估算等离子体效应对类氢离子束缚态能级能量影响的新公式

在均匀电子气模型下,通过求解Dirac方程,计算了类氢离子束缚态能级能量与等离子体密度的关系,得到了能近似估算能级能量随等离子体密度变化的新拟合公式,该公式同样可以用以估算不同束缚态能级发生压致电离时的临界电子密度.通过与自洽场离子球模型计算结果的比较,作为一种简单和快捷的计算方法,均匀电子汽模型在近似计算束缚态能级能量及压致电离临界电子密度方面是自洽场离子球模型得很好近似方法.     

类氢氖基态电离势随等离子体温度密度的变化

采用自洽场离子球模型,研究类氢氖基态1s的电离势随等离子体电子温度及电子密度的变化规律,计算得到基态电离势的百分偏移量随等离子体电子密度的变化关系,拟合结果表明两者的对数值满足很好的线性关系.该结果对计算等离子体电离态分布及光谱模拟具有一定意义.     

类氢氖在高温高密度等离子体中的光谱漂移

 采用离子球模型，通过自洽求解Poisson方程和Dirac方程，得到氖的类氢离子低能级组态的能级能量随等离子体电子温度和电子密度的变化关系，进一步研究了等离子体电子温度和电子密度对光谱漂移的影响。结果表明：光谱漂移随着等离子体电子密度的增大而增大，随着电子温度的升高而减小；谱线精细结构分裂随着电子密度的增大而减小，随着电子温度的升高而增大。等离子体对束缚电子的屏蔽是决定光谱漂移的主要原因。这些变化规律不仅对等离子体光谱模拟结果产生影响，而且使实验上观测光谱的相对或绝对漂移成为可能，从而为高密度等离子体诊断的新方法提供了理论依据。     

等离子体屏蔽效应对类氢离子束缚态的影响

在Debye屏蔽近似下,通过求解Schrödinger方程,计算了处于等离子体中的类氢离子的束缚态能量本征值与本征函数. 研究了氢原子和类氢Fe25+离子的n l ( n =1-4, l = 0-3)态能级随Debye 屏蔽长度λ的变化规律. 进一步,分析了等离子体屏蔽效应随主量子数n及角量子数l的变化规律, 发现对于给定的l, 等离子体屏蔽效应随主量子数n的增加而增大;对于给定的n,等离子体屏蔽效应随角量子数l 的增大而减小. 最后,我们分析了等离子体环境中类氢等电子序列离子的能级和波函数随屏蔽参数λ的变化规律,发现随着原子序数增大,等离子体屏蔽效应的影响逐渐变小.     

基于等离子体环境涨落的原子结构计算模型

本文将等离子体核聚变反应截面研究中利用等离子体环境涨落进行修正了的Debye-Hückel屏蔽势推广到计算等离子体中辐射离子束缚态的能级结构. 通过Tsallis参数q的变化,在等离子体辐射离子束缚态能级结构的计算中加入等离子体参数涨落的平均效应,即,等离子体动力学. 具体给出了利用修正的Debye-Hückel屏蔽势对类氦铝束缚态能级结构的计算结果. 结果表明基于这种修正的屏蔽势,自由电子的极化分布具有和线性Debye-Hückel屏蔽势不同的结构. 这种通过等离子体涨落分布对屏蔽势函数进 关键词： 等离子体中的原子结构 等离子体环境涨落 修正了的Debye-Hückel屏蔽势     

关于氢等离子体光谱谱线迭合问题

本文首先求解了电子在级数型势场中的定态薛定谔方程条件是r→∞时V(r)→0;t≤2。得到决定电子定态能级和波函数的几个公式。作为这些公式的应用,文中以完全电离等离子体为例,利用德拜势讨论了氢等离子体光谱谱线的加宽和谱线的迭合问题。     

等离子体效应对类氦氖Kα线系电偶极辐射的影响

采用离子球模型，通过自洽求解Boltzmann方程和Poisson方程，得到类氦氖离子Kα线系的两条电偶极辐射光谱能量随等离子体环境的漂移.结果显示，Kα线系电偶极谱线随等离子体电子密度增大发生红移，红移量与等离子体电子密度有近似的正比关系；随着等离子体电子温度的降低，光谱红移对等离子体电子密度的敏感性增大.另外，所研究的两条谱线间的能量间隔随等离子体电子密度的增大而减小，减小量随等离子体电子密度的变化也呈现出近似的线性规律.值得注意的是，类氦氖Kα线系中两条电偶极谱线分别为互组合线与共振谱线，而其能量差就是1s2p(³P₁)的交换能，因此进一步发现能级中交换能将随等离子体环境变化的规律.所观察到的光谱红移和精细结构分裂在高密度等离子体中都有明显的变化，对探索高密度等离子体的诊断新方法有重要意义. 关键词： 光谱漂移 交换能 等离子体 类氦离子     

