Tunneling current of the Coulomb-coupled quantum dots embedded in n-n junction |
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Authors: | Yan Wei-Xian Zhao Ya-Ping Wen Yu-Bing Li Xiu-Ping Xu Li-Ping and Gong Jian-Ping |
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Affiliation: | College of Physics and Electronics, Shanxi University, Taiyuan 030006, China; Department of Physics, North University of China, Taiyuan 030051, China; Department of Physics, Jinzhong University, Yuci 030600, Shanxi Province, China |
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Abstract: | Taking account of the electron--electron (hole) and
electron--hole interactions, the tunneling processes of the main
quantum dot (QD) Coulomb-coupled with a second quantum dot embedded
in n--n junction have been investigated. The eighteen resonance
mechanisms involved in the tunneling processes of the system have
been identified. It is found that the tunneling current depends
sensitively on the electron occupation number in the second quantum
dot. When the electron occupation number in the second dot is tiny,
both the tunneling current peaks and the occupation number plateaus
in the main QD are determined by the intra-resonance mechanism. The
increase of the electron occupation number in the second dot makes
the inter-resonance mechanism participate in the transport processes.
The competition between the inter and intra resonance mechanisms
persists until the electron occupation number in the second dot
reaches around unity, leading to the consequence that the
inter-resonance mechanisms completely dominate the tunneling
processes. |
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Keywords: | single-electron tunneling exciton complexes quantum dots |
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