掺杂浓度及掺杂层厚度对Si均匀掺杂的GaAs量子阱中电子态结构的影响

本文通过自洽地求解薛定鄂方程及泊松方程计算了在温度T=0, 有效质量近似下, Si均匀掺杂的GaAs/AlGaAs量子阱系统的电子态结构. 研究了掺杂浓度及掺杂层厚度对子带能量, 本征包络函数, 自洽势, 电子密度分布, 及费米能量的影响. 发现在给定掺杂浓度下, 子带能量随掺杂层厚度的增加单调递减, 自洽势的势阱变宽变浅, 电子密度分布变宽, 峰值变低; 在给定掺杂层厚度下, 随掺杂浓度的增加子带能量及费米能级单调递增, 自洽势阱变深变陡变窄, 电子密度分布的峰值变高, 集中在中心. 关键词： 掺杂 量子阱 电子结构 半导体GaAs     

玻色-费米超流混合体系中的相互作用调制隧穿动力学

研究了玻色-费米超流混合体系中的相互作用调制隧穿动力学特性,其中玻色子位于对称双势阱中,费米子位于对称双势阱中心的简谐势阱中.采用双模近似方法得到描述双势阱玻色-爱因斯坦凝聚的动力学特性方程组,并将其与简谐势阱中分子玻色-爱因斯坦凝聚的Gross-Pitaevskii方程进行耦合.通过对不同参数下玻色-费米混合体系中的隧穿现象进行数值研究,发现简谐势阱中费米子与双势阱中玻色子的相互作用使双势阱玻色-爱因斯坦凝聚的隧穿动力学特性更加丰富.不但驱使双势阱中玻色-爱因斯坦凝聚从类约瑟夫森振荡转变为宏观量子自囚禁,而且宏观量子自囚禁表现为三种不同的形式:相位与时间呈负相关并随时间单调减小的自囚禁、相位随时间演化有界的自囚禁以及相位与时间呈正相关并随时间单调增大的自囚禁.     

囚禁有限unitary费米气体的热力学性质

应用分数不相容统计,研究了三维简谐势阱中有限unitary费米气体在绝对零度和有限温度下的热力学性质,并与势阱中满足热力学极限条件的unitary费米气体进行了比较.结果表明:绝对零度时有限系统的费米能、粒子平均能量随粒子数的增加而增大,并以满足热力学极限系统的对应物理量为上限,有限系统的费米能、粒子平均能量随势阱边界变化存在极大值.有限温度条件下给定粒子数时,有限系统的粒子平均能量、粒子平均熵、粒子平均热容量分别存在对应的特征温度,当温度等于物理量对应的特征温度时,有限系统与满足热力学极限系统的同一物理量相等,低于(或高于)物理量对应的特征温度时,有限系统的物理量将大于(或小于)满足热力学极限系统的同一量.给定温度条件下,有限系统粒子平均能量、粒子平均熵、粒子平均热容量分别存在对应的特征粒子数,当粒子数等于物理量对应的特征粒子数时,有限系统与满足热力学极限系统的同一物理量相等,少于(或多于)物理量对应的特征粒子数时,有限系统的物理量将小于(或大于)满足热力学极限系统的同一量.     

类氢氖在高温高密度等离子体中的光谱漂移

 采用离子球模型，通过自洽求解Poisson方程和Dirac方程，得到氖的类氢离子低能级组态的能级能量随等离子体电子温度和电子密度的变化关系，进一步研究了等离子体电子温度和电子密度对光谱漂移的影响。结果表明：光谱漂移随着等离子体电子密度的增大而增大，随着电子温度的升高而减小；谱线精细结构分裂随着电子密度的增大而减小，随着电子温度的升高而增大。等离子体对束缚电子的屏蔽是决定光谱漂移的主要原因。这些变化规律不仅对等离子体光谱模拟结果产生影响，而且使实验上观测光谱的相对或绝对漂移成为可能，从而为高密度等离子体诊断的新方法提供了理论依据。     

等离子体效应对碳的类氢离子能级的影响

通过在狄拉克方程中考虑德拜休克尔(Debye-Hückel)屏蔽势,研究了类氢离子C5 低能级能量1s(2S1/2),2s(2S1/2),2p(2P1/2和2P3/2)随等离子体电子温度及电子密度的变化规律,计算得到类氢离子C5 能级能量及能级电离势随等离子体环境的变化关系。同时,拟合得到了基于德拜休克尔屏蔽势下相当好的束缚态能级能量随等离子体环境变化的解析公式,利用该公式得到了类氢离子C5 相应各能级发生压致电离的临界电子密度,其结果与其它文献比有很好的可比性。结果表明:束缚态能级能量随等离子体电子温度的升高而减小,随等离子体电子密度的增大而增大。能级能量百分漂移量的对数值与等离子体电子密度的对数值以及等离子体电子温度的对数值之间均呈现出近似线性关系。对计算等离子体电离态分布及光谱模拟具有一定的意义。     

一维有限深方势阱能量本征方程的泰勒级数解和二次近似解

一维有限深方势阱能量本征方程的求解受限于超越方程,无法严格求解.本文将奇、偶宇称情况的超越方程归结为一个方程,自洽地给出两种近似解析解：一阶泰勒级数解和二次近似解.分析二者适用范围并做误差分析,发现泰勒级数解可以很好地理解能谱随量子数n平方变化的数值解(即,所谓n平方律),但在特定参数R下失效,该参数正比于势阱宽度乘以势阱高度开方.二次近似解对所有参数R都适用,能谱在大R极限下,可退化为精确求解的无限深势阱情况.对于任意参数R,二次近似波函数的保真度始终大于99.7%.     

双δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In_0.65Ga_0.35As/In_0.52Al_0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，通过对纵向磁电阻SdH振荡的快速傅里叶变换分析，获得了各子带电子的浓度，并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程，自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明，势垒层的掺杂电子几乎全部转移到了量子阱中，转移率在95%以上. 关键词： SdH振荡 二维电子气 FFT分析 自洽计算     

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采用离子球自洽玻尔兹曼方程和泊松方程,得到了类氦Cr离子kα线系的两条电偶极辐射光谱能量随不同等离子体环境的变化关系.分析了光谱能量漂移量和kα线交换能随等离子体环境变化的关系,给出了光谱能量漂移量随等离子体环境参数变化的公式.结果表明,光谱能量漂移量随等离子体电子密度变化呈现出很好的线性.关系.     

双δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-deHaas(SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.     

p-GaN/p-AlxGa1-xN异质结界面处二维空穴气的性质及其对欧姆接触的影响

通过自洽求解一维泊松方程和薛定谔方程,得到了p-GaN/p-Al_xGa_1-xN异质结界面处的价带结构和二维空穴气（2DHG）分布,研究了A1组分和压电极化效应对界面处2DHG性质的影响,给出了异质界面处2DHG的面密度、浓度分布以及价带结构.实验结果表明:随着Al组分的增加,异质结界面处势阱明显加深变窄,这使得2DHG的峰值密度加速上升,也使得面空穴密度近直线上升;压电极化效应也明显使界面处势阱加深变窄,并且使费米能级向势垒顶端移动,峰值浓度的位置向界面处移动;另外,价带带阶高度和受主杂质浓度对2DHG的影响较小.利用这层2DHG制作的p-Al_xGa_1-xN的欧姆接触,电流电压特性明显好于直接制作的电极,说明了2DHG可以显著改善p-Al_xGa_1-xN的欧姆接触性能.     

Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

The variation of the electronic parameters in the subband as a function of the In_yGa_1−yAs quantum well width in modulation-doped strained Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were investigated by means of Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements. The fast Fourier transform (FFT) of the S-dH oscillations and the Hall-effect data showed that the carrier density and the mobility of the two-dimensional electron gas (2DEG) occupied in the subband increased as the quantum well width increased. The increase in the 2DEG density with increasing the In_yGa_1−yAs well width originated from an increase in the energy difference between the energy level of the electronic subband and Fermi energy, and the increase in the 2DEG mobility is attributed to a decrease of the scattering source. The electronic subband energies, the corresponding wavefunctions, and the Fermi energies in the Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were calculated by a self-consistent method taking into account the exchange-correlation effect together with the strain and nonparabolicity effects. These results indicate that the electronic parameters in Al_xGa_1−xAs/In_yGa_1−yAs/GaAs strained single quantum wells are significantly dependent on the quantum well width.     

由N-E-V分布及赝势法研究弱磁场中弱相互作用费米子气体的热力学性质

基于低温下量子系统的相关实验多是在体积、能量和粒子数都可变的外场束缚下进行的事实, 由体积、能量和粒子数可变的完全开放系统的统计分布(N-E-V分布)研究了弱磁场中弱相互作用费米系统的热力学性质. 首先求出了一般情况下由费米积分表示的内能和热容的解析表达式. 在此基础上, 又给出了在低温极限条件下内能与热容的解析表达式和数值计算结果, 并将N-E-V分布(粒子数密度变化)的结果与赝势法(粒子数密度不变)的结果进行了比较. 结果表明: N-E-V分布方法的计算结果总是补偿赝势法计算结果的过度偏差. 由N-E-V 分布方法所得结果最特异之处在于: 在低温条件下, 弱磁场中弱相互作用费米系统存在一相变温度t_c, 其正处于费米系统发生玻色-爱因斯坦凝聚(BEC)和费米原子形成库珀对的超流状态(BCS)相变及BEC-BCS跨越的温度范围内, 且不随反映弱相互作用大小和特征的散射长度a (a<0引力, a>0斥力)变化, 但随弱磁场的加强而降低, 即弱磁场可调节该相变温度. 磁场为零时, 相变温度最高, 为费米温度的0.184倍.     