等离子体对电子间相互作用的屏蔽效应研究

在计算等离子体环境中的原子结构时,一般情况下只考虑等离子体对核-电子相互作用的屏蔽,较少考虑其对电子-电子相互作用的屏蔽.本文采用MCDHF (multi-configuration Dirac-Hartree-Fork)方法结合屏蔽势研究了电子-电子相互作用的等离子体屏蔽对原子结构参数的影响随电子密度、电子温度、核电荷数和束缚电子个数的变化规律.结果表明,对于类氦离子的基态和第一激发态,等离子体对电子-电子相互作用的屏蔽引起的能量移动量、跃迁能移动量和跃迁几率移动量分别随着电子密度和电子温度的升高而不断增大和减小;随着核电荷数的增大,能量移动量逐渐增大并趋于稳定值,跃迁能移动量和跃迁几率移动量逐渐减小并趋于0.能量移动量随着束缚电子个数的增加而增大.当满足电子密度(束缚电子个数)大于或者等于其临界值以及电子温度(核电荷数)小于或者等于其临界值任意一条件时,等离子体对电子-电子相互作用的屏蔽效应不可忽略.     

等离子体效应对类氦氖Kα线系电偶极辐射的影响

采用离子球模型,通过自洽求解Boltzmann方程和Poisson方程,得到类氦氖离子Kα线系的两条电偶极辐射光谱能量随等离子体环境的漂移.结果显示,Kα线系电偶极谱线随等离子体电子密度增大发生红移,红移量与等离子体电子密度有近似的正比关系;随着等离子体电子温度的降低,光谱红移对等离子体电子密度的敏感性增大.另外,所研究的两条谱线间的能量间隔随等离子体电子密度的增大而减小,减小量随等离子体电子密度的变化也呈现出近似的线性规律.值得注意的是,类氦氖Kα线系中两条电偶极谱线分别为互组合线与共振谱线,而其能量差就是1s2p(3P1)的交换能,因此进一步发现能级中交换能将随等离子体环境变化的规律.所观察到的光谱红移和精细结构分裂在高密度等离子体中都有明显的变化,对探索高密度等离子体的诊断新方法有重要意义.     

等离子体屏蔽效应对类氢离子能级结构和辐射跃迁性质的影响

在Debye-Hückel屏蔽近似下,基于相对论Dirac-Fock方法,发展了包括等离子体屏蔽效应的自洽场计算程序.使用该程序研究了等离子体屏蔽效应对类氢离子能级结构和辐射跃迁性质的影响.结果表明,当原子处于等离子体环境中,所有束缚态能级向连续态移动, 移动量随着屏蔽长度的减小而增大.振子强度随屏蔽长度的变化也表现出了相同的规律.进一步分析了相对论效应和等离子体屏蔽效应的耦合,发现对于中Z元素,相对论效应和等离子体屏蔽效应存在较强的耦合.讨论了等离子体屏蔽效应对原子精细结构能级的影响.计算发现,由于等离子体屏蔽效应,原子的能级次序发生了变化,κ简并被消除. 关键词： 等离子体屏蔽 Debye-Hückel 模型 能级结构 跃迁概率     

Atomic structure and transition properties of H-like Al in hot and dense plasmas

The atomic structure and transition properties of H-like Al embedded in hot and dense plasmas are investigated using modified GRASP2 K code. The plasma screening effect on the nucleus is described using the self-consistent field ion sphere model. The effective nuclear potential decreases much more quickly with increasing average free electron density,but increases slightly with increasing electron temperature. The variations of the transition energies, transition probabilities,and oscillator strengths with the free electron density and electron temperature are the same as that of the effective nuclear potential. The results reported in this work agree well with other available theoretical results and are useful for plasma diagnostics.     

Atomic collision processes relevant for heavy ion beam probes

Atomic collision processes of fast Tl and Cs ions with particles in a high temperature fusion plasma are investigated. At low beam energies (<5 MeV), ion impact collisions and charge exchange processes can be neglected compared to electron ionization processes. At beam energies above 5 MeV and high plasma ion temperatures, collisions with ions start to contribute significantly to signal generation and attenuation. Also, collisions with the neutral background gas in the beamlines can attenuate the ion beam significantly and lower the signal level, if the vacuum pressure is above 10^-4 Torr. For the heavy ion beam probes operating today, only electron impact ionization processes are important and accurate predictions of the secondary signal level and electron density profile measurements are possible because of the good knowledge of electron impact ionization cross sections for Cs ⁺ and Tl⁺ ions     

