Investigation of the quantum dot infrared photodetectors dark current

Quantum dot infrared photodetectors (QDIPs) are more efficient than other types of semiconductor based photodetectors; so it has become an actively developed field of research. In this paper quantum dot infrared photodetector dark current is evaluated theoretically. This evaluation is based on the model that was developed by Ryzhii et al. Here it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of QDIPs; moreover we have considered Richardson effect, which has not been taken into account in previous research. Then a new formula for estimating average number of electrons in a quantum dot infrared photodetector is derived. Considering the Richardson effect and field-assisted tunneling mechanisms in the dark current improves the accuracy of algorithm and causes the theoretical data to fit better in the experiment. The QDIPs dark current temperature and biasing voltage dependency, contribution of thermionic emission and field-assisted tunneling at various temperatures and biasing voltage in the QDIPs dark current are investigated. Moreover, the other parameter effects like quantum dot (QD) density and QD size effect on the QDIPs dark current are investigated.     

Single-shot detection of electrons generated by individual photons in a tunable lateral quantum dot

We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.     

Tunneling current of the Coulomb-coupled quantum dots embedded in n-n junction

Taking account of the electron--electron (hole) and electron--hole interactions, the tunneling processes of the main quantum dot (QD) Coulomb-coupled with a second quantum dot embedded in n--n junction have been investigated. The eighteen resonance mechanisms involved in the tunneling processes of the system have been identified. It is found that the tunneling current depends sensitively on the electron occupation number in the second quantum dot. When the electron occupation number in the second dot is tiny, both the tunneling current peaks and the occupation number plateaus in the main QD are determined by the intra-resonance mechanism. The increase of the electron occupation number in the second dot makes the inter-resonance mechanism participate in the transport processes. The competition between the inter and intra resonance mechanisms persists until the electron occupation number in the second dot reaches around unity, leading to the consequence that the inter-resonance mechanisms completely dominate the tunneling processes.     

Charge and current beats in T-shaped qubit–detector systems

The time evolution of a charge qubit coupled electrostatically with different detectors in the forms of single, double and triple quantum dot linear systems in the T-shaped configuration between two reservoirs is theoretically considered. The correspondence between the qubit quantum dot oscillations and the detector current is studied for different values of the inter-dot tunneling amplitudes and the qubit–detector interaction strength. We have found that even for a qubit coupled with a single QD detector, the coherent beat patterns appear in the oscillations of the qubit charge. This effect is more evident for a qubit coupled with double or triple-QD detectors. The beats can be also observed in both the detector current and the detector quantum dot occupations. Moreover, in the presence of beats the qubit oscillations hold longer in time in comparison with the beats-free systems with monotonously decaying oscillations. The dependence of the qubit dynamics on different initial occupations of the detector sites (memory effect) is also analyzed.     

Controlled dephasing of a quantum dot in the Kondo regime

Kondo correlation in a spin polarized quantum dot (QD) results from the dynamical formation of a spin singlet between the dot's net spin and a Kondo cloud of electrons in the leads, leading to enhanced coherent transport through the QD. We demonstrate here significant dephasing of such transport by coupling the QD and its leads to potential fluctuations in a nearby "potential detector." The qualitative dephasing is similar to that of a QD in the Coulomb blockade regime in spite of the fact that the mechanism of transport is quite different. A much stronger than expected suppression of coherent transport is measured, suggesting that dephasing is induced mostly in the "Kondo cloud" of electrons within the leads and not in the QD.     

Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current–voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs.     

Frequency-selective single-photon detection using a double quantum dot

We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge-detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon.     

In-plane and perpendicular tunneling through InAs quantum dots

A Schottky diode with InAs dots in the intrinsic GaAs region was used to investigate perpendicular tunneling (in growth direction) through InAs quantum dots (QDs). At forward bias conditions electrons tunnel from the ohmic back contact into the metal Schottky gate. Peaks appear in the differential conductance when a QD level comes into resonance with the Fermi-level of the n-doped region. The observed tunneling features are attributed to electron transport through the s- and p-shell of the InAs islands. In our in-plane tunneling experiments the islands were embedded in the channel region of an n-doped GaAs/AlGaAs HEMT-structure. In order to study tunneling through single InAs islands, a quantum point contact was defined by lithography with an atomic force microscope and subsequent wet-chemical etching. In contrast to unpatterned devices sharp peaks appear in the I–V characteristic of our samples reflecting the transport of electrons through the p-shell of a single InAs QD.     

量子点操控的光子探测和圆偏振光子发射

半导体量子点是研究光子与电子态相互作用的优选固态体系,并在光子探测和发射两个方向上展现出独特的技术机遇.其中基于量子点的共振隧穿结构被认为在单光子探测方面综合性能最佳,但受到光子数识别、工作温度两个关键性能的制约.利用腔模激子态外场耦合效应,有望获得圆偏振态可控的高频单光子发射.本文介绍作者提出的量子点耦合共振隧穿（QD-cRTD）的光子探测机理,利用量子点量子阱复合电子态的隧穿放大,将QD-cRTD光子探测的工作温度由液氦提高至液氮条件,光电响应的增益达到10⁷以上,并具备双光子识别能力;同时,由量子点能级的直接吸收,原型器件获得了近红外的光子响应.在量子点光子发射机理的研究方面,作者实现了量子点激子跃迁和微腔腔模共振耦合的磁场调控,在Purcell效应的作用下增强激子自旋态的自发辐射速率,从而增强量子点中左旋或右旋圆偏振光的发射强度,圆偏度达到90%以上,形成一种光子自旋可控发射的新途径.     

