First-principles calculation of structural and electronic properties of pyrochlore Lu2Sn2O7

A Density functional theory method within generalized gradient approximation has been performed to obtain the static lattice parameters, oxygen positional parameter, bond length and bond angle and electronic properties of ideal Lu₂Sn₂O₇ pyrochlore. The results are in excellent agreement with available experimental measurements. Density of states (DOS) of this compound was presented and analysed. We also notice the presence of the hybridization between oxygen and Lu metal. The band structure calculations show that the compound has direct band gap of 2.67 eV at the Γ point in the Brillouin zone and this indicates that the material has a semi-conducting feature.     

IrB和IrB$lt;sub$gt;2$lt;/sub$gt;力学性质的第一性原理计算

采用平面波赝势密度泛函理论对0–100 GPa静水压下P₁ -IrB（空间群Pnma）和P₅ -IrB₂（空间群Pmmn）结构的平衡态晶格常数、弹性常数等性质进行了研究. 研究结果表明,P₁ -IrB不可压缩性随着压强的增加而增强;P₅ -IrB₂ 结构在0–100 GPa范围内弹性常数、体弹模量、剪切模量均呈现出有规律的变化,当所加压强为50 GPa时,杨氏模量和在b方向的晶格常数发生异常变化. 对零压下P₁ -IrB和P₅ -IrB₂ 的电子结构的研究发现,二者均没有一个明显的带隙,主要原因为Ir原子和B原子间的共价作用. 从P₁ -IrB和P₅ -IrB₂的能带结构和态密度图可以发现这两种结构均有金属性. 关键词： 1 -IrB')" href="#">P₁ -IrB 5-IrB₂')" href="#">P₅-IrB₂ 第一性原理 力学性质     

First-principles study of disordering tendencies in Gd2B2O7（B=Ti,Sn,Zr） compounds

This paper performs the density functional theory calculations to obtain some factors influencing the response of pyrochlores Gd2B2O7(B = Ti,Sn,Zr) to ion irradiation-induced amorphization.The 48f oxygen position parameter x,cohesive energy,bond type and defect-formation energy are discussed.The results show that parameter x can be used to indicate the disordering tendencies within a given pyrochlore family.Bond type,cohesive energy and defect-formation energies can be used to explain some experimental observations,but they are not determined exclusively by radiation "resistance" for a different pyrochlore family.     

高压下MgS的弹性性质、电子结构和光学性质的第一性原理研究

采用基于密度泛函理论(density functional theory)基础上的第一性原理赝势平面波方法, 计算研究了MgS晶体B2构型在不同压强下的几何结构、弹性性质、电子结构和光学性质. 计算结果表明, 在高压作用下, 该结构的导带能级有向高能级移动的趋势, 而价带能级有向低能级移动的趋势. 同时, 对照态密度分布图及高压下能级的移动情况, 分析了MgS B2构型在高压作用下的光学性质, 发现高压作用下, 吸收光谱发生了明显的蓝移.     

IrB和IrB_2力学性质的第一性原理计算

采用平面波赝势密度泛函理论对0—100 GPa静水压下P1-IrB(空间群Pnma)和P5-IrB2(空间群Pmmn)结构的平衡态晶格常数、弹性常数等性质进行了研究.研究结果表明,P1-IrB不可压缩性随着压强的增加而增强;P5-IrB2结构在0—100 GPa范围内弹性常数、体弹模量、剪切模量均呈现出有规律的变化,当所加压强为50 GPa时,杨氏模量和在b方向的晶格常数发生异常变化.对零压下P1-IrB和P5-IrB2的电子结构的研究发现,二者均没有一个明显的带隙,主要原因为Ir原子和B原子间的共价作用.从P1-IrB和P5-IrB2的能带结构和态密度图可以发现这两种结构均有金属性.     

Electronic and optical properties of pure and Ce3+-doped CaS single crystals: a first-principles prediction

This paper investigates the electronic and optical properties for pure and Ce 3+-doped CaS crystals by using the first-principles total energy calculations.The results show that CaS:Ce has a direct band gap of 2.16 eV,and the top of the valence band is determined by S 3p states and the bottom of the conduction band is determined by Ce 4f states,respectively.Our results validate that the yellow emission from CaS:Ce is produced by doped cerium and the green emission quenches at 12.5% cerium concentration.The Ce-S bond shows more covalent character than the Ca-S bond.     

MgS晶体结构性质的密度泛函研究

采用基于密度泛函理论(DFT)基础上的第一性原理赝势平面波方法对MgS晶体四种构型(B1，B2，B3，B4)的体相性质进行了系统研究.计算结果表明，B1构型的晶体是间接带隙型半导体，而B2，B3和B4构型的晶体则是直接带隙型材料，其中B2构型的带隙宽度最窄，其值为0.42eV.在压力不超过200.3GPa时，B1构型的MgS 晶胞是最稳定的，当压力大于该值时，会发生B1构型到B2构型的转化. 关键词： MgS 第一性原理赝势平面波方法 电子结构 转化压力