Simulation of Anisotropic Resistivity for Mixed-Phase Manganite La2／3Ca1／3MnO3 Thin Films

We utilize the random network model based on phase separation scenario to simulate the conductive behaviour and anisotropic characteristics of resistivity for La2/3Ca1/3MnO3 (LCMO) thin films. The simulated results agree well with our experimental data, showing a metal-to-insulator transition from a high-T paramagnetic (PM) insulating phase to a low-T ferromagnetic (FM) metallic phase in both the untilted film deposited on a (001) SrTiO3 (STO) substrate and the tilted film grown on a vicinal cut STO substrate. It is found that the resistivity of the tilted sample is higher than that of the untilted one, displaying prominent anisotropic characteristics. The studies reveal that the tilting not only decreases the conduction of the FM domains, but also increases the activation energy of the PM regions, inducing the enhancement of resistivity. All those results suggest that the intrinsic inhomogeneity in the phase separation system plays a significant role in the electrical conductivity and the resistive anisotropy is related to the structure of the crystal lattice.     

Emergent phenomena in manganites under spatial confinement

It is becoming increasingly clear that the exotic properties displayed by correlated electronic materials such as high Tc superconductivity in cuprates,colossal magnetoresistance(CMR) in manganites,and heavy-fermion compounds are intimately related to the coexistence of competing nearly degenerate states which couple simultaneously active degrees of freedom-charge,lattice,orbital,and spin states.The striking phenomena associated with these materials are due in a large part to spatial electronic inhomogeneities,or electronic phase separation(EPS).In many of these hard materials,the functionality is a result of the soft electronic component that leads to self-organization.In this paper,we review our recent work on a novel spatial confinement technique that has led to some fascinating new discoveries about the role of EPS in manganites.Using lithographic techniques to confine manganite thin films to length scales of the EPS domains that reside within them,it is possible to simultaneously probe EPS domains with different electronic states.This method allows for a much more complete view of the phases residing in a material and gives vital information on phase formation,movement,and fluctuation.Pushing this trend to its limit,we propose to control the formation process of the EPS using external local fields,which include magnetic exchange field,strain field,and electric field.We term the ability to pattern EPS "electronic nanofabrication." This method allows us to control the global physical properties of the system at a very fundamental level,and greatly enhances the potential for realizing true oxide electronics.     

Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method

Single crystalline Cr-doped GaN fihns are successfully grown by hydride vapor phase epitaxy. The structure analysis indicates that the film is uniform without detectable Cr precipitates or clusters and the Cr atoms are substituted for Ga sites. The impurity modes in the range 510 530cm^-1 are observed by the Raman spectra. The modes are assigned to the host lattice defects caused by substitutional Cr. The donor-aeceptor emission is found to locate at Ec - 0.20 eV by analyzing the photoluminescence spectrum obtained at different temperatures, and the emission is attributed to the structural defects caused by CrGa-VN complex. The superconductor quantum interference device results show that the Cr-doped GaN film without detectable Cr precipitates or clusters exhibits paramagnetic properties.     

Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

The optical quenching of photoconduetivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98eV, and 2.60 eV are observed. It is found that the 1.98eV quenching band is dominated in all the samples and the 2.60eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity.     

Metal--Insulator Transition in Ca-Doped Sr14-xCaxCu24O41 Systems Probed by Thermopower Measurements

High quality Sr14-xCaxCu24O41 single-crystals are successfully grown by floating-zone technique, and the trans- port properties are studied. The temperature dependence of resistivity along the c-axis direction is semiconductor- like for x ≤ 10 and it can be fitted by the thermal activation equation p = po exp（ △ /kBT） with kB being the Boltzmann constant and A the activation energy. A break in the slope of thermopower （S） versus the inverse temperature （1 IT） corresponding to the formation of charge-density waves （CD W） is first observed for x ≤ 6. The temperature dependence of thermopower becomes metallic for x ≥ 8 while the resistivity is still semiconductorlike. We propose that the insulation behaviour of the resistivity in the Ca doping range 8 ≤ x ≤ 11 could result from the localization of the charge carriers due to the disorder induced by Ca doping and a revised electronic phase diagram is derived based on our observations.     

