多个硅通孔引起的热应力对迁移率和阻止区的影响

本文主要讨论了多个硅通孔引起的热应力对迁移率和阻止区的影响, 得到了器件沟道沿[100]方向时, 硅通孔之间的角度和间距对电子迁移率和阻止区的影响. 设定两种阻止区区域, 即迁移率变化分别为5%和10%的区域, 且主要考虑相邻TSV之间的区域. 仿真结果表明: 当硅通孔和X轴所成角度为π/4时, 电子迁移率变化和阻止区区域最小, 但是可布置器件区域不规则, 不易于布局. 随着间距的增加, 电子迁移率变化和阻止区区域逐渐增大, 趋向于单个TSV的情况; 当角度为0 时, 电子迁移率变化和阻止区区域变大, 可布置器件区域为硅通孔围成的中心小区域上, 形状比较规则, 便于布局. 而且随着间距的增加, 电子迁移率变化和阻止区区域越来越小, 趋向于单个硅通孔的情况.     

808 nm大功率半导体激光器腔面膜的制备

采用等离子体辅助电子束蒸发方法在808 nm大功率量子阱半导体激光器腔面设计镀制了HfO₂/SiO₂系前后腔面膜. 用直接测量法测量并比较了各种常用膜系的相对损伤阈值. 增透膜的反射率为12.2％,高反膜的反射率为97.9％. 对于100 μm条宽、1000 μm腔长的条形结构通过器件测量结果是出光功率提高79％、外微分量子效率提高80％、功率效率由没镀膜之前的22.2％提高到镀膜之后的39.8％.     

近红外线列探测器传递函数测试系统

器件的调制传递函数(MTF)表征了光电成像器件对空间频率的对比度传递特性,可以全面地评价其成像性能。随着器件的发展,用MTF来评价器件越来越受到重视。针对近红外InGaAs焦平面器件MTF的测试需求,搭建了一套用狭缝法测试该波段线列器件MTF的系统。系统采用全反射式Offner光学结构将狭缝高质量地成像在待测器件上。成像光学结构由两块共轴的球面反射镜构成,11成像,F数为4;在芯片工作波长为1.7 μm时,在高达8 mm×30 mm的宽视场内,20 lp/mm（对应尺寸25 μm×25 μm的芯片特征频率）处的实测MTF高于0.8,接近衍射极限。利用该系统对8元InGaAs线列探测器进行MTF测试（标称光敏元尺寸为100 μm×100 μm）,6次重复测试得到的MTF数据的标准偏差与均值之比,在截止频率10 lp/mm内小于2%,测量的相对不确定度小于4.7%。     

三维时域散斑动态干涉测量系统的集成化设计

三维电子散斑干涉技术（3D ESPI）具有非接触、高精度、高灵敏度和全场测量等优点，被广泛应用于许多领域。为了实现非接触动态全场三维测量，设计并建立了一个紧凑、完备的三维测量系统。用一个多波长光纤耦合激光器代替3个独立光源，产生的离面、面内散斑干涉图仅用一台彩色CCD相机就能捕捉和处理；整个测量系统采用笼式结构，具有高度的灵活性和稳定性；对基于小波变换的相位展开算法进行了编程，实现了被测物体三维位移信息的完整提取。实验证明该测量系统可以实时获取被测物体的三维位移，在测量实验中，获得的三维位移值17.68 μm、36.23 μm、13.85 μm，相比于实际位移值18.1 μm、36.4 μm、14.0 μm它们的绝对误差分别为0.42 μm、0.17 μm、0.15 μm，相对误差分别为2.3%、0.5%、1.1%。     

Design of multi-spectrum BRDF measurement system

A multi-spectrum bidirectional reflectance distribution function (BRDF) measurement system was developed with the adoption of single reference standard measurement method. An arm-adjustable corner device was designed for the BRDF system. Changing the distance to the sample by moving the detector arm made the device applicable to different wavelengths. The system could be used for the spectrum range from visible light (0.6328 μm) to mid-far infrared (10.6 μm), the facular size between 0.8-3 cm.The rotating limit of detector arm was ±180°, the rotation range of sample holding table was 360°, and the angle resolution was 0.036°. A silicon carbide sample was measured using this system with reflectance zenith from -55° to +55°. According to the error analysis, the measurement uncertainty of this device was about 6.42%.     

Near-contact diffusion and compensation in extrinsic photoconductors

Carrier diffusion from heavily doped contact regions has been experimentally monitored with resistivity measurements of variable thickness Si: P extrinsic photoconductors (n⁺−n−n⁺). Modeling of free carrier diffusion at the interface of heavily doped contacts and highly resistive bulk at low temperatures predicts extended regions (5–30 μm) of excess carriers in high purity materials so that, in thin device structures, free carrier diffusion profiles from each contact will overlap and determine the resistivity of the device. In this work, a decrease in resistivity of four orders of magnitude was observed in a 5 μm thick structure compared to a 10 μm thick device. The resistivity of an ohmic structure in the thin limit is strongly dependent on the bulk and near-contact compensation, and resistivity measurements can be used as a sensitive measure of compensation at interfaces or in the tail of implanted layers.     

硅基1.55 μm可调谐共振腔窄带光电探测器的研究

制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44％,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.     

固体发烟剂烟雾几种波段透过率测试

为了获得固体发烟剂烟雾对几种光学波段的衰减数据,针对发烟剂的特定成分,采用烟箱法对其产生的烟雾在可见光0.4 μm~1 μm宽波段、1.06 μm激光波段、10.6 μm激光波段和远红外8 μm~14 μm波段进行透过率测试,获取3种干扰剂烟雾对不同波段的质量消光系数,得到4种波段在不同浓度不同干扰剂下的3组透过率曲线。测试结果表明:在4.8 m烟道上、发烟弹烟雾浓度<1.094 7 g/m3的条件下,10.6 μm激光透过率较1.06 μm激光高出一倍;红外热像仪的功用远优于硅CCD相机。     

小型X箍缩的初步实验研究

基于一台紧凑型脉冲电流发生器,对小型X箍缩进行了初步的实验研究。当改变X箍缩双细丝的直径和材料时,流过负载的总电流几乎不变,这表明双细丝阻抗远小于负载的总阻抗。使用这些细丝,X箍缩均能辐射X射线,但随着细丝质量的增大,X射线辐射时刻相对于电流起始时刻的延迟逐渐增大,X射线脉冲通常为亚纳秒脉宽的单峰或几乎重叠的双峰。对于小质量的细丝负载,若驱动电流足够大,时常观察到时间间隔较长的两个X射线脉冲,并被确认为二次箍缩所致。     

栅耦合型静电泄放保护结构设计

提出了一种新型栅耦合型静电泄放(ESD)保护器件——压焊块电容栅耦合型保护管.该结构不仅解决了原有栅耦合型结构对特定ESD冲击不能及时响应的问题，而且节省了版图面积，提高了ESD失效电压.0.5 μm标准互补型金属氧化物半导体工艺流片测试结果表明，该结构人体模型ESD失效电压超过8 kV.给出了栅耦合型ESD保护结构中ESD检测结构的设计方法，能够精确计算检测结构中电容和电阻的取值. 关键词： 静电泄放 栅耦合 金属氧化物半导体场效应管 压焊块电容     

平面光波导型单纤三向器的研究

利用光束传输法,分析设计了一种只由两个定向耦合器构成、能直接与单模光纤相耦合、易于集成的平面光波导（Planar Lightwave Circuit,PLC）型1.31/1.49/1.55 μm单纤三向器.该器件的输入输出弯曲波导和耦合区平行波导均采用光束传输法进行优化设计,并对器件的折射率进行了容差分析,获得了当两个定向耦合器的耦合长度分别为6 578 μm、3953 μm时,器件对各波长的隔离度均在47 dB以上,且插入损耗小于0.05 dB.     

Thermo-optically tunable silicon photonic crystal light modulator

We designed, fabricated, and characterized a thermo-optically tunable compact (10 μm × 10 μm) silicon photonic crystal (PhC) light modulator that operates at around 1.55 μm for TE polarization. The operational principle of the device is the modulation of the cutoff frequency in a silicon-based line defect PhC. The cutoff frequency is shifted because of the thermo-optic tuning of the silicon refractive index, which is realized by localized heating on the PhC. The modulator is formed by a triangular lattice array of cylindrical air holes on a silicon-on-insulator wafer. Optical characterization was carried out, and the result clearly showed thermo-optic tuning of the cutoff frequency at around 1.55 μm.     

Study on a novel vertical enhancement-mode Ga2O3 MOSFET with FINFET structure

A novel enhanced mode(E-mode)Ga₂O₃ metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics.The metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output currents.Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant.When the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be expanded.The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage.It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga₂O₃ MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10¹⁶ cm^-3,less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.     

Broad gain,continuous-wave operation of InP-based quantum cascade laser at λ~11.8 μm

We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm average ridge wide QCL with high-reflection (HR) coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 mW at 293 K. The device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 K. Moreover, the full width at half maximum (FWHM) of the electroluminescent spectrum measured at subthreshold current is 2.37 μm, which indicates a broad gain spectrum of the materials. The tuning range of 1.38 μm is obtained by a grating-coupled external cavity (EC) Littrow configuration, which is beneficial for gas detection.     

1.30μm／1.55μm SiGe多模干涉滤波器

用多模干涉原理分析和设计了光通信波长（１．３０μｍ～１．５５μｍ）的Ｓｉ１－ｘＧｅｘ／Ｓｉ滤波器，并用模的传播分析方法对其传输特性进行了研究。结果发现，在Ｇｅ含量ｘ＝０．０４时，干涉区的脊高和宽度分别为６．３５μｍ和８μｍ。如果多模干涉区长度ＬＭ＝２３０２．５μｍ，可滤１．３０μｍ而通１．５５μｍ的波长。且具有３１ｄＢ的对比度和０．０１ｄＢ的插入损耗；如果多模干涉区长度ＬＭ＝２５１２．５μｍ，可滤１．５５μｍ而通１．３０μｍ的波长。具有１６ｄＢ的对比度和０．０９ｄＢ的插入损耗。     

Design of passive polarization rotator based on silica photonic crystal fiber

We propose and analyze a novel (to the best of our knowledge) design of a polarization rotator (PR) based on silica photonic crystal fiber. The proposed design has a rectangular core region with a slanted sidewall. The simulation results are obtained using the full vectorial finite difference method as well as the full vectorial finite difference beam propagation method. The numerical results reveal that the suggested PR can provide a nearly 100% polarization conversion ratio with a device length of 3102 μm.     

High average power 2 μm generation using an intracavity PPMgLN optical parametric oscillator

An intracavity quasi-phase-matched optical parametric oscillator (OPO) has been developed for the purpose of generating radiation with high average power and high repetition rate in the 2 μm regime. The device is a degenerate OPO based on a 3 mm thick MgO-doped periodically poled LiNbO(3) (PPMgLN) crystal, which is pumped in turn within the cavity by a diode side-pumped, Q-switched 1 μm Nd:YAG laser operating at 10 kHz. Up to 20 W broadband 2 μm radiation can be generated with a compact configuration under the crystal temperature of 115 °C. The beam profile is close to circularly symmetric with M(2) ~ 10.     

A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) with a Si_0.14Ge_0.72Sn_0.14-Ge_0.82Sn_0.18-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported. The quantum structure combined with δ-doping technology is used to reduce the scattering of the device and improve its electron mobility; at the same time, the generation of surface channels is suppressed by the Si_0.14Ge_0.72Sn_0.14 cap layer. By adjusting the threshold voltage of the device to 91 mV, setting the device aspect ratio to 1 μm/0.4 μm and adopting a novel diode connection method, the rectification efficiency of the device is improved. With simulation by Silvaco TCAD software, good performance is displayed in the transfer and output characteristics. For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ , the rectification efficiency of the device can reach 7.14% at an input power of -10 dBm, which is 4.2 times that of a Si MOSFET (with a threshold voltage of 80 mV) under the same conditions; this device shows a better rectification effect than a Si MOSFET in the range of -30 dBm to 6.9 dBm.     

高功率InGaAs量子阱垂直腔面发射激光器的研制

采用AlAs氧化物限制工艺实验制备了衬底出光的高功率大出光窗口（直径为300 μm）InGaAs/GaAs量子阱垂直腔面发射半导体激光器,实现了器件室温准连续工作（脉冲宽度为50 μs,重复频率为1000 Hz）,并对器件的伏安特性、光输出特性、发射光谱,以及器件的远场发射特性等进行了实验测试.器件阈值电流为460mA,器件的最大光输出功率为100mW,发射波长为978.6nm, 光谱半功率全宽度为1.0 nm,远场发散角小于10°,垂直方向的发散角θ_⊥为8°,水平方向的发散角θ_∥为9°,基本为圆形对称光束.     

场板结终端对金刚石SBD内部电场分布及击穿特性的影响

建立了场板结终端对金刚石肖特基势垒二极管(SBD)的数值模拟模型,采用Silvaco软件中的器件仿真工具ATLAS模拟了场板长度L、绝缘层厚度TOX、衬底掺杂浓度NB、场板结构形状对器件内部电场分布以及击穿电压的影响,并对结果进行了物理分析和解释。结果表明:当TOX=0.4μm、NB=1015cm-3、L在0~0.2μm范围内时,击穿电压随着L的增加而增加;L0.2μm后,击穿电压开始下降。当L=0.2μm、NB=1015cm-3、TOX在0.1~0.4μm范围内时,击穿电压随着TOX的增加而增加;TOX0.4μm后,击穿电压开始下降。当L=0.2μm、TOX=0.4μm、NB=1015cm-3时,器件的击穿电压达到最大的1 873 k V。与普通场板结构相比,采用台阶场板可以更加有效地提高器件的击穿电压。