含随机裂纹网络孔隙材料渗透率的逾渗模型研究

采用逾渗理论对含随机裂纹网络的孔隙材料渗透性进行研究. 开裂孔隙材料渗透率的影响因素包括裂纹网络的几何特征、孔隙材料本体渗透率以及裂纹开度, 本文使用连续区逾渗理论模型建立了渗透率的标度律. 对于裂纹网络的几何特征, 本文基于连续区逾渗理论并考虑裂纹网络的分形特征提出了有限区域内二维随机裂纹网络的连通度定义; 对随机裂纹网络的几何分析表明, 随机裂纹局部团簇效应会降低裂纹网络的整体连通性, 随机裂纹网络的标度指数并非经典逾渗理论给出的固定值, 而是随着网络的分形维数的减小而增大. 本文在网络连通度和主裂纹团的曲折度的基础上, 提出了开裂孔隙材料渗透率标度律的解析表达, K=K₀(K_m,b)(ρ-ρ_c)^μ, 分别考虑了裂纹网络的几何逾渗特征 (ρ-ρ_c)^μ、孔隙材料渗透率K_m 以及裂纹开度比b; 对有限区域含有随机裂纹网络的孔隙材料渗透过程的有限元模拟表明, K₀ 在裂纹逾渗阈值附近与b呈指数关系, 但当裂纹的局部渗透率与K_m比值高于10⁶ 后, 开度比b对渗透率不再有影响.     

Ni0.8Co0.2-SiO2颗粒膜中的Hall效应

对用离子束溅射制备的Ni_0.8Co_0.2-SiO₂颗粒膜的Hall效应进行了研究.当Ni_0.8Co_0.2合金的含量为43vol%时,在9.5×10⁵A/m的外磁场下,样品的室温Hall电阻率达6.3μΩ·cm ,高于普通磁性金属两个数量级以上,还研究了不同NiCo组分样品的电阻率与温度的关系（95—300K）,发现x＜x_c(逾渗组分)时,电阻率与-logT成正比,电阻温度系数为负;当x＜x_c时,逐渐呈现金属性;而当x≈x_c时,为过渡态.还用透射电子显微镜和振动样品磁强计等手段对样品的微结构和磁性进行了对比研究,表明金属-绝缘体颗粒膜中在逾渗阈值附近有较大的Hall效应,这与样品的微结构有密切关系. 关键词：     

楔形薄膜逾渗系统的临界特性

报道一种楔形金属薄膜逾渗系统的制备方法和测量结果,这种新型逾渗系统具有独特的非线性I-V特性和临界规律,从实验中发现:在这一各向异性系统中,普适标度关系仍然成立,分析表明:这些特性是由于该系统中随空间坐标而变化的跳跃电导效应而引起的. 关键词：     

二维孔隙裂隙双重介质逾渗规律研究

在孔隙介质逾渗理论的基础上，将另外一个非常重要的渗透通道——裂隙引入到介质的逾渗研究中，提出了更为普遍的孔隙裂隙双重介质的逾渗研究方法.通过对二维平面孔隙裂隙双重介质的数值计算，得到了孔隙裂隙双重介质三个重要参数：孔隙率，裂隙分形维数、裂隙数量分布初值与逾渗概率的关系，给出了孔隙裂隙双重介质逾渗阈值的数学表达式，揭示了孔隙裂隙双重介质的逾渗规律. 关键词： 孔隙 裂隙 双重介质 逾渗 逾渗阈值     

超晶格相变的逾渗机制

把超晶格相变的哈密顿量写成Ising形式,由Ising模型与键逾渗间的对应关系,得到超晶格相变的短程序参量为P′=1-e^-2J/kT;由Monte-Carlo模拟定出L1₀结构的相变点为P′_bc=0.3436,L1₂结构的相变点为P′_bc=0.4924;建立了P′_bc与相应结构上普通键逾渗阈值P_bc间的关系P′_bcx=P_{b 关键词：}     

楔形金薄膜系统中的反常跳跃电导和隧道效应

采用真空蒸镀方法，利用液体衬底在沉积过程中的线性扩散过程，在玻璃表面制备出斜率仅为10^-5的楔形金薄膜逾渗系统，并用四引线方法测量了从该薄膜系统中得到的均匀无序金薄膜的导电特性.实验结果表明：和通常的平整薄膜逾渗系统相比，该薄膜系统呈现更为强烈的跳跃电导和隧道效应. 关键词： 带状薄膜 跳跃电导 隧道效应     

稀磁体系相变的相界关系

本文将纯键和纯座逾渗的普适关系作了推广,建立了键座混合逾渗的相界关系,并讨论了稀磁体系相变问题,给出了稀磁体系相变的相界关系,与以往文献中所给出的级数展开、有限集团近似,以及数值模拟等方法相比较,本文所给出的关系式简单、直观、物理概念清晰,且较为精确。 关键词：     

