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1.
采用基于密度泛函理论的广义梯度近似方法研究了稳态六方petrov原子序列结构Ge2Sb2Te5的结构、电子和光学性质。计算所得的平衡态晶格参数与实验数据和先前的理论结果吻合很好。基态的能带结构和态密度表明了稳态六方petrov原子序列结构的Ge2Sb2Te5持有金属性。从压强影响下体积的变化趋势发现稳态六方Ge2Sb2Te5在17 GPa和34 GPa 出现不稳定,暗示在此压强下的相变发生,这与2009年Krbal等人的实验结果相吻合。同时,还系统地研究了稳态六方petrov原子序列结构的Ge2Sb2Te5高压下的光学性质,得到了高压下介电函数、吸收率、光反射率、折射率、消光系数和电子能量损失谱在20 eV内的变化情况。  相似文献   

2.
吴成国  武文远  龚艳春  戴斌飞  何苏红  黄雁华 《物理学报》2015,64(11):114213-114213
采用基于密度泛函理论的第一性原理计算研究了Zn2GeO4晶体在高压下的电子结构和带隙变化行为. 研究结果发现, 随着压强的增加, Zn2GeO4 能带间隙先变大, 在压强为9.7 GPa时达到最大值, 然后减小. 通过电子态密度、电荷布居数和电子差分密度分布图的研究分析可知:在低压区域(0< P< 9.7 GPa), 带隙的变大主要是由于原子间距离的减小造成的共价性增强和Ge原子随压强的变大局域性增强引起的; 在高压区域(P>9.7 GPa), 则是出现了离域现象, 诱发了离域电子的产生, 从而使带隙减小.  相似文献   

3.
Na_2Ge_2Se_5是一种优异的红外非线性晶体材料.采用基于第一性原理的密度泛函理论赝势平面波方法对Na_2Ge_2Se_5进行结构优化,并以此为基础计算研究了Na_2Ge_2Se_5的电子结构和光学性质.结果表明:Na2Ge2Se5是宽禁带间接带隙半导体,价带至导带的电子跃迁主要来自于Ge和Se的48,4p态;Na对光学性质的贡献较小,Ge和Se之间的相互耦合作用决定了Na_2Ge_2Se_5的光学性质;该晶体在紫外区有强烈的反射和吸收,静态折射率为2.133,双折射率值适中,为0.145.理论计算结果表明,Na_2Ge_2Se_5是一种性能优良的红外非线性光学晶体材料.  相似文献   

4.
溅射气压对Ge2Sb2Te5薄膜光学常数的影响   总被引:1,自引:0,他引:1  
实验研究了氩气气压对溅射制备的Ge2 Sb2 Te5 薄膜的光学常数随波长变化的影响 ,结果表明 :随薄膜制备时氩气气压的增加 ,Ge2 Sb2 Te5 薄膜的折射率n先增大后减小 ,而消光系数k先减小后增大。二者都随波长的变化而变化 ,且在长波长范围变化较大 ,短波长范围变化较小 ,解释了溅射气压对Ge2 Sb2 Te5 薄膜的光学常数影响的机理  相似文献   

5.
胡永金  吴云沛  刘国营  罗时军  何开华 《物理学报》2015,64(22):227802-227802
运用密度泛函理论体系下的投影缀加波方法, 对闪锌矿和朱砂相结构的ZnTe在高压下的状态方程和结构相变进行了研究, 并分析了相变前后的原胞体积、电子结构和光学性质. 结果表明: 闪锌矿结构转变为朱砂相结构的相变压力为8.6 GPa, 并没有出现类似材料高压导致的金属化现象, 而是表现出间接带隙半导体特性. 相变后, 朱砂相结构Zn和Te原子态密度分布均向低能级方向移动, 带隙变小; 轨道杂化增强, 更有利于Te 5p与Zn 3d间的电子跃迁, 介电常数虚部主峰明显增强, 但宏观介电常数不受压力的影响.  相似文献   

