H2Ge=Si:与甲醛生成含锗螺硅杂环化合物反应机理的从头算研究

用MP2/AUG-CC-PVDZ 方法研究了单重态H₂Ge=Si:与甲醛环加成反应的反应机理,该反应有一条主反应通道. 该反应所呈现的反应规律为：两反应物通过[2+2]环加成反应首先生成了一锗杂四元环硅烯,由于该锗杂四元环硅烯中Si:原子的3p空轨道与甲醛的π轨道形成了π→p授受键,使锗杂四元环硅进一步与甲醛结合生成了一中间体. 由于该中间体中的Si:原子在过渡态之后发生了sp³杂化,该中间体经过渡态异构化为含锗的螺硅杂环化合物. 该研究结果从理论上揭示了单重态H₂Ge=Si:及其衍生物(X₂Ge=Ge:, X=H, Me, F, Cl, Br, Ph, Ar, …)与非对称性π 键化合物环加成反应的反应机制.     

二氯亚锗基卡宾与甲醛生成锗杂双环化合物反应的从头算研究

用CCSD(T)//MP2/6-31G^*方法研究了单重态二氯亚锗基卡宾(Cl₂Ge=C:)与甲醛生成锗杂双环化合物的环加成反应机理,根据该反应的势能面可以预言,该反应有两条相互竞争的主反应通道．该反应所呈现的反应规律为：二氯亚锗基卡宾中C原子的2p空轨道因从氧端插入甲醛的π轨道而造成了中间体的形成;在中间体和两反应物之间,因二氯亚锗基卡宾和甲醛中的两成键π轨道发生了[2+2]环加成作用,从而分别生成了Ge-O对位的和Ge-O顺位的两四元环化合物;由于四元环化合物中卡宾C原子的不饱和性,进一步与甲醛作用,从而生成了两锗杂双环化合物．     

亚锗基卡宾及取代亚锗基卡宾与环氧乙烷抽提反应机理的密度泛函理论研究

采用B3LYP/6-311G(d,p)方法研究了单重态亚锗基卡宾及取代亚锗基卡宾X₂Ge=C:(X=H, F, Cl, CH₃)与环氧乙烷的氧转移反应机理. 结果表明, 由于环氧乙烷中氧上的2p孤对电子向X₂Ge=C:中C上的2p空轨道迁移,形成了p→p授受键,从而生成了各中间体. 随着p→p授受键的不断加强(即C-O键的逐渐缩短),中间体经过渡态生成了抽提产物. 取代基的电负性是影响该类反应的主要因素,取代基的电负性越大,反应的活化能越小     

二甲基亚甲基硅烯与乙烯生成硅杂双环化合物反应机理的从头算研究

用CCSD(T)//MP2/6-31G^*方法研究了单重态二甲基亚烷基硅烯与乙烯生成硅杂双环化合物环加成反应的机理,根据该反应的势能面可以预言,该反应只有一条主反应通道. 该主反应通道所呈现的反应规律为：二甲基亚烷基硅烯中Si原子的3p空轨道与乙烯中的π轨道形成了π→p授受键,生成三元环中间体(INT1);扩环作用使INT1异构化为四元环硅烯(P2);P2中Si原子的sp³杂化使P2进一步与乙烯结合生成了硅杂双环化合物.     

Density Functional Theory Study of Mechanism of Cycloaddition Reaction Between Dimethyl-Silylene Carbene and Acetone

用密度泛函理论研究了单重态二甲基亚硅基卡宾与丙酮环加成反应的反应机理,势能面结果表明该反应有两条相互竞争的主反应通道. 反应规律为：二甲基亚硅基卡宾中的π轨道与π键化合物中π轨道的[2+2]环加成作用造成了扭曲四员环中间体和平面四员环产物的形成;平面四员环产物中卡宾C原子的不饱和性,导致了甲基迁移产物和硅杂双环化合物的生成.     

GeX2(X=F,Cl)与甲醛环加成反应机理的理论研究

在从头算方法HF/6311+G水平上研究了单重态GeX2(X=F,Cl)与甲醛的环加成反应,找到了反应的中间配合物和过渡态,并在MP4(SDTQ)/6311+G计算水平上进一步进行单点算,对得到的复合物以振动频率确认其驻点性质(过渡态和稳定态),讨论了其反应机理.结果表明,二氟锗烯与甲醛的环加成反应分两步进行,第一步生成中间配合物,是一个无势垒的放热反应;第二步是中间配合物异构化为产物%D二氟锗杂环氧甲烷,计算的反应势垒为196.4kJ/mol,是整个反应发生的控速步骤.而在二氯锗烯与甲醛环加成反应中,对应的控速步骤的能垒仅为125.7kJ/mol.与二氟硅烯与甲醛环加成反应相比,二氟锗烯与甲醛的环加成反应速率要慢一些,而二氯锗烯与甲醛环加成反应速率则与其相当.     

