激光打靶过程中的电磁脉冲特性

为诊断激光打靶产生的电磁脉冲信号分布,选取环天线作为主要电磁脉冲信号采集装置,对靶室内外信号同时进行测试。从天线设计制作到天线标定,描述了脉冲诊断系统的搭建。通过对信号进行采集及处理,对比分析了靶室外、法兰口及靶室内脉冲信号的频域特性和强度。得出靶室内受到电磁脉冲辐射强度最大且频谱分布最广,其次是法兰口,靶室外电磁脉冲信号最弱。总结多次激光打靶电磁脉冲信号频域分布,可看出波峰主要出现在0.5,1.2,3GHz。电磁脉冲时域结果规律性展示出脉冲持续约100ns,因靶室内回波振荡,电磁脉冲信号于几ns处及几十ns处有较明显峰值蔟。     

含偶氮苯基团的三枝状凝胶因子的合成和凝胶性质研究

设计合成了一种中心为三乙基氨基,酰胺基作为氢键连接基团,柔性的烷基链连接偶氮苯基团的含多种分子间弱相互作用的三枝状有机凝胶因子1.由于偶氮苯基团处于分子的外缘,在THF溶液中,凝胶因子1表现出良好的光致变色行为.凝胶性能测试中,分子间存在氢键作用、π-π相互作用等使得该化合物在醇类、有机酸类和乙腈等极性溶剂中极易形成稳定的有机凝胶.在少数的非极性溶剂,如正己烷和环己烷中也可以形成稳定凝胶,并且随着溶剂极性的不同,凝胶形貌呈现出规则的纤维状或带状结构.     

实验室晶体积分衍射效率标定方法研究

基于X射线衍射仪运行的稳定性和角度的精密控制能力,以平面季戊四醇(PET)晶体为样品,对晶体的积分衍射效率标定方法进行了实验研究。实验的光源是Cu靶X射线管,通过适当选取镍滤片和精细控制管电压,极大地抑制了Kβ线谱和韧致辐射,实现了Kα线能量单色化。正比计数器前端的狭缝是0.05mm,采用0.001°的步进角度对源强和Kα线衍射峰分别进行扫描。数据处理后得出在Cu的Kα线能点(8047.823eV)处,该平面PET晶体的积分衍射效率是(1.759±0.002)×10-4 rad。实验结果表明该方法可以在实验室条件下快速、方便地完成平面晶体积分衍射效率的标定。     

基于X射线衍射仪的X光晶体本征参量的标定

X光晶体本征参量的实验标定是准确鉴定X光晶体种类和品质,研制各种类型晶体谱仪,X光线谱定量测量和高分辨X光单能成像的基础.基于X射线衍射仪,通过制作平面晶体样品架,采取控制X射线管电源、滤波片选取和厚度控制等措施,极大地抑制了Cu-KJ3及韧致辐射,使X射线管光源Cu-Kα单能化,提出了用滤片作为光源单能化的判据.对X光线谱测量中常用的X光分光晶体季戊四醇[PET(002)]的晶格常量2d和Cu-Ka能点的积分衍射效率R.进行了标定方法研究,其标定值分别为(0.87425±0.00042)nm和(1.759±0.024)×10-4 Rad.基于X射线衍射仪的X光晶体本征参量的精密实验标定方法既快速高效,且十分方便和灵活.通过更换衍射仪的X射线管靶材,采取类似方法,可以标定其它能点的晶体积分衍射效率,可为X光晶体的本征参量库提供更多的标定数据.     

Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample

The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. Hie results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer     

Ionic Liquid Based Electrolyte with Mesoporous Silica SBA-15 as Framework for Quasi-solid-state Dye-sensitized Solar Cells

Quasi-solid-state electrolytes were fabricated with mesoporous silica SBA-15 as a framework material. Ionic conductivity measurements revealed that SBA-15 can enhance the conductivity of the quasi-solid-state electrolyte. The diffusion coefficients of polyiodide ions such as Ⅰ3ˉ and Ⅰ5ˉ which were confirmed by Raman spectroscopic measurement, were about twice larger than that of I-. The optimized photoenergy conversion efficiency of dye-sensitized solar cells （DSSC） with the quasi-solid-state electrolyte was 4.3% under AM 1.5 irradiation at 75 mW·cm^-2 light intensity.     

平响应X射线光阴极的理论设计与计算模拟

给出了适用于0.1~5keV的平响应X射线光阴极的设计方案.采用两层不同厚度、相同面积的相同金属材料制备X射线光阴极,两金属层的厚度和微观结构经过优化后,在惯性约束聚变实验感兴趣的能区具有良好的平响应特征,不需要复杂的解谱过程.选取4种不同的光阴极材料,改变厚度和占空比设计,计算得到了光阴极不平整度.模拟结果表明,该光阴极在0.1~5keV能量响应基本一致,不平整度优于5%.     

利用螺旋型波带片进行边缘增强成像

为了提高对等离子体内界面区域的诊断精度,研究了利用螺旋型波带片实现边缘增强成像的技术。制作了用于可见光波段的一阶螺旋型波带片,最外环宽度3μm。利用螺旋型波带片对振幅式物体进行了边缘增强成像,实验获得了成像物体内边界区域的清晰图像,界面区域的成像强度得到很大增强。通过实验测量发现,当物距在菲涅耳衍射区域内时,螺旋型波带片也能够获取较好的成像质量,表明螺旋型波带片具有较大的视场角,能够对大尺度物体进行边缘成像。基于螺旋型波带片的边缘增强成像可以弥补传统成像方式对界面区域成像的不足,提高对等离子体内界面区域的诊断能力。     

Interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air

The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera     

非晶态分子合金低温制备纳米复合氧化物La~1~-~xCa~xMnO~3

钙钛矿型稀土锰氧化物La~1~-~xCa~xMnO~3(RE=La,Pr,Nd,Gd;T=Ca,Sr,Ba,Pb等)因其特殊的巨磁电阻效应,引起人们广泛的关注。用非晶态的分子合金为前驱体,制备了一系列具有纳米尺寸的La-Ca-Mn-O复合氧化物颗粒。研究表明,前驱体的晶化温度对纳米颗粒的形貌和大小均有影响。当晶化温度为450℃-600℃时,从透射电子显微镜观察到的颗粒大小约为25nm-100nm。该纳米材料的磁及磁电阻行为不同于其体相体系,其交流磁化率表现出较较强的尺寸依赖性,而磁电阻具有本征型和自旋隧穿型的巨磁电阻行为。