6.
利用基于密度泛函理论的第一性原理超软赝势平面方法研究了外界压强对LiNbO_3晶体态密度,能带结构,电荷密度以及光学性质的影响.能带结构计算表明,价带顶主要由O-2p和Nb-4d态电子贡献,导带底主要由Nb-4d态电子贡献,且带隙随着压强的增加而线性增大.利用复介电函数计算了LiNbO_3晶体在不同压强下光学性质的折射率、反射率、吸收函数,能量损失函数以及光电导率.研究发现:外界压强大于10GPa时,静态折射率保持不变,随外界压强的增加,反射率、吸收函数以及光电导率区间有一定程度的拓宽,损失函数峰发生"蓝移".研究表明,外界高压可以有效调控LiNbO_3晶体的电子结构和光学性质,为LiNbO_3晶体的高压应用提供了有益的理论依据.  相似文献   

7.
本文利用密度泛函理论中的广义梯度近似对碳化钨晶体的三种结构(碳化钨相、闪锌矿相以及纤锌矿相)进行了优化,得到能量最低的稳定构型,并在此基础上计算了它的力学、电子、光学和高温高压下的热力学性质.研究表明:在0~300 GPa压力范围内,碳化钨相具有最高的稳定性.同时,高压下碳化钨相的弹性常数满足Born-Huang准则,且0 GPa和300 GPa下的声子色散没有虚频,证明了高压下碳化钨相的静力学稳定性和动力学稳定性.电子性质表明了碳化钨的金属性.光学性质表明碳化钨在高能区很难吸收光.热力学性质的研究表明:体积比V/V_0对压强的变化更敏感;高温时C_V曲线近似一条直线;给定压强下热膨胀系数α在600 K温度以上增长非常缓慢;压强对德拜温度Θ_D的影响较大;在低压下格林艾森系数γ的变化较大.  相似文献   

8.
应用第一性原理平面波赝势计算方法,研究了闪锌矿ZnTe晶体在外界压力下的电子结构和光电性质,并计算了介电函数和光学吸收系数随压力的变化情况。结果表明:在高压作用下,Te原子和Zn原子的态密度分布都向低能量方向移动,分布范围增大,Te 5p和Zn3d电子轨道杂化变强。随着压力的增大,直接带隙逐渐增大,而间接带隙逐渐变小。当压力为10.7GPa时,能带结构从直接带隙转变为间接带隙结构。压力增大,有利于Te 5p与Zn3d电子间的跃迁,光吸收系数增大,产生更多的电子-空穴对,材料导电能力增强。  相似文献   

9.
采用平面波赝势密度泛函理论对0—100 GPa静水压下P1-IrB(空间群Pnma)和P5-IrB2(空间群Pmmn)结构的平衡态晶格常数、弹性常数等性质进行了研究.研究结果表明,P1-IrB不可压缩性随着压强的增加而增强;P5-IrB2结构在0—100 GPa范围内弹性常数、体弹模量、剪切模量均呈现出有规律的变化,当所加压强为50 GPa时,杨氏模量和在b方向的晶格常数发生异常变化.对零压下P1-IrB和P5-IrB2的电子结构的研究发现,二者均没有一个明显的带隙,主要原因为Ir原子和B原子间的共价作用.从P1-IrB和P5-IrB2的能带结构和态密度图可以发现这两种结构均有金属性.  相似文献   

10.
采用基于密度泛函理论的第一原理方法研究了层状MoS2在压力下的热动力学性质和相变机制.计算表明MoS2的2Hc结构在17.5GPa会相变到2 Ha结构,与此前理论结果20GPa基本一致.对比分析了两个结构在压力下的弹性常数、体模量、波速、德拜温度、线性体模量、热膨胀系数和定容热容等热动力学性质.研究表明MoS2的2 Hc和2 Ha结构在0~60GPa都满足力学稳定性条件,说明相变不是由于力学稳定性丧失导致,并且两个高压相在压力下呈现出较强的弹性各向异性,在0~50GPa内其a轴抗压缩均能力强于c轴.在相变机制上,Mulliken布居分析表明,随着压力增加,S原子向Mo原子转移电子以及Mo原子内s电子向d电子转移对MoS2从2 Hc结构相变到2 Ha结构起到重要作用.  相似文献   

