聚合物微环谐振器电光开关阵列的优化与模拟

利用耦合模理论、电光调制理论和微环谐振理论,提出了一个聚合物微环谐振器电光开关阵列的模型.该器件由N-1个微环和N条平行信道构成,在微环上施加不同方式的驱动电压,可以实现N条信道的开关功能.以7微环8信道结构为例,在1550 nm谐振波长下对该器件进行了优化和模拟.结果表明,微环波导芯的截面尺寸为1.7μm×1.7μm,波导芯与电极间的缓冲层厚度为2.5 μm,电极厚度为0.2μm,微环半径为13.76 μm,微环与信道间的耦合间距为0.14μm,输出光谱的3 dB带宽约为0.05 nm,开关电压约为8.1 V左右,插入损耗约为0.23～4.6 dB,串扰小于-20 dB.     

1×N信道聚合物微环谐振器电光开关阵列的开关特性

利用耦合模理论、电光调制理论和微环谐振理论,提出了一个完善合理的聚合物微环谐振器电光开关阵列模型.该器件由1条水平信道、N条竖直信道和N个微环构成,在微环上施加不同方式的驱动电压,可以实现N+1条信道的开关功能.以1×8信道结构为例,在1 550 nm谐振波长下对该器件进行了优化设计和模拟分析.其结果是:微环波导芯的截面尺寸为1.7×1.7 μm2,波导芯与电极间的缓冲层厚度为2.5 μm,电极厚度为0.2 μm,微环半径为13.76 μm,微环与信道间的耦合间距为0.14 μm,输出光谱的3 dB带宽约为0.05 nm,开关电压约为12.6 V,插入损耗约为0.67～1.26 dB,串扰小于-20 dB,开关时间约为11.35 ps.     

聚合物串联耦合双环电光开关的优化

利用耦合模理论、电光调制理论和微环谐振理论,提出一个聚合物串联耦合双环电光开关器件模型,在1.55 μm谐振波长下对该器件进行了模拟和优化.结果为：微环波导芯截面尺寸为1.6×1.6 μm2,波导芯与电极间的限制层厚度为1.6 μm,电极厚度为0.15 μm,微环半径为15.2 μm,微环与信道间的耦合间距为0.14 μm,微环与微环间的耦合间距为0.6 μm,输出光谱的3 dB带宽约为0.06 nm,开关电压约为6 V左右,插入损耗约为2.2 dB,串扰约为－20 dB.所设计的双环电光开关较单环型电光开关不仅输出光谱更加平坦陡峭,非谐振光更弱,而且开关电压更低.     

聚合物微环电光开关的模拟和优化

利用耦合模理论、电光调制理论和微环谐振理论,提出一个完善合理的聚合物微环电光开关的器件模型,并给出了可用以分析微环谐振过程的光强传递函数,据此在谐振波长1 550 nm下对该器件进行了模拟和优化.结果表明：微环波导芯截面尺寸为1.8×1.8 μm2,波导芯与电极间的限制层厚度为1.1 μm,电极厚度为0.15 μm,微环半径为15.2 μm,微环与信道间的耦合间距为0.16 μm,光绕微环转300 圈即可形成稳定的谐振状态,此时的谐振时间约为147.4 ps.不加电压时,下信道的插入损耗约为0.8 dB,上信道的串扰约为－26 dB;当取工作电压等于19.7 V为开关电压时,上信道的插入损耗约为0.34 dB,下信道的串扰约为－20 dB.     

一种带有U形波导的交叉信道单微环电光开关

本文利用耦合模理论,电光调制理论和传输矩阵法,提出了一个带有U形波导的交叉信道单微环电光开关的器件模型,并在谐振波长为1561 nm的情况下对该器件进行了仿真计算.结果表明,该电光开关的开关电压约为400 V,串扰小于-30 dB,插入损耗小于4 dB,开关时间仅为5.4 ps,其中微环上的上升和下降时间仅为0.32 ps.此外,该电光开关由单刀双掷开关控制,通过在微环和U形波导上加载驱动电压可实现三种开关状态,不仅可以实现光信号在两条输出信道的选择,还可以使两条信道同时有光信号输出.     

