Effect of Terraces at the Interface on the Structural and Physical Properties of La_(0.8)Sr_(0.2)MnO_3 Thin Films

Employing atomic force microscopy,transmission electron microscopy and the second harmonic generation technique,we carefully explore the structural properties of 6-unit-cell-thick La_(0.8)Sr_(0.2)MnO_3 films grown on SrTiO_3 with atomically flat TiO_2-terminated terraces on the surface.The results clearly demonstrate that the terraces on the surface of TiO_2-terminated SrTiO_3 can improve the layer-by-layer epitaxial growth of the manganite films,which results in uniform film coverage at the beginning of growth and thus reduces the substrate-induced disorder at or near the interface.Comparing the magnetic and transport properties of La_(0.8)Sr_(0.2)MnO_3 films with the thicknesses varying from 6 unit cells to 80 unit cells grown respectively on as-received SrTiO_3 and TiO_2-terminated SrTiO_3,it is found that these atomically flat terraces on the surface of TiO_2-terminated SrTiO_3 can greatly enhance the Curie temperature and conductivities of the ultrathin La_(0.8)Sr_(0.2)MnO_3 films with thickness less than 50 unit cells,while no obvious difference is detected in the magnetic and transport properties of the 80unit-cell thick films.     

Magnetic Anisotropy Induced by Orbital Occupation States in La_(0.67)Sr_(0.33)MnO_3 Films

Interface engineering is an effective and feasible method to regulate the magnetic anisotropy of films by altering interfacial states between films.Using the technique of pulsed laser deposition,we prepared La_(0.67)Sr_(0.33)MnO_3(LSMO) and La_(0.67)Sr_(0.33)MnO_3/SrCoO_(2.5)(LSMO/SCO) films on(110)-oriented La_(0.3)Sr_(0.7)Al_(0.65)Ta_(0.35)O_3 substrates.By covering the SCO film above the LSMO film,we transformed the easy magnetization axis of LSMO from the [001] axis to the [110] axis in the film plane.Based on statistical analyses,we find that the corresponding Mn-Mn ionic distances are different in the two types of LSMO films,causing different distortions of Mn-O octahedron in LSMO.In addition,it also induces diverse electronic occupation states in Mn~(3+) ions.The eg electron of Mn~(3+)occupies 3 z~2-r~2 and x~2-y~2 orbitals in the LSMO and LSMO/SCO,respectively.We conclude that the electronic spin reorientation leads to the transformation of the easy magnetization axis in the LSMO films.     

成分调制的La1－xSrxMnO3复合隧道结

利用磁控溅射和Sr成分的调制以及原位热处理方法，在10mm×10mm大小的(001) 取向SrTiO_３单晶衬底上制备出三明治结构为La_0.7Sr_0.3MnO３(100nm)/La_0.96Sr_0.04MnO_３ (5nm)/ La0.7Sr_0.3MnO_３ (100nm) 的隧道结外延薄膜，然后再次 利用磁控溅射方法，在三层单晶膜上方继续沉积Ir_２２Mn_７８(15n m)/Ni_７９Fe_２１(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝 光和Ar离子束刻蚀等微加工技术，制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形L a_１-xSr_xMnO_３成分调制的复合磁性隧道结.在4.2K和 外加磁场8 T的测试下，La_１-xSr_xMnO_３成分调制的复 合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%, 直接从实验上证实了铁磁性La_{0.7Sr0.3MnO３金属氧化物的自旋极化率（97%）可接近100％，具 有很好的半金属性质. 关键词： １-x}Sr_xMnO_３')" href="#">La_１-xSr_xMnO_３ 半金属 成分调制 复合磁性隧道 结 隧穿磁电阻     

热致变色材料辐射和光学特性研究

采用固相反应法制备了相变温度接近室温的热致变色材料,研究了不同掺杂元素和掺杂浓度对热致变色材料辐射和光学特性的影响,并利用K-K分析模型导出了热致变色材料的光学常数。结果表明:热致变色材料LCSMO和LSMO(x=0.175)的发射率在相变温度附近出现剧烈变化,并且光常数在很大的频域范围内可自主调制。     

Effects of growing conditions on the electric and magnetic properties of strained La2/3Sr1/3MnO3 thin films

We investigate the growing condition dependences of magnetic and electric properties of the La_2/3Sr_1/3MnO₃ thin films grown on SrTiO₃（001） substrates.With reducing the film thickness and growth pressure,the Curie temperature（T_c）drops off,and the magnetism and metallicity are suppressed.At an appropriate deposition temperature,we can obtain the best texture and remarkably enhance the magnetic and electrical properties.However,the resistivity of film cannot be modulated by changing the dc current and green light intensity.This result may be induced by the coherent strains in the epitaxially grown film due to its lattice mismatching that of the SrTiO₃ substrate.Furthermore,we show that the relations between the magnetism and the resistivity for the typical films with different thickness values.For the 13.4-nm-thick film,the R-T curve presents two transition behaviors:insulator-to-metal and metal-to-insulator in the cooling process:the former corresponds to magnetic transition,and the later correlates with thermal excitation conduction.     

