混合场中 (Pr1－yNdy)2/3Sr1/3MnO3体系磁转变行为研究

对(Pr1-yNdy)2/3Sr1/3MnO3(y=2/8,4/8,6/8)体系在42K—300K温度范围内混合场（即交流驱动场Hac与附加直流磁场H dc的叠加）下的磁转变行为进行了系统的实验研究. 结果表明，随着外加直流磁场强 度的增大，样品的直流磁化强度增大，交流磁化率逐渐减小；在混合场作用下，磁转变温度 （居里温度）附近样品交流磁化率的实部出现一个特征的尖峰. 对于(Pr1-yNdy)2/3Sr1/3MnO3体系，随着Nd掺杂量的增加，交流磁化率实部 的相对变化 (Eχ′=Δχ′/χ′dc)的峰值对应的温度降低，这一点与该系 统的磁电阻的变化规律一致. 对锰氧化物体系在混合场中的磁转变现象进行了讨论. 关键词： 锰氧化物 混合场 磁特性     

交流阻抗谱方法对钇稳定氧化锆晶界电性能的研究

采用交流阻抗谱技术测量了多晶钇稳定的氧化锆固体电解质的晶界离子电导率,并根据砖层模型估算了多晶陶瓷样品的晶界体积分数,分析了晶界体积分数与电性能的关系.     

Nd1.85Ce0.15 CuO4-δ单晶c-轴方向电阻的低场行为

采用自助熔剂缓冷法成功地生长出了Nd1.85Ce0.15CuO4-δ单晶,其零场下零电阻温度约为21K.在0-0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线.结果显示磁场平行和垂直样品表面时的转变温度Tp随磁场的变化均服从H=H0(1-Tp(h)/Tp(0))2关系.0.5T不同角度下的转变温度Tp符合有效质量模型,即Tp∝H1/12(cos2θ+sin2θ/γ2)1/4.该单晶的各向异性因子γ约为45.     

巨磁阻抗效应实验研究

利用物理实验室中常见的设备,搭建了一组巨磁阻抗效应实验装置,测量了在不同轴向外磁场及不同频率下钴基非晶态软磁合金细丝的阻抗.阻抗实部虚部均随外磁场增大迅速减小,而随频率增大缓慢增大.与交流阻抗的电磁理论比较,该实验结果与理论一致.实验观察到在40 MHz的频率、10 mT外磁场中阻抗变化达80%.根据数据和理论公式拟合,发现材料复磁导率随磁场强度增大迅速减小.     

KNb1-xMgxO3-δ的高温高压合成及输运性质研究

采用高温高压法制备了KNb1-xMgxO3-δ (x=0.0～0.3)氧离子导电材料,使用XRD、TG-DTA及交流复阻抗谱对样品的结构和离子导电性进行了表征.实验结果表明,高压降低了合成温度,合成的KNb1-xMgxO3-δ系列固溶体与其母体 KNbO3一样都为正交钙钛矿结构,晶胞参数随掺杂量的增加而略微增大.固溶体KNb1-xMgxO3- δ具有离子导电特征,通过拟合阻抗谱数据获得了该材料晶粒电导、晶界电导和体电导率与温度的关系.样品的晶界电阻较高,晶界效应十分明显,离子跳跃传导可能在其输运机制中占据主导地位.在x=0.1附近,电导率达到最大值,700℃时为1.2×10-3S* cm-1.     

