Influence of Rashba SOI and Polaronic Effects on the Ground-State Energy of Electrons in Semiconductor Quantum Rings

The influence of Rashba spin-orbit interaction （SOI） and polaronic effect on the ground-state energy of electrons in semiconductor quantum rings （QRs） are studied by means of the Lee-Low-Pines variational method. Numerical calculations for GaAs QRs are performed and the results show that the ground-state energy of electrons splits into two branches as E（↑） and E（↓） under the Rashba SOI, which correspond to the spin-up state and spin-down state, respectively. The contribution of the Rashba SOI effect to the ground-state energy of electrons is related to the spin state of electrons and is closely linked to the inner and outer radii of a QR. However, it is independent of the height of the QR. The ground-state energy of electrons decreases due to the polaronic effect in QRs. The energy shift ＆#8710;Ee-LO of the ground-state of the electron induced by the polaronic effect decreases monotonically with increase of the height of a QR and fluctuates with the changes of the radii of QRs. The amplitude of the fluctuation is very sensitive and remarkable to the changes of the inner radius R1 and the outer radius R2.     

First-Principles Study of Structural Stabilities, Electronic and Optical Properties of SrF2 under High Pressure

An investigation of structural stabilities, electronic and optical properties of SrF2 under high pressure is conducted using a first-principles calculation based on density functional theory （DFT） with the plane wave basis set as implemented in the CASTEP code. Our results predict that the second high-pressure phase of SrF2 is of a Ni2In- type structure, and demonstrate that the sequence of the pressure-induced phase transition of SrF2 is the fluorite structure （Fm3m） to the PbC12-type structure （Pnma）, and to the Ni2In-type phase （P63/mmc）. The first and second phase transition pressures are 5. 77 and 45.58 GPa, respectively. The energy gap increases initially with pressure in the Fm3m, and begins to decrease in the Pnma phases at 30 GPa. The band gap overlap metallization does not occur up to 210 GPa. The pressure effect on the optical properties is discussed.     

Rashba自旋-轨道相互作用影响下量子盘中强耦合磁极化子性质的研究

本文基于Lee-Low-Pines幺正变换法,采用Tokuda改进的线性组合算符法研究了Rashba自旋-轨道相互作用效应下量子盘中强耦合磁极化子的性质.结果表明,磁极化子的相互作用能Eint的取值随量子盘横向受限强度ω0、外磁场的回旋频率ωc、电子-LO声子耦合强度α和量子盘厚度L的变化均与磁极化子的状态性质密切相关;磁极化子的平均声子数N随ωc,ω0和α的增加而增大,随L的增加而振荡减小;在Rashba自旋-轨道相互作用效应影响下磁极化子的有效质量将劈裂为m*+,m*-两种,它们随ωc,ω0和α的增加而增大,随L的增加而振荡减小;在研究量子盘中磁极化子问题时,电子-LO声子耦合和Rashba自旋-轨道相互作用效应的影响不可忽略,但Rashba自旋-轨道相互作用和极化子效应对磁极化子的影响只有在电子运动的速率较慢时显著.     

高压下钡的硫化物的结构相变和光学性质研究(英文)

利用基于密度泛函的第一性原理,计算了高压下钡的硫化物(BaS、BaSe和BaTe)的结构相变和光学性质。计算结果表明,这些化合物的压致结构相变是从NaCl型结构转变为CsCl型结构;对于结构转变压力和金属化转变压力,BaS为8.57 GPa和45.4 GPa,BaSe为7.44 GPa和36.5 GPa,BaTe则分别为5.67 GPa和16.7 GPa。光学性质计算结果显示:随着压力的增加,静态介电常数ε0不断增加,介电常数虚部ε2的峰值向高能方向移动(蓝移)。     

三次采油用疏水缔合型AM/DBA共聚物的研究

微乳液;耐温耐盐聚合物;三次采油用疏水缔合型AM/DBA共聚物的研究     

热处理温度对添加碳化硼炭/炭复合材料摩擦磨损性能的影响

以添加碳化硼的炭纤维针刺整体毡为预制体,经化学气相渗透以及树脂浸渍/炭化混合增密制备含碳化硼C/C复合材料,通过MM-1000型摩擦磨损试验机并结合摩擦表面和磨屑形貌的扫描电子显微镜观察分析,研究了热处理温度(2 000 ℃、2 300 ℃和2 500 ℃)对含碳化硼C/C复合材料摩擦磨损性能的影响.结果表明:在2 000 ℃时,含碳化硼C/C复合材料呈现出磨粒磨损特征,其磨损相当严重,摩擦系数较高,摩擦力拒曲线翘尾严重;在2 300 ℃时,碳化硼发挥了促进石墨化的作用,使得含碳化硼C/C复合材料的石墨化度提高,在摩擦过程中摩擦表面能够形成平整而光滑的自润滑膜,材料耐磨能力明显增强,摩擦系数略有下降,制动过程平稳;在2 500 ℃时,含碳化硼C/C复合材料的石墨化度提高至97.8%,与2 300 ℃时相比,其摩擦系数和磨损量具有一定程度的增加,摩擦力矩曲线抖动加剧.     

抛物量子点中弱耦合激子的光学声子平均数

研究了电子-体纵光学声子弱耦合情况下,抛物量子点中激子的性质。在有效质量近似下,采用线性组合算符和幺正变换方法研究了抛物量子点中弱耦合激子的基态能量和光学声子平均数。以GaAs半导体为例进行了数值计算,结果表明:弱耦合情况下,激子的光学声子平均数基态的能量和量子点受限强度的增大而减小,随量子点半径的增大而增大。     

Effects of Thermal Lattice Vibration on the Effective Potential of Weak-Coupling Bipolaron in a Quantum Dot

Based on the Huybrechts' linear-combination operator,effects of thermal lattice vibration on the effective potential of weak-coupling bipolaron in semiconductor quantum dots are studied by using the LLP variational method and quantum statistical theory.The results show that the absolute value of the induced potential of the bipolaron increases with increasing the electron-phonon coupling strength,but decreases with increasing the temperature and the distance of electrons,respectively;the absolute value of the effective potential increases with increasing the radius of the quantum dot,electron-phonon coupling strength and the distance of electrons,respectively,but decreases with increasing the temperature;the temperature and electron-phonon interaction have the important influence on the formation and state properties of the bipolaron:the bipolarons in the bound state are closer and more stable when the electron-phonon coupling strength is larger or the temperature is lower;the confinement potential and coulomb repulsive potential between electrons are unfavorable to the formation of bipolarons in the bound state.