超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了InGaAsP/InGaAsP 级联电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distributed feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的器件 关键词： 超低压 选择区域生长 集成光电子器件 超短光脉冲     

光双二进制传输系统的性能研究

光双二进制信号的谱宽是传统二进制信号的一半,采用双二进制传输比二进制传输色散限制的中继距离可增加一倍.本文对采用传统光接收机的光双二进制传输系统用MATLAB进行了通信仿真.结果表明:在完全消光条件下,10 Gb/s双二进制信号在常规单模光纤上传输可达160 km,40 Gb/s双二进制信号在非零色散光纤上为30 km,均比二进制增加了一倍;详细考察了消光比对传输的影响,只有消光比大于25 dB时,双二进制相对于二进制传输的优越性才呈现出来.     

光的单边带传输的性能研究

对一种光单边带传输系统用MATLAB进行了仿真,结果表明：在完全消光条件下,10Gb/s单边带信号在常规单模光纤传输可达140 km, 而双边带仅为70 km;消光比对双边带传输和单边带传输的影响是不一样的. 双边带传输消光比为10 dB就够了, 单边带传输消光比要在20 dB以上,只有消光比大于20 dB时单边带传输相对于双边带传输的优越性才逐渐呈现出来.     

普通单模光纤传输系统的光纤光栅色散补偿研究

通过系统分析光纤光栅的耦合模理论 ,探索、优化光纤光栅的制作过程 ,研制了满足ITU T建议波长的优质光纤光栅。用双透镜和扫描移动平台结合相位掩膜板研制的光纤光栅分别成功实现了 4× 10Gb/s 4 0 0km和4× 10Gb/s 80 0km普通单模光纤传输系统的色散补偿 ,功率代价均小于 2dB ,且最佳功率代价为负值。同时对4× 10Gb/s 80 0km普通单模光纤传输系统的偏振模色散实施长时间的监测 ,系统偏振模色散小于 10 ps,提出了发展 10Gb/s的光通信系统更符合目前我国国情的见解。     

级联马赫-曾德尔干涉仪型不等带宽交错滤波器的设计

为了在10Gb/s+40Gb/s混合系统中提高光学奇偶交错滤波器的带宽利用率,提出了基于两级级联马赫-曾德尔干涉仪(MZI)的全光纤型不等带宽光学交错滤波器的设计方案。通过对耦合器分光比、干涉仪臂长差等结构参量的选择,详细分析了两级级联MZI的不等带宽交错滤波器的传输特性,并选取了理论优化计算的一组数据进行实验。数值分析和实验结果表明,该器件将50GHz的输入信号分离成信道间隔为100GHz的奇偶两路输出信号,其中在3dB处,奇数信道带宽大于30GHz用于10Gb/s传输,偶数信道带宽大于60GHz用于40Gb/s传输。该滤波器较传统的等带宽交错滤波器有更高的带宽利用率,在10Gb/s向10Gb/s+40Gb/s升级过程中作为复用/解复用器具有很大优势。     

基于半导体光放大器四波混频效应的多种调制格式的波长转换实验

实验报道了利用半导体光放大器(SOA)的四波混频(FWM)效应实现多种码型的波长转换.其中对于非归零(NRZ)信号实现了从单信道到三信道的多波长转换.调制速率从10 Gb/s到40 Gb/s均实现多波长转换.对于归零(RZ)信号分别实现了20 Gb/s和40 Gb/s的RZ格式的波长转换和40 Gb/s的载波抑制归零(CSRZ)格式的波长转换,利用光纤布拉格光栅(FBG)作为带陷滤波器消除共轭光和抽运光之间的串扰.对于非归零差分相移键控(NRZ_DPSK)信号分别实现了20 Gb/s和40 Gb/s的波长转换,利用实验室自制的光纤延时干涉仪进行NRZ-DPSK信号的解调.基于FWM效应的转换光的输出消光比大于7 dB,转换后消光比退化约为3 dB.     

4×10Gb/s 400km 啁啾光纤光栅色散补偿研究

介绍了利用光纤光栅成功实现了4×10Gb/s 400km G-652光纤的色散补偿，各信道传输部分在误码率为10-10时，无误码传输的功率代价均小于2dB，且最好的功率代价为负值- 关键词： 光纤光栅 色散补偿 功率代价     

一种不等带宽光学梳状滤波器

提出了一种新型—Michelson—三面镜FabryPerot型50GHz不等带宽光学梳状滤波器设计方案,分析和模拟表明:该器件将一路信道间隔为50GHz的输入信号分离成信道间隔为100GHz的奇偶两路输出信号,其中在3dB处,奇数信道带宽大于30GHz用于10Gb/s传输,偶数信道带宽大于60GHz用于40Gb/s传输对于将来的40Gb/s系统,该器件具有优势.     

