Rapid magnetization reversal in magnetic small particles induced by non-static bias field

Magnetization reversal processes by a switching field in single-domain nano-sized magnetic particles in the presence of a small transverse non-static bias field are studied. Applying an oscillating bias field instead of a static field, the reversal time becomes much shorter when the switching field is slightly stronger than the effective anisotropy field. A pulsed bias field of a suitably chosen duration in the nanosecond scale is found to induce a rapid switching, even when the switching field is smaller than the anisotropy field. The dependence of the reversal time on the frequency of an oscillating bias field and the duration of a pulsed bias field are studied. The present work thus complement the earlier studies on switching in the presence of a static bias field.     

PN结电容与正向直流偏压的关系

半导体PN结具有电容的性质．在正向直流偏压下,理论计算表明,PN结扩散电容的对数与正向偏压成正比．实验发现,当正向偏压小于30mV时,这种线性关系是成立的;当正向偏压大于30mV时,会偏离这种线性关系．由于PN结还具有电阻特性,对交流信号的相位有影响．随着正向偏压增大,交流信号的相位变化出现一极值．如果将PN结等效为一个电容和一个电阻并联,就可以定性解释这种变化关系．     

LiNbO3马赫曾德尔调制器任意偏置工作点锁定技术的研究

在传统LiNbO3马赫曾德尔调制器偏置控制理论的基础上,提出了一种基于快速傅里叶变换(FFT)算法和低频小信号扰动的谐波响应反馈控制方法,实现了一种与调制器输入光功率及插入损耗无关、任意工作点可偏置并锁定的精密光电控制系统。利用比例积分微分（PID）控制方法,实现了任意工作点偏移小于0.5°的控制精度,实验结果亦证明该控制系统能够实现强度调制器任意工作点的偏置及锁定。这些结果对于将LiNbO3强度调制器稳定在最佳工作点并实现高速长距光纤通信系统是很有帮助的。     

电光相位调制器谐波响应对光纤陀螺的影响

从电光相位调制器的谐波响应出发,对干涉型光纤陀螺信号零偏、零漂的产生来源进行了探讨.用干涉理论和正弦波调制解调分析从原理上指出调制器的振幅与相位两种谐波可产生陀螺信号的零偏和零漂.根据调制器典型数据所做的模拟与人为加入温漂时所得的试验结果相当吻合.从而证实调制器谐波响应是产生陀螺信号偏移和漂移的主要原因,为减小光纤陀螺零偏和零漂提供了一条新思路.     

Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors

The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron--hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.     

偏置电压对磁致伸缩/压电层合换能结构磁电性能影响

分析和测试了偏置电压调整时PZT5/Terfenol-D/PZT8层合换能结构磁电性能. 提出了一种磁致伸缩/压电层合磁电换能结构的一阶谐振频率控制方法. 通过改变压电驱动层的直流电压对磁电层合结构的预应变进行改变, 从而调整谐振频率. 分析偏置电压、 应变、 弹性模量、 谐振频率和谐振磁电电压系数之间关系. 分析表明: 在较小应变情况下, 控制电压几乎可以线性调节谐振频率, 而层合结构谐振磁电电压系数几乎与偏置电压无关. 实验研究验证: 理论与实验结果较好吻合. 在-170 V-+170 V的偏置电压时, 谐振频率可以几乎线性调整. 最大频率调整量达到1 kHz, 偏置电压对一阶纵振频率的控制率达到: 2.94 Hz/V. 在偏置磁场为0-225 Oe时, 谐振频率调整量与偏置磁场无关. 偏置磁场会改变谐振磁电电压系数, 在大于178 Oe静态磁场偏置时, 磁电电压系数最大, 达到1.65 V/Oe.     

Detecting Spin Bias with Circularly Polarized Light

We theoretically study the spin transport through a two-terminal quantum dot device under the influence of a symmetric spin bias and circularly polarized light.It is found that the combination of the circularly polarized light and the applied spin bias can result in a net charge current.The resultant charge current is large enough to be measured when properly choosing the system parameters.The resultant charge current can be used to deduce the spin bias due to the fact that there exists a simple linear relation between them.When the external circuit is open,a charge bias instead of a charge current can be induced,which is also measurable by present technologies.These findings indicate a new approach to detect the spin bias by using circularly polarized light.     

Anomalous bias dependence of spin torque in magnetic tunnel junctions

We predict an anomalous bias dependence of the spin transfer torque parallel to the interface, Tparallel, in magnetic tunnel junctions, which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal without a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence.     

