9,9-二辛基聚芴-苯并噻二唑交替共聚物的绿光偏振电致发光

通过缩聚法合成了绿光9,9-二辛基聚芴-苯并噻二唑交替共聚物（PFBT）.该聚合物在一定温度范围内形成向列液晶态,利用其在定向层上的有序排列,实现了峰值发光波长为550 nm的偏振电致发光.采用摩擦后的空穴注入层聚（3,4-乙撑二氧噻吩）∶聚（苯乙烯磺酸）（PEDOT:PSS）作为定向层,通过偏振紫外可见吸收光谱和偏振光致发光谱,研究了聚合物分子在薄膜平面内的单轴取向特性,计算得到薄膜的有序参数为075.制备了结构为ITO/PEDOT:PSS/PFBT/LiF/Al的聚合物电致发光器件,工作电压为15 V时,电致发光偏振率达到4,亮度和流明效率分别为450 cd/m²和021 cd/A. 关键词： 偏振发光 交替共聚物 聚合物电致发光器件     

水溶性CuPc旋涂转速及退火方式对蓝色有机电致发光器件性能的影响

本文以Be(PP)₂为发光层、水溶性酞菁铜(WS-CuPc)为空穴注入层、NPB为空穴传输层,制备了结构为ITO/WS-CuPc/NPB/Be(PP)₂/LiF/Al的蓝色有机发光二极管(OLEDs).研究了WS-CuPc不同旋涂转速对器件性能的影响.并在WS-CuPc最佳旋涂转速的基础上,进一步研究了WS-CuPc薄膜不同退火方式对器件性能的影响.实验中,对WS-CuPc层采用了一种新的退火方式,即对ITO玻璃衬底先加热后旋涂WS-CuPc层,并与传统退火方式 关键词： 水溶性CuPc 蓝色有机电致发光 旋涂转速 退火方式     

利用氧等离子体处理阳极银实现高效率顶发射有机电致发光

主要报道在器件结构为玻璃衬底/Ag(阳极)/NPB(空穴传输层)/Alq3(电子传输及发光层)/Sm(半透明阴极)/Alq3的顶发射有机电致发光器件中,利用氧等离子体对阳极银的表面进行处理来降低阳极和空穴传输层(Ag/NPB)界面处的空穴注入势垒,提高顶发射有机电致发光器件的性能。主要研究了氧等离子体处理时间对阳极银和顶发射有机电致发光器件光电特性的影响。紫外光电子能谱表明,氧等离子体处理能有效降低Ag/NPB界面处的空穴注入势垒。通过优化处理时间获得最佳器件性能,优化后的器件最大效率可达6.14cd/A。     

空穴注入层对蓝色有机电致发光器件性能的影响

以DPVBi为发光层,NPB为空穴传输层,在阳极ITO和NPB之间分别插入不同的空穴注入层CuPc和PEDOT:PSS,制备了两种结构的蓝色有机电致发光器件(OLEDs):ITO/CuPc/NPB/DPVBi/BCP/Alq3/Al和ITO/PEDOT:PSS/NPB/DPVBi/BCP/Alq3/Al,研究了不同空穴注入材料对蓝色OLEDs发光性能的影响,并与没有空穴注入层的器件进行了比较.其中CuPc分别采用旋涂和真空蒸镀两种丁艺,比较了不同成膜工艺对器件发光特性的影响.结果表明:加入空穴注入层的器件比没有空穴注入层器件性能要好,其中插入水溶性CuPc的器件,其发光亮度和效率虽然比蒸镀CuPc器件要低,但比插入PEDOT:PSS 器件发光性能要好.又由于水溶性CuPc采用旋涂工艺成膜,与传统CuPc相比,制备工艺简单,所以为一种不错的空穴注入材料.     

氧化锌锡作为电子传输层的量子点发光二极管

本文研究了以胶状量子点作为发光层和有机/无机混合材料作 为电子-空穴传输层的电致发光二极管器件. CdSe 量子点以薄膜的形式夹在无机氧化锌锡电子传输层和有机TPD空穴传输层中间构成三明治结构. 氧化锌锡电子传输层采用磁控溅射实现, 有机TPD空穴传输层和量子点发光层则采用旋涂的方法制备, 得到的QD-LEDs器件结构界面陡峭、表面平整. 光电特性表征结果显示器件的电致发光具有良好的单色性、低的开启电压, 利 用具有高电子迁移率和低载流子浓度的无机氧化锌锡薄膜作为电子传输层可 以实现器件在大气环境下稳定、明亮的电致发光. 本文分析了器件的工作机理并通过改变氧化锌锡的电导率达到控制器件中电子和空穴的注入比的目的, 优化了器件的光电性能. 关键词： 量子点 氧化锌锡 电致发光 电子传输层     

水溶性酞菁化合物对有机电致发光器件亮度和效率的影响

以水溶性酞菁铜(CuTcPc)为空穴注入层制备多层有机电致发光器件.ITO表面经过CuTcPc溶液修饰,能够提高空穴的注入能力,增加器件的电流密度和亮度.在有机电致发光器件中,空穴传输材料的空穴迁移率一般大于电子传输材料的电子迁移率,空穴是多数载流子;但是,CuTcPc修饰处理不仅提高了器件的电流密度和亮度,也提高了器...     

