室温下CdSe胶体量子点超快自旋动力学

利用时间分辨法拉第旋转光谱技术研究了室温下CdSe胶体量子点的自旋相干特性.获得了不同磁场下的自旋退相干时间,并分析了自旋退相干的物理机理.零磁场时量子点激子自旋退相干时间为102 ps,主要受电子与核自旋之间的超精细相互作用所影响.当外加横向磁场强度为250 mT时,激子自旋退相干时间为294 ps;增大磁场强度,自旋退相干时间逐渐减小.在较强磁场环境中(≥250mT),量子点激子自旋动力学由非均匀退相干机制所主导.     

亚单层InGaAs量子点-量子阱异质结构的时间分辨光致发光谱

测定了亚单层InGaAs/GaAs量子点-量子阱异质结构在5K下的时间分辨光致发光谱.亚单层量 子点的辐射寿命在500 ps 至 800 ps之间，随量子点尺寸的增大而增大，与量子点中激子的 较小的横向限制能以及激子从小量子点向大量子点的隧穿转移有关.光致发光上升时间强烈 依赖于激发强度密度.在弱激发强度密度下，上升时间为 35 ps，纵光学声子发射为主要的 载流子俘获机理.在强激发强度密度下，上升时间随激发强度密度的增加而减小，俄歇过程 为主要的载流子俘获机理.该结果对理解亚单层量子点器件的工作特性非常有用. 关键词： 亚单层 量子点-量子阱 时间分辨光致发光谱     

库仑势对抛物量子点量子比特消相干的影响

采用Pekar类型的变分方法,在电子与体纵光学声子强耦合的条件下,计算得出了抛物量子点中电子的基态能量和第一激发态能量及其相应的本征波函数.量子点中这样的二能级体系可以作为一个量子比特.由于声子的自发辐射,造成量子比特的消相干,讨论了消相干时间与库仑结合参数,耦合强度,受限长度,色散系数的变化关系. 关键词： 量子点 量子比特 量子信息 消相干     

计及厚度下量子点量子比特的电磁场依赖性

在电子-体纵光学(Longitudinal optical,LO)声子强耦合条件下,采用LLP-Pekar型变分法推导出计及厚度下量子点中极化子的基态和第一激发态能量本征值和本征函数以及平均声子数的电磁场依赖性。在此基础上,以极化子的二能级结构为载体构造了量子点量子比特。数值计算结果表明:量子比特的振荡周期T_0随量子点厚度L的增加而增大,随磁场的回旋频率ωc、电场强度F和电声子耦合强度α的增加而减小。量子比特的概率密度︱Ψ(ρ,z,t)~2︱随电子横向坐标ρ的变化呈现"正态分布"并受到量子盘厚度L和有效半径R_0的强烈影响,随电子纵向坐标z、角坐标φ和时间t作周期性振荡变化。消相干时间τ随磁场的回旋频率ω_c、色散系数η和电子-声子耦合常数α的增加而增大,随电场强度F、量子点厚度L和有效半径R_0的增加而减小。量子点的厚度是量子点量子比特的一个重要参数,理论上可以通过设计不同的量子盘厚度并结合调节外加电磁场的强度,达到调控量子比特振荡周期、消相干时间大小的目的。     

色散和杂质对双参量非对称高斯势量子点量子比特的影响

选取双参量非对称高斯势描写量子点中电子的受限效应,采用LLP-Pekar变换变分法研究了色散和杂质对量子点量子比特性质的影响.结果表明,量子点量子比特中电子的概率密度随非对称高斯势阱宽的减小而呈现显著振荡,并随介电常数比的增加而减小;量子比特振动周期随高斯势阱深的增加或介电常数比的增加而减小;退相干时间随介电常数比的增加或色散系数的增加而增大;相位旋转品质因子随介电常数比的增加或色散系数的增加而增大.     