Emergent reversible giant electroresistance in spacially confined La_(0.325)Pr_(0.3)Ca_(0.375)MnO_3 wires

Micro-patterning is considered to be a promising way to analyze phase-separated manganites. We investigate resistance in micro-patterned La0.325Pr0.3Ca0.375MnO3 wires with width of 10 μm, which is comparable to the phase separation scale in this material. A reentrant of insulating state at the metal–insulator temperature Tp is observed and a giant resistance change of over 90% driven by electric field is achieved by suppression of this insulating state. This resistance change is mostly reversible. The I–V characteristics are measured in order to analyze the origin of the giant electroresistance and two possible explanations are proposed.     

Amorphous-crystalline dual-layer structures resulting from metastable liquid phase separation in （Fe50Co25B15Si10）80Cu20 melt-spun ribbons

（Fe50Co25B15Si10）80Cu20 ribbons are prepared by using the single-roller melt-spinning method. A dual-layer structure consisting of a （Fe, Co）-rich amorphous phase and a Cu-rich crystalline phase forms due to metastable liquid phase separation before solidification. The magnetic hysteresis loops of the as-quenched and annealed samples are measured at room temperature. It is indicated that the coercivity of the ribbon is almost zero in the as-quenched state. The crystallization leads to the increase of coercivity and decrease of saturation magnetization.     

Effect of fabrication conditions on the properties of indium tin oxide powders

This paper reports that indium tin oxide （ITO） crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity c and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350℃ and Sn doping content 6～8wt% are determined. The application of ITO in the military camouflage field is proposed.     

Amorphous-crystalline dual-layer structures resulting from metastable liquid phase separation in(Fe₅₀Co₂₅B₁₅Si₁₀)₈₀Cu₂₀ melt-spun ribbons

(Fe50Co25B15Si10)80Cu20 ribbons are prepared by using the single-roller melt-spinning method.A dual-layer structure consisting of a(Fe,Co)-rich amorphous phase and a Cu-rich crystalline phase forms due to metastable liquid phase separation before solidification.The magnetic hysteresis loops of the as-quenched and annealed samples are measured at room temperature.It is indicated that the coercivity of the ribbon is almost zero in the as-quenched state.The crystallization leads to the increase of coercivity and decrease of saturation magnetization.     

The Critical Properties of One—Dimensional Extended Hubbard Model

In the framework of nonperturbative quantum field theory,the critical phenomena of one-dimensional extended Hubbard model (EHM) at half-filling are discussed from weak to intermediate interactions.After the EHM being mapped into two decoupled sine-Gordon models,the ground state phase diagram of the system is derived in an explicit way.It is confirmed that the coexisting phases appear in different interaction regimes which cannot be found by conventional theoretical methods.The diagram shows that there are seven different phase regions in the ground state,which seems not to be the same as previous discussions,especially the boundary between the phase separation and condensed phase regions.The phase transition properties of the model between various phase regions are studied in detail.     

Phase separation and abnormal transport behaviours in La0.7-xGdxSr0.3MnO3 system

The magnetic and transport behaviours of the La_{0.7-x}Gd_xSr_{0.3}MnO_3 (0≤x≤0.70) system are investigated. The experimental results indicate that with increasing Gd doping content, the magnetism of the system changes from the long-range ferromagnetic order state to the cluster-spin glass state, then to the antiferromagnetic (AFM) state. It is interesting that the phase separation appears at x=0.30 and 0.40 and disappears for x≥0.50 where the AFM state occurs. At high doping content, the transport behaviours exhibit abnormality, e.g. there are two temperature ranges in which the ρ－T curves can be well fitted by a variable-range hopping (VRH) model. We suggest that the VRH does not come from the hopping of carriers between clusters, but from the different magnetic backgrounds in the clusters.     

Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-5-doped InAlAs/InGaAs/InP high electron mobility transistor （HEMT） by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas （2DEG） and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 × 10^12 and 3× 10^12 cm^-2 for the upper and lower impurity layers, respectively, in the double-5-doped InAlAs/InGaAs/InP HEMTs.     

Colossal magnetoresistance in manganites and related prototype devices＊

We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb：SrTio3 p-n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles.     