纳米ZnO薄膜对有机电致发光器件性能的影响

由于有机电致发光器件(Organic light-emitting devices,OLEDs)的主动发光、高亮度等优点,在显示和照明领域有极大的应用前景。报道了纳米ZnO薄膜对这种发光器件性能的影响。在普通有机电致发光器件空穴传输层和发光层之间直接蒸镀一层纳米ZnO薄膜,当纳米ZnO薄膜的厚度为1nm时,器件的电流效率可达3.26cd/A,是没有纳米ZnO薄膜同类器件的1.24倍。适当厚度的纳米ZnO薄膜降低了发光层空穴的浓度,提高了电子和空穴的平衡,从而提高了器件的效率。     

利用Ag_2O/PEDOT:PSS复合缓冲层提高P3HT:PCBM聚合物太阳能电池器件性能的研究

利用Ag2O/PEDOT:PSS(聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐)作为复合阳极缓冲层,制备了P3HT:PCBM(聚(3-已基噻吩):富勒烯衍生物)聚合物太阳能电池器件,并通过改变氧化银插入层的厚度来分析复合缓冲层对器件性能的影响.实验发现,具有阳极缓冲层修饰的器件在退火处理后,光伏性能得到了改善.相比于单一PEDOT:PSS缓冲层的器件,Ag2O/PEDOT:PSS复合缓冲层可以增大器件的短路电流密度和外量子效率,使器件效率得到提高.分析表明,退火处理可以有效改善活性层的薄膜形貌,增加光的吸收和激子的解离,而较薄氧化银的引入,可以有效降低阳极处空穴的输运势垒,提高器件空穴收集效率,并能充当化学间隔层,提高器件光伏性能和稳定性.     

聚合物掺杂有机小分子发光二极管的电致发光与杂质陷阱效应

在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了不同掺杂浓度以及不同薄膜厚度器件的电致发光性能,结果表明存在杂质陷阱效应.基于固体中双注入理论，假设杂质陷阱限制在分立能级上，通过求解泊松方程，得到了掺杂器件J-V特性解析模型.该模型的计算值与实验结果一致.     

富硅a-SiOxNy：H薄膜的电致发光特性

采用甚高频等离子体增强化学气相沉积方法制备富硅氮氧化硅(a-SiO_0.35N_0.59:H)薄膜,以这层薄膜作为有源层构建发光二极管。实验结果表明器件在室温下可观测到强的电致红光发射,发光峰在715 nm附近,与其光致发光峰位一致。电致发光谱测量还表明器件开启电压为8 V,器件的电致发光强度随注入电流的增大呈线性递增关系。电流-电压特性分析表明器件的载流子输运机制以Pool-Frenkel(P-F)发射模型为主。结合发光有源层的微结构分析,初步认为电致红光发射来自于电子和空穴通过有源层的带尾态的辐射复合。     

Effects of nanostructure on optoelectronic properties of β phase polyoctylfluorene thin film

β phase polyoctylfluorene thin films were obtained by exposure to toluene vapor for various annealing times or dipping into a THF/methanol mixture. The photoluminescence and electroluminescence of PFO thin films decrease with increasing annealing time. Grazing incident X-ray diffraction of the thin films indicates that more and larger β phase crystallites will be generated in thin film exposed for longer time, which will lead to more defects that reduce photoluminescence and electroluminescence. By analyzing the mechanism of formation of β phase, we assume that the defects mainly come from the formation of out-of-plane crystalline structure. The assumption is confirmed by higher photoluminescence of β phase polyoctylfluorene thin film achieved by dipping into a THF/methanol mixture that has less out-of-plane crystalline structure.     

团聚效应对基于CdSe/ZnS量子点的电致发光二极管性能的影响

通过旋涂含有CdSe/ZnS量子点(Quantum dot,QD)的溶液为发光层薄膜,制备了叠层结构的电致发光二极管,利用原子力显微镜研究了QD发光亮度、薄膜形貌与其工艺条件、参数的关系。研究结果表明:随QD厚度的增加,QD纳米粒子薄膜由单层向多层薄膜形成,QD纳米颗粒发生团聚现象,并使器件亮度降低。此外,退火温度对QD薄膜形貌及其发光强度影响很大:当退火温度高于150 ℃时,产生的热量也会造成QD纳米粒子团聚,并导致QLED器件发光性能下降。     

交流电激发下的聚合物PPV单层薄膜发光器件的电致发光

交流电激发下的聚合物ＰＰＶ单层薄膜发光器件的电致发光＊张凤玲ａ，ｂ）杨志敏ａ）徐征ａ）黄宗浩ｃ）徐长远ａ）王永生ａ）徐叙王容ａ，ｂ）ａ）（北方交通大学光电子技术研究所，北京１０００４４）ｂ）（天津理工学院材料物理研究所，天津３００１９１）ｃ）（东北师...     