网格结构微环谐振电光开关阵列的特性分析

设计了由N+1条水平通道、N条竖直通道和2 N个微环构成的电光开关阵列器件,并对其传输特性进行了分析.通过在列微环上加载不同的工作电压,实现相应通道的开关功能.以5×4通道8微环结构为例,取波导芯的宽度与厚度均为1.5μm,波导芯与电极之间的限制层厚度为2.0μm,电极厚度为0.05μm,微环与通道之间的耦合距离为0.1μm.当开关电压为8V时,该器件的插入损耗在2.79～4.31dB范围内,串扰在-20dB以下,消光比在12.5dB以上.     

聚合物定向耦合电光开关的模拟和优化

阐述了定向耦合电光开关的基本结构及工作原理,利用耦合模理论和电光调制理论,在1 550 nm波长下,对器件的结构参量进行了优化,并对其传输光谱、开关电压、插入损耗、串扰等特性进行了分析.模拟过程中,考虑了因金属电极和聚合物材料引起的模式损耗.器件的结构参量优化值为：波导芯截面尺寸为1.7×1.7 μm2,波导芯与电极间的限制层厚度为1.5 μm、电极厚度为0.15 μm,波导间的耦合间距为2.0 μm,相应的耦合长度为2 926 μm.模拟结果表明,本文所设计的器件在开关转换电压0和17.4 V下,在1 534到1 565 nm的波长范围内,器件的插入损耗小于0.16 dB,串扰小于－20 dB,耦合区在2 734~3 120 μm范围内,器件的插入损耗小于0.22 dB,串扰小于－20 dB.     

基于绝缘硅的微环谐振可调谐滤波器

采用电子束光刻和感应耦合等离子刻蚀等工艺,研制了一种基于绝缘硅材料的的微环谐振可调谐滤波器.滤波器微环半径为5 μm左右,波导截面尺寸为(350～500 nm)×220 nm不等.测试结果表明,波导宽度为450 nm时器件性能最为理想,其自由频谱宽度为16.8 nm,1.55 μm波长附近的消光比为22.1 dB.通过对微环滤波器进行热光调制,在21.4 ℃～60 ℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12 nm/℃.研究了基于单环和双环的多通道上下载滤波器,实验结果表明多通道滤波器的信号传输存在串扰,主要是不同信道之间的串扰,尤其在信号上载时,会在相邻信道产生较大串扰.     

反相电极聚合物定向耦合电光开关的优化设计

为了消除单节电极定向耦合电光开关的工艺误差对器件性能的不良影响,应用耦合模理论、电光调制理论、保角变换及镜像法,优化设计了一种两节交替反相电极聚合物定向耦合电光开关.模拟结果表明,该器件具有良好的开关性能:在1 550 nm的工作波长下,器件耦合区的长度为4 753.5 μm,交叉态电压为1.22 V,直通态电压为2.65 V,插入损耗小于2.21 dB,串扰小于-30 dB.通过微调状态电压,可以很容易地消除工艺误差对器件性能产生的不良影响.本文方法的设计结果与光束传播法的仿真结果符合得很好.     

聚合物微环谐振波分复用器传输特性的理论分析

根据耦合模理论,给出了1×N信道微环谐振波分复用器(MRRWM)的光强传递函数通用公式,并分析了微环谐振波分复用器的传输特性。利用参量优化结果,在中心工作波长约为 1.55μm、波长间隔约 5.6 nm的情况下,对1×8信道硅基聚合物微环谐振波分复用器进行了数值模拟。计算结果表明,该器件具有以下优良的性能:分波光谱准确,自由光谱区约为18 nm,对于半径10μm以上的微环弯曲损耗很小,且器件的插入损耗主要由波导的传输损耗决定,振幅耦合比率为0.2时对应的每条竖直输出信道的插入损耗在0.57 dB以下,信道间的串扰小于-18.5 dB,输出谐振峰3 dB带宽可达0.25 nm,最小背景光的强度约为3.8×10-4。     

Effect of bending on characteristics of a polymer microring resonant wavelength multiplexer

Novel formulas of transfer functions are presented, some parameters are optimized, and bending effect of microrings on characteristics is analyzed for a polymer microring resonant wavelength multiplexer (MRRWM) around the central resonant wavelength of 1.55 μm with the wavelength spacing of 1.6 nm and with eight vertical output channels. Simulated results show that the bending of microrings causes the variation of the propagation constant, leads to the shift of the transmission spectrum, and increases the insertion loss. A method is proposed for eliminating the shift of the transmission spectrum and realizing the accurate demultiplexing of the device. The polymer MRRWM designed possesses the 3-dB bandwidth of 0.2 μm, insertion loss less than 0.57 dB, and crosstalk below −20 dB for every vertical output channel.     