光相位调制器和光强度调制器产生40GHz光载OFDM毫米波信号的传输性能比较

实验研究了分别采用光相位调制器和光强度调制器产生40GHz光载正交频分复用(OFDM)信号的毫米波光纤无线通信(ROF)系统,并比较了二者的传输性能。在中心站,将20GHz的射频(RF)正弦波信号与2.5Gb/s的OFDM信号混频后驱动相位调制器或强度调制器进行双边带(DSB)调制,产生的光载OFDM信号的毫米波经标准单模光纤(SSMF)传输到基站。在基站,经光纤布拉格光栅(FBG)滤除中心载波后的光调制信号经光电检测器转换成电调制信号,再与射频信号混频,恢复出基带OFDM信号,而分离出来的中心载波信号可以用于实现波长重用。实验验证了OFDM信号峰值-平均(峰均)功率比大小对系统误码率的影响。实验结果显示,在大入纤功率情况下,相位调制和强度调制产生的毫米波光信号经过50kmSSMF传输后,其功率代价分别为小于0.5dB和大于1dB。说明光相位调制器产生光载毫米波加载OFDM信号在光纤中的传输性能优于光强度调制器。     

光子灯笼模分复用系统MIMO-free高速传输实验

为考察无需多输入多输出模分复用系统的高速信号传输能力,采用模式选择光子灯笼型模式复用/解复用器构建了2×100 Gb/s双偏振正交相移键控模分复用通信实验系统,系统中用到的少模偏振控制器状态可由LP₀₁和LP_11b两个模式信道的信串比参数准确表征。测试了系统误码率与信串比关系,实现两个信道纠后无误码传输的条件为信串比约大于8 dB。当两个信道的信串比分别为14.25 dB和13.81 dB时,与背对背收发系统相比,纠后无误码阈值(10^-2)的接收光功率代价分别为1.40 dB和4.76 dB。分析了光纤衰减、偏振模色散和模式串扰对高速传输系统的影响,估算了串扰受限系统可支持的少模光纤传输距离约为30 km。     

Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of −18.9 dBm at bit-error-rate of 10⁻¹⁰ is confirmed.     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.     

Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector （SG-DBR） laser with a quantum-well electroabsorption modulator （QW-EAM） by combining ultra-low-pressure （55 mbar） selectivearea-growth （SAG） metal-organic chemical vapour deposition （MOCVD） and quantum-well intermixing （QWI） for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V.     

Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.     

InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550 nm波长附近的40 nm带宽范围内获得了约2.6 dB的通带平坦度,在1 550 nm通信波长处,器件的插入损耗低于10 dB.     

InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550nm波长附近的40nm带宽范围内获得了约2.6dB的通带平坦度,在1 550nm通信波长处,器件的插入损耗低于10dB.     

Experimental study of NRZ format wavelength conversion using electroabsorption modulator

In this paper, NRZ format wavelength conversion using cross absorption modulation (XAM) in InGaAsP MQW electroabsorption modulator (EAM) is investigated experimentally in detail for the first time, to the best of our knowledge. The influence of two key operating parameters, input signal power and bias voltage of EAM, on wavelength conversion performance is studied. Experimental results indicate that there exists optimal bias voltage for fixed input signal power and that there exists also optimal input signal power for fixed bias voltage and the lowest power penalty of 0.9 dB is obtained by optimizing these two parameters. The physical explanations are given for these results based on operating characteristic of EAM device. Finally, the probe light wavelength dependence of wavelength conversion is studied for span of 1530–1560 nm.     

Interference method of measuring the extinction coefficient of birefringent optical fibers

The extinction coefficient of a birefringent optical fiber (the ratio between the radiation power output of the polarization mode and the radiation power transferred from this mode to another one) characterizes the capability of a birefringent fiber to retain the polarization state of the radiation. In relatively short birefringent fibers (1–100 m), the extinction coefficient may reach 10⁴–10⁶. Such high values of the extinction coefficient are difficult to measure by standard techniques (excitation of one polarization mode by an incoherent source with subsequent recording of the light intensity at the output of the analyzer). An interference method of measuring the extinction coefficient of birefringent fibers is suggested. It is based on using a coherent source and measuring interference oscillations caused by an additional phase modulation at the input of the fiber. This method does not require precise polarization matching between the laser source and fiber and considerably loosens requirements for the polarizer-analyzer extinction and resolution of the photodetector. As a result, using simple standard components (semiconductor laser, film polarizer, and photodetector), one can measure extinction coefficient as high as 10⁶. The suggested interference method of measuring the extinction coefficient of birefringent fibers receives a theoretical analysis, and experimental data obtained for 2- to 1000-m-long fibers are presented.     

光时分复用(OTDM)系统中基于电吸收调制器(EAM)的短脉冲光源及解复用器的设计考虑

研究了电吸收调制器(EAM)的衰减随外加反向电压增加而指数增加的情形下,短脉冲光源的脉冲输出和解复用器的开关窗口对EAM的消光效率、反向DC偏置电压以及正弦RF驱动信号的幅度等参量的依赖关系.在基于EAM的短脉冲光源中,输出脉冲的消光比等于EAM消光效率η与正弦驱动电压峰峰值V_pp的乘积,输出光脉冲的消光比和脉宽均与EAM的反向偏置电压无关,但输出脉冲的峰值功率与η、V_pp和V_b都有关系.在基于EAM的解复用器中,为了使解复用器的开关窗口近似为矩形,可利用EAM的削波效应,使V_pp/2>V_b.在EAM的消光效率η已知时,通过仔细设计反向DC偏置电压V_b和正弦驱动电压的峰峰值V_pp,达到OTDM解复用器所需要的开关窗口形状、宽度和消光比.