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通过自洽求解一维泊松方程和薛定谔方程,得到了p-GaN/p-AlxGa1-xN异质结界面处的价带结构和二维空穴气(2DHG)分布,研究了A1组分和压电极化效应对界面处2DHG性质的影响,给出了异质界面处2DHG的面密度、浓度分布以及价带结构.实验结果表明:随着Al组分的增加,异质结界面处势阱明显加深变窄,这使得2DHG的峰值密度加速上升,也使得面空穴密度近直线上升;压电极化效应也明显使界面处势阱加深变窄,并且使费米能级向势垒顶端移动,峰值浓度的位置向界面处移动;另外,价带带阶高度和受主杂质浓度对2DHG的影响较小.利用这层2DHG制作的p-AlxGa1-xN的欧姆接触,电流电压特性明显好于直接制作的电极,说明了2DHG可以显著改善p-AlxGa1-xN的欧姆接触性能. 相似文献
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电压调制变色有机电致发光器件中的能量传递 总被引:1,自引:1,他引:0
研究了不同掺杂浓度下PVK:Rubrene的光致发光及电致发光的特性。发现掺杂浓度较低的PVK:Rubrene的光致发光与电致发光有较大差别,这是Foerster能量传递及电致发光中陷阱中的电子对空穴的吸引作用使得PVK激子在光致发光和电致发光中的复合速率不同造成的。同时各掺杂浓度在5wt%以下的PVK:Rrbrene发光随电压的增加呈现变色,这是能量传递不完全时,未参与能量传递的PVK激子复合速率随电压升高增大的结果。 相似文献
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In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano-metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 μm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source. 相似文献
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