Plasma Diagnostics Using K‐Line Emission Profiles of Silicon

Modifications of K‐line profiles due to a warm dense plasma environment are a suitable tool for plasma diagnostics. We focus on Si K_α emissions due to an electron transfer from 2P to 1S shell. Besides 2P fine structure effects we also consider the influence of excited and higher ionized emitters. Generally spoken, a plasma of medium temperature and high density (warm dense matter) is created from bulk Si the greater part of atoms is ionized. The high energy of K_α x‐rays is necessary to penetrate and investigate the Si sample. The plasma effect influences the many‐particle system resulting in an energy shift due to electron‐ion and electron‐electron interaction. In our work we focus on pure Si using LS coupling. Non‐perturbative wave functions are calculated as well as ionization energies, binding energies and relevant emission energies using the chemical ab initio code Gaussian 03. The plasma effect is considered within a perturbative approach to the Hamiltonian. Using Roothaan‐Hartree‐Fock wave functions we calculate the screening effect within an ion‐sphere model. The different excitation and ionization probabilities of the electronic L‐shell and M‐shell lead to a charge state distribution. Using this distribution and a Lorentz profile convolution with a Gaussian instrument function we calculate spectral line profiles depending on the plasma parameters. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Relativistic calculations of electron-impact ionization for highly charged hydrogen-like ions

Electron-impact ionization cross-sections and rate coefficients of the 1s ground state for H-like C, O, Mg, Ar, Fe, Cu, As, Kr, Y, Mo ions with incident electron energies up to 15 times the ionization threshold energy have been systematically calculated by the relativistic distorted-wave Born exchange (DWBE) approximation. The comparison of the result with the experimental data, other theoretical calculations and recommended values shows the very good agreement. The influence from relativistic and the lowest order QED effect in the calculation is discussed. The calculated ionization cross-sections are fitted by empirical formulas. These fits can be readily integrated over a relativistic Maxwellian electron distribution function to obtain rate coefficient for plasma modeling.     

AlK壳层等离子体辐射谱模型的比对

碰撞辐射模型的比对研究对校验发展等离子体辐射谱模型、提高等离子体参数的诊断精度具有重要意义. 基于Al等离子体, 对常用的辐射模型代码FAC和FLYCHK K壳层辐射谱模型开展了比对研究, 详细比较了它们的离子丰度、特征线强度、谱发射率曲线和吸收系数曲线等特征, 并根据各能态的速率方程, 从FAC和FLYCHK模型的结构特点出发, 分析了造成这些差异的原因. FAC 和FLYCHK计算得到的类H、类He离子n=2, n=3激发态数密度有显著差异, 进而引起特征线发射率及其比值(He-IC/He-αup, He-βup/H-βup)的差异, 从而对等离子体参数的诊断结果产生影响. 除了模型中采用的能级结构和碰撞辐射过程速率外, 计算结果显著地受到FAC 和FLYCHK 模型结构的影响. n=2激发态数密度的差异是由FAC和FLYCHK分别采用能级和超组态(组态)的方式构建n=2激发态的速率方程而引起的, 而FAC代码忽略了n=3与更高激发态之间的碰撞耦合过程, 是引起n=3激发态数密度差异的原因. 主要特征线的吸收系数与基态能级的数密度相关, 受到激发态数密度的影响较小, 因此与谱发射率曲线相比, FAC和FLYCHK计算结果的差异更小.     

An effective analytical potential including plasma effects

In this work, we have developed a method to build an effective analytical potential for ions in slightly nonideal plasmas. This proposed potential is obtained from an analytical isolated potential with one or two parameters depending on the total number of electrons of the ion. The plasma effects are included by means of the linearized Debye-Hückel approximation taking into account the reaction of the plasma-charge density to the optical electron. Due to the influence of the plasma over the atomic potential, this permits to obtain level energies and wave functions as a function of the inverse of Debye radius, the quantum numbers, the nuclear charge, the bound electron number and the ionization state of the ion. Also, we compare the analytical effective potential proposed in this paper with other ones very well known in the available literature.     

Formation of excited states of atoms and ions in laser plasma from CuInS2

Emission spectra and the energy distribution of the excited-state population density of atoms and ions in erosion laser plasma from CuInS₂ with various crystal-structure orderings are analyzed. It is shown that increased ordering of the target crystal structure causes the excited-state energies of indium atoms generated in the laser erosion plume to increase and that sulfur atoms always emit only in transitions from highly excited states. The ratio of relative ion concentrations in the laser plasma plume is Cu⁺/In⁺/S⁺ = 0.3/0.08/2, which corresponds neither to the atomic ratio of Cu/In/S (1/1/2) in the target nor to the ratio of ionization energies. The results are explained by recombination processes for ions and by the atomization specifics of the CuInS₂ target exposed to long-wavelength radiation. The atomization consists essentially of dissociative processes expressed by CuInS₂ → CuInS + S and CuInS₂ → Cu + InS + S. The electron temperature of polycrystal (single-crystal) plasma at a distance of 1 mm from the target is 0.3 eV (0.4 eV) for atoms and 1.3 eV (2.7 eV) for ions and varies negligibly for plasma up to a distance of 7 mm from the target. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 217–223, March–April, 2008.