam was focused with a tilted on-axis parabolic mirror in a grazing-incidence (GRIP) pumping configuration at an incidence angle of 45°. A fraction of 2.8% of the pump energy (∼70 mJ) was used for the prepulse, which was propagated along the same beam line as the main pulse and arrived at the target 4.4 ns before the main pulse.     

Surface modification and submicron structure of carbon fibers through high current pulse

This paper investigated the behavior of carbon fibers subjected to a ∼20 kA, ∼5 μs high current pulse. It was found that the broken fibers and submicron particles were generated by electrical explosion process. After high current pulsed discharge, the fiber diameter increased significantly, from 5-7 μm to ∼13 μm. Also, the surface rupture of carbon fibers with valleys of hundreds of nanometers was observed. Most notably, the submicron particles appeared with two typical shapes (near-sphere and square). The high current pulsed discharge of carbon fibers can be divided into three stages, namely, heating stage, phase change stage, and explosion stage. Indeed, the electrical explosion process occurred in the last stage of ∼200 ns. The nature behind these results is closely related to the plasma development during the explosion process. The plasma expansion due to a large plasma thermal stress leads to the incomplete explosion. In the explosion stage, the current passing through the fibers exhibited a huge fluctuation, indicating plasma instabilities. Finally, the physical mechanisms, how to affect the surface morphology of carbon fibers, are presented.