Bi0.5Ba0.5FeO3 陶瓷的电性能及阻抗分析

以传统的固相反应法制备了Bi_0.5Ba_0.5FeO₃陶瓷,并采用X射线衍射仪、扫描电子显微镜、直流阻温测试仪和交流阻抗分析仪测试了Bi_0.5Ba_0.5FeO₃陶瓷的微结构和电性能.分析结果表明:Bi_0.5Ba_0.5FeO₃陶瓷具有立方钙钛矿结构,颗粒尺寸约1.0 μm;在16—280 ℃范围内,Bi_0.5Ba_0.5FeO₃陶瓷表现出明显的负温度系数热敏效应,其热敏常数、活化能分别为6490 K及0.558 eV;介电温谱揭示,在280 ℃下Bi_0.5Ba_0.5FeO₃陶瓷材料没有出现相变行为.对于交流阻抗谱,采用3个串联的RQ(R与Q为并联)等效部件来拟合分析,拟合结果表明拟合数据与实验数据高度匹配,且这3个等效部件分别代表晶界、晶粒和晶壳的贡献.3个部件中,晶粒对陶瓷电阻阻值的影响最大,晶壳贡献次之,晶界最小,且3个部件电阻值都显示出负温度系数效应.在25—115 ℃范围内,电学模量虚部峰频与阻抗虚部峰频始终不匹配,意味着Bi_0.5Ba_0.5FeO₃陶瓷体内部一直表现出局域导电机理. 关键词： 0.5Ba_0.5FeO₃陶瓷')" href="#">Bi_0.5Ba_0.5FeO₃陶瓷 电性能 阻抗分析     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

(Pr,La)_(2-x)Ce_xCuO_4单晶的极低温热传导行为

本文研究了Pr1.27La0.7Ce0.03CuO4和Pr2CuO4单晶的低温热导率行为,在极低温下热导率(κ)随磁场的变化显示出低场下的凹陷和高场下的平台现象.这种现象很可能是顺磁离子散射声子的作用引起的,在Pr2CuO4单晶的比热测量结果中,肖特基峰随磁场的变化关系表明样品中确实含有少量的顺磁离子,并且其零场下基态能级存在劈裂.因此,这些顺磁离子很可能是Pr4+离子.该结果表明铜氧化合物高温超导体中声子与自旋的强烈耦合作用.     

KNb_(1-x)Mg_xO_(3-δ)的高温高压合成及输运性质研究

采用高温高压法制备了KNb1-xMgxO3 -δ(x =0 .0～ 0 .3)氧离子导电材料 ,使用XRD、TG-DTA及交流复阻抗谱对样品的结构和离子导电性进行了表征。实验结果表明 ,高压降低了合成温度 ,合成的KNb1-xMgxO3 -δ系列固溶体与其母体KNbO3 一样都为正交钙钛矿结构 ,晶胞参数随掺杂量的增加而略微增大。固溶体KNb1-xMgxO3 -δ具有离子导电特征 ,通过拟合阻抗谱数据获得了该材料晶粒电导、晶界电导和体电导率与温度的关系。样品的晶界电阻较高 ,晶界效应十分明显 ,离子跳跃传导可能在其输运机制中占据主导地位。在x =0 .1附近 ,电导率达到最大值 ,70 0℃时为 1.2× 10 - 3 S·cm- 1。     

ZnO-Bi2O3系压敏陶瓷的导电过程与等效势垒高度

研究了ZnO-Bi₂O₃系压敏陶瓷等效势垒高度_eff随着归一化电压的变化规律，发现等效势垒高度_eff随着归一化电压的增加先逐渐增大，达到最大值后持续下降.由于在外加电压作用下反偏势垒高度高于正偏势垒高度，等效势垒高度_eff主要取决于反偏势垒.因此，这种变化规律说明了ZnO压敏陶瓷晶界的导电过程可能存在三个阶段.在低归一化电压区，晶界区域中的电子从正偏势垒区注入到晶界无序层的速率低于电子从晶界无序 关键词： ZnO压敏陶瓷 归一化电压 等效势垒高度 导电过程     

Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt异质结电致电阻效应的改善

采用脉冲激光沉积技术制备了Ti/Pr_0.7Ca_0.3MnO₃/Pt和Ti/Pr_0.7Ca_0.3MnO₃/La_0.67Sr_0.33MnO₃/Pt异质结并研究了La_0.67Sr_0.33MnO₃功能插层对异质结电致电阻特性的影响. 实验结果表明La_0.67Sr_0.33MnO₃功能层的引入有效提高了器件的电阻转变特性,尤其是电阻转变率和疲劳性得到了极大的改善. 对La_0.67Sr_0.33MnO₃插层改善电致电阻转变特性的机理进行了定性的分析. 关键词： 电致电阻效应 电阻转变比率 疲劳特性     

