钴原子及其团簇在Rh(111)和Pd(111)表面的扫描隧道显微学研究

利用扫描隧道显微镜和扫描隧道谱(STM/STS)及单原子操纵,系统研究了单个钴原子(Co) 及其团簇在Rh (111)和Pd (111)两种表面的吸附和自旋电子输运性质. 发现单个Co原子在Rh (111)上有两种不同的稳定吸附位,分别对应于hcp和fcc空位, 他们的高度明显不同,在针尖的操纵下单个Co原子可以在两种吸附位之间相互转化. 在这两种吸附位的单个Co原子的STS谱的费米面附近都存在很显著的峰形结构, 经分析认为Rh (111)表面单个Co原子处于混价区,因此这一峰结构是d轨道共振 和近藤共振共同作用的结果.对于Rh (111)表面上的Co原子二聚体和三聚体, 其费米面附近没有观测到显著的峰,这可能是由于原子间磁交换相互作用 和原子间轨道杂化引起的体系态密度改变所共同导致.与Rh (111)表面不同, 在Pd (111)表面吸附的单个Co原子则表现出均一的高度.并且对于Pd (111)表面所有 单个Co原子及其二聚体和三聚体,在其STS谱的费米面附近均未探测到显著的电子结构, 表明Co原子吸附于Pd (111)表面具有与Rh (111)表面上不同的原子-衬底相互作用与自旋电子输运性质.     

Bi2Te3(111)和Al2O3(0001)衬底对Bi(111)双原子层的电子结构及拓扑性质的影响

晶体铋沿(111)面方向的双原子层及薄膜具有新奇的拓扑性质.在实验生长或者实际应用中,其必然与衬底接触.本文采用紧束缚近似方法与第一性原理计算研究了Bi双原子层及其与Bi₂Te₃和Al₂O₃衬底形成的异质结的电子结构.计算结果表明, Bi双层是具有0.2 eV的半导体.当其与具有拓扑表面态的Bi₂Te₃形成异质结时,两者电子态之间有很强的杂化,不利于Bi(111)双层拓扑电子态的观测.将其放在绝缘体Al₂O₃(0001)时,导带与价带与衬底电子态杂化较小,并且展现出巨大的Rashba自旋劈裂.这是由于衬底诱导Bi(111)双原子层中心反演对称性破缺和自旋-轨道耦合共同作用的结果.进一步采用紧束缚近似计算得到的结果发现,衬底Al₂O₃(0001)对Bi(111)双层的作用等效于一个约为0.5—0.6 V/?(1?=0.1 nm)的外电场.此外, Bi(111)双原子层与衬...     

H2S在Cr(111)面上吸附与解离的第一性原理研究

采用了第一性原理研究了H₂S在Cr(111)面的吸附解离过程，利用吸附能、吸附构型和偏态密度图(PDOS)研究了H₂S及其解离产物在Cr(111)面上的吸附情况，都偏向倾斜吸附在Cr(111)面.同时研究了HS/H和S/H共吸附情况，得到共吸附物质在Cr(111)面上有明显的相互作用.最后使用线性同步和二次同步变换方法确定了解离反应的过渡态，了解到第一、二步解离的活化能分别为1.65 eV、0.82 eV,H₂S分子在Cr(111)面上的解离过程是放热反应，反应能为-2.90 eV.     

Ni(111)表面一氧化碳和氢共吸附的密度泛函理论研究

本文用密度泛函理论(DFT)的总能计算研究了一氧化碳和氢原子在Ni(111)表面上p(2×2)共吸附系统的原子结构和电子态，结果表明CO和H原子分别被吸附于两个对角p(1×1)元胞的hcp和fcc位置.以氢分子和CO分子作为能量参考点，总吸附能为2.81 eV，相应的共吸附表面功函数φ为6.28 eV.计算得到的C—O，C—Ni和H—Ni的键长分别是1.19?, 1.96?和 1.71?，并且CO分子以C原子处于hcp的谷位与金属衬底原子结合.衬底Ni(111)的最外两层的晶面间距在吸附后的相对变化分别是 关键词： Fisher-Tropsch反应 催化作用 Ni(111) p(2×2)/(CO+H) 共吸附     

在Si(111)-(7×7)表面自组织生长二维Ge团簇超晶格

利用超高真空扫描隧道显微镜研究了室温条件下亚单层Ge在Si(111)-(7×7)表面上的自组织生长.通过控制Ge的沉积量,在Si(111)-(7×7)表面上自组织生长成一种具有六重对称性的二维Ge团簇超晶格.构成超晶格的Ge团簇均位于(7×7)亚单胞的位置上,而且它们的形状和大小基本保持一致.文中对这种自组织结构的形成机理进行了讨论.     