Azimuthal anchoring energy at the interface between a nematic liquid crystal and a PTFE substrate

The azimuthal anchoring energy of the nematic liquid crystal 4-pentyl-4'-cyanobiphenil (5CB) on a poly(tetrafluoroethylene) (teflon, PTFE) film is measured for the first time. The PTFE film is deposed using the Wittmann and Smith technique which consists on rubbing a bar of this polymer against a glass substrate at a controlled temperature and pressure. Measurements of the azimuthal anchoring energy are made with a reflectometric technique which provides high accuracy and sensitivity. The dependence of the azimuthal anchoring energy on temperature and on the rubbing pressure is investigated. The extrapolation length remains virtually constant in the whole temperature range of the nematic phase except for an increase of 25% close to the clearing temperature. The azimuthal anchoring energy is somewhat strong and increases with increasing the deposition pressure of PTFE. The observation of a relevant pre-transitional anisotropy of the reflection coefficients in the isotropic phase proves that the surface interactions favor an excess of orientational order. Ageing of the anchoring energy and gliding of the easy axis are experimentally observed. Both these phenomena suggest the presence of an anisotropic adsorbed layer of nematic molecules on the PTFE film.     

Room-temperature electroluminescence from hydrogenated amorphous carbon nitride film

Electroluminescence devices in the structure of anode/poly(methylphenylsilane)/hydrogenated amorphous carbon nitride/cathode have been fabricated. A strong visible emission is observed at room temperature and the emission intensity increases with the increase of the current density. In this device, poly(methylphenylsilane) acts as a hole transporting and electron blocking layer. It is evidenced that the emission region is near the interface between the poly(methylphenylsilane) and hydrogenated amorphous carbon nitride layers. The electroluminescence properties are discussed and compared with the photoluminescence of the hydrogenated amorphous carbon nitride film.     

Fabrication of polycrystalline silicon films by Al‐induced crystallization of silicon‐rich oxide films

Polycrystalline silicon (poly‐Si) films were fabricated by aluminum (Al)‐induced crystallization of Si‐rich oxide (SiO_x) films. The fabrication was achieved by thermal annealing of SiO_x /Al bilayers below the eutectic temperature of the Al–Si alloy. The poly‐Si film resulting from SiO_1.45 exhibited good crystallinity with highly preferential (111) orientation, as deduced from Raman scattering, X‐ray diffraction, and transmission electron microscopy measurements. The poly‐Si film is probably formed by the Al‐induced layer exchange mechanism, which is mediated by Al oxide.     

Optical Properties and Structure of Electroluminescent SiOx:Tb Films

Using nondestructive optical methods (measurement of transmission spectra in the visible and IR regions and multiangular ellipsometry), we have studied the structural changes in SiO _x :Tb films subjected to high–temperature annealing in air, which are responsible for the appearance of electroluminescence in light–emitting structures based on them. It has been established that the appearance of green electroluminescence in such a film (upon annealing of the film in air at temperatures of 600–800°C) is due to the structural changes in its matrix, leading to partial disproportionation of the thermally deposited SiO _x :Tb film (as a result, the film represents a mixture of several phases – Si, SiO_x, and SiO₂). Films showing blue electroluminescence (annealing temperature 1000°C) are characterized by a higher content of oxygen, a better compactness, and a better macroscopic homogeneity in comparison with films showing green electroluminescence. It is also shown that the thermal cycling accompanying the annealing leads to the appearance of birefringence and scattering in SiO _x O:Tb films. It is anticipated that the annealing–stimulated structural changes taking place at both the micro– and the macrolevel should cause changes in the local surroundings of the luminescence center and in the conditions for heating the charge carriers exciting the luminescence centers.     

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described.     

SnO_2/p~+-Si异质结器件的电致发光:利用TiO_2盖层提高发光强度

通过在重掺硼硅(p+-Si)衬底上溅射SnO2薄膜并在O2气氛下800℃热处理形成SnO2/p+-Si异质结.基于该异质结的器件可在低电压(电流)驱动下电致发光.进一步地,通过在SnO2薄膜上增加TiO2盖层,使器件的电致发光获得显著增强.这是由于TiO2盖层的引入,一方面使SnO2薄膜更加致密,减少了非辐射复合中心;另一方面TiO2较大的折射率和合适的厚度使SnO2薄膜电致发光的出光效率得到提高.