NiFe/FeMn双层膜交换偏置的形成及热稳定性研究

研究了在铁磁(NiFe)/反铁磁(FeMn)双层膜之间，交换偏置的形成过程和热稳定性，特别是NiFe/FeMn的交换偏置作用与FeMn层晶粒尺寸的关系.和以前作者不同的是，本文方法采用非磁性Ni-Fe-Cr合金作缓冲层材料，改变Cr的含量就可以获得不同晶粒尺寸的反铁磁FeMn层.实验表明，晶粒尺寸较小的FeMn产生较强的铁磁/反铁磁交换偏置场；但是，对于较大晶粒的FeMn层，出现交换偏置作用所要的临界厚度较小.这符合Mauri提出的理论模型.交换偏置场的热稳定性实验表明，具有较大晶粒尺寸的FeMn层给出较 关键词： 交换偏置 热稳定性 反铁磁 晶粒尺寸     

X光二极管脉冲偏压施加技术

为了满足充气腔实验对探测器安全性能的要求,开展了X光二极管的脉冲偏压施加技术的初步研究。在8ps激光装置上,设计了一种新的基于信号发生器的同步方法,完成了X光二极管脉冲偏压加载工作方式的技术验证。脉冲偏压与直流偏压条件下,探测器上升时间与半高宽变化值不超过10%。脉冲偏压源主要指标确定为脉宽110μs,激光打靶零后2.11ms完成偏压卸载。     

掺杂下铁磁/反铁磁双层膜中交换偏置的增强

采用了Monte-Carlo方法，讨论了反铁磁层中不同非磁性掺杂浓度下，铁磁/反铁磁双层膜中交换偏置的温度特性. 模拟结果显示：反铁磁层中非磁性掺杂能导致铁磁/反铁磁双层膜中交换偏置的增强. 同时，交换偏置随非磁性掺杂浓度的变化存在极大值，即同一温度下交换偏置随掺杂浓度的变化是非单调的. 并且，随着温度的升高交换偏置的最大值所对应的掺杂浓度向浓度低的方向移动. 它和Hong Jung-Il等人的实验结果完全一致. 究其原因在于反铁磁层相应的自旋排布、磁畴结构等随掺杂浓度的改变发生大的变化，当其正向磁畴和负向磁畴都形成连通的网络结构时，系统的交换偏置达最大. 比较了随机掺杂与规则掺杂的模拟结果. 模拟结果表明规则掺杂能够获得比随机掺杂更大的交换偏置，进一步表明了铁磁/反铁磁双层膜中交换偏置的特性与铁磁/反铁磁界面磁畴结构密切相关.     

Exchange bias dependence on interface spin alignment in a Ni80Fe20/(Ni,Fe)O thin film

A Ni80Fe20/(Ni,Fe)O thin film exhibits a positive exchange bias when cooled in a zero field and a negative exchange bias when field cooled. With transmission electron microscopy and electron energy loss spectrometry, the composition and magnetic structure has been ascertained and a distribution of magnetization easy axes about the interface extrapolated. The results indicate that the positive exchange bias is from antiferromagnetic interface moments perpendicular to their ferromagnetic counterparts. With field cooling the alignment is put into a parallel configuration resulting in a negative exchange bias.     

脉冲偏压电弧离子镀Cr-O薄膜结构及光学性能研究

采用脉冲偏压电弧离子镀技术在单晶硅基片及石英玻璃上制备了一系列均匀透明的Cr-O薄膜. 用场发射扫描电子显微镜、X射线衍射仪、X射线光电子谱、纳米压痕仪、紫外可见光分光光度计等方法对薄膜的表面形貌、膜厚、相结构、成分、元素的化学价态、硬度和光学性能等进行表征, 主要研究了偏压幅值对薄膜结构和性能的影响. 结果表明, 施加偏压可使薄膜的沉积质量明显提高, 其相结构由非晶态转变为晶体态, 并随着偏压幅值的增加, 由Cr₂O₃相向CrO相转变; 薄膜的硬度先增大后减小, 当偏压为-300 V时, 硬度达到最大值24.4 GPa; 薄膜具有良好的透光率, 最高可达72%; 当偏压为-200 V时, 薄膜的最大光学帯隙为1.88 eV.     

Exchange bias and blocking temperature in Co/FeMn/CuNi trilayers

Aspects of exchange bias between antiferromagnets and ferromagnets remain unclear despite recent research. An outstanding issue is the relationship between exchange bias and enhanced coercivity in the ferromagnetic layer. This Letter reports the unexpected finding that a substantial exchange bias can be generated between an antiferromagnet (FeMn) with a higher ordering temperature than that of the ferromagnet (CuNi). We interpret the result in terms of a temperature-dependent competition between interfacial exchange and antiferromagnet anisotropy energies. Crossover of these energies during cooling is responsible for the onset of exchange bias at the blocking temperature.     