点接触金属/Pr$lt;sub$gt;0.7$lt;/sub$gt;Ca$lt;sub$gt;0.3$lt;/sub$gt;MnO$lt;sub$gt;3$lt;/sub$gt;/Pt结构稳定的低电流电阻开关特性

利用自主开发的导电原子力显微镜控制Pt,W探针构成点接触金属/Pr_0.7Ca_0.3MnO₃（PCMO）/Pt三明治结构,对其电流-电压（I-V）及脉冲诱导电阻开关（EPIR）特性进行了研究.研究发现,在10 nA限流下两种电极对应结构的I-V都表现出相当稳定的双极性电阻开关特性,以及大于100的电阻开关比.进一步测试发现,点接触W/PCMO/Pt器件具有在10 nA限流下稳定的EPIR特性以及100 pA限流下重复的双极性电阻开关特性.此电流比已报道的电流低3个数量级,表明此结构在低功耗存储器件方面的潜在应用.通过对比样品不同位置、不同限流、不同接触面积点接触Pt/PCMO/Pt的I-V回滞特性,把点接触器件在低电流下稳定、显著的电阻开关效应归结于小的器件面积导致强的局域电场加强了O离子迁移效应. 关键词： 脉冲诱导电阻开关 电场下氧离子迁移 电阻开关     

直接利用磁场和温度精确确定磁性材料La0.67Ca0.33MnO3和Pr0.7Sr0.3MnO3的电阻率

电阻率是研究钙钛矿结构锰氧化物磁性材料的重要参数之一,它与温度和外加磁场有密切关系.本文的工作之一是寻找合适的方法,确定在金属-绝缘体转换过程中,不同磁场情况下,材料La0.67Ca0.33MnO3和Pr0.7Sr0.3MnO3的电阻率随温度变化的数学解析关系.通过非线性数值拟合,找到了满足这一关系的函数为双曲正切修正的高斯函数.同时,获得金属-绝缘体转换时居里温度Tc满足的微分方程以及与该温度对应的最大电阻率ρmax.本文的另一个工作是寻求最大电阻率ρmax和磁场之间的函数关系,发现采用玻尔兹曼函数可以精确反映两者之间的数学联系.两项工作得到的数学拟合结果与实验数据之间的最小相关系数为0.998,最大平均相对误差4.35％,说明数据拟合的结果与实验结果十分符合.     

Nd0.7Sr0.3MnO3陶瓷EPIR效应的起源

用两线法和四线法对球磨合成后热处理的Nd_0.7Sr_0.3MnO₃陶瓷样品的电脉冲诱导电阻转变(EPIR)效应进行了测试.结果表明:在Nd_0.7Sr_0.3MnO₃块体中用四线法测得的I-V曲线为非线性,说明Nd_0.7Sr_0.3MnO₃样品在晶(相)界处存在空间电荷层和界面电阻.但用四线法测量EPIR效应时,没有EPIR效应发生,表明晶(相)界处的空间电荷层和肖特基势垒不能产生EPIR效应;对同一样品采用直流两线法测量,其I-V曲线也为非线性,但却发生明显的EPIR效应.说明在Nd_0.7Sr_0.3MnO₃陶瓷中发现的EPIR效应起源于样品与电极之间的接触界面,块体内的晶(相)界处虽能产生相似I-V特性,但却不能发生EPIR效应. 关键词： 电脉冲诱导电阻转变(EPIR) 亚锰酸盐 空间电荷层 I-V非线性')" href="#">I-V非线性     

Improvement of refrigerant capacity of La0.7Ca0.3MnO3 material with a few percent Co doping

