GaAs(100)表面硫钝化的新方法:CH3CSNH2/NH4OH处理

建立了一种硫钝化GaAs(100)表面的新方法,即CH₃CSNH₂/NH₄OH溶液处理,应用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)表征了该钝化液处理的n-GaAs(100)表面的成键,特性和电子态.结果表明,经过处理的n-GaAs(100)表面,S既与As成键也与Ga成键,形成S与GaAs的新界面,并且Ga和As的氧化物被移走,这标志着CH₃CSNH₂/NH_{4关键词：}     

中性(NH4)2S溶液钝化GaAs(100)表面的研究

采用同步辐射光电子能谱(SRPES)结合扫描电子显微镜(SEM)和称量法，研究了中性(NH₄)₂S溶液钝化GaAs(100)表面，并与常规(NH₄)₂S碱性溶液钝化方法进行了比较- SRPES结果表明该处理方法可以产生较厚的Ga硫化物层和较强的Ga—S键，Ga的硫化物有好的稳定性-称量法表明该方法有更低的腐蚀速率-SEM结果表明该方法钝化处理的GaAs表面所产生的腐蚀坑数目少，直径小- 关键词：     

LaNi5的硫化物中毒及其再生的表面研究

本文概括了氢气中的硫化物(如H₂S,SO₂和CS₂)对LaNi₅的表面中毒和再生。AES,XPS的分析表明,三种硫化物的中毒性质不同:H₂S中毒产生La₂S₃和NiS这样的表面化合物;SO₂和CS₂中毒分别发生化学吸附和物理吸附。此外,从Ni(2P_3/2)谱峰强度变化,表明了在LaNi关键词：     

CeO2/Nb2O5界面效应对提高CeO2氧敏特性的XPS研究

用射频/直流磁控溅射法制备了CeO₂/Nb₂O₅双层氧敏薄膜，利用X射线光电子能谱(XPS)，描述并解释了单层CeO₂薄膜中氧随温度变化的动力学行为，以及CeO₂/Nb₂O₅薄膜界面对氧敏特性的影响.通过对Ce3d XPS谱的高斯拟合，计算了Ce³⁺浓度并给出了判定Ce⁴⁺还原的标志.结果表明，界面效应可以提高CeO₂/Nb₂O₅薄膜中Ce⁴⁺的还原能力，使之远远高于单层CeO₂薄膜，这对薄膜的氧敏特性是极为有利的. 关键词：     

包钴对α-Fe2O3粉末Morin相变的影响

用穆斯堡尔谱,磁性测量,中子衍射和X射线光电子能谱(XPS)等方法对纯的和包钴α-Fe₂O₃粉末Morin相变的影响以及有关性质进行了研究,发现包钴会使α-Fe₂O₃的Morin温度降低,相变温度的区域扩大,矫顽力明显增大,3d能带变化,假设包钴可使α-Fe₂O₃的单离子各向异性常数K_FS下降来解释上述实验结果。 关键词：     

P2O5—Li2O—LiCl-Al2O3系统非晶态离子导体与金属电极间界面阻抗的色散关系

本文研究了非晶态锂离子导体29.6P₂O₅-44.4Li₂O-26.0LiCl和36.3P₂O₅-44.4Li₂O-15.1LiCl-4.2Al₂O₃的阻抗谱,给出了测量盒系统的等效电路,得出了界面阻抗的色散关系。在一定条件下,此界面阻抗过渡到恒相角阻抗。 关键词：     

YBa2Cu3O7超导体中空穴状态的X射线光电子能谱研究

对正交单相YBa₂Cu₃O₇样品进行了X射线光电子能谱(XPS)测量。明显观察到Cu的类高价状态。讨论了Cu_2p和O_1s的XPS中各峰对应的电子状态,认为由于过量的O而引入的额外空穴产生在O_2p轨道上。Cu的类高价状态包含Cu3d⁹L和Cu3d¹⁰L²两种状态的组合。 关键词：     