激光陀螺抖动偏频优化研究

基于频率调制理论,分析、仿真计算了正弦抖动偏频和优化后的正弦抖动偏频条件下,激光陀螺输入-输出曲线的特点.结果表明：正弦抖动偏频时激光陀螺的输入-输出曲线在抖动频率的倍频点处存在着动态锁区,其宽度与激光陀螺静态锁区、抖动角振幅有关.采用优化后的正弦抖动偏频可以很好地克服动态锁区,大大提高激光陀螺输入-输出曲线的线性度.试验对比了正弦抖动偏频和优化后的正弦抖动偏频条件下激光陀螺的输出性能.试验结果表明：采用优化后的正弦抖动偏频显著提高了陀螺准确度.     

Modeling exchange bias microscopically

Exchange bias is a horizontal shift of the hysteresis loop observed for a ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange bias is related to the spin structure of the antiferromagnet, for its fundamental understanding a detailed knowledge of the physics of the antiferromagnetic layer is inevitable. A model is investigated where domains are formed in the volume of the AFM stabilized by dilution. These domains become frozen during the initial cooling procedure carrying a remanent net magnetization which causes and controls exchange bias. Varying the anisotropy of the antiferromagnet, we find a non-trivial dependence of the exchange bias on the anisotropy of the antiferromagnet.     

Correcting power and p-value calculations for bias in diffusion tensor imaging

Diffusion tensor imaging (DTI) provides quantitative parametric maps sensitive to tissue microarchitecture (e.g., fractional anisotropy, FA). These maps are estimated through computational processes and subject to random distortions including variance and bias. Traditional statistical procedures commonly used for study planning (including power analyses and p-value/alpha-rate thresholds) specifically model variability, but neglect potential impacts of bias. Herein, we quantitatively investigate the impacts of bias in DTI on hypothesis test properties (power and alpha-rate) using a two-sided hypothesis testing framework. We present theoretical evaluation of bias on hypothesis test properties, evaluate the bias estimation technique SIMEX for DTI hypothesis testing using simulated data, and evaluate the impacts of bias on spatially varying power and alpha rates in an empirical study of 21 subjects. Bias is shown to inflame alpha rates, distort the power curve, and cause significant power loss even in empirical settings where the expected difference in bias between groups is zero. These adverse effects can be attenuated by properly accounting for bias in the calculation of power and p-values.     

金刚石薄膜负偏压形核的边缘效应

 在微波等离子体化学气相沉积装置中，研究了金刚石薄膜在Si (100)面上的负偏压形核行为，结果表明，偏压大小对金刚石的形核均匀性有显著影响，而甲烷浓度主要影响形核时间，对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时，形核行为存在明显的边缘效应，即在偏压值低于-150 V时，硅片边缘金刚石核密度急剧降低，远低于硅片中央；在甲烷浓度比较低时，硅片边缘核密度要高于中间。研究表明，造成这种现象的主要原因是硅片下的钼支撑架发射电子所致，过量的原子H对金刚石的形核是不利的。     

Estimation of damping from response spectra

In this paper procedures for estimating damping ratio from response spectra are examined. The study is restricted to an evaluation of bias and random errors introduced by signal processing requirements. A second order system is used in the study, and a Gaussian white noise input is assumed. It is shown that, due to bias errors in estimating the response spectra, calculations of damping ratio by the peak response and half-power bandwidth methods give overestimates. The bias errors of the damping ratio estimates are a function of the true damping of the system and the ratio of analysis bandwidth to resonant frequency. The bias error for the half-power bandwidth method is three times that for the peak response method. It is also shown for large ranges of damping ratio and bandwidth ratio that zero bias response occurs at a point where the response is approximately 80% of the peak response. Numerical results obtained by simulation studies are used to verify the expressions for normalized bias error. Expressions for random error associated with damping ratio estimates are also developed. Random error can be minimized by maintaining a high coherence between the system input and response.     

Exchange bias studies of NiFe/FeMn/NiFe trilayer by ion beam etching

Effect of low energy ion beam etching on exchange bias in NiFe/FeMn/NiFe trilayer is investigated in multilayers prepared by rf magnetron sputtering. Stepwise etching and magnetization measurement of FeMn layer in an NiFe/FeMn bilayer show increase of bias as etching proceeds and FeMn thickness decreases. The bias show a maximum around 7 nm FeMn thickness and then fall sharply below 5 nm, broadly in line with the exchange bias variation at increasing FeMn thickness but in reverse order, particularly at low FeMn thickness. Progressive etching of top NiFe layer in the NiFe/FeMn/NiFe trilayer shows an initial gradual increase in bias followed by a sharp increase below 7 nm thickness of top NiFe layer, with a maximum at 2 nm thickness for both NiFe layers and greater bias for seed NiFe layer.