The influence of first and second order magnetic phase transitions on the magnetocaloric effect (MCE) and refrigerant capacity or relative cooling power (RCP) of La_0.7Ca_0.3MnO₃ and La_0.7Ca_0.3Mn_0.95Co_0.05O₃ materials has been investigated. Large low-field-induced magnetic entropy changes are observed in La_0.7Ca_0.3MnO₃ and La_0.7Ca_0.3Mn_0.95Co_0.05O₃ materials. The La_0.7Ca_0.3MnO₃ material experiences a large entropy change with a first-order magnetic phase transition at the Curie temperature, T_C. On the other hand, La_0.7Ca_0.3Mn_0.95Co_0.05O₃ displays a smaller entropy change with a second order phase transition. While a first-order magnetic transition material induces a larger MCE (7.528 J/kg K at 5 T) at T_C, this is limited to a narrow temperature range, resulting in a relatively small RCP (218 J/kg), while the Co-doped second-order magnetic transition material induces a smaller MCE (7.14 J/kg K for 5 T), but it is spread over a broader temperature range, resulting in a larger RCP (308 J/kg). The maximum magnetoresistance (MR, defined as ρ(0)/ρ(H)-1) under a field of 5 T is about 206% and 333% for La_0.7Ca_0.3MnO₃ and La_0.7Ca_0.3Mn_0.95Co_0.05O₃, respectively. The refrigeration capacity (RCP) is enhanced in La_0.7Ca_0.3Mn_0.95Co_0.05O₃ (by about 41%) due to small changes from Co doping. The magnetocaloric features of these materials at lower magnetic fields (MCE=3.163 for La_0.7Ca_0.3Mn_0.95Co_0.05O₃ and 4.63 J/kg K for La_0.7Ca_0.3MnO₃ at 1 T), and the high RCP and MR can provide some ideas for exploring novel magnetic refrigerants that can operate with permanent magnets rather than superconducting ones as the magnetic field source.     

Size of the interpolated cation and hole carrier density: two key parameters for the optimisation of colossal magnetoresistive properties of Pr-based manganites

The exploration of the magnetic and transport properties of four series of manganese perovskites, Pr_0.7Ca_0.34?xA_xMnO_3?δ (A=Sr, Ba), Pr_0.7?xLa_xCa_0.3 MnO_3?δ and Pr_0.66Ca_0.34?x Sr_xMnO_3?δ has allowed four phases with colossal magnetoresistive (CMR) properties to be isolated: Pr_0.7Ca_0.25Sr_0.025MnO_3?δ and Pr_0.66Ca_0.26Sr_0.08MnO_3?δ that exhibit a variation of resistance of 2.5. 10⁷% and 10⁹% at μ₀ H=5 T for T=88 K and 50 K respectively, Pr_0.58La_0.12Ca_0.3 MnO_3?δ that exhibits a variation of 6.10⁶% for μ₀ H=5 T at T=80 K and Pr_0.7Ba_0.025Ca_0.275MnO_3?δ for which a resistance variation of 5.10⁹%, at T=50 K, for μ₀ H=5 T is evidenced. for each compound of this series except the barium phase, one observes that the temperature T_max, which corresponds to the resistance maximum on the R(T) curves in zero magnetic field, increases dramatically as the mean size of the interpolated cations increases, and that the CMR effect correlatively decreases dramatically. The comparison of the two series Pr_0.7Ca_0.3?xSr_xMnO_3?δ and Pr_0.66Ca_0.34?xSr_xMnO_3?δ shows also the crucial role of the hole carrier density: for a same mean ionic radius of the interpolated cation T_max is decreased of about 50 K by introducing 0.034 hole per Mn mole.     

