Numerical study of performance characteristics of deep violet InGaN DQW laser diodes with AlInGaN quaternary multi quantum barrier electron blocking layer

The performance characteristics of deep violet In_0.082Ga_0.918N/GaN double quantum well (DQW) laser diodes (LDs) with different electron blocking layer (EBL) including a ternary AlGaN bulk EBL, a quaternary AlInGaN bulk EBL and ternary AlGaN multi quantum barrier (MQB) EBL has been numerically investigated. Inspired by the abovementioned structures, a new LD structure with a quaternary AlInGaN MQB EBL has been proposed to improve the performance characteristics of the deep violet InGaN DQW LDs. Simulation results indicated that the LD structure with the quaternary AlInGaN MQB EBL present the highest output power, slope efficiency and differential quantum efficiency (DQE) and lowest threshold current compared with the above mentioned structures. They also indicated that choosing an appropriate aluminum (Al) and indium (In) composition in the quaternary AlInGaN MQB layers could control both piezoelectric and spontaneous polarizations. It will decrease the electron overflow from the active region to p-side and increased the contribution of electron and hole carriers to the radiative recombination effectively. Enhancing radiative recombination in the well using the quaternary AlInGaN MQB EBL also increased the optical output power and optical intensity.     

Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation

GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high or negative characteristic temperature (T ₀). In this work, the temperature characteristics of blue LDs having InGaN double quantum-well (QW) active region are investigated using numerical simulation. It is found that the T ₀ is greatly influenced by the n-type doped barrier between the QWs and a negative T ₀ can be observed for the LD structure with a heavily doped barrier. The negative T ₀ of InGaN blue LDs is mainly attributed to the decrease of the Auger recombination rate at the p-side QW with increasing temperature as a result of the thermally enhanced hole transport from the p-side to the n-side QW.     

反射式倒装对1 300 nm激光器性能改善的分析

对AlGaInAs多量子阱1 300 nm FP激光器进行反射式倒装封装,在热沉上靠近激光器出光端面约10~20 μm的区域采用Au反射层,对器件垂直方向出光进行反射。测试结果显示,与常规封装相比,采用这种结构封装芯片垂直发散角从34.5°降低至17°,器件单模光纤的平均耦合功率从1 850 μW提高至2 326 μW,耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量,结果表明：与常规封装器件相比,采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA,饱和输出功率从37 mW提高至42 mW,热阻从194 K/W降低至131 K/W。最后对两种器件在95℃环境温度、100 mA电流下进行加速老化实验,老化结果显示：在老化条件下,器件衰退系数从常规封装的4.22×10^-5降低至1.06×10^-5,寿命从5 283 h提高至21 027 h。     

One-dimensional numerical analysis of transistor lasers

We demonstrate one-dimensional numerical analysis of transistor lasers (TLs). The high frequency performances of TLs and laser diodes (LDs) are compared. The charging time definitions of the TL and LD are given. The TL has a larger bandwidth and a shorter rise time than the LD due to the shorter charging time in the former. We find that the bandwidth decreases and the eye diagram of 40?Gb/s is degraded with increasing base region width of the TL. Finally, compared with the TL, the bandwidth reduction of LDs at high injection currents is due to a narrower small-signal response for the virtual states carrier density to the modulation current ratio.     

Intensity-modulating characteristics of a laser diode subjected to optical injection

We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current.     

Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers

We calculate optical gain coefficient and threshold current density in ZnS/MgBeZnS quantum wells (QWs) because ZnS/MgBeZnS QWs are useful for the fabrication of an ultraviolet laser on zinc-blende substrates. The threshold current density in a ZnS/MgBeZnS QW laser diode (LD) with a 10 nm ZnS active layer is calculated to be 1.63 kA/cm². By comparing the measured J _th in a CdZnSe/ZnSSe/ZnMgSSe QW LD with that calculated by us, it is expected that the threshold current density in ZnS/MgBeZnS QW LDs measured by experiment is larger than that calculated by our calculation method.     

Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

Electroluminescence(EL) and temperature-dependent photoluminescence measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes(LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6 kA/cm~2 are similar, while LD with threshold current density of 4 kA/cm~2 exhibits a smaller augerlike recombination rate compared with the one of 6 kA/cm~2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. The internal quantum efficiency value estimated from temperature-dependent photoluminescence is consistent with EL measurements.     

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Room-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm² has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T₀ convince very good thermal properties of the above laser.     

Improvement of performance characteristics of deep violet InGaN DQW lasers using a strip DQW active region

The effect of the laser ridge width on the performance characteristics of deep violet In_0.082Ga_0.918N/GaN double quantum well (DQW) laser diodes (LDs) has been numerically investigated. Simulation results indicated that threshold current of LDs is decreased and slope efficiency and differential quantum efficiency (DQE) are increased by decreasing ridge width, whereas output power is decreased. The results also showed that a decrease of more than 1 μm in the ridge width reduces the threshold current, whereas the slope efficiency, output power, and DQE are decreased. A new DQW LD structure with a strip active region has been proposed to obtain a lower current threshold and higher output power, slope efficiency, and DQE. The results showed the InGaN DQW LD with a strip DQW active region has the highest output power, slope efficiency, and DQE; it also has a lower threshold current compared with that of the original LD. The comparative study conducted for the LDs with output emission wavelengths of 390, 414 and 436 nm has also confirmed the enhancement in LD performance using the strip DQW active region structure.     