H原子在Al(111)和Ag(111)面上的吸附

本文用电荷自洽的EHT方法,研究了H原子在Al(111)和Ag(111)面上的吸附,结果指出:在Al(111)面上,H以原子状态吸附在某些对称位置上,它也能渗透到表面层中去,成为填隙原子;H₂分子在表面处发生解离吸附。在Ag(111)表面上,H原子有可能以分子状态吸附,H—H键平行于表面,这与高分辨率电子能量损失谱所得到的实验结果一致;但H₂分子在Ag(111)表面也可能发生解离吸附。 关键词：     

被羰基镍污染的CO气体在Cu(111)表面的近常压吸附研究

本文利用近常压X射线光电子能谱和近常压扫描隧道显微镜研究了在超高真空(UHV)和近常压条件下,被羰基镍污染的CO气体在Cu(111)表面的吸附过程. 通过控制被污染CO的气体压力,可以在Cu(111)表面上形成Ni-Cu双金属催化剂. 此外,本文探索了CO在所形成的Ni-Cu双金属表面上的吸附和解离过程,并报道了几种CO的高压吸附相结构.     

S在Cu(111)表面吸附的第一性原理研究

基于广义梯度近似的投影缀加平面波(Projector augmented wave)赝势和具有三维周期性边界条件的超晶胞模型,采用第一原理方法计算并分析了由S吸附所形成的S/Cu(111)界面体系的吸附结构、吸附能和局域电子结构,考虑了不同覆盖度(1,0.25 ML)下S在不同吸附位置的吸附特性.结果表明:S原子倾向于...     

超高真空原子尺度Aux/Si(111)-(7×7)表面吸附的电荷分布测量

原子尺度表面吸附Au原子的物理化学性质对研究纳米器件的制备以及表面催化等起着非常重要的作用.利用调频开尔文探针力显微镜研究了室温下Au在Si(111)-(7×7)表面吸附的电荷分布的特性.首先,利用自制超高真空开尔文探针力显微镜成功得到了原子尺度Au在Si(111)-(7×7)不同吸附位的表面形貌与局域接触电势差(LCPD);其次,通过原子间力谱与电势差分析了Au/Si(111)-(7×7)特定原子位置的原子特性,实现了原子识别;并通过结合差分电荷密度计算解释了Au/Si(111)-(7×7)表面间电荷转移与Au的吸附特性.结果显示,Au原子吸附有单原子和团簇形式.其中,Au团簇以6个原子为一组呈六边形结构吸附于Si(111)-(7×7)的层错半单胞内的3个中心原子位;单个Au原子吸附于非层错半单胞的中心顶戴原子位;同时通过电势差测量得知单个Au原子和Au团簇失去电子呈正电特性.表面差分电荷密度结果显示金在吸附过程中发生电荷转移,失去部分电荷,使得吸附原子位置上的功函数局部减少.在短程力、局域接触势能差和差分电荷密度发生变化的距离范围内,获得了理论和实验之间的合理一致性.     

S在Cu(111)表面吸附的第一性原理研究*

基于广义梯度近似的投影缀加平面波(Projector augmented wave) 赝势和具有三维周期性边界条件的超晶胞模型,采用第一原理方法计算并分析了由于S吸附所形成的S/Cu(111)界面体系的吸附结构、吸附能和局域电子结构,考虑了不同覆盖度（1,0.25ML）下S在不同吸附位置的吸附特性. 结果表明：S原子倾向于吸附在高对称的fcc位与hcp位;由于S的负电性而使S/Cu吸附能随覆盖度的减小而增加, 与之相应,S-Cu键长随覆盖度的减小而缩短. DOS图、Bader电荷分析表明杂化主要发生在S的3p态和表面Cu原子的3d态之间,表层近邻的Cu原子向S转移的电子数随覆盖度增加而减小,这表明S与Cu(111)面有强的相互作用.     