The influence of the O–O isotope substitution on spin dynamics of (La0.25Pr0.75)0.7Ca0.3MnO3: La NMR data

The ¹³⁹La NMR spectra and spin–spin relaxation times have been measured for the ¹⁶O and ¹⁸O isotope-substituted manganite (La_0.25Pr_0.75)_0.7Ca_0.3MnO₃ in the external magnetic field of 5 T. The NMR signal wipe-out has been observed in the ¹⁸O-enriched sample in the charge-ordered state. This phenomenon is connected with a sharp increase in the spin–spin relaxation rate. The great isotope-effect observed provides a clear evidence of an essential role of oxygen motion in controlling the long-range magnetic order in manganites.     

Percolative transport in the vicinity of charge-order ferromagnetic transition in a hole-doped manganite

We report measurements of non-linear charge transport in epitaxial (La_1−x Pr _x )_0.7Ca_0.3MnO₃ thin films fabricated on (100) oriented SrTiO₃ single crystals by pulsed laser deposition. The end members of this series, namely Pr_0.7Ca_0.3MnO₃ and La_0.7Ca_0.3MnO₃ are canonical charge-ordered (CO) and ferromagnetic manganites, respectively. The onset of the CO state in Pr_0.7Ca_0.3MnO₃ is manifested by a pronounced insulating behavior below ∼ 200 K. The CO state remains stable even when a large (∼ 2×10⁵ V/cm) electric field is applied across the thin film samples. However, on substitution of Pr with La, a crossover from the highly resistive CO state to a state of metallic character is observed at relatively low electric fields. The current-voltage characteristics of the samples at low temperatures show hysteretic and history dependent effects. The electric field driven charge transport in the system is modelled on the basis of an inhomogeneous medium consisting of ferromagnetic metallic clusters dispersed in a CO background.     

Size of the interpolated cation and hole carrier density: two key parameters for the optimisation of colossal magnetoresistive properties of Pr-based manganites

The exploration of the magnetic and transport properties of four series of manganese perovskites, Pr_0.7Ca_0.34−xA_xMnO_3−δ (A=Sr, Ba), Pr_0.7−xLa_xCa_0.3 MnO_3−δ and Pr_0.66Ca_0.34−x Sr_xMnO_3−δ has allowed four phases with colossal magnetoresistive (CMR) properties to be isolated: Pr_0.7Ca_0.25Sr_0.025MnO_3−δ and Pr_0.66Ca_0.26Sr_0.08MnO_3−δ that exhibit a variation of resistance of 2.5. 10⁷% and 10⁹% at μ₀ H=5 T for T=88 K and 50 K respectively, Pr_0.58La_0.12Ca_0.3 MnO_3−δ that exhibits a variation of 6.10⁶% for μ₀ H=5 T at T=80 K and Pr_0.7Ba_0.025Ca_0.275MnO_3−δ for which a resistance variation of 5.10⁹%, at T=50 K, for μ₀ H=5 T is evidenced. for each compound of this series except the barium phase, one observes that the temperature T_max, which corresponds to the resistance maximum on the R(T) curves in zero magnetic field, increases dramatically as the mean size of the interpolated cations increases, and that the CMR effect correlatively decreases dramatically. The comparison of the two series Pr_0.7Ca_0.3−xSr_xMnO_3−δ and Pr_0.66Ca_0.34−xSr_xMnO_3−δ shows also the crucial role of the hole carrier density: for a same mean ionic radius of the interpolated cation T_max is decreased of about 50 K by introducing 0.034 hole per Mn mole.     

Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 Thin Films

Carrier injection performed in Pro.7 Cao.aMnOa junctions demonstrate resistance switching （RS） characteristic with dramatic changes in both resistances and interface barriers, which suggests a charge carrier self-trapping model in strongly correlated electronic framework. Un-stable RS behaviour without electric fields in epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 （PCSMO） films shows dependences on insulator-metal transition temperature, which indicates that RS process is really related to the intrinsic property of carriers. The switched resistance of epitaxial PCSMO films also depends on the amount of current pulses, which shouM be another evidence of the carrier self-trapping model, similarly to the dependence on the amount of self-trapped charge carriers.