锗烯与异氰酸多通道反应的理论计算

采用密度泛函理论B3LYP方法研究了单重态GeH2与HNCO的反应机理。在B3LYP/6-311++G**水平上对反应物,中间体,过渡态进行了全几何参数优化,通过频率分析和IRC确定中间体和过渡态,用QCISD(T)/6-311++G**方法计算了各个驻点的单点能。计算表明单重态的锗烯与异氰酸的反应有抽提氧、插入N-H键、抽提亚氨基的共七条反应路径。采用经Winger校正的Eyring过渡态理论分别计算了1个大气压、不同温度下反应势垒较低通道的热力学及动力学性质,结果表明插入N-H键反应（GeH2+HNCO→IM7→TS6→P2）通道在温度400K~1400K内,有较高的平衡常数和反应速率常数,为主反应通道,主产物为GeH3NCO。     

锗烯与异氰酸多通道反应的理论计算

采用密度泛函理论B3LYP方法研究了单重态GeH₂与HNCO的反应机理.在B3LYP/6-311++G**水平上对反应物、中间体、过渡态进行了全几何参数优化,通过频率分析和内禀反应坐标（IRC）确定中间体和过渡态,用QCISD（T）/6-311++G**方法计算了各个驻点的单点能.计算表明单重态的锗烯与异氰酸的反应有抽提氧、插入N-H键、抽提亚氨基的反应路径.采用经Winger校正的Eyring过渡态理论分别计算了1个大气压、不同温度下反应势垒较低通道的热力学及动力学性质,结果表明插入N-H键反应（GeH₂+HNCO→IM7→TS6→P2）通道在温度400 K～1400 K内,有较高的平衡常数和反应速率常数,为主反应通道,主产物为GeH₃NCO.     

Theoretical Study on Mechanism of Cycloadditional Reaction Between Dichloro-Germylidene and Formaldehyde

用MP2/6-31G^*方法研究了单线态二氯亚甲基锗烯与甲醛环加成反应的反应机理,该反应有两条相互竞争的主反应通道,同时伴随着两中间体(INT3和INT4)副产物的生成. 第一条主反应通道所生成的物种为三员环中间体(INT1)和Ge-O顺位的四员环产物(P1);第二条主反应通道所生成的物种为Ge-O对位的扭曲四员环中间体(INT2)和氯迁移产物(P2);P1和INT2分别与甲醛(R2)的进一步作用而导致了两副产物的生成.     

锗的正电子表面态的测量研究

通过测量低能正电子入射到锗(Ge)靶的电子偶素产额随靶温度的变化,测定了在真空度为1.33×10^－4Pa时锗的正电子表面态的束缚能E_b=2.2eV;Ps形成的激活能E_a=0.2±0.01eV.讨论了高真空与超高真空条件下E_b,E_a的变化.     

掺纳米锗氧化硅的发光性能研究

由溶胶/凝胶法制备得到的GeO₂/SiO₂玻璃在700 ℃的条件下经H₂还原,得到具有奇特光致发光性质的Ge/SiO₂玻璃,该玻璃在室温条件下用246 nm（5.01 eV）的光激发时,能发射出很强的 392 nm（3.12 eV）、较强的 600 nm（2.05 eV）和次强的770 nm（1.60 eV） 的荧光.利用X射线衍射（XRD）、X射线光电子能谱（XPS）及透射电镜（TEM）实验证明,该玻璃能够发射3种不 关键词： 2')" href="#">Ge/SiO₂ Ge纳米晶粒 溶胶/凝胶法 光致发光     

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

Self-assembled Ge islands were grown on Si(100) substrate by Si₂H₆-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.     

