神光Ⅱ升级装置软X光能谱仪研制北大核心CSCD

软X光能谱仪（SXS）是惯性约束聚变黑腔辐射流、辐射温度测量的主要诊断设备。根据神光Ⅱ升级装置实验需求,完成软X光谱仪系统研制,并开展了性能研究。谱仪采用环形透镜成像准直方法保证瞄准精度,通过固定角度平面镜安装机构来减少角度偏差。利用滤片、平面镜以及X光二极管（XRD）探测器的标定实验结果,得到谱仪测量能区为0．05～4．97keV。在短脉冲激光装置上开展通道时间响应性能研究,确定系统时间分辨力为99．22ps。     

基于APD单光子探测器的光子到达时间标记精度研究EI北大核心CSCD

为了准确测量X射线脉冲星导航中的光子到达时间,提出了一种X射线探测器光子到达时间精度的测试系统,该系统主要由脉冲X射线发生器、任意波形发生器、雪崩光电二极管探测器和时间标记光子计数器组成。系统测量脉冲X射线发生器的控制脉冲信号与雪崩光电二极管探测器测量的输出信号之间的时间延迟,研究时间延迟的分布情况,该分布的标准差可以反映被测探测器的光子到达时间测量精度。实验结果显示,雪崩光电二极管探测器输出信号相比控制信号的时间延迟约9.03 ns,标准差为2.23 ns,即雪崩光电二极管探测器的光子到达时间精度为2.23 ns,表明其能够实现对X射线单光子的快时间响应与高精度标记。     

高性能X光二极管的研制

 作为X光测量的重要器件,X光二极管的研究和改进工作一直颇受重视。通过对储能系统和输出系统的重点研究与优化设计,研制出了新型超快响应X光二极管（XRD-Ⅱ）,并在8 ps短脉冲激光装置上对探测器的性能进行了研究。实验结果表明:XRD-Ⅱ的阻抗匹配特性得到提高,耐压能力达6 kV,上升时间达40 ps,半高全宽达80 ps。标定实验给出的灵敏度结果也说明其灵敏度得到了保证。超快响应X光二极管的成功研制可大大提高X光诊断的时间分辨力,为实现精密定量诊断提供有利条件。     

滤片-XRD探测系统响应时间测量

 研究了软X射线能谱仪探测道系统(系统包括X射线二极管（XRD）、SUJ-50-10电缆和不同频带示波器)的响应时间。实验利用上海激光联合实验室的20TW激光器激光(激光能量约20J，脉冲宽度约1ps)打金箔靶产生的X光，用XRD探测系统测量，记录示波器有TK684C，TK694C和WM8500等。将实验数据进行了线性拟合和比对分析。滤片XRD探测系统的响应时间随偏压升高而加快，随传输电缆长度的增加而变慢，因此测量快信号过程时，应提高探测器偏压，缩短传输电缆，选择宽频带高采样率示波器，以便减少系统的响应时间，减小信号失真程度。     

基于光导开关的重复频率闪光X光机北大核心CSCD

采用砷化镓光导开关和Blumlein型脉冲形成网络以级联的拓扑形式构建平顶输出功率源,驱动工业X光二极管产生X射线。提出了一种轮辐状金属-陶瓷沿面阴极,并与普通金属阴极工业X光二极管重复频率实验结果进行比较。研究表明:受限于阴极重复频率下的电流发射能力,普通金属阴极工业X光二极管难以实现1kHz重复频率,采用新型阴极二极管实现了1kHz重复频率2猝发脉冲X光输出,这两个脉冲的二极管功率、X射线信号基本一致。     

Silex-I飞秒激光装置X射线探测系统时间特性北大核心CSCD

在Silex-Ⅰ飞秒激光装置上,利用32fs、800nm的激光辐照平面金靶,产生小于1ps的X射线脉冲,作为δ脉冲X射线源,研究XRD探测器的时间响应特性,并且探索X射线条纹相机时间分辨和分幅相机曝光时间的X射线标定方法。实验给出了XRD探测器的时间响应特性。解决了条纹相机和分幅相机触发晃动问题,给出了条纹相机时间分辨和分幅相机曝光时间的X射线标定方法,初步给出条纹相机时间分辨和分幅相机曝光时间。     

