聚乙烯咔唑超分子膜／p—Si体系的表面光电压谱研究

利用ＬＢ技术，以二十碳酸作辅助成膜材料，在疏水处理的ｐ－Ｓｉ上分别制备了２，４，６，１０和２０层聚乙烯咔唑超分子膜。对这种体系的表面光电压谱研究结果表明，表面光电压随ＰＶＫ膜层数的增加而增强，在紫外区增强较为明显。随着膜层数的增加，表面光电压有趋于饱和的趋势。膜对基底的敏化主要是由于ＰＶＫ的光导电性引起的。     

CdS薄膜的染料敏化

用ＬＢ方法在电沉积ＣｄＳ薄膜上修饰了ＰｃＣｕ单分子膜，并利用表面光电压谱对ＣｄＳ薄膜与ＰｃＣｕ修饰的ＣｄＳ薄膜进行了测试。结果表明，修饰后的ＣｄＳ薄膜其表面光电压值提高约５０倍，并且光电压响应由３００－５００ｎｍ扩展为３００－７００ｎｍ。紫外－可见偏振光谱测试表明，ＬＢ膜中酞菁环的取向角为４５度。     

MPS结构中的光生伏特现象

报道了金属／多孔硅／单晶硅结构（ＭＰＳ）中光生伏特效应研究的最新结果，给出了该结构的光谱响应曲线，发现该结构在１１００—３５０ｎｍ波长范围具有明显的光谱响应．还测量了开路电压随温度、光照波长及光照强度的变化关系，发现开路电压随温度的降低近似线性增加，其温度系数对于金／多孔硅结构约为２.０ｍＶ／Ｋ，对于铝／多孔硅结构约为２.８ｍＶ／Ｋ，与单晶硅及非晶硅太阳电池的温度系数相近，但ＭＰＳ结构的开路电压随光强的增加不满足对数关系．结果表明，在ＭＰＳ结构中金属／多孔硅肖特基结对光生伏特效应起了主要作用，而多孔硅／单晶硅异质结的作用是与此相反的 关键词：     

C60与聚乙烯咔唑（PVK）键合物和共混物在紫外激光作用下的碳笼增强融合

用飞行时间质谱测量３０８ｎｍ激光熔蚀Ｃ６０化学修饰的聚乙烯咔唑（Ｃ６０－ＰＶＫ）与Ｃ６０／聚乙烯咔唑共混物（Ｃ６０／ＰＶＫ）的产物分布，分析了正负离子质谱，发现明显的碳笼融合现象。比较分析了融合过程的增强机理，认为Ｃ６０与ＰＶＫ间的化学键合以及电荷转移络合分别在Ｃ６０－ＰＶＫ键合物和Ｃ６０／ＰＶＫ共混物的富勒烯融合过程中起了重要作用。     

乙烯基吡咯烷酮—醛酸乙烯酯共聚物对1—苯胺基萘—8—磺酸盐水溶液的荧光...

将荧光探针１－苯胺基萘－８－磺酸盐（ＡＮＳ）加入到乙烯基吡咯烷酮（ＶＰ）－醋酸乙烯酯（ＶＡＣ）共聚物溶液中，共聚物组成分别为ＦＶＰ＝０．８４；０．７４；０．７０；０．５５（以乙烯基吡咯烷酮结构单元的分子数表示）。实验结果表明：ＶＰ－ＶＡＣ共聚物对ＡＮＳ水溶液的荧光强度增强效应与共聚物中乙烯基吡咯烷酮在逻节中的比例有关，其组成为ＦＶＰ＝０．５５的共聚物对ＡＮＳ水溶液有显著的荧光增强效应，相对荧光强度     

测试温度对nc-Si∶H膜光致发光特性的影响

利用常规等离子体化学气相沉积（ＰＥＣＶＤ）工艺制备了ｎｃ－Ｓｉ∶Ｈ膜，并对其光致发光（ＰＬ）特性从１０～２５０Ｋ温度范围内进行了变温测量．实验结果指出，随着测试温度升高，ＰＬ峰值能量发生了５４ｍｅＶ的红移，ＰＬ强度在Ｔ＞８０Ｋ后呈指数下降趋势．ＰＬ峰值能量的红移起因于带隙的收缩，而ＰＬ强度的减弱则是由于非辐射复合起了主导作用．     

测试温度对nc—Si：H膜光致发光特性的影响

利用常规等离子体化学气相沉积（ＰＥＣＶＤ）工艺制备了ｎｃ－Ｓｉ：Ｈ膜，并对其光致发光（ＰＬ）特性从１０－２５０Ｋ温度范围内进行了变温测量，实验结果指出，随着测试温度升高，ＰＬ峰值能量发生了５４ｍｅＶ的红移，ＰＬ强度在Ｔ〉８０Ｋ后呈指数下降趋势，ＰＬ峰值能量的红移起因于带隙收缩，而ＰＬ强度的减弱则是由于非辐射复合起了主导作用。     