磁场对非对称量子点中极化子性质的影响

采用线性组合算符和幺正变换方法研究磁场对非对称量子点中弱耦合磁极化子性质的影响.导出了非对称量子点中弱耦合磁极化子的振动频率、基态能量和基态结合能随量子点的横向和纵向有效受限长度、磁场和电子-声子耦合强度的变化关系.数值计算结果表明:非对称量子点中弱耦合磁极化子的基态能量和基态结合能随量子点的横向和纵向有效受限长度的增加而迅速增大.随回旋频率的增加而增大,随电子-声子耦合强度的增加而减小.     

磁场对非对称量子点中弱耦合极化子的相互作用能的影响

采用改进的线性组合算符和幺正变换相结合的方法,研究磁场、量子点的横向和纵向有效受限长度和电子-声子耦合强度对非对称量子点中弱耦合磁极化子的振动频率和相互作用能的影响.导出了振动频率和相互作用能随量子点的横向和纵向有效受限长度、电子-声子耦合强度和磁场的回旋共振频率的变化关系.数值计算结果表明:振动频率和相互作用能随量子点的横向和纵向有效受限长度的减小而迅速增大,随磁场的回旋共振频率的增加而增大,相互作用能随电子-声子耦合强度的减小而呈线性的增大.     

量子点中极化子的内部激发态性质

采用Huybrechts线性组合算符和幺正变换方法研究了抛物量子点中的强、弱耦合极化子的激发态性质。分别导出强、弱耦合情况下,抛物量子点中的极化子的第一内部激发态能量、激发能量、共振频率与量子点的有效受限长度和电子-声子耦合强度的关系。数值计算结果表明,量子点中弱耦合和强耦合极化子的内部激发态能量、激发能量和共振频率都随量子点的有效受限长度的减小而迅速增大。弱耦合极化子的第一内部激发态能量随电子-声子耦合强度的增加而减少;而强耦合极化子的振动频率随量子点的有效受限长度的减小而迅速增加。弱耦合极化子的第一内部激发态能量、激发能量和共振频率随电子-声子耦合强度的增加而减小。     

库仑场对非对称量子点中强耦合极化子声子平均数的影响

采用线性组合算符和幺正变换方法研究库仑场对非对称量子点中强耦合极化子振动频率和声子平均数的影响。导出量子点中强耦合束缚极化子振动频率和声子平均数随量子点的横向和纵向有效受限长度,库仑束缚势和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中强耦合束缚极化子的振动频率和声子平均数随量子点的横向和纵向有效受限长度的减小而迅速增大。随库仑束缚势和电子-声子耦合强度的增加而增大。     

抛物量子点中弱耦合激子的光学声子平均数

研究了电子-体纵光学声子弱耦合情况下,抛物量子点中激子的性质。在有效质量近似下,采用线性组合算符和幺正变换方法研究了抛物量子点中弱耦合激子的基态能量和光学声子平均数。以GaAs半导体为例进行了数值计算,结果表明:弱耦合情况下,激子的光学声子平均数基态的能量和量子点受限强度的增大而减小,随量子点半径的增大而增大。     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

The effects of LO phonons on charge qubit

In this paper, we study the influence of LO phonon (LOP) on the charge qubit in a quantum dot (QD), and find that the eigenenergies of the ground and first excited states are reduced due to the electron-LOP interaction. At the same time, the time evolution of the electron probability density is obtained, the dependence of the oscillating period on electron-LOP coupling constant is found, the relation of between the oscillating period and the confinement length of the QD is calculated. Finally, we consider the effects of the electron-LOP coupling constant on pure dephasing factor under considering the correction of electron-LOP interaction for the wave functions. Our results suggest that electron-LOP interaction has very important effects on charge qubit.     

