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INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING |
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| Authors: | Gao Fei Huang Chang-jun Huang Da-ding Li Jian-ping Kong Mei-ying Zeng Yi-ping Li Jin-min and Lin Lan-ying |
| Affiliation: | Department of Physics, Shaanxi Normal University, Xi'an 710062, China; State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands. |
| Keywords: | Ge islands chemical etching photoluminescence Si2H6-Ge molecular beam epitaxy |
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