Spiro－Oxaziue染料掺杂高分子材料光致变色效应的研究

报道Ｓｐｉｒｏ－Ｏｘａｚｉｕｅ染料掺杂高分子（ＳＯ／ＰＶＡ）膜具有很强的可逆光致变色效应，通过对这种高分子膜吸收光谱的测试，证实ＳＯ分子具有二个特征吸收带，一个在３６０ｎｍ，另一个在５９５ｎｍ，分别对应于二个分子异构体ＳＯ１和ＳＯ２，有关这种ＳＯ／ＰＶＡ光致变色过程的研究给出了ＳＯ１对紫外光和ＳＯ２对可见光（波长在５１５ｎｍ）的吸收系数分别为１．２ｃｍ２／Ｊ和６×１０－２ｃｍ２／Ｊ，ＳＯ２的寿命为３８ｓ。最后本文给出了采用这种ＳＯ／ＰＶＡ膜实现紫外－可见光图像转换和空间光调制操作的实验演示结果     

高聚物—富勒烯体系薄膜微微秒三倍频效应研究

采用５０ｐｓ的１．０６ｕｍ的基频光，对用物理喷束沉积方法制备的聚乙烯咔唑Ｐｏｌｙ－富勒烯组合薄膜进行三倍频信号测量。在ＰＶＫ／Ｃ６０分层膜与混合膜中观测到三倍频信号增强，考虑到两者之间的电荷转移效应，在分层膜中，把该三阶非线性增强归因于ＰＶＫ与富勒烯Ｃ６０之间的电荷转移所生成的载流子引起的电偶极矩和极化强度增强，在混合膜中，则是电荷转移所生成的络合物起主要作用。     

乙烯基吡咯烷酮－醋酸乙烯酯共聚物对1－苯胺基萘－8－磺酸盐水溶液的荧光特性的影响

将荧光探针１－苯胺基萘－８－磺酸盐（ＡＮＳ）加入到乙烯基吡咯烷酮（ＶＰ）－醋酸乙烯酯（ＶＡＣ）共聚物溶液中，共聚物组成分别为ＦＶＰ＝０．８４；０．７４；０．７０；０．５５（以乙烯基吡咯烷酮结构单元的分子数表示）。实验结果表明：ＶＰ－ＶＡＣ共聚物对ＡＮＳ水溶液的荧光强度增强效应与共聚物中乙烯基毗咯烷酮在链节中的比例有关，其组成为ＦＶＰ＝０．５５的共聚物对ＡＮＳ水溶液有显著的荧光增强效应，相对荧光强度比ＰＶＰ均聚物大一倍，而其他组成的共聚物／ＡＮＳ溶液的相对荧光强度只与溶液中ＶＰ结构单元的含量有关。这种现象说明接近等分子比的乙烯基吡咯烷酮－醋酸乙烯酯共聚物与ＡＮＳ分子间形成的过渡态结构有利于能量转移，能产生较高的量子收率，可作为电子转移反应能量转移介质。在生化反应中，可模拟酶反应机理，因而有一定的理论意义和实际意义。     

基于在聚合物中掺杂染料DCJTB的白色有机电致发光器件

将Alq₃和DCJTB作为掺杂物与基质PVK按照不同比例混合共溶,旋涂成膜,制备了PVK∶Alq₃∶DCJTB为发光层的结构为ITO/ PVK∶Alq₃∶DCJTB/ BCP/Alq₃/LiF/Al的器件,其中Alq₃和BCP分别用作电子传输层和空穴阻挡层,PVK用作蓝光发光层和空穴传输层。保持PVK和DCJTB的质量比为100∶1不变,改变PVK和 Alq₃的质量比,当PVK和Alq3的质量比为20∶1时,得到了效果较好的白光。器件在电压为14 V时,色坐标达到(0.33,0.36),在10～14 V范围内变化甚微。     

Electrochemical formation and properties of thin polyaniline films on Au(111) and p-Si(111)

The specific aspects of phase formation phenomena involved in electrodeposition of conducting polymer layers are critically discussed. The mechanism of formation and the properties of electrodeposited thin polyaniline (PANI) films on Au(111) and p-Si(111) are investigated by means of transient measurements, cyclic voltammetry, electrochemical impedance spectroscopy and atomic force microscopy (AFM). Experimental results show that the initial stages of PANI electrodeposition on Au(111) can be described by a model including progressive appearance and preferential 2D growth of polymer islands. The electropolymerization process on p-Si(111) substrates is preceded by anodic formation of an inhomogeneous thin SiO₂ layer giving rise to a progressive appearance and growth of 3D PANI islands. The electrochemical redox properties of electrodeposited PANI films on p-Si(111) are influenced strongly by the electronic band structure of silicon. PACS 81.10.Aj; 82.45.Wx; 82.45.Vp     

Au/PZT/BIT/p-Si异质结的制备与性能研究

采用脉冲激光沉积(PLD)工艺,制备了以Bi₄Ti₃O₁₂(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr_0.52Ti_0.48)O₃(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁 关键词： 铁电薄膜 异质结构 脉冲激光沉积(PLD)     

Layered TiO2 :PVK nano-composite thin films for photovoltaic applications

The influence of the solvent used for spin-coating on the homogeneity of poly(N-vinylcarbazole) (PVK) films is investigated. Homogenous films are obtained only by the use of toluene, solution in tetrahydrofuran (THF) and chloroform results in radially oriented inhomogeneities and films prepared by use of N-methylpyrrolidone and dimethylacetamide show particle formation during spin-coating. Layered nano-composite thin films are prepared by spin-coating a PVK film on top of a nano-structured titanium dioxide ( TiO2) layer. The TiO2 thin films are prepared by a sol-gel process using an amphiphilic copolymer as structure-directing agent. Structural characterisation of the TiO2 :PVK nano-composite films is done by field emission scanning electron microscopy (FESEM) and grazing-incidence small-angle scattering (GISAXS). Bare TiO2 films are probed for comparison. Light is basically only absorbed in the ultraviolet regime and absorption slightly increases upon addition of PVK, which makes the layered TiO2 :PVK nano-composite thin films good candidates for UV photovoltaic devices. Furthermore, absorption remains stable over a period of several days.     

Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films and the Influence of Various Hole-Transporting Layers on the Performance

We present a systematic analysis of the exciton-recombination zone within all-quantum-dot(QD) multilayer films using sensing QD layers in QD-based light-emitting diodes(QLEDs),and demonstrate the all-QD multilayer films with different sequences of layers prepared by inserting a sensing blue QD layer denoted as B at various positions within four red QD multilayers denoted as R.We also use different hole transporting layers(PVK,CBP as well as poly-TPD) to prevent the formation of leakage current and to improve the luminance.The results show that the total EL emission is mostly at the fourth(60%) and fifth(40%) QD monolayers,adjacent to ITO.This presents both decreasing current density and increasing brightness with different hole transporting layers,thus resulting in more efficient performance.     

n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (~2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.     

Preparation and photoluminescence properties of electrospun nanofibers of C60/PVK

Ultrafine fullerene (C60)/poly(N-vinylcarbazole) (PVK) composite fibers with 1 μm diameter were prepared by electrospinning C60/PVK blend solutions in solvent mixtures of N,N-dimethylformamide (DMF)/toluene. The UV absorption spectra of nanofibers have a similar behavior as observed in the thin films for the same doping condition. It is interesting to observe that the PVK nanofibers have a very strong blue-violet luminescence, while ‘bright spots’ due to C60 can be observed on the C60/PVK fibers under UV irradiation in a fluorescence optical microscope. Compared to the emission spectra of PVK thin films, the photoluminescence of the PVK nanofibers shows a new emission peak at 437 nm. Efficient energy transfer was observed in C60/PVK thin films, as well as in blend nanofibers.     

PVK/C_(60)组合体系薄膜的拉曼光谱和荧光光谱研究

我们采用物理喷束淀积技术制备了Ｃ６０、Ｃ７０及聚乙烯咔唑ＰＶＫ／Ｃ６０的混合和分层薄膜，拉曼光谱的测量表明，这种技术所制备的富勒烯薄膜中，富勒烯的笼型结构仍保持完整，而在ＰＶＫ／Ｃ６０组合薄膜中，拉曼光谱及荧光光谱测量表明：在ＰＶＫ和Ｃ６０分子之间存在激发传递过程，在混合膜中，这种激发传递过程要明显强于分层组合薄膜。     

Porous-silicon microcavities

Summary The properties and preliminar applications of porous-silicon (p-Si) microcavities are here reported. These structures are based on a planar resonator formed by two narrow-band high-reflectance distributed Bragg reflectors separated by a thin active optical layer, all of which are made of p-Si layers. The accurate control of the electrochemical dissolution of Si lets us realize p-Si multilayers with the desired refractive indices sequence. Large improvements of the emission properties of p-Si microcavities with respect to standard p-Si samples are observed: 1) increased emission intensity, 2) spectral narrowing of the emission band, and 3) high directionality in the emission pattern. Resonant-cavity light-emitting diodes with higher efficiencies and stabilities with respect to standard p-Si/metal devices are demonstrated. Reflectivity changes due to absorption saturation have been observed. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce), Torino, 12–13 October 1995.     

细菌视紫红质（BR）的表面光电压谱研究

采用表面光电压谱系统地研究了细菌视紫红质的光伏特性，结果表明ＢＲ薄膜有着独特的光电性质，并且与ＢＲ薄膜的制备方法和湿度有关，从经过ＨＥＰＥＳ修饰的ＢＲ表面光电压谱，观察到了ＢＲ的中间体Ｍ４１２和Ｏ６４０响应峰。说明ＨＥＰＥＳ对ＢＲ中间体的稳定作用，这些现象可由ＢＲ的光循环和光电压产生机理来解释。