Electronic structure of two coupled Si δ-doped GaAs as dependent on the donor thickness

For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si -doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrödinger and Poisson equations self-consistently. We thus find the confining potential, the electronic density, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy. From the self-consistent calculation, we have seen that the effective potential profile and the electronic density of two coupled Si -doped GaAs structure are sensitive to the donor thickness while the subband energies and the subband occupations are not sensitive to the donor thickness . PACS 73.20.Dx; 73.20.At; 73.90.+f     

Density of states in a cylindrical GaAs/AlxGa1−xAs quantum well wire under tilted laser field

Within the effective-mass approximation the subband electronic levels and density of states in a semiconductor quantum well wire under tilted laser field are investigated. The energies and wave functions are obtained using a finite element method, which accurately takes into account the laser-dressed confinement potential. The density of states obtained in a Green's function formalism is uniformly blueshifted under the laser's axial field whereas the transverse component induces an additional non-uniform increase of the subband levels. Our results confirm that the tilted laser field destroys the cylindrical symmetry of the quantum confinement potential and breaks down the electronic states' degeneracy. Axial and transversal effects of the non-resonant laser field on the density of states compete, bringing the attention to a supplementary degree of freedom for controlling the optoelectronic properties: the angle between the polarization direction of the laser and the quantum well wire axis.     

Flux creep and flux flow for thallium ceramics in a pulsed magnetic field

The resistive properties of Tl-ceramics with T_c|=0=114 K were investigated in a pulsed magnetic field (B) up to 30 T and in the temperature range of 4.2 K<T<140 K. It was shown that the character of the field dependence of the resistance differs qualitatively in high-and low-temperature regions. At low (T80K) temperatures the dynamic magnetoresistance arising in the sample is analogous to that observed earlier in LaSrCuO [1] and YBaCuO [2] ceramics. This magnetoresistance is defined by the magnetic field variation rate and leads to the appearance of a minimum at the maximum of the magnetic field pulse, i.e. at . In the region of high temperatures (80 K T<T_c) or magnetic fields (at T60K) the sample resistance rises monotonically with B increase, and dynamic resistance is not observed. In this temperature range the existence of a scaling relation is shown (here B^* and T^* meet the condition k=(B^*, T^*)/ _n(T^*)=const) for the ceramics resistance (B,T), which can be represented as . An estimate for the upper critical field B_c2(0)B_o=1030±40 T is obtained.     

不同磁场环境下Heisenberg XXZ自旋链中的热量子失协

本文研究了不同磁场环境下一维Heisenberg XXZ自旋链中两量子比特的热量子失协特性. 在四种不同的磁场环境下: 1) B₁=B₂=0 (无磁场); 2) B₁≠0, B₂=0 (磁场只作用于其中一个量子比特); 3) B₁=B₂ (均匀磁场); 4) B₁=-B₂ (非均匀磁场), 对分别作用在每个量子比特上的磁场B₁和B₂对其量子关联的影响作了详细的讨论, 且数值计算和比较了其量子失协和量子纠缠的异同. 结果显示: 在有限温度下, 量子失协相比于量子纠缠更普遍, 且非均匀磁场相比于均匀磁场对量子失协和量子纠缠更有用, 更有利于量子通讯和量子信息处理过程. 关键词： 量子关联 纠缠 量子失协     

表面极化子光学声子平均数的磁场和温度依赖性

采用变分法、幺正变换和拉格朗日乘子法,研究了有限温度下纯二维晶体中表面磁极化子的性质.讨论了表面光学声子平均数、磁极化子振动频率λ与磁场B、温度T及Lsgrange乘子u之间的关系.对KCl晶体进行了数值计算,结果表明:磁极化子振动频率、表面光学声子平均数均随磁场B的增强而增加,且随温度T升高而增加.当bgrange乘子u超出慢电子范围时磁极化子振动频率、表面光学声子平均数均随u增加而增大且变化越来越显著.     

Feature of the magnetotransport of a quasi-one-dimensional electrons on the superfluid helium

The magnetotransport in a nondegenerate quasi-one-dimensional (Q1D) electron system over superfluid helium has been investigated experimentally. The measurements are performed in the presence of a perpendicular magnetic field B up to 2.6 T in the temperature range T=0.48–2.05 K in the system of conducting channels of 100–400 nm width. It is shown that the value of longitudinal magnetoresistance ρ_xx increases with B. In the electron-gas scattering region (T>0.9 ), the behaviour of ρ_xx agrees with classical Drude law. In the quantum transport regime, the self-consistent Born approximation (SCBA) theory for a 2D electron system over liquid helium describes the experimental data qualitatively. The deviation due to the difference of the experimentally studied Q1D system of the electrons in a parabolic potential well differs from theoretically analysed one. The experimental data agree with the theoretical calculation for the Q1D electron system at the weak magnetic field and the low temperature.

The negative magnetoresistance of the conducting channels has been observed in both the gas- and the ripplon-scattering region. These effects have been explained by weak carrier localization on the gas atoms at high temperature and by display of the quantum magnetotransport features in a mesoscopic system at low temperature.     

Electronic subband of single Siδ-doped GaAs structures

We have theoretically investigated the subband structure of single Si δ -doped GaAs inserted into a quantum well at T =  0 K. We will discuss the influence of the δ -doping concentration, the δ -layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two different models: (i) a uniform distribution and (ii) a nonuniform distribution. In this paper, the nonuniform distribution is different from the Gaussian distribution use of other authors. The electronic structures have been calculated by solving the Schrödinger and Poisson equations self-consistently. We thus find the confining potential, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy.