Investigation of the quantum dot infrared photodetectors dark current

Quantum dot infrared photodetectors (QDIPs) are more efficient than other types of semiconductor based photodetectors; so it has become an actively developed field of research. In this paper quantum dot infrared photodetector dark current is evaluated theoretically. This evaluation is based on the model that was developed by Ryzhii et al. Here it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of QDIPs; moreover we have considered Richardson effect, which has not been taken into account in previous research. Then a new formula for estimating average number of electrons in a quantum dot infrared photodetector is derived. Considering the Richardson effect and field-assisted tunneling mechanisms in the dark current improves the accuracy of algorithm and causes the theoretical data to fit better in the experiment. The QDIPs dark current temperature and biasing voltage dependency, contribution of thermionic emission and field-assisted tunneling at various temperatures and biasing voltage in the QDIPs dark current are investigated. Moreover, the other parameter effects like quantum dot (QD) density and QD size effect on the QDIPs dark current are investigated.     

Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current–voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs.     

Counting statistics of single electron transport in a quantum dot

We have measured the full counting statistics of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact. This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of the distribution) in a tunable semiconductor QD is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels.     

A numerical approach for analyzing quantum dot infrared photodetectors' parameters

Quantum dot infrared photodetectors (QDIPs) have many advantages over other types of semiconductor-based photodetectors. However some of its characteristics have been investigated theoretically, there are many unstudied points. In this paper a new approach is presented to evaluate quantum dot infrared photodetectors dark current and photocurrent. In this study, it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of quantum dot detectors. Based on these assumptions, new formula for average number of electron in a quantum dot for both, dark and illumination condition is calculated, which is more accurate than the previous reported formulas; because in deriving previous reported formulas, it was assumed only thermionic emission determines dark current but field-assisted tunneling mechanisms has not been considered. Then numerical method is used to calculate the average number of electron in a quantum dot and to determine dark current and photocurrent. The theoretical results are compared with experimental data. They have good agreement with available experimental data.     

Nonadiabatic electron charge pumping in coupled semiconductor quantum dots

The possibility of nonadiabatic electron pumping in the system of three coupled quantum dots (QDs) attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle QD results in non-zero mean tunneling current appeared due to nonadiabatic non-equilibrium processes. The same principle can be used for fabrication of a new class of semiconductor electronic devices based on non-stationary non-equilibrium currents. As an example we propose a nanometer quantum emitter with non-stationary inverse level occupation achieved by electron pumping.     

Staircase in the electron mobility of a ZnO quantum dot assembly due to shell filling

Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a stepwise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunneling between the S orbitals. Transport becomes 3 times faster when the occupation number is between two and eight; tunneling now occurs between the P orbitals. Electron transport is thus critically determined by the quantum properties of the building blocks.     

Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio.     

Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes

The steady-state and time-dependent current–voltage (I–V) characteristics are experimentally investigated in Ge quantum dot (QD)/SiO₂ resonant tunneling diodes (RTDs). Ge QDs embedded in a SiO₂ matrix are naturally formed by thermal oxidation of Si_0.9Ge_0.1 nanowires (30 nm×50 nm) on silicon-on-insulator substrates. The average dot size and spacing between dots are 9±1 and 25 nm, respectively, from TEM observations, which indicate that one or two QDs are embedded between SiO₂ tunneling barriers within the nanowires. Room-temperature resonant oscillation, negative differential conductance, bistability, and fine structures are observed in the steady-state tunneling current of Ge-QD/SiO₂ RTDs under light illumination. Time-dependent tunneling current characteristics display periodic seesaw features as the Ge-QDs RTD is biased within the voltage regime of the first resonance peak while they exhibit harmonic swing behaviors as the RTD is biased at the current valleys or higher-order current peaks. This possibly originates from the interplay of the random telegraph signals from traps at the QD/SiO₂ interface as well as the electron wave interference within a small QD due to substantial quantum mechanics effects.     

Controlled dephasing of a quantum dot: from coherent to sequential tunneling

Resonant tunneling through two identical potential barriers renders them transparent, as particle trajectories interfere coherently. Here we realize resonant tunneling in a quantum dot (QD), and show that detection of electron trajectories renders the dot nearly insulating. Measurements were made in the integer quantum Hall regime, with the tunneling electrons in an inner edge channel coupled to detector electrons in a neighboring outer channel, which was partitioned. Quantitative analysis indicates that just a few detector electrons completely dephase the QD.     

Electron dynamics in the coupled double quantum dots system

We have studied the electron dynamics in different geometrical arrangements of the two coupled double quantum dot structures. Applying the equation of motion method for appropriate correlation functions the occupation probabilities of different quantum dots of the considered system has been theoretically investigated. The numerical calculations were performed for different forms of the time-dependent tunneling amplitudes and quantum dot energy levels. We found, among others, that under some conditions for the tunneling amplitudes changed in the form of Gaussian pulses it is possible to localize the electron in a controlled manner on the given dot of the considered system.     

