Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer

A 10-nm-thick molybdenum tri-oxide(MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices(OLEDs).The tandem OLEDs with two identical emissive units consisting of N,N-bis(naphthalen-1-yl)N,N-bis(phenyl)-benzidine(NPB) /tris(8-hydroxyquinoline) aluminum(Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device(1.8cd/A).The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.     

Field- and thickness-dependent performance of tandem organic light-emitting diodes with buffer-modified fullerene/copper phthalocyanine heterojunction as interconnector

Tandem organic light-emitting diodes (OLEDs) with the buffer-modified fullerene/copper phthalocyanine (LiF/C60/CuPc/MoO₃) as interconnector have been investigated. The properties of tandem OLEDs are dependent on electric field, which is induced by electric-field-dependence of charge generation (by electric filed and photons) and separation in such an interconnector structure. At low electric field, because of less generated-charges and light-absorption of C60/CuPc film, current efficiency and brightness of tandem OLEDs with two emissive units exhibit less than twice higher than those of conventional single-unit device. But more than twofold enhancement of current efficiency and brightness is observed at higher electric field due to a large number of charges generated in the interconnector. Meanwhile, the performance of tandem devices is affected by the thickness of C60 and CuPc. The optimal thickness is related to their exciton diffusion length.     

Highly efficient bipolar connecting layers for tandem organic light-emitting devices

A highly efficient tandem organic light-emitting device (OLED) has been fabricated by using an effective bipolar connecting layer structure. The connecting layers were made up of a layer of magnesium (Mg): 2,7-dipyrenyl-9,9-diphenyl fluorene (N-DPF) and a layer of tungsten trioxide (WO₃). Such a connecting layer structure permits efficient opposite holes and electrons flowing into two adjacent emitting units. The current efficiency of the two-unit tandem device can be dramatically enhanced by more than four times compared with that of the conventional single-unit device. At 60 mA/cm², the current efficiency of the tandem OLED using the connecting layers of Mg: N-DPF/WO₃ was about 8.15 cd/A. The results can be marked as a breakthrough approach to improve the current efficiency and brightness of OLEDs. Furthermore, a model of the carrier tunneling into light-emitting units is proposed based on carrier balance and field-assisted tunneling. It indicates that the connecting layer structure functions as the origin of high efficiency for the tandem OLEDs.     

基于新型电荷生成层的P-i-N结构白色有机叠层电致发光器件

采用2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP): 5 wt.% cesium carbonate(Cs₂CO₃)和N, N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine(NPB): 20 wt.% molybdenum oxide(MoO₃)分别作为器件的电子注入层和空穴注入层,研究了N型和P-i-N结构有机电致发光器件的载流子传输特性.载流子传输层中BCP: Cs₂CO₃和NPB:MoO₃的引入有效增强了载流子注入能力,从而降低了器件的驱动电压.基于新型电荷生成层BCP: 5 wt.% Cs₂CO₃/ NPB: 20 wt.% MoO₃制备了色稳定、高效率P-i-N结构有机叠层器件.与单元器件相比,引入新电荷生成层有机叠层器件的最大电流效率增大了2.5倍,表明该电荷生成层可以有效地将电子和空穴分别注入到相邻发光单元中.采用该电荷生成层制备了P-i-N结构白色有机叠层器件,器件的上下发光单元分别为橙光和蓝光发射.当发光亮度从500增加到5 000 cd/m²时,器件的色坐标稳定在(0.33, 0.29)附近,接近白光等能点.利用单色发光单元堆叠制备白色有机叠层器件的方法为实现色稳定、高效率的白色有机电致发光器件提供了一种有效的途径.     

Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'-biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq₃) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm², which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.     

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO₃-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO₃: PTCDA/NPB/Alq₃/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m², which is 1.3 times more stable than that of the device with MoO₃ as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m² have been obtained. The charge transfer complex between PTCDA and MoO₃ plays a decisive role in improving the performance of OLEDs.     