Raman光谱研究厚度对La0.9Sr0.1MnO3/Si薄膜结构的影响

通过溶胶-凝胶旋涂方法结合后退火工艺在Si（100）上制备了不同厚度的La_0.9Sr_0.1MnO₃（LSMO）薄膜,利用X射线衍射（XRD）和共焦显微拉曼散射（Raman）研究了LSMO/Si（100）薄膜的微结构．研究结果表明90 nm厚的LSMO薄膜具有正交相结构,当厚度大于150 nm时,薄膜具有菱方相结构. 150 nm厚的薄膜的Raman图谱中,490 cm^-1和602 cm^-1正交结构 关键词： 薄膜 1-xSr_xMnO₃')" href="#">La_1-xSr_xMnO₃ 共焦显微拉曼 微结构     

Abundant photoelectronic behaviors of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3 junctions

Temperature dependence on rectifying and photoelectronic properties of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3(LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.     

Modulation of ultrafast laser-induced magnetization precession in BiFeO_3-coated La_(0.67)Sr_(0.33)MnO_3 thin films

The ultrafast laser-excited magnetization dynamics of ferromagnetic(FM) La_(0.67)Sr_(0.33)MnO_3(LSMO) thin films with BiFeO_3(BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique.Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect.The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films,which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.     

Antiferromagnetic interlayer coupling of (111)-oriented La_(0.67)Sr_(0.33)MnO_3/SrRuO_3 superlattices

We report a strong antiferromagnetic(AFM) interlayer coupling in ferromagnetic La_(0.67)Sr_(0.33)MnO_3/SrRuO_3(LSMO/SRO) superlattices grown on(111)-oriented SrTiO_3 substrate. Unlike the(001) superlattices for which the spin alignment between LSMO and SRO is antiparallel in the in-plane direction and parallel in the out-of-plane direction, the antiparallel alignment is observed along both the in-plane and out-of-plane directions in the present sample. The low temperature hysteresis loop demonstrates two-step magnetic processes, indicating the coexistence of magnetically soft and hard components. Moreover, an inverted hysteresis loop was observed. Exchange bias tuned by the temperature and cooling field was also investigated, and positive as well as negative exchange bias was observed at the same temperature with the variation of the cooling field. A very large exchange field(H_(EB)) was observed and both magnitude and sign of the H_(EB)depend on the cooling field, which can be attributed to an interplay of Zeeman energy and AFM coupling energy at the interfaces. The present work shows the great potential of tuning a spin texture through interfacial engineering for the complex oxides whose spin state is jointly determined by strongly competing mechanisms.     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

La2/3Ca1/3MnO3超薄膜应力弛豫过程及性质研究

锰氧化物庞磁电阻材料超薄膜的应力弛豫特性的研究对理解这一强关联体系的特性及应用都具有重要的意义.为此,我们研究了不同温度退火的La2/3Ca1/3MnO3/LaAlO3超薄膜的形貌、结构、电输运特性等.发现退火导致的应力弛豫对薄膜的性质有很强的调制作用,其电输运性质及结构呈现明显的阶段性变化过程,我们提出了一个高温应力弛豫模型对所观察到的实验现象进行了解释.实验中观察到的规则的自相似网状纳米结构,显示了薄膜应力弛豫过程中自组织生长的分形特征.     

Epitaxial strain-induced magnetic anisotropy in Sm3Fe5O12 thin films grown by pulsed laser deposition

Sm₃Fe₅O₁₂ thin films of various thicknesses were grown on a (0 0 1)-oriented Gd₃Ga₅O₁₂ substrate by pulsed laser deposition. The crystal structure of the films was strongly dependent on film thickness. The lattice was strained for thinner films due to a lattice mismatch between the film and substrate. This lattice strain was relaxed when the film thickness exceeded a critical thickness of around 660 Å. It is suggested that the epitaxial strain induces uniaxial magnetic anisotropy with an out-of-plane magnetic easy axis.     

The structure of strained perovskite KTaO(3) thin films prepared by pulsed laser deposition

Epitaxial perovskite potassium tantalate (KTaO(3)) films with thicknesses of 7.4-36?nm are grown on SrTiO(3)(001) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis reveals evolution of lattice strain with increasing film thickness. A biaxial compressive in-plane strain as large as -?2.1% is obtained in the 7.4?nm-thick film. A bi-layer microstructure is detected in the 18?nm-thick film, suggesting the possibility for an abrupt strain relaxation.     