Adsorption of oxygen on Au(111) by exposure to ozone

Atomic oxygen coverages of up to 1.2 ML may be cleanly adsorbed on the Au(111) surface by exposure to O₃ at 300 K. We have studied the adsorbed oxygen layer by AES, XPS, HREELS, LEED, work function measurements and TPD. A plot of the O(519 eV)/Au(239 eV) AES ratio versus coverage is nearly linear, but a small change in slope occurs at Θ_O=0.9 ML. LEED observations show no ordered superlattice for the oxygen overlayer for any coverage studied. One-dimensional ordering of the adlayer occurs at low coverages, and disordering of the substrate occurs at higher coverages. Adsorption of 1.0 ML of oxygen on Au(111) increases the work function by +0.80 eV, indicating electron transfer from the Au substrate into an oxygen adlayer. The O(1s) peak in XPS has a binding energy of 530.1 eV, showing only a small (0.3 eV) shift to a higher binding energy with increasing oxygen coverage. No shift was detected for the Au 4f_7/2 peak due to adsorption. All oxygen is removed by thermal desorption of O₂ to leave a clean Au(111) surface after heating to 600 K. TPD spectra initially show an O₂ desorption peak at 520 K at low Θ_O, and the peak shifts to higher temperatures for increasing oxygen coverages up to Θ_O=0.22 ML. Above this coverage, the peak shifts very slightly to higher temperatures, resulting in a peak at 550 K at Θ_O=1.2 ML. Analysis of the TPD data indicates that the desorption of O₂ from Au(111) can be described by first-order kinetics with an activation energy for O₂ desorption of 30 kcal mol⁻¹ near saturation coverage. We estimate a value for the Au–O bond dissociation energy D(Au–O) to be 56 kcal mol⁻¹.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

Admetal-induced substrate surface restructuring during metal-on-metal electrochemical deposition studied by in situ scanning tunneling microscopy

Based on time-dependent in situ scanning tunneling microscopy (STM) studies, we demonstrate that for Ni on Ag(111) and Ru on Au(111), electrochemical metal-on-metal deposition can result in pronounced substrate surface restructuring. For Ni/Ag(111), we observe that at low deposition flux and low coverage, Ni submonolayer islands at steps are partly embedded in the Ag terraces, whereas at higher deposition flux and higher coverage, substrate restructuring results in the formation of monolayer bays in the Ag terraces. We suggest that this restructuring process proceeds predominantly via step edge diffusion of Ag atoms. For Ru/Au(111), the formation of fjords and monolayer holes in the Au terraces is observed at low and high Ru coverage, respectively. The importance of the Au surface mobility for the restructuring process is demonstrated by comparing experiments in H₂SO₄ and HCl solutions, in which Au exhibits strongly different surface mobilities. For this system, restructuring involves Au diffusion along Au steps, Au atom detachment from the Au steps, and upward exchange diffusion. According to these observations and their comparison with similar findings for vacuum deposition, we conclude that this restructuring requires (i) a high substrate surface mobility and (ii) a stronger bonding of substrate atoms to deposit islands than to the substrate.     

Selective formation of ultrathin PbSe on Ag(111)

Two-dimensional (2D) semiconductors, such as lead selenide (PbSe), locate at the key position of next-generation devices. However, the ultrathin PbSe is still rarely reported experimentally, particularly on metal substrates. Here, we report the ultrathin PbSe synthesized via sequential molecular beam epitaxy on Ag(111). The scanning tunneling microscopy is used to resolve the atomic structure and confirms the selective formation of ultrathin PbSe through the reaction between Ag₅Se₂ and Pb, as further evidenced by the theoretical calculation. It is also found that the increased accumulation of Pb leads to the improved quality of PbSe with larger and more uniform films. The detailed analysis demonstrates the bilayer structure of synthesized PbSe, which could be deemed to achieve the 2D limit. The differential conductance spectrum reveals a metallic feature of the PbSe film, indicating a certain interaction between PbSe and Ag(111). Moreover, the moiré pattern originated from the lattice mismatch between PbSe and Ag(111) is observed, and this moiré system provides the opportunity for studying physics under periodical modulation and for device applications. Our work illustrates a pathway to selectively synthesize ultrathin PbSe on metal surfaces and suggests a 2D experimental platform to explore PbSe-based opto-electronic and thermoelectric phenomena.     