随机多孔介质逾渗模型渗透率的临界标度性质

研究了一类非零键渗透率满足均匀分布的随机多孔介质逾渗模型-数值计算了该模型系统渗透率在临界点处的标度指数-结果表明该指数并不能看作是普适常数,而与均匀分布的参数有关-这意味着即使非零键渗透率值的概率密度函数满足负一阶矩存在条件,系统渗透率在逾渗临界点处的标度指数仍然依赖于分布函数的具体参数,并不是常数-这一数值结果与Sahimi对此问题的结论不同- 关键词： 逾渗 随机多孔介质 标度指数 渗透率     

工程陶瓷崩碎损伤的声发射逾渗特征

为研究工程陶瓷崩碎损伤演化过程中的逾渗行为,揭示其损伤机理,以氧化铝陶瓷为研究对象,构建了工程陶瓷崩碎损伤实验系统,建立了基于声发射的逾渗理论模型。通过对崩碎损伤过程中声发射信号分析可得:声发射计数率/能量释放率能实时反映陶瓷崩碎损伤过程中裂纹激活率的逾渗行为;基于声发射累积计数/累积能量的破坏比率反映了损伤累积对材料内部性能的影响,可从损伤积累的角度描述陶瓷崩碎损伤过程中的逾渗行为;声发射持续时间反映了陶瓷崩碎过程中逾渗行为的团簇变化规律。研究结果表明:基于声发射的逾渗理论模型可较好的描述陶瓷崩碎损伤演化过程的逾渗特征。      

(Ba_(1-x)K_x)BiO_3电子结构与超导电性

用第一原理的ＬＤＦ-ＬＭＴＯ-ＡＳＡ超元胞法，模拟由Ｘ射线吸收谱精细结构测定的ＢａＢｉＯ_３中，Ｂｉ有两种价态Ｂｉ^３＋和Ｂｉ^5＋及与之相应的两种不同键长的Ｂｉ—Ｏ八面体，以及Ｋ掺杂对晶体结构的影响．计算了Ｂａ₄Ｂｉ₄Ｏ₁₂，（Ｂａ_３Ｋ）Ｂｉ₄Ｏ₁₂，（ＢａＫ）Ｂｉ₂Ｏ₆，（ＢａＫ_３）Ｂｉ₄Ｏ₁₂，Ｋ₂Ｂｉ₂Ｏ₆（简记为（４０４），（３１４），（１１２），（１３４），（０２２））五种“样本”的电子结构．结果表明，（４０４）和（３１４）分别为Ｅ_g＝１.６ｅＶ及Ｅ_g＝１.５ｅＶ的半导体，其它“样本”为金属．总能的分析表明（１３４）是不稳定的，故溶解极限为ｘ＝０.５．以“取样”方式按伯努利分布确定任意组分各“样本”的概率，进而计算了（Ｂａ_1-xＫ_x）ＢｉＯ_３电子结构随组分的变化．最后用逾渗模型说明了超导转变温度Ｔ_c在ｘ＝０．２５附近的突变 关键词：     

Universal Frequency Dependence of the Hopping AC Conductance in <Emphasis Type="Italic">p</Emphasis>-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime

The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi structures with quantum wells in a wide frequency range (30–1200 MHz). The experimental frequency dependences of the real part of ac conductance σ₁ have been interpreted on the basis of the model presuming hops between localized electronic states belonging to isolated clusters. At high frequencies, dominating clusters are pairs of close states; upon a decrease in frequency, large clusters that merge into an infinite percolation cluster as the frequency tends to zero become important. In this case, the frequency dependences of the ac conductance can be represented by a universal curve. The scaling parameters and their magnetic-field dependence have been determined.     

Random walks on bond percolation clusters: ac hopping conductivity below the threshold

The frequency dependence of the ac hopping conductivity in two and three dimensional lattices with random interruptions is calculated by Monte Carlo simulation of random walks on bond percolation clusters. At low frequencies the real and imaginary parts of the ac conductivity vanish linearly and quadratically with the frequency, respectively. The critical behaviour of the imaginary part of the ac conductivity below the percolation threshold is shown to depend on the long time limit of the mean square displacement of random walksR ² , while the real part depends on the time constant of the system as well.R ² is found to diverge with an exponentu=2- according to the conjecture of Stauffer.     