Effects of Si surficial structure on transport properties of La_(2/3)Sr_(1/3)MnO_3 films

La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.     

Influence of the thickness on structural,magnetic and electrical properties of La0.7Ca0.3MnO3 thin film

We have studied the effect of thickness on the structural, magnetic and electrical properties of La_0.7Ca_0.3MnO₃ thin films prepared by pulsed laser deposition method using X-ray diffraction, electrical transport, magneto-transport and dc magnetization. X-ray diffraction pattern reflects that all films have c-axis epitaxial growth on LaAlO₃ substrate. The decrease in out-of-plane cell parameter specifies a progressive relaxation of in the plane compressive strain as the film thickness is increases. From the dc magnetization measurements, it is observed that ferromagnetic to paramagnetic transition temperature increases with increase in the film thickness. Magneto-resistance and temperature coefficient of resistance increases with film thickness and have maximum value near its metal to insulator transition temperature.     

Dependence of magnetic anisotropy of the La0.67Ca0.33MnO3 films on substrate and film thickness

Strain in the La_0.67Ca_0.33MnO₃ films has been tuned by varying substrate and film thickness, and its effects on magnetic anisotropy are studied based on the measurements of isothermal magnetization. Measuring the strain in the films by the out-of-plane lattice parameter (c), we found a strong dependence of the magnetic anisotropy constant (Ku) on strain. Ku decreases linearly from ∼−1.1×10⁶ erg/cm³ for c=0.763 nm to 1.2×10⁶ erg/cm³ for c=0.776 nm, corresponding to a change from tensile strain to compressive strain. Positive Ku signifies a uniaxial anisotropy with the easy axis perpendicular to the film plane, while negative Ku demonstrates an anisotropy of the easy plane character. Smaller or larger c leads a decrease or increase in Ku, which indicates the presence of other effects in addition to those associated with strain. Three distinctive processes for the magnetization are observed along the hard magnetic axis of the films on (001)SrTiO₃, suggesting a possibility of strain relaxation even in ultra-thin films.     

制备压力对La2/3Sr1/3MnO3的磁电阻效应的影响

 研究了制备压力对纳米块状样品La_2/3Sr_1/3MnO₃的结构、磁学和电学性质的影响。结果表明：样品的晶粒尺寸随制备压力的增加而变小，且不同样品的磁电阻效应不同。低场磁电阻效应在整个实验温区都随制备压力的升高而变弱，这主要是由制备压力使样品晶粒界面连接更紧密所导致；T<200 K时，高场磁电阻效应随制备压力的升高而变强，T>200 K时，高场磁电阻效应随制备压力的升高反而变弱，这主要是由制备压力改变样品的晶粒尺寸所引起。     

La0.825Sr0.175MnO3薄膜自旋输运特性研究

本文通过固相反应方法制备了具有钙钛矿结构的稀土掺杂锰氧化物La0.875Sr0.125MnO3(LSMO)块材,并用磁控溅射方法在LaAlO3衬底上生长了厚度为50nm的单晶薄膜.X射线衍射仪分别对LSMO块材和薄膜材料进行分析,表明薄膜和衬底具有相同的钙钛矿结构;通过研究该薄膜光诱导效应和磁场下输运行为,发现其输运性质明显改变,表明外场改变体系的电子自旋输运特性,引起双交换作用减弱和增强,分别导致电阻率的增加和减小.     

Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

The magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50–700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of M_s=298 emu/cm³ and H_c=2540 Oe.     

Off-axis electron holography of manganite-based heterojunctions:Interface potential and charge distribution

The interfacial electrical potentials and charge distributions of two manganite-based heterojunctions, i.e.,La_(0.67)Ca_(0.33)MnO_3/SrTiO_3:0.05 wt% Nb(LCMO/STON) and La_(0.67)Ca_(0.33)MnO_3/LaMnO_3/SrTiO_3:0.05 wt% Nb(simplified as LCMO/LMO/STON), are studied by means of off-axis electron holography in a transmission electron microscope.The influences of buffer layer on the microstructure and magnetic properties of the LCMO films are explored. The results show that when a buffer layer of LaMnO_3 is introduced, the tensile strain between the STON substrate and LCMO film reduces, misfit dislocation density decreases near the interfaces of the heterojunctions, and a positive magnetoresistance is observed. For the LCMO/STON junction, positive and negative charges accumulate near the interface between the substrate and the film. For the LCMO/LMO/STON junction, a complex charge distribution takes place across the interface, where notable negative charges accumulate. The difference between the charge distributions near the interface may shed light on the observed generation of positive magnetoresistance in the junction with a buffer layer.