Using a quantum dot as a high-frequency shot noise detector

We present the experimental realization of a quantum dot (QD) operating as a high-frequency noise detector. Current fluctuations produced in a nearby quantum point contact (QPC) ionize the QD and induce transport through excited states. The resulting transient current through the QD represents our detector signal. We investigate its dependence on the QPC transmission and voltage bias. We observe and explain a quantum threshold feature and a saturation in the detector signal. This experimental and theoretical study is relevant in understanding the backaction of a QPC used as a charge detector.     

Dynamically induced Kondo effect in double quantum dots

A new mechanism of resonance Kondo tunneling via a composite quantum dot (QD) is proposed. It is shown that, owing to the hidden dynamic spin symmetry, the Kondo effect can be induced by a finite voltage eV applied to the contacts at an even number N of electrons in a QD with zero spin in the ground state. As an example, a double QD is considered in a parallel geometry with N=2, which possesses the SO(4) type symmetry characteristic of a singlet-triplet pair. In this system, the Kondo peak of conductance appears at an eV value compensating for the exchange splitting.     

Blockade of tunneling in a suspended single-electron transistor

The tunneling of electrons that is limited by the Coulomb blockade effect in a single-electron transistor with a quantum dot based on a narrow GaAs/AlGaAs quantum wire suspended over a substrate is investigated. By means of a direct comparison experiment, the tunneling features associated with the separation of the quantum dot from the substrate are revealed. In addition to an increase in the charge energy (Coulomb gap), which reaches 170 K in temperature units, the dependence of this energy on the number of electrons in the quantum dot, which varies from zero to four, is observed. This dependence is explained by a change in the effective size of the dot due to the effect of the depleting gate voltage. Moreover, the additional blockade of tunneling that is different from the Coulomb blockade and is specific for suspended structures is observed. It is shown that this blockade is not associated with the dynamical effect of exciting local phonon modes and can be attributed to the change in the static elastic strains in the quantum wire that accompany the tunneling of an electron to/from the quantum dot.     

Heat generation properties determined by chemical potentials

We investigate the current-induced heat generation in a quantum dot (QD) coupled to four spin chemical potentials, which originate from the magnetic pumping field applied on the QD. Both resonant and non-resonant electron tunneling process is analyzed. It is found that the heat generation characteristic is mainly determined by the two spin chemical potentials lying nearest to the dot level. In particular, when the difference of this two potentials is less than two phonon energy, the heat generation exhibits quantum properties, unique behavior to nanosystems and absent in macroscopic bulks.     

The quantum control of electron states in a double quantum dot under coulomb blocking conditions

The possibility of providing for a quantum control of electron states by means of a weak electric field (constant or alternating) acting upon a system is studied in a nondissipative approximation for a system of two electrons in a double quantum dot (QD) under Coulomb blocking conditions. It is shown that the Coulomb repulsion facilitates controlled transition of the system from a symmetric (one electron in each QD) to asymmetric (both electrons in one QD) electron configuration under the action of a resonance alternating field or a slowly varying (quasi-constant) field. In the absence of Coulomb repulsion, two electrons can be localized in the same QD only under the action of a strong electric field.     

Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots

Electrical characteristics of silicon Schottky diodes containing Ge quantum dot (QD) arrays are investigated. It has been found that the potential barrier height at the metal-semiconductor contact can be controlled by introducing dense QD layers, which is a consequence of the formation of a planar electrostatic potential of charged QDs. When the applied voltage is varied, the ideality factors of Schottky barriers exhibit oscillations due to the tunneling of holes through discrete levels in quantum dots.     

MBE自组织生长多层竖直自对准InAs量子点结构的研究

利用MBE方法在(001)GaAs衬底上生长了多层竖直自对准InAs量子点结构。透射电子显微镜的观察表明,多层量子点成一系列柱状分布。同单层量子点相比,多层量子点的光荧光谱线发生红移。这表明由于量子点中载流子波函数的扩展和交迭,柱中量子点之间有耦合现象发生。光荧光谱线半高宽随温度的反常变化说明载流子还会在邻近柱中隧穿.     

Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio.     

Spin polarization in quantum dots by radiation field with circular polarization

For circular quantum dot (QD), taking into account the Razhba spin-orbit interaction (SOI), an exact energy spectrum is obtained. For a small SOI constant, the eigenfunctions of the QD are found. It is shown that the application of a radiation field with circular polarization removes the Kramers degeneracy of the QD eigenstates. Effective spin polarization of electrons transmitted through the QD owing to a radiation field with circular polarization is demonstrated.     

Heat pump driven by the shot noise of a tunnel contact

We investigate a mechanism for cooling a lead based on a process that replaces hot electrons by cold ones. The central idea is that a double quantum dot with an inhomogeneous Zeeman splitting acts as energy filter for the transported electrons. The setup is such that hot electrons with spin up are removed, while cold electrons with spin down are added. The required non-equilibrium condition is provided by the capacitive coupling of one quantum dot to the shot noise of a strongly biased quantum point contact in the tunneling limit. Special attention is paid to the identification of an operating regime in which the net electrical current vanishes.