水溶性TGA-CdTe量子点的超快弛豫动力学过程探究

本文以三个不同粒径(1^#:2.3 nm, 2^#:2.8 nm和3^#:3.5 nm)的巯基乙酸包覆的CdTe量子点(thioglycolic acid capped CdTe quantum dots, TGA-CdTe QDs)样品为研究对象, 其时间相关单光子计数(time-correlated single photon counting, TCSPC)实验得到的时间分辨光谱显示, 三个量子点的荧光平均寿命依次是～6 ns, ～10 ns和～12 ns, 其动力学过程包括慢过程和快过程两部分. 随其粒径尺寸的增加, 其慢过程延长, 快过程在变短. 然后, 通过瞬态吸收和荧光上转换两种基于飞秒的时间分辨光谱技术, 对TGA-CdTe量子点的带间弛豫过程做了探究. 实验结果显示, 三个TGA-CdTe量子点样品, 随其粒径增大, 最高激发态和最低激发态填充速率减慢, 其中, 最高激发态从0.33 ps增加至0.79 ps; 最低激发态从0.53 ps增至～1 ps. 另外, 由瞬态吸收和荧光上转换两种时间分辨手段相结合, 可得到CdTe量子点带间弛豫的完整图像, 结果显示了TGA-CdTe 量子点的一个本征特征:即在基态漂白恢复过程中的初始上升阶段, 荧光上转换信号要慢于瞬态吸收信号. 这可以为量子点在光电转换应用上提供帮助.     

Spin-flip limited exciton dephasing in CdSe/ZnS colloidal quantum dots

The dephasing time of the lowest bright exciton in CdSe/ZnS wurtzite quantum dots is measured from 5 to 170 K and compared with density dynamics within the exciton fine structure using a sensitive three-beam four-wave-mixing technique unaffected by spectral diffusion. Pure dephasing via acoustic phonons dominates the initial dynamics, followed by an exponential zero-phonon line dephasing of 109 ps at 5 K, much faster than the ~10 ns exciton radiative lifetime. The zero-phonon line dephasing is explained by phonon-assisted spin flip from the lowest bright state to dark-exciton states. This is confirmed by the temperature dependence of the exciton lifetime and by direct measurements of the bright-dark-exciton relaxation. Our results give an unambiguous evidence of the physical origin of the exciton dephasing in these nanocrystals.     

Quantum dot multiexcitons in a magnetic field

Multiexcitons confined in InGaAs/GaAs quantum dots (QDs) with a lateral size slightly exceeding the exciton Bohr radius are investigated by magnetophotoluminescence spectroscopy at 2 K. The Coulomb correlations in the two-exciton complex result in an additional confinement, which increases with decreasing dot size, while a magnetic field reduces this effect. A three-exciton complex is confined only by the geometric confinement potential of the QD. The exciton-exciton repulsion increases with decreasing dot size, while a magnetic field decreases the repulsion strongly when the magnetic length becomes smaller than the lateral size of the QD. A shell model for the QD multiexciton states is proposed. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 263–268 (25 August 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

闪锌矿GaN/AlGaN量子点中激子态及光学性质的研究

在有效质量近似的框架下,运用变分方法研究闪锌矿GaN/AlGaN量子点中的激子态及相关光学性质,探讨电子与空穴在量子点中的三维空间受限和有限势效应.数值计算结果显示,当量子点的尺寸增加时, 量子尺寸效应对电子和空穴的影响减弱,基态激子结合能和带间光跃迁能也都降低;而当该量子点中垒层AlGaN中 Al含量增加时,提高了量子点对电子和空穴的束缚作用, 同时基态激子结合能和带间光跃迁能都增加.数值的理论结果与相关实验测量结果一致.     

Long lived coherence in self-assembled quantum dots

We report measurements of ultralong coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 microeV, which is significantly smaller than the linewidth observed in single-dot luminescence. Time-resolved luminescence measurements show a lifetime of the dot ground state of 800 ps, demonstrating the presence of pure dephasing at finite temperature. The homogeneous width is lifetime limited only at temperatures approaching 0 K.     

Influence of acoustic phonons on dephasing of free excitons in quantum wells

A theory of the dephasing rate of quasi-2D free excitons due to acoustic phonon interaction at low exciton densities is presented. Both deformation potential and piezoelectric couplings are considered for the exciton–phonon interaction in quantum wells. Using the derived interaction Hamiltonian obtained recently by us, exciton linewidth and dephasing rate are calculated as a function of the exciton density, exciton temperature, exciton momentum and lattice temperature.