Selective sublattice dilution in ordered magnetic compounds: A new kind of percolation problem

A magnetic binary system is considered whereA-atoms andB-atoms occupy different sublattices but it is an exchangeJ _AB which is responsible for magnetic ordering. Diluting such a system with nonmagnetic atoms it is natural to treat situations where the dilution probability is different for both sublattices. In particular the extreme cases, where either only theA-sublattice or only theB-sublattice is diluted, is discussed for a variety of lattice structures atT=0. It is shown that in some cases the problem can be reduced to ordinary site- or bond percolation problems, while in other cases a new kind of percolation problem arises. Particular attention is paid to the case of spinel structures, and a discussion of recent experiments on the mixed systemyMg₂TiO₄–(1–y)MgFe₂O₄ is given. It is shown that additional frustration effects due to competing interactions are necessary to explain the breakdown of magnetic order upon dilution in that material. Critical exponents for this new kind of percolation problem are also estimated by Monte-Carlo methods and it is suggested that it belongs to the same universality class as usual percolation. As a check of the numerical procedures we redetermine the percolation concentrations of both sublattices of the spinel structure, and find that some of the earlier work on this problem is rather inaccurate.     

Ti-Al2O3金属陶瓷的渗流模型

用渗流理论讨论了Ti-Al₂O₃金属陶瓷的显微结构同宏观电导率的关系,发现渗流模型结果与实验结果是一致的。该Ti-Al₂O₃金属陶瓷的渗流阈值为(Ti的临界百分含量)ω^*=0.16,其临界指数即为三维连续渗流的临界指数值。 关键词：     

Ag-MgF2复合纳米金属陶瓷薄膜的渗透阈研究

介绍了几种计算纳米金属颗粒镶嵌于陶瓷基体中而形成的复合纳米金属陶瓷薄膜渗透阈的理论方法，分析了理论方法中所运用模型的特点及其精度.并将Landauer有效介质理论和Priou渗透阈理论应用于Ag-MgF₂复合纳米金属陶瓷薄膜的渗透阈计算，所得值分别为0.08和0.14(Ag的体积分数)，按Priou渗透阈理论计算的结果与实验结果相符.最后讨论了影响复合金属陶瓷薄膜体系渗透阈的主要因素. 关键词： 2复合纳米金属陶瓷薄膜')" href="#">Ag-MgF₂复合纳米金属陶瓷薄膜 渗透阈理论 渗透阈     

Directed spiral site percolation on the square lattice

A new site percolation model, directed spiral percolation (DSP), under both directional and rotational (spiral) constraints is studied numerically on the square lattice. The critical percolation threshold p _c ≈ 0.655 is found between the directed and spiral percolation thresholds. Infinite percolation clusters are fractals of dimension d _f ≈ 1.733. The clusters generated are anisotropic. Due to the rotational constraint, the cluster growth is deviated from that expected due to the directional constraint. Connectivity lengths, one along the elongation of the cluster and the other perpendicular to it, diverge as p → p _c with different critical exponents. The clusters are less anisotropic than the directed percolation clusters. Different moments of the cluster size distribution P _s(p) show power law behaviour with | p - p _c| in the critical regime with appropriate critical exponents. The values of the critical exponents are estimated and found to be very different from those obtained in other percolation models. The proposed DSP model thus belongs to a new universality class. A scaling theory has been developed for the cluster related quantities. The critical exponents satisfy the scaling relations including the hyperscaling which is violated in directed percolation. A reasonable data collapse is observed in favour of the assumed scaling function form of P _s(p). The results obtained are in good agreement with other model calculations. Received 10 November 2002 / Received in final form 20 February 2003 Published online 23 May 2003 RID="a" ID="a"e-mail: santra@iitg.ernet.in     

A fluorescence study on the critical exponents for the linear polymerization of butyl-methacrylate

The steady-state fluorescence (SSF) technique was used to study the sol-gel transition for the linear bulk polymerization of butyl methacrylate (BMA), carried out above the glass transition temperature of polybutylmethacrylate (PBMA) (T _g?=?20°C). Pyrene (P_y) was used as the fluorescence probe. The increase in P_y intensity was monitored during free radical polymerization of BMA by using SSF technique. Changes in the viscosity of the pregel solutions due to gel formation dramatically enhance the fluorescent yield of aromatic molecules. This effect is used to monitor the sol-gel transition of BMA, as a function of time, at various temperatures. The results are interpreted in the view of percolation theory. The gel fraction exponent β?=?0.39?±?0.02 agreed the best with the static percolation values for the linear bulk BMA polymerization carried out above T _g but weight average degree of polymerization exponent,?γ?deviated from the percolation results.     

Iterated Fully Coordinated Percolation on a Square Lattice

We study, on a square lattice, an extension to fully coordinated percolation which we call iterated fully coordinated percolation. In fully coordinated percolation, sites become occupied if all four of its nearest neighbors are also occupied. Repeating this site selection process again yields the iterated fully coordinated percolation model. Our results show a large enhancement in the size of highly connected regions after each iteration (from ordinary to fully coordinated and then to iterated fully coordinated percolation); enhancements that are much larger than an extension of correlations by an extra lattice constant might suggest. We also study the universality among the three problems by determining the corresponding static and dynamic critical exponents. Specifically, a new method to directly calculate the walk dimension, d _w , using finite size scaling applied to normal mode analysis is used. This method is applicable to any geometry and requires significantly less computation than previously known calculations to determine d _w .