Co50Fe50-xSix合金的结构相变和磁性

利用实验测量和理论计算相结合的方法,研究了介于B2结构CoFe低有序合金和L2₁结构Co₂FeSi高有序合金之间的Co₅₀Fe_50-xSi_x合金的结构相变、磁相变、分子磁矩和居里温度.采用考虑Coulomb相互作用的广义梯度近似(GGA+U)方法计算了合金的能带结构.研究发现,合金出现较强的原子有序倾向,表现出较强的共价成相作用.合金的晶格常数、磁矩、居里温度随Si含量的增加而线性地降低,极限成分Co₂FeSi合金的分子磁矩和居里温度分别达到5.92μ_B和777 ℃.原子尺寸效应导致合金晶格发生变化,但并未成为居里温度和分子磁矩变化的主导因素.分子磁矩的变化符合Slater-Pauling原理,但发现原子磁矩的变化并非线性,据此提出了共价成相对磁性影响的观点.采用Stearns理论解释了居里温度的变化趋势,排除了原子间距对居里温度的主导影响作用.能带计算的结果还表明,Co₂FeSi作为半金属材料并非十分完美,可能在实际应用中会出现自旋极化率降低的问题.发现该系列合金的结构相变和磁相变随着成分的变化聚集在窄小的成分和温度范围内. 关键词： 磁性 Heusler合金 结构相变     

Tandem organic light-emitting diodes with an effective charge-generation connection structure

The tandem organic light-emitting diodes (OLEDs) with an effective charge-generation connection structure of Mg-doped tris(8-hydroxyquinoline) aluminum (Alq₃)/Molybdenum oxide (MoO₃)-doped 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) were presented. At a current density of 50 mA/cm², the current efficiency of the tandem OLED with two standard NPB/Alq₃ emitting units is 4.2 cd/A, which is 1.7 times greater than that of the single EL device. The tandem OLED with the similar connection structure of Mg-doped PTCDA/ MoO₃-doped PTCDA was also fabricated and the influences of the different connection units on the current efficiency of the tandem OLED were discussed as well.     

基于迭层结构的高效红色有机电致发光器件

为了提高红色有机电致发光器件的亮度和效率,引入Alq3:Mg/WO3作连接层制备了红色迭层有机电致发光器件.通过调节WO3的厚度得到了最佳器件,其效率和亮度达到了普通器件的三倍和四倍.利用铕配合物[Eu(DBM)3bath]和小分子染料器件(DCJTI)单元进行组合制备迭层器件,结构为ITO/TPD/DCJTI:CBP/BCP/Alq3/Alq3:Mg/WO3/TPD/Eu(DBM)3bath:TPD/Eu(DBM)3bath/LiF/A1,器件的最大亮度达8609 cd/m'2,最大效率达10.2 cd/A.     

利用p型掺杂技术制备的高效有机电致发光器件

利用氧化钼(MoO_x)作为p型掺杂剂,以掺杂层4,4'-bis(carbazol-9-yl)biphenyl(CBP):MoO_x作为空穴注入层,制备了一种结构为ITO/MoO_x/CBP:MoO_x/CBP/CBP:tris(2-phenylpyridine)iridium(III)(Ir(ppy)₃)/4,7-diphenyl-1,10-phenanthroline(Bphen)/LiF/Al的有机电致发光器件.器件中CBP同时作为空穴注入层、空穴传输层以及发光层母体材料,这种结构具有结构简单同时能有效降低空穴注入势垒等优点.研究发现,随着空穴注入层厚度的增加,器件的电流密度增加,表明p型掺杂层的引入能够有效增强空穴的注入;通过优化器件空穴注入层与空穴传输层厚度,器件性能有所提高,最大电流效率为29.8 cd/A,可以认为合理的优化空穴注入层和空穴传输层的厚度,使载流子在发光层中的分布更加平衡是提高器件发光效率的主要原因.值得指出的是,从电流效率最大值到亮度为 20 000 cd/m²时,优化后器件的效率衰减仅为17.7%,而常规器件的效率衰减则为62.1%,优化后器件效率衰减现象得到了明显的改善.分析认为优化后的器件中未掺杂的CBP有助于展宽激子形成区宽度,进而减弱了三线态-三线态湮灭、三线态-极化子淬灭现象,激子形成区的展宽是改善效率衰减的主要原因.     