新型CVD金刚石X射线探测器时间性能初步研究

在微带结构化学气相沉积(CVD)探测器的基础上,利用同轴结构输出部件结合隔离直流电路制作了单端连接同轴探测器,该探测器主要用于激光等离子体的X射线测量。探测器采用直径为4mm的圆柱体CVD金刚石,金刚石一个端面镀有网格状电极,另一端镀有圆盘状电极。网格状电极既可保证正常施加偏压,也可使X射线直接照射至金刚石表面。在短脉冲激光装置上开展了探测器的时间响应特性实验,结果显示探测器上升时间为61ps。CVD金刚石探测器的时间性能研究为探测器的优化改进奠定了基础。     

X射线真空光二极管

激光等离子体辐射的X射线时间空间积分测量已有报道。为了更好地了解光和等离子体的相互作用,进行时间空间的分辨测量是必要的。靶球的空间分辨测量已用X射线针孔相机进行了大量的实验工作。由于一般的闪烁体/光电倍增管或半导体二极管X射线探测器的时间分辨只有几个毫微秒,对于辐射时间在0.1—1ns的X射线,其响应时间显得太慢。X射线真空光二极管的时间分辨为几百微微秒,它可用于X射线激光器、激光产生X射线实验和激光聚变实验诊断。     

化学气相沉积金刚石X射线探测器相对标定

利用神光Ⅱ激光装置,开展了化学气相沉积金刚石X射线探测器的相对标定技术研究。实验得到了金刚石X射线探测器与已绝对标定的平响应X射线二极管对X射线辐射的测量结果,计算得到金刚石X射线探测器平均灵敏度为1.19610-5 C/J,不同发次得到的灵敏度与平均值之间的偏差不大于13%。     

化学气相沉积金刚石探测器测量软X射线能谱

金刚石具备高热导率、高电阻率、高击穿电场、大的禁带宽度、介电系数小、载流子迁移率高以及抗辐射能力强等特性,可作为已应用于惯性约束聚变(ICF)实验X射线测量的硅与X射线二极管的较好替代品.随着化学气相沉积(CVD)技术的发展,CVD金刚石受到人们越来越多的关注.文中利用拉曼谱仪和X射线衍射仪对1mm×1mm×2mm,1mm×1mm×3mm两种规格CVD金刚石完成品质检测后,完成了CVD金刚石X射线探测器的集成制作,并在8ps激光器和神光III原型装置上开展了探测器时间特性等性能研究.实验结果表明,整个探测器系统前沿响应时间可达60ps,半高全宽可达120ps,与X射线二极管探测系统时间特性一致.在神光Ⅲ原型装置实验中,没有观察到探测器对3ω0激光的响应,说明探测器具有好的抗干扰能力.其测得的温度曲线与软X射线能谱仪测量结果一致,实现了X射线能谱测量的初步应用.     

基于大功率激光二极管的光导开关导通特性

研究了应用于介质壁加速器的小间隙光导开关在大功率激光二极管驱动下的导通特性。激光二极管产生的激光脉冲中心波长为905nm,脉冲宽度(FWHM)约20ns,前沿约3.1ns,抖动小于200ps,峰值功率约90W。所用光导开关为异面电极结构的砷化镓(GaAs)光导开关,电极间隙5mm,偏置电压为15~22kV脉冲高压,工作在非线性(高增益)模式。测得光导开关最小导通电阻4.1Ω,抖动小于1ns,偏置电压在18kV时平均使用寿命约200次。     

透射式阴极X光二极管初步研究北大核心CSCD

基于透射式阴极发射模型和平响应XRD原理,设计了透射式阴极,并制作550nm CH+50nm Au的阴极,并在神光Ⅲ原型装置上开展了初步验证实验。首先利用反射式XRD施加负偏压的实验开展直穿光影响评估,施加偏压为-1500V时,没有观测到探测信号,表明直穿光产生光电子得到了有效抑制。利用原型主激光与第九路激光打靶实验,施加负偏压的透射式XRD获得探测信号显示第二个峰值信号延后第一个信号3.01ns,该结果与第九路激光延迟时间一致,时间分辨能力满足实验要求。     