铝和银在铱（111）宽范围吸附的稳定性、原子构型及电子特性研究

利用第一性原理密度泛函理论研究了铝和银在铱的111面的宽范围吸附特性。基于密度泛函理论计算了覆盖度在0.11ML到2.00ML的结构稳定性、原子构型及平均结合能。对于铝原子在铱111面的吸附,最稳定的结构是铝原子覆盖度为0.5ML位于密堆六方空位（hcp-hollow）,相应的结合能为-4.68eV;对于亚层铝原子的吸附,最稳定结构是铝原子覆盖度为1.00ML时位于octahedral位置,相应的结合能为-5.28eV。对于覆盖度为2.00ML的满覆盖度混合结构的表层及亚层吸附,最稳定结构是Al位于六方密堆及八方密堆位置,相应的结合能为-4.70eV。这意味着当铝原子以满覆盖度吸附在铱的111面上时,趋向于在铱的111面的亚层形成化学键,而非吸附于表层。相比于铝吸附在铱111面,银的吸附特性呈现出很大的不同,面心位置更为稳定,在覆盖度为0.25ML时其结合能为3.89eV,略微高出密堆六方位置处3.88eV的结合能。     

铝和银在铱（111）宽范围吸附的稳定性、原子构型及电子特性研究

利用第一性原理密度泛函理论研究了铝和银在铱的111面的宽范围吸附特性。基于密度泛函理论计算了覆盖度在0.11ML到2.00ML的结构稳定性、原子构型及平均结合能。对于铝原子在铱111面的吸附,最稳定的结构是铝原子覆盖度为0.5ML位于密堆六方空位（hcp-hollow）,相应的结合能为-4.68eV;对于亚层铝原子的吸附,最稳定结构是铝原子覆盖度为1.00ML时位于octahedral位置,相应的结合能为-5.28eV。对于覆盖度为2.00ML的满覆盖度混合结构的表层及亚层吸附,最稳定结构是Al位于六方密堆及八方密堆位置,相应的结合能为-4.70eV。这意味着当铝原子以满覆盖度吸附在铱的111面上时,趋向于在铱的111面的亚层形成化学键,而非吸附于表层。相比于铝吸附在铱111面,银的吸附特性呈现出很大的不同,面心位置更为稳定,在覆盖度为0.25ML时其结合能为3.89eV,略微高出密堆六方位置处3.88eV的结合能。     

Initial stages of Bi/Ge(111) interface formation: A detailed STM study

We present a detailed scanning tunneling microscopy investigation of ultra-thin Bi films on Ge(111)-c(2 × 8) in the range up to 1.5 ML. During growth at 300 K, the second/third atomic layer of Bi already starts to nucleate before the completion of the first/second layer correspondingly. Laterally isolated first layer Bi atoms, clusters and islands posses no electronic states in the range ~ 0.5 eV above the Fermi level of the substrate. In contrast, metallic electronic properties are found for continuous films when Bi coverage nears 1 ML. Annealing the as-deposited Bi films at 450 K causes lateral redistribution of Bi due to surface diffusion: coarsening of two-dimensional Bi islands with no long range order in the adsorbate layer is observed up to 1 ML; long range ordered (√3 × √3)-Bi/Ge(111) interface plus three-dimensional Bi clusters are obtained for coverages in excess of 1 ML.     

The growth mode of aluminium on silver (111)

The geometric and electronic structures occuring during the growth of Al on a single crystal Ag(111) surface have been studied using a combination of low energy electron diffraction (LEED), Auger electron spectroscopy (AES), energy loss spectroscopy (ELS) and work function measurements. The Auger signal versus deposition time plots, which were used to monitor the growth mode, are shown to behave in an identical fashion to that expected for layer-by-layer (Frank-van der Merwe) growth. LEED was used to determine the lateral periodicity of thin Al films and shows that Al forms, at very small coverages, 2D islands which have the same structure as the Ag(111) substrate and which grow together to form the first monolayer. At substrate temperatures of 150 K a well defined (1 × 1) structure with the same orientation as the underlying Ag(111) can be seen up to at least 12 ML. After completion of the third monolayer the ELS spectrum approached that observed for bulk aluminium. At a coverage of 3 ML the work function decreases by 0.4 eV from the clean silver value.