Improved performances of the organic light-emitting devices by doping in the mixed layer

The brightness, efficiency and lifetime of organic light-emitting diodes (OLEDs) were remarkably improved by doping in a mixed layer. In this device, the emitting layer consists of a mixture of -naphthylphenybiphenyl amine (NPB), tris (8-hydroxyquinolinolate) aluminum (Alq₃) (referred to as the mixed layer) and an emissive dopant 5,6,11,12-petraphenylnaphthacene (rubrene), where the concentration of NPB declined while the concentration of Alq₃ was increased gradually in the deposition process. The device exhibited a maximum emission of 49,300 cd/m² at a destroy voltage of 35 V and a maximum efficiency of 7.96 cd/A at 10 V, respectively. The efficiency improves twofold in comparison with the conventional doped devices. Meanwhile, the device exhibited superior operational stability with a half-life time of 1000 h at a starting luminance of 1000 cd/m² by a constant current driver.     

Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.     

高效率的有机电致发光器件

有机电致发光器件 (OL EDs)的发光机理包括电子和空穴从电极的注入、激子的形成及复合发光 ,其中 ,空穴和电子的注入平衡是非常重要的。为了平衡载流子的注入以得到高效率和稳定性好的器件 ,人们不仅使用了电子注入更为有效的 L i F/ Al[1] 和 Cs F/ Al[2 ] 等复合电极 ,同时也使用了空穴缓冲层 ,如 S.A.Van Slyke等 [3]在ITO和 NPB之间使用 Cu Pc,使得器件的稳定性得到了明显的提高 ;A.Gyoutoku等[4 ] 用碳膜使器件的半寿命超过 3 5 0 0小时 ;最近 ,Y.Kurosaka等 [5]和 Z.B.Deng[6 ]分别在 ITO和空穴传输层之间插入一薄层 Al…     

Improvement of performance of tetraphenylporphyrin-based red organic light emitting diodes using WO3 and C60 buffer layers

One of the porphyrin derivatives, meso-tetraphenylporphyrin (TPP), has been synthesized and examined as an emitter material (EM) for efficient fluorescent red organic light-emitting diodes (OLEDs). By inserting a tungsten oxide (WO₃) layer into the interface of anode (ITO) and hole transport layer N,N′-Di-[(1-napthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (NPB) and by using fullerene (C₆₀) in contact with a LiF/Al cathode, the performance of devices was markedly improved. The current density–voltage–luminance (J–V–L) characterizations of the samples show that red OLEDs with both WO₃ and C₆₀ as buffer layers have a lower driving voltage and higher luminance compared with the devices without buffer layers. The red OLED with the configuration ITO/WO₃ (3 nm)/NPB (50 nm)/TPP (60 nm)/BPhen (30 nm)/C₆₀ (5 nm)/LiF (0.8 nm)/Al (100 nm) achieved the high luminance of 6359 cd/m² at the low driving voltage of 8 V. At a current density of 20 mA/cm², a pure red emission with CIE coordinates of (0.65; 0.35) is observed for this device. Moreover, a power efficiency of 2.07 lm/W and a current efficiency of 5.17 cd/A at 20 mA/cm² were obtained for the fabricated devices. The study of the energy level diagram of the devices revealed that the improvement in performance of the devices with buffer layers could be attributed to lowering of carrier-injecting barrier and more balanced charge injection and transport properties.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

有机异质结连接层C60/CuPc电荷产生能力研究

有机异质结连接层因其具有良好的透光性能、制备工艺和有机电致发光器件(Organic light-emitting diodes,OLEDs)完全兼容的优点,被广泛应用于叠层OLEDs中。在叠层OLEDs中,连接层可产生电荷,其工作性能是影响叠层OLEDs性能的关键因素之一。为了获得最佳性能的有机异质结连接层,本文制备了结构为glass/ITO/tris(8-hydroxyquinoline) aluminum(Alq_3)(60 nm)/C_(60)(x nm)/CuPc(y nm)/N,N′-bis(naphthalen-1-yl)-N,N′-bis (phenyl)-be-nzidine(NPB)(40 nm)/Al (100 nm)的有机器件,直接获得了有机异质结连接层C_(60)/CuPc产生的器件电流。通过结构优化发现,结构为C_(60)(30 nm)/CuPc(10 nm)的连接层具有最强的电荷产生能力,并对最优结构连接层形成的物理机制作了合理的解释.本文获得的结果可为理解有机异质结连接层工作机理以及制备高性能叠层OLEDs提供理论基础。     