Significance of the Formal Quantum Number in the Highly Excited Vibration of the DCN Molecule

For the eigenstates of the highly excited vibration of the simple molecule DCN with two stretching modes,a classical approach in a multi-dimensional coset phase space is employed to show that the formal quantum numbers are related to regular or least “irregular” trajectories,with zero or least Lyapunov exponents,and are always located in the inner regions of the phase space.This property reflects that they are the approximate constants of motion.It is also demonstrated that formal quantum numbers correspond to the significant phase space dencity.     

Phase-Locked Fibre Array for Coherent Combination and Atmosphere Aberration Compensation

We report a fibre amplifier array that not only achieves coherent beam combination by compensation of phase noises of fibre amplifier, but also accomplishes correction of atmosphere aberration. It is of master-oscillatormultiple-amplifier （MOPA） configuration, which can be phase-locked by the multidither principle or heterodyne detection principle. First laboratory experiments of atmosphere aberration compensation of a three-element fibre amplifier array are reported. The atmosphere aberration is created by a phase screen in the experiment. The phase changes of the beam, which are introduced by the fibre amplifier and the phase screen, are both detected by the heterodyne detection method. Phase modulators are controlled to compensate for the phase in the three paths. No matter whether there is a phase screen producing atmosphere aberration or not, the dim dynamic interference fringes in the far field turn to a clear and stable pattern, and the peak intensity is maximized. It is indicated that the fibre amplifier array is phase-locked, and coherent combination of the three beams is achieved. It can be used not only to obtain high power fibre laser array but also in laser space communication.     

Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2at.% and the lowest resistivity can reach 1.92 ×10-4Ω·cm at room temperature, close to the best value reported. In contrast to ZnO：Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO：Ga thin film is discussed.     

Numerical analysis of polarization character in Yb~(3+)-doped fiber amplifiers

Polarization-dependent gain (PDG) and state of polarization (SOP) of the output signal light in Yb3+-doped fiber amplifiers are studied by numerically stimulation, which showed that PDG of output signal light is not only changed with the input pump power and signal power, input polarization of pump and signal light, but also changed with the doping concentration, the cross-section anisotropy, the fiber length, the phase difference of the fiber, and so on. Moreover, SOP of the output signal light is studied. It is found that the polarization of output signal light is relative not only to the phase difference of the fiber, polarization of pump and signal light as the non-doped fiber, but also to PDG of output signal light, the cross-section anisotropy, the doping concentration, and so on, which is different to the non-doped fiber.     

Propagation Control of Soliton Trains in Dispersion-Shifted Fibres in the Presence of Third-Order Dispersion

The evolution of soliton trains in dispersion-shifted fibres (DSFs) in the presence of third-order dispersion (TOD) is investigated. The results show that the collision of neighbouring solitons in the trains can be suppressed by means of a proper TOD, but the maximum transmission distance (or bandwidth) is limited by the increasing soliton separation that results from the TOD. It is also shown that the separation can be suppressed by adjusting the initial phase or amplitude difference between the solitons. These results are helpful to re-establish the potential application of the soliton-based optical-communication systems in DSFs.     

Tuning the Heavy Fermion State of CeFeGe_3 by Ru Doping

We successfully synthesize a series of polycrystalline CeRu_xFe_(1-x)Ce_3(0≤x≤0.5)samples,which are characterized using powder x-ray diffraction,resistivity and specific heat measurements.The expansion of the lattice constants with increasing x demonstrates the successful doping of Ru into the CeFeGe_3 lattice.Upon doping,it is found that the temperature up to which Landau-Fermi liquid behavior is observed in the resistivity is reduced.Meanwhile,there is also a pronounced increase in the resistivity coefficient and residual resistivity,as well as a clear upturn in C/T at low temperatures,suggesting that Ru doping may tune the system towards a quantum critical point.     

Two Types of Pressure Dependence of Residual Resistivity in Doped Kondo Insulators

The pressure dependence of the residual resistivity of the doped electron-type and hole-type Kondo insulators (KIs) are calculated within the framework of the slave-boson mean-field theory and the coherent potential approximation. It is shown that as the pressure increases, the resistivity increases and decreases for the dilute doping electron-type and hole-type KIs, respectively. These results are qualitatively in agreement with the experiments.