助熔剂对Sr0.97Si2N2O2：0.03Eu2+荧光粉制备及发光性能的影响

在N₂气氛下,以Si₃N₄、SrCO₃和Eu₂O₃为原料,采用自还原高温固相合成法制备了Sr_0.97Si₂N₂O₂：0.03Eu²⁺荧光粉。在近紫外光激发下,该荧光粉发出明亮的黄绿光,发射峰位于533 nm处。采用XRD分析了不同助熔剂（NH₄F,NH₄Cl,Li₂CO₃,H₃BO₃）条件下的荧光粉晶相发育情况。通过SEM和荧光光谱研究了不同助熔剂对Sr_0.97Si₂N₂O₂：0.03Eu²⁺晶粒形貌及发光性能的影响。结果表明,随着助熔剂的添加,荧光粉团聚现象缓解、结晶度增强、分散性提高,且不同程度地提高了荧光粉的发光强度,其中以NH₄Cl的添加效果最佳。     

Fe离子注入多晶Al2O3的光电子能谱研究

本文应用光电子能谱(XPS)方法分析Fe离子注入多晶Al₂O₃样品中各离子的存在状态。通过微机对谱峰进行高斯拟合处理,得出注入离子Fe不同价态的相对含量。 关键词：     

CaAs(100)的(NH4)2Sx和P2S5/(NH4)2Sx表面钝化

利用光致发光谱、X射线光电子谱和俄歇电子谱等技术研究了(NH_4)_2S_x和P_2S_5/(NH_4)_2S_5化学钝化GaAs(100)表面.结果表明,(NH_4)_2S_x中S钝化可以完全去除GaAs表面的氧化物.P_2S_5/(NH_4)_2S_x中P_2S_5对降低G_2A_5表面态密度,提高光致发光强度是有效的.钝化表面P氧化物存在对防止GaAs表面初期氧化起重要作用. 关键词：     

Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces

A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH₄OH:H₂O and (1:10) HCl:H₂O solutions for AlGaN surface preparation by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) is reported. The XPS data clearly reveal that the native oxide on AlGaN was composed of Al₂O₃, Ga₂O₃ and NO compounds. These compounds were etched off partially or completely by both the chemical treatments, namely NH₄OH or HCl solutions, independently. The HCl treatment etches out Al₂O₃ completely from native oxide unlike NH₄OH treatment. The HCl treatment results in larger amount of carbon segregation on AlGaN surfaces, however it removes all oxides’ compounds faster than NH₄OH treatment. The AFM results reveal the improvement of surface morphology by both the chemical treatments leading to the surface roughness RMS values of 0.24 nm and 0.21 nm for NH₄OH and HCl treated AlGaN layers, respectively.     

A comparison of the effectiveness of GaAs surface passivation with sodium and ammonium sulfide solutions

To explore the possibility of improving the effectiveness of chemical and electronic passivation, a study has been made of the properties of GaAs surface treated with solutions of inorganic sulfides [Na₂S and (NH₄)₂S] in various amphiprotic solvents (water, alcohols). X-ray photoelectron and photoluminescence spectroscopy shows that the efficiency of both chemical and of electronic passivation of GaAs surface increases with decreasing dielectric permittivity of the solvent. The degree of this increase reached with solutions of the sulfide of a strong base (Na₂S) is larger than that of a weak-base sulfide [(NH₄)₂S]. Fiz. Tverd. Tela (St. Petersburg) 39, 63–66 (January 1997)     

PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx

InP(100) surface treated with (NH₄)₂S_x has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH₄)₂S_x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.     

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation

Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.     

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

The passivation of III-V semiconductor materials with sulphur is widely reported to reduce interface state defects and improve semiconductor device performance. The most common approach utilises ammonium sulphide ((NH₄)₂S), however there are wide variations in the reported processing parameters involved in this procedure. This study provides a comprehensive review of the various parameters used as well as determining the optimal processing conditions in terms of sample pre-treatments, temperature of the (NH₄)₂S solution, length of time the sample is in the solution and (NH₄)₂S concentration, by measuring the level of residual native oxides and surface roughness by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively.     

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH₄)₂S_x treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH₄)₂S_x treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH₄)₂S_x-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

Investigation of ageing characteristics and identification of surface chemical changes on SrGa2S4:Ce display phosphor under electron beam bombardment

Cathodoluminescent ageing characteristics of SrGa₂S₄:Ce³⁺ under prolonged electron beam bombardment was studied and the data are presented. The cathodoluminescent intensity with an increasing Coulomb loading was observed to degrade under different primary electron beam voltages. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to monitor the surface chemical changes during electron beam bombardment and after the degradation process. Auger peak to peak heights monitored during the ageing process suggest a loss in S and C and an initial increase in oxygen concentration on the surface. XPS results indicate the formation of a SrO overlayer due to electron stimulated surface chemical reactions (ESSCRs).