Color tunable high efficiency microcavity organic light-emitting diodes

Color tunable microcavity organic light-emitting diodes (OLEDs) with structure of distributed Bragg reflectors (DBR)/indium-tin-oxide (ITO)/N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq₃)/LiF/Al were fabricated. Orange red and green light emissions with full width at half maximum (FWHM) of less than 20 nm were obtained through simply changing the thickness of NPB layer. Furthermore, due to the effective modification of the spontaneous emission within microcavity, the brightness and electroluminescent (EL) efficiency of the microcavity OLEDs were significantly enhanced. The maximum brightness and current efficiency, respectively, reached 31000 cd/m² at a current density of 480.0 mA/cm² and 8.3 cd/A at a current density of 110.0 mA/cm² for green devices, and 9700 cd/m² at a current density of 180.0 mA/cm² and 6.6 cd/A at a current density of 36.4 mA/cm² for red devices, which are over 1.5 times higher than those of noncavity OLEDs.      

Solidly mounted resonators consisting of a molybdenum and titanium Bragg reflector

Bright and efficient stacked color-tunable organic light emitting devices (OLEDs) using an intermediate Al/Au electrode have been reported. The effects of the thicknesses of Al and Au layers on the luminance characteristics have been comprehensively studied. After optimization, the bottom-emission single-unit OLED of 4,4^′,4^′′-Tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine/N,N^′-diphenyl-N,N^′-bis(1-naphthyl)-(1,1^′-biphenyl)-4,4^′-diamine/tris(8-hydroxyquinoline) aluminum has a maximum luminance efficiency (η_L) of 3.37 cd/A by using Al/Au as the cathode and 2.92 cd/A by using Al/Au as the anode. Meanwhile, by introducing the optimized intermediate Al/Au electrode into the stacked color-tunable (red to blue) OLEDs, a red unit with maximum η_L of 4.73 cd/A and a blue unit with maximum η_L of 3.96 cd/A have been obtained. The color can be tuned efficiently along a linear route from pure red with the Commission Internationale de l’Eclairage (CIE) coordinates of (0.662, 0.330) to sky blue with the CIE coordinates of (0.155, 0.340). This scheme can be a potential candidate for achieving high-brightness and efficient stacked color-tunable OLEDs. PACS 78.60.Fi; 78.66.Qn; 81.05.Lg; 85.30.De     

ITO‐free top emitting organic light emitting diodes with enhanced light out‐coupling

Bottom emitting organic light emitting diodes (OLEDs) can suffer from lower external quantum efficiencies (EQE) due to inefficient out‐coupling of the generated light. Herein, it is demonstrated that the current efficiency and EQE of red, yellow, and blue fluorescent single layer polymer OLEDs is significantly enhanced when a MoO_x(5 nm)/Ag(10 nm)/MoO_x(40 nm) stack is used as the transparent anode in a top emitting OLED structure. A maximum current efficiency and EQE of 21.2 cd/A and 6.7%, respectively, was achieved for a yellow OLED, while a blue OLED achieved a maximum of 16.5 cd/A and 10.1%, respectively. The increase in light out‐coupling from the top‐emitting OLEDs led to increase in efficiency by a factor of up to 2.2 relative to the optimised bottom emitting devices, which is the best out‐coupling reported using solution processed polymers in a simple architecture and a significant step forward for their use in large area lighting and displays.     

4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺掺杂MoOx作为空穴传输层对有机太阳电池性能的影响

通过采用4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺 (m-MTDATA)掺入MoO_x作为器件的空穴传输层来提高酞菁铜(CuPc)/C₆₀小分子 有机太阳电池的效率. 采用真空蒸镀的方法制备了一系列器件, 其中结构为铟锡氧化物 (ITO)/m-MTDATA:MoO_x(3:1)(30 nm)/CuPc(20 nm)/C₆₀(40 nm)/4,7-二苯 基-1,10-菲罗啉 (Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件, 在AM1.5 (100 mW/cm²)模拟太阳光的照射条件下, 开路电压V_oc=0.40 V, 短路电流J_sc=6.59 mA/cm², 填充因子为0.55, 光电转换效率达1.46%, 比没有空穴传输层的器件ITO/CuPc(20 nm)/C₆₀(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm) 光电转换效率提高了38%. 研究表明, 加入m-MTDATA:MoO_x(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻, 从而减小了整个器件的串联电阻, 提高了器件的光电转换效率.