氧化硅缓冲层对于退火形成锗量子点的作用研究

在化学氧化得到的二氧化硅薄层覆盖的硅衬底上,室温淀积锗膜并进行后期退火处理.实验表明,不同于传统退火过程形成大岛,通过一定工艺的控制可以获得高密度(~10¹¹ cm^-2)的均匀锗量子点.研究了后期退火温度对量子点的结构影响的局部反常规律并进行了原因分析.利用拉曼和荧光光谱研究了其应力和发光特性,发现在可见(500 nm)和近红外(1350 nm)的两个光致荧光峰出现. 关键词： 锗量子点 二氧化硅 退火     

Optical properties of amorphous films

We have analyzed the optical properties of a-Ge_30-xSb_xS₇₀ chalcogenide glass films (x=0,10,20 and 30 at%); the chalcogenide films were prepared by vacuum thermal evaporation. The optical-absorption data indicate that the absorption mechanism is non-direct transition. We found that the optical band gap, E_opt, decreases from 2.04±0.01 to 1.74±0.01 eV, whereas the refractive index increases with increasing Sb content. Data are analyzed by the Wemple equation, which is based on the single-oscillator model.     

Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces

Surface patterning is expected to influence the nucleation site of deposited nanostructures. In the present study, clean Si and SiO₂ surfaces were patterned by a nanolithographic process using a Focused Ion Beam (FIB). Ge was evaporated in ultra high vacuum at 873 K on these substrates, resulting in the formation of island arrays. Based on scanning tunneling microscopy and atomic force microscopy images, a statistical analysis was performed in order to highlight the effect of patterning on the size distribution of islands compared to a non-patterned surface. We find that the self-organization mechanism on patterned substrates results in a very good arrangement and positioning of Ge nanostructures, depending on growth conditions and holes distance, both on Si and SiO₂ surfaces.     

Li嵌入Mg2Ge的反应次序和电子结构变化

Mg₂Ge有望成为新的锂离子电池负极材料.使用基于平面波展开的第一性原理赝势法,计算并得到了Li嵌入Mg₂Ge负极材料时的反应次序.Li首先占据其中的间隙位置,占满间隙位置后随着嵌Li量的进一步增加,Li将逐步替位Mg₂Ge中一半的Mg位置,直到生成Li₂MgGe.计算结果表明,在整个嵌Li过程中主体材料的体积先膨胀后收缩,体积胀缩量很大,这是导致Mg₂Ge作为锂离子电池电极材料循环性能较差的重要 关键词： 锂离子电池 2Ge')" href="#">Mg₂Ge 反应次序 电子结构     

On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

The photoluminescence (PL) at ∼2.2-2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H₂O₂:HF at 50:1 volume ratio, and the other in a solution of HF:H₃PO₄:H₂O₂ at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeO_x (0<x<2), and free from any Ge nanoconstructions. It is also suggested from XANES that the latter type of chemically etched Ge samples comprise 8-9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at ∼2.3 eV for all samples. The PL behavior of the latter type of chemically etched Ge on annealing in different chemical environments (air or H) allowed us to conclude that the PL from these materials, as well as that from those Ge-based nanocrystalline materials reported in the literature, is from GeO_xs.     

Effects of junction defect healing in Germanium n-MOSFET through thermal annealing

In this paper, the impact of junction defect healing through thermal annealing in Ge n-metal-oxide-semiconductor field-effect transistors (MOSFETs) is thoroughly investigated. Germanium (Ge) is strongly affected by the presence of point defects within the crystal, which is the source of leakage current and low frequency noise. For MOSFET applications, these defects at the junction of the source and drain area are created by ion implantation. However, these can be significantly reduced by proper thermal treatment. Here, the effect of defect healing is investigated and presented through current–voltage characteristics of a n⁺/p diode and MOSFET I_D-V_G measurement, and secondary ion mass spectroscopy (SIMS).     

Numerical simulations on the AC response of flux motion in high-T c superconductors

An algorithm is developed to simulate the AC responses of the flux motion in high-T _c superconductors. To establish the reliability and effectiveness of this method, it is first employed to study the complex resistivity and compare it with some analytical results. The simulation results are found to be consistent with analytical calculations. Then, the method is applied to study an real experimental situation using the single flux motion model with regular pinning potential. It is found that, despite the simplicity of the model, our numerical results are actually in agreement with the experimental results qualitatively.     

High-resolution absorption measurements in gold doped Si/Ge alloys

High-resolution studies of a deep impurity in Si/Ge alloys are presented. It is shown that gold forms at least two different centers, a single substitutional defect and a gold pair. The energy structure and internal transitions of these defects were studied for different alloy compositions and implications of possible strain and alloying effects are briefly discussed.Dedicated to H.-J. Queisser on the occasion of his 60th birthday