惯性约束聚变软X射线在线标定系统概念设计

长期以来，惯性约束聚变（ICF）研究软X射线诊断科学仪器设备的元器件标定工作主要依赖同步辐射光源X射线辐射计量站进行。该类装置通常与用于开展ICF研究的大型激光装置分处两地，难以满足ICF研究软X射线元器件实时实地的标定应用需求。另外，由于同步辐射和ICF激光等离子体产生的X射线辐射特性存在较大差异，同步辐射计量站的标定结果事实上也不能完全反映元器件在ICF实验应用中的计量响应特性。本文首先介绍一种基于单光学元件的软X射线紧凑型无谐波光源单色化技术，以此为基础提出研制基于ICF激光等离子体X射线源的同源、同几何位形、双束比较校准的多能量通道光源单色化系统，用于ICF应用软X射线元器件的在线标定。新系统一方面可望满足ICF软X射线元器件实时实地的标定应用需求；另一方面，其提供的标定光束的技术特征将最大可能地接近ICF激光等离子体X射线辐射本身。配备相应的X射线二极管（XRD）和标准探测器之后，该系统将形成一套具有在线自校准功能的新型多通道δ能量响应软X射线能谱仪。     

基于LabVIEW的高功率微波驱动源监控系统

针对高功率微波源对前级驱动电源的计算机自动控制要求,设计了一套1 200 kV高功率微波驱动电源监控系统。系统采用多功能数据采集卡控制大功率调压器产生连续可调的工频电压,再经过环氧高压变压器和整流硅堆等转换为直流高压,对储能电容进行充电控制;采用高速数据输入输出卡控制触发系统按时序进行工作;监测计算机通过RS-485串口方式对直流高压、闸流管阳极电压、闸流管对地电流等进行实时状态监测;控制主机通过以太网与中央控制计算机实现通讯,可以单独控制电源工作,也可以通过中央计算机统一协调工作;采用LabVIEW作为软件开发平台,利用图形控件完成整个电源系统的控制监测等功能的设计;为了解决因电磁干扰强而引起的地电位抬高、高压采集不正常等问题,系统的软硬件都融入了可靠性设计。实验结果表明,该系统工作可靠稳定,实时性强,界面友好,操作简单,具有良好的可扩展性和移植性。     

Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes

Vertically aligned ZnO nanowires were successfully grown on the sapphire substrate by nanoparticle-assisted pulsed laser deposition (NAPLD), which were employed in fabricating the ZnO nanowire-based heterojunction structures. p-GaN/n-ZnO heterojunction light-emitting diodes (LEDs) with embedded ZnO nanowires were obtained by fabricating p-GaN:Mg film/ZnO nanowire/n-ZnO film structures. The current–voltage measurements showed a typical diode characteristic with a threshold voltage of about 2.5 V. Electroluminescence (EL) emission having the wavelength of about 380 nm was observed under forward bias in the heterojunction diodes and was intensified by increasing the applied voltage up to 30 V.     

Two－Side Electron Beam Pumping System For Hundred－Joule－Level KrF Excimer Laser

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Planar hybrid carbon-decorated zinc oxide nanowires for infrared photodetection