Simulation and optimization of a polymer directional coupler electro-optic switch with push-pull electrodes

Structural model and design technique are proposed for a polymer directional coupler electro-optic switch with rib waveguides and push-pull electrodes, of which the electric field distribution is analyzed by the conformal transforming method and image method. In order to get the minimum mode loss and the minimum switching voltage, the parameters of the waveguide and electrode are optimized, such as the core with, core thickness, buffer layer between the core and the electrode, coupling gap between the waveguides, electrode thickness, electrode width and electrode gap. Switching Characteristics are analyzed, which include the output power, insertion loss, and crosstalk. To realize normal switching function, the fabrication error, spectrum shift, and coupling loss between a single mode fiber (SMF) and the waveguide are discussed. Simulation results show that the coupling length is 3082 μm, push-pull switching voltage is 2.14 V, insertion loss is less than 1.17 dB, and crosstalk is less than −30 dB for the designed device.     

Polymeric Multimode Interference Mach–Zehnder Interferometer Electro-Optic Switch Using Embedded Coplanar Waveguide Electrode: Theory,Design, and Analysis

Abstract

The self-imaging theory is improved for designing a polymer multimode interference Mach–Zehnder interferometer electro-optic switch. The electro-optic overlap factor is enhanced from 0.6510 to 0.9658 through adopting an embedded coplanar waveguide electrode. Considering the mode dispersion effect, formulations of time-domain response are derived, and switching characteristics are analyzed. The total device length is about 7.175 mm, the switching voltage is 2.622 V, and the switching time is 29.90 ps. The lightwave 3-dB bandwidth is 20 nm, the insertion loss is less than 2.70 dB, and the crosstalk under cross and bar states are less than ?55 dB and ?45 dB, respectively.     

Numerical analysis of a direct UV-written 1 × 8 double smooth octagon microrings resonant wavelength demulti/multiplexer

A microring resonant wavelength demulti/multiplexer (MRRWDM) based on UV-written technology is designed. By using a double smooth octagon microrings structure, a 1 × 8 device around the central wavelength of 1550.918 nm with the wavelength spacing of 1.4 nm is presented. Analytical results based on coupled mode theory show that the 3 dB bandwidth is about 0.22 nm, the insertion loss is less than 0.7 dB, and the crosstalk is below ?47 dB for every output channel of the designed device without tolerances.     

Analysis of polymer electro-optic microring resonator switches

The structure and the principle for the polymer electro-optic microring resonator (MRR) switch are proposed as well as the transfer functions. The structural parameters are optimized; the transmission characteristics are analyzed including the output power, switching time, switching voltage, insertion loss, and crosstalk. When the operation voltage is 0 V, the insertion loss and crosstalk are ∼1.2 and −20.2 dB, respectively; when the operation voltage is 10.0 V, those are ∼0.35 and −20.0 dB, respectively. Furthermore, a novel method is presented for analyzing time-domain response of the device and the switching time is determined to be ∼10.71 ps. These results indicate the favorable switching functions of the designed device.     

Simulation and optimization of a polymer 2×2 multimode interference-Mach Zehnder interferometer electro-optic switch with push-pull electrodes

Structural model and design technique are proposed for a polymer 2×2 multimode interference-Mach Zehnder interferometer electro-optic (MMI-MZI EO) switch with push-pull electrodes. The electric field distribution is analyzed by the conformal transforming method and image method. To get the minimum mode loss and half-wave voltage, the parameters of the waveguide and electrodes are optimized, such as the core width, core thickness, buffer layer thickness, size of the MMI couplers and the modulating region, electrode thickness, electrode width, and electrode gap. Switching characteristics are analyzed, including the output power, crosstalk, and wavelength shift. Simulation results show that the half-wave voltage is 0.74 V, the optical 3 dB bandwidth is 12.66 GHz, and the crosstalk is less than −30 dB for the designed device.