Spin-Polarized Electron Tunneling TD:\pdf\.PDFhrough a Quantum Dot

Nonequilibrium Green's function is uscd to study spin-polarized electron tunneling through a quantum dot connected to two ferromagnetic electrodes with different orientations via two insulating barriers (FM/I/QD/I/FA.f). Intra-level Coulomb interaction in the dot is considered. General formula of tunneling current which can be used for arbitrary angle between the two electrodes' magnetizations is derived for both the weak and strong intra-dot interactions.We find that the transport current can be divided into two parts: the current with the spin-flip and the current without the spin-flip, which critically depend on the linewidth function near the Fermi level of the ferromagnetic electrodes. If a magnetic field is applied in the quantum dot, different behaviors will be found for weak and strong interactions.     

Inelastic tunneling in a double quantum dot coupled to a bosonic environment

Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy-dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well reproduced by Einstein's coefficients, which relate to the spontaneous emission rate. The inelastic tunneling rate can be comparable to the elastic tunneling rate if the boson occupation number becomes large. In the specific semiconductor double dot, the energy dependence of the inelastic rate suggests that acoustic phonons are coupled to the double dot piezoelectrically.     

Resonance breakdown of a Coulomb blockade due to the mechanical vibrations of a quantum dot

The effect of forced mechanical vibrations of a suspended single-electron transistor on Coulomb-blockade limited electron tunneling through a quantum dot has been studied. The mechanical vibrations of the quantum dot have been shown to result in the Coulomb blockade breakdown, which is manifested by narrow resonance peaks of the transistor conductance as a function of the excitation frequency at the frequencies corresponding to the eigenmodes of the mechanical vibrations. The mechanism of the observed effect presumably associated with the oscillations of the mutual electrical capacitances between the quantum dot and the surrounding electrodes is discussed.     

Towards an explanation of the mesoscopic double-slit experiment: A new model for charging of a quantum Dot

For a quantum dot (QD) in the intermediate regime between integrable and fully chaotic, the widths of single-particle levels naturally differ by orders of magnitude. In particular, the width of one strongly coupled level may be larger than the spacing between other, very narrow, levels. In this case many consecutive Coulomb blockade peaks are due to occupation of the same broad level. Between the peaks the electron jumps from this level to one of the narrow levels, and the transmission through the dot at the next resonance essentially repeats that at the previous one. This offers a natural explanation to the recently observed behavior of the transmission phase in an interferometer with a QD.     

Time-dependent transport through a quantum dot with the over-dot (bridge) additional tunneling channel

The time-dependent electron transport through a quantum dot with the additional over-dot (bridge) tunneling channel within the evolution operator technique has been studied. The microwave field applied to the leads and quantum dot has been considered and influence of the time-dependent shift of corresponding energy levels on the quantum dot charge and current flowing in the system, its time-averaged values and derivatives of the average current with respect to the gate and source–drain bias voltages have been investigated. The influence of the over-dot tunneling channel on the photon-assisted tunneling has been also studied.     

Photon-assisted mesoscopic transport through a quantum dot–carbon nanotube system perturbed by microwave fields

We have investigated the coherent mesoscopic transport through the system with a quantum dot coupled to single-wall carbon nanotubes (CN–QD–CN) interfered by microwave fields (MWFs). The investigation focuses on the tunneling behaviors induced by the double coherent MWFs and the nature of CN leads. The incoherent fields induce the tunneling current possessing symmetric resonant behaviors. The coherent fields induce the asymmetric tunneling current resulting from the interference of tunneling current branches to form asymmetric photon-assisted net current. The quantum leads possess specific density of state (DOS) structure, and the matching–mismatching behavior takes important role in the mesoscopic transport. The feature of coupled MWFs and the connected quantum wires together control the characteristics of the mesoscopic system.     

MBE自组织生长多层竖直自对准InAs量子点结构的研究

利用MBE方法在(001)GaAs衬底上生长了多层竖直自对准InAs量子点结构。透射电子显微镜的观察表明,多层量子点成一系列柱状分布。同单层量子点相比,多层量子点的光荧光谱线发生红移。这表明由于量子点中载流子波函数的扩展和交迭,柱中量子点之间有耦合现象发生。光荧光谱线半高宽随温度的反常变化说明载流子还会在邻近柱中隧穿.     

Dynamically induced Kondo effect in double quantum dots

A new mechanism of resonance Kondo tunneling via a composite quantum dot (QD) is proposed. It is shown that, owing to the hidden dynamic spin symmetry, the Kondo effect can be induced by a finite voltage eV applied to the contacts at an even number N of electrons in a QD with zero spin in the ground state. As an example, a double QD is considered in a parallel geometry with N=2, which possesses the SO(4) type symmetry characteristic of a singlet-triplet pair. In this system, the Kondo peak of conductance appears at an eV value compensating for the exchange splitting.     

Heat generation properties determined by chemical potentials

We investigate the current-induced heat generation in a quantum dot (QD) coupled to four spin chemical potentials, which originate from the magnetic pumping field applied on the QD. Both resonant and non-resonant electron tunneling process is analyzed. It is found that the heat generation characteristic is mainly determined by the two spin chemical potentials lying nearest to the dot level. In particular, when the difference of this two potentials is less than two phonon energy, the heat generation exhibits quantum properties, unique behavior to nanosystems and absent in macroscopic bulks.