Vapor phase transport (VPT) assisted by thermal evaporation of methanol was utilized to favor the fabrication of hybrid carbon-decorated zinc oxide nanowires (C/ZnO NWs). The photoluminescence (PL) spectrum revealed evidence of optical properties for several defects such as zinc interstitials (Zn_i) and oxygen vacancy (V_o) in hybrid C/ZnO NWs. The PL also exhibited that the planar hybrid C/ZnO NWs photodetector has a wide range of sensitivity from ultraviolet (UV) to infrared (IR). The imaging results show formation of ZnO nanostructures which can be further confirmed from X-ray diffraction (XRD) results. XRD exhibits carbon (C)-related peaks at 12.88, 26, 43, 45, and 55° together with standard ZnO peaks. The incorporation of C shows excellent photoconduction towards varied laser powers (0.0, 7.82, 37.95, 69.20, 100.0, 130.0, and 160.0 mW) of IR illumination. The possibility of current drain in the device was evaluated based on the direct-current (DC) bias voltage of 0.00, 3.33, and 5.55 V. DC bias 3.33 and 5.55 V attributed increase of photocurrent towards the forward bias voltage. However, the reverse bias voltage illustrated a vast increase of photocurrent compared to the forward bias voltage. External quantum efficiency (EQE) at DC bias 5.55 V was 6.5–9.5 range folds greater than the EQE measured for zero bias voltage. Significant photoresponsivity was identical for various laser pulse ranging from 10 to 5000 Hz. Simultaneously, the rise (τ_r) and fall (τ_f) time were measured at 49 and 60.5 μs attributes that the fabrication technique can be improvised and implemented to enhance the efficiency of optoelectronic devices for future applications.     

Injection laser sources for fiber optic communications

This paper describes some of the laser designs and GaAs and GaAlAs epitaxial and wafer-processing technology currently used in the fabrication of laser diodes intended for incorporation into fiber optic communication or data link systems. Two classes of laser diodes are described: cw laser diodes emitting up to 75 mW and devices emitting in excess of 200 mW peak pulsed power at 27°C at duty cycles up to 10%. The fabrication and assembly of these devices is presented in detail, and the problems encountered in the transfer of these processes from a research environment to a manufacturing operation are discussed. Data are presented showing laser-emitted power, both pulsed and continuous, the angular distribution of emitted power, emission wavelength and bandwidth, optical coupling efficiency to various fibers, and laser lifetimes. In addition, the interaction between laser threshold current density, thermal impedance, emitted beam distribution, and fiber optic coupling is described. Several fiber optic laser coupling schemes are described. Finally, the results of testing pulsed laser diodes to see if they meet military environmental and performance test requirements are described with specific data presented showing the value of burn-in testing to eliminate lasers that exhibit abnormally short lifetimes from test lots.     

X光二极管实验平台初步设计

采用Marx发生器结合水介质同轴线设计了高压脉冲功率源,在X射线二极管负载上可产生数MV高压输出。通过电压波过程分析,给出了在负载上获得最大电压输出条件下的形成线、传输线的阻抗设计原则。通过集中参数电路模型分析,给出了一定预脉冲幅值下形成线、传输线电长度及中储设计原则。结合水介质正极性耐压Martin经验公式进行绝缘设计,二极管采用径向均压绝缘堆结构,给出了整个装置初步方案设计。基于Pspice的全系统电路模拟表明:当中储运行电压为2.6MV时,对3Ω形成线充电电压为3.3MV,并最终在40Ω负载上获得4MV电压输出,且充电过程中负载脉冲幅值约为形成线充电电压的1.2%,在现有条件下,该平台设计指标能够满足实验预期。     

Injection laser sources for fiber optic communications

Abstract

This paper describes some of the laser designs and GaAs and GaAlAs epitaxial and wafer-processing technology currently used in the fabrication of laser diodes intended for incorporation into fiber optic communication or data link systems. Two classes of laser diodes are described: cw laser diodes emitting up to 75 mW and devices emitting in excess of 200 mW peak pulsed power at 27°C at duty cycles up to 10%. The fabrication and assembly of these devices is presented in detail, and the problems encountered in the transfer of these processes from a research environment to a manufacturing operation are discussed. Data are presented showing laser-emitted power, both pulsed and continuous, the angular distribution of emitted power, emission wavelength and bandwidth, optical coupling efficiency to various fibers, and laser lifetimes. In addition, the interaction between laser threshold current density, thermal impedance, emitted beam distribution, and fiber optic coupling is described. Several fiber optic laser coupling schemes are described. Finally, the results of testing pulsed laser diodes to see if they meet military environmental and performance test requirements are described with specific data presented showing the value of burn-in testing to eliminate lasers that exhibit abnormally short lifetimes from test lots.