11.
Neutron diffraction study of polycrystalline HoRu2Si2, HoRh2Si2, TbRh2Si2, and TbIr2Si2 was performed in the temperature range between 4.2 and 300 K. For HoRu2Si2 the magnetic spin alignment of a linear transverse wave mode below the Néel temperature 19 K is observed. This static moment wave is propagating along the b-axis with k=(0, 0.2, 0) and is polarized in the c-axis. The root-mean-square and maximum saturation moments per Ho atom are 9.26 and 13.09μB, respectively. HoRh2Si2, TbRh2Si2 an TbIr2Si2 are simple collinear antiferromagnets of +-+- type with Néel temperatures of (27±1), (98±2) and (72±3) K, respectively. For TbRh2Si2 and TbIr2Si2 magnetic moments are localized on RE ions only and are aligned along the tetragonal axis, while for HoRh2Si2 they form an angle ø = (28±3)°.  相似文献   

12.
Muon spin relaxation experiments have been carried out in the paramagnetic and magnetically ordered states of URh2Si2 and CeRh2Si2. As the magnetic structure of these compounds is well known, these measurements can help to characterise their magnetic properties probed by μSR and to understand the μSR results of the heavy fermion compounds of the same crystallographic family. Our measurements show that the muons occupy two different crystallographic sites. The spectra of URh2Si2 and CeRh2Si2 in the magnetically ordered states are very different, probably reflecting their different magnetic structures. The spectra obtained on CeRh2Si2 are similar to the published spectra of the heavy fermion compound CeCu2.1 Si2. Muon spin rotation measurements on LaNi2As2 indicate that the muon is diffusing at 150 K.  相似文献   

13.
The CO2 TEA laser irradiation of CBr2F2 in the presence of Cl2 yielded 13C-enriched CBrClF2 and 13C-enriched CCl2F2 under selected experimental conditions. As the photolysis proceeded, the 13C concentration of CBrClF2 decreased gradually and that of CCl2F2 increased up to 90% or higher. These results can be explained by the mechanism involving the secondary 13C-selective IRMPD of the primary product CBrClF2. On the other hand, the carbon-containing product for a CCl2F2/Br2 system was only CBrClF2; the further IRMPD of which probably regenerated CBrClF2 in the presence of Br2. The decomposition probabilities of 12C- and 13C-containing molecules in both systems were measured as functions of laser line, laser fluence, and reactant pressures.  相似文献   

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16.
Far infrared (30–430 cm?1) reflectivity measurements of Hg2Cl2 and Hg2Br2 single crystals have been performed in polarized light. The spectra, which are in agreement with group-theoretical predictions, were analyzed by the oscillator fitting procedure and Kramers-Kronig method. The results are compared with the existing data from other measurements and the large anisotropy of polar modes is briefly discussed. The polarization vectors of all long-wavelength symmetry modes were determined group-theoretically.  相似文献   

17.
Longitudinal and transverse magnetostrictions of polycrystalline samples of intermetallic compounds RMn2Ge2 (R=Sm or Gd) are measured in pulsed magnetic fields up to 250 kOe. It is found that linear magnetostrictive strains of about 10?3 arise in a temperature range in which the magnetic field causes a change in the magnetic state of a manganese magnetic subsystem. The results obtained are described within the model of a two-sublattice ferrimagnet with a negative exchange interaction in the manganese subsystem in terms of a strong dependence of this interaction on interatomic distances.  相似文献   

18.
正Since the discovery of superconductivity in LaFeAsO_(1-x)F_x,the high-T_c iron-based superconductors have been extensively studied from both experimental and theoretical viewpoints [1-8]. However, the mechanism of the unconventional superconductivity is still to be resolved. To  相似文献   

19.
Both pseudobinary systems exhibit large homogeneous regions of cubic and hexagonal Laves phases. Ordering tendencies on crystallographic sites between Al and the transition metals are observed in the hexagonal type.Electron transfer to the transition metals quenches their moments so that they become nonmagnetic at high Al concentrations. The peculiarities in the mechanism of magnetization which appear in rare earth dialuminides when Al is replaced by a transition metal have been studied in detail at cryogenic temperatures.The first replacement of Al results in a decrease in saturation moment. Neutron diffraction verifies the low ordered rare earth sublattice moments and reveals the ‘lost part’ as a disordered component. Considerable magnetic hardness develops in certain regions of concentration often connected with spontaneous increases in magnetization with field. All available evidence suggests the presence of unusual domain wall effects to be responsible for this effect. High remanences develop in both the hexagonal and in the cubic structures in the intermediate region. The development of disordered magnetic components is connected either with the disorder on crystallographic sites or changes in the free electron concentration.  相似文献   

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