1310nm LD组件高低温循环寿命研究

研究了半导体激光二极管(LD)组件的使用寿命。模拟了在不同的环境条件下,对1310 nm LD组件进行了高低温循环寿命实验,建立了循环寿命的数学模型。结果表明:循环寿命与循环的温差、循环的速度成指数关系,通过测试LD组件在高温差、高循环速度条件下的循环寿命,外推器件正常工作条件下的循环寿命。得到了LD组件可靠性数据,为工艺设计人员提出量化数据。     

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In_(0.02)Ga_(0.98)N/GaN or u-In_(0.02)Ga_(0.98)N/Al_xGa_(1-x)N(0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor(OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In_(0.02)Ga_(0.98)N/GaN/Al_(0.05)Ga_(0.95)N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally,the output light power under an injecting current of 120 mA is improved to 176.4 mW.     

Totally asymmetric exclusion processes at constrained m-input n-output junction points

Totally asymmetric exclusion processes at constrained m-input n-output junction points under random update are studied by theoretical calculation and computer simulation in this paper. At the junction points, the hopping rate of particles from m-input parallel lattices to n-output parallel lattices is assumed to be equal to r/n （0 〈 r 〈 1 ）. The mean-field approach and Monte Carlo simulations show that the phase diagram can be classified into three regions at any value of r. More interestingly, there is a threshold rc = n（ 1 - √1 - m/n）/m. In the cases of r 〉 re and r 〈 rc, qualitatively different phases exist in the system. With the increase of the value of m/n, the regions of （LD, LD） and （MC, LD） or （HD, LD） decrease, and the （HD, HD） is the only phase that increases in the region （LD stands for low density, HD stands for high density, and MC for maximal current）. Stationary current and density profiles are calculated, showing that they are in good agreement with Monte Carlo simulations.     

Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light–current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5×10⁸ W/m². The hysteresis-type loop can be removed through the LD “run-in” procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere. PACS 42.55.Px; 42.70.Hj     

Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes

Ridge InGaN multi-quantum-well-structure （MQW） edge-emitting laser diodes （LDs） were grown on （0001） sapphire substrates by low-pressure metal-organic chemical vapour deposition （MOCVD）. The dielectric TiO2/SiO2 front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50% and that of the back high reflective coating is as high as 99.9%. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs.     

多芯CSP-LED芯片间距对热拥堵的影响

在铝基板上贴片了不同间距的四颗芯片级封装发光二级管(CSP-LED)模组,测试了不同贴片间距CSP-LED模组的EL光谱、流明效率、光通量、相关色温等光电参数。结果显示,在小电流(20~400 mA)下,随着注入电流的增大,不同排布间距的蓝、白光样品的光电性能基本呈现相同的变化规律,即光通量、光功率呈线性增长,光效基本保持稳定;在大电流(1~1.5 A)下,随着芯片间排布间距减小,EL光谱积分强度降低,色温升高,红色比下降,排布间距为0.2 mm的光通量衰减了84.58%,相比之下排布间距为3 mm和5 mm的光通量衰减明显减缓,分别为8.96%和3.58%,这些现象与禁带宽度、热应力、非辐射复合等因素有关。结果表明,CSP白光LED光通量衰减主要是荧光粉退化导致的,考虑到实际生产成本问题,排布间距为3 mm时,有利于热量散出,进而提高LED光电性能特性及其自身的使用寿命。     

1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

This study reports on the realization of 1.3-μm InGaAsP buried-heterostructure (BH) laser diodes (LDs) via an Fe-doped semi-insulating InP layer and an AlInAs electron stopper layer (ESL). Experimentally, the as-cleaved BH LD with an AlInAs ESL exhibited improved characteristics in terms of threshold current, slope efficiency, and maximum light output power at 90 °C as compared to those of the normal BH LD without an AlInAs ESL. In addition, high internal quantum efficiency or reduced threshold current density was observed, indicating increased modal gain in BH LDs fabricated with an AlInAs epilayer on top of the active region. It was also found that the temperature sensitivity of the BH LDs with an AlInAs ESL is more stable than that of the normal BH LDs. These results could be attributed to the suppression of thermal carrier leakage out of strain-compensated multiple-quantum-well by a large conduction-band offset of the AlInAs/InGaAsP heterojunction. Otherwise, without consideration of damping factor or coupling loss, the 3-dB bandwidth of the proposed BH LDs reaches a high value of 15.3 GHz. Finally, this TO-can packaged BH LD shows an eye-opening feature with the extinction ratio of 7.49 dB while operating at 10 Gbit/s at 50 mA.     

Experimental study of the characteristics of high-power laser diode radiation in the above-threshold mode for degradation analysis

The angular dependence of the intensity and contrast of the radiation of laser diodes (LDs) with a CW power of 1.25 W has been investigated in the above-threshold mode. An original method for detecting fundamental lasing is used to analyze the mode structure of the LD radiation at low pump currents. It is shown that this radiation contrast measurement makes it possible to detect the LD degradation in earlier stages than in power measurements.     

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.     

Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.     

增益开关半导体激光器在外光注入下脉冲抖动的实验研究

采用增益开关半导体激光器作为注入种子光源来降低另一个增益开关DFB或Fabry-Perot（FP ）半导体激光器的脉冲抖动.相位噪声测量技术表明：增益开关FP激光器在外部脉冲光注入 下，激光脉冲抖动（均方值）由1.2ps降低至830fs；增益开关DFB半导体激光器在外脉冲注 入下，脉冲抖动由12ps降低至1.8ps. 关键词： 半导体激